DE69831075D1 - Herstellungsverfahren von integrierten Vorrichtungen, die Mikrostrukturen mit elektrischen schwebenden Zwischenverbindungen enthalten - Google Patents
Herstellungsverfahren von integrierten Vorrichtungen, die Mikrostrukturen mit elektrischen schwebenden Zwischenverbindungen enthaltenInfo
- Publication number
- DE69831075D1 DE69831075D1 DE69831075T DE69831075T DE69831075D1 DE 69831075 D1 DE69831075 D1 DE 69831075D1 DE 69831075 T DE69831075 T DE 69831075T DE 69831075 T DE69831075 T DE 69831075T DE 69831075 D1 DE69831075 D1 DE 69831075D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- devices containing
- integrated devices
- electrical floating
- containing microstructures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4821—Bridge structure with air gap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5221—Crossover interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98830629A EP0996157B1 (de) | 1998-10-21 | 1998-10-21 | Herstellungsverfahren von integrierten Vorrichtungen, die Mikrostrukturen mit elektrischen schwebenden Zwischenverbindungen enthalten |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69831075D1 true DE69831075D1 (de) | 2005-09-08 |
Family
ID=8236843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69831075T Expired - Lifetime DE69831075D1 (de) | 1998-10-21 | 1998-10-21 | Herstellungsverfahren von integrierten Vorrichtungen, die Mikrostrukturen mit elektrischen schwebenden Zwischenverbindungen enthalten |
Country Status (4)
Country | Link |
---|---|
US (1) | US6469330B1 (de) |
EP (1) | EP0996157B1 (de) |
JP (1) | JP4567126B2 (de) |
DE (1) | DE69831075D1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6809384B1 (en) * | 2002-08-09 | 2004-10-26 | Pts Corporation | Method and apparatus for protecting wiring and integrated circuit device |
US7002215B1 (en) * | 2002-09-30 | 2006-02-21 | Pts Corporation | Floating entrance guard for preventing electrical short circuits |
US7084762B2 (en) * | 2003-01-10 | 2006-08-01 | Stmicroelectronics, Inc. | Electronic device including motion sensitive power switching integrated circuit and related methods |
US6917459B2 (en) * | 2003-06-03 | 2005-07-12 | Hewlett-Packard Development Company, L.P. | MEMS device and method of forming MEMS device |
US6914709B2 (en) * | 2003-10-02 | 2005-07-05 | Hewlett-Packard Development Company, L.P. | MEMS device and method of forming MEMS device |
US6861277B1 (en) | 2003-10-02 | 2005-03-01 | Hewlett-Packard Development Company, L.P. | Method of forming MEMS device |
US6874363B1 (en) | 2003-10-31 | 2005-04-05 | Honeywell International, Inc. | Trapped charge field bias vibrating beam accelerometer |
EP1617178B1 (de) * | 2004-07-12 | 2017-04-12 | STMicroelectronics Srl | Mikroelektromechanische Struktur mit elektrisch isolierten Gebieten und Verfahren zu ihrer Herstellung |
US10273147B2 (en) | 2013-07-08 | 2019-04-30 | Motion Engine Inc. | MEMS components and method of wafer-level manufacturing thereof |
EP3019442A4 (de) | 2013-07-08 | 2017-01-25 | Motion Engine Inc. | Mems-vorrichtung und verfahren zur herstellung |
WO2015013827A1 (en) | 2013-08-02 | 2015-02-05 | Motion Engine Inc. | Mems motion sensor for sub-resonance angular rate sensing |
WO2015103688A1 (en) | 2014-01-09 | 2015-07-16 | Motion Engine Inc. | Integrated mems system |
US20170030788A1 (en) | 2014-04-10 | 2017-02-02 | Motion Engine Inc. | Mems pressure sensor |
US11674803B2 (en) | 2014-06-02 | 2023-06-13 | Motion Engine, Inc. | Multi-mass MEMS motion sensor |
WO2016090467A1 (en) | 2014-12-09 | 2016-06-16 | Motion Engine Inc. | 3d mems magnetometer and associated methods |
CA3004763A1 (en) | 2015-01-15 | 2016-07-21 | Motion Engine Inc. | 3d mems device with hermetic cavity |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1153052A (en) * | 1965-06-30 | 1969-05-21 | Texas Instr Inc 62 1153051 | Manufacture of Semiconductor Devices |
DE2001468A1 (de) * | 1970-01-14 | 1971-07-22 | Philips Nv | Verfahren zur Herstellung von Halbleiterbauelementen |
JPS63249354A (ja) * | 1987-04-06 | 1988-10-17 | Toshiba Corp | 橋絡配線方法 |
JP2856778B2 (ja) * | 1989-09-07 | 1999-02-10 | 株式会社東芝 | 半導体装置の配線構造 |
JP3367113B2 (ja) * | 1992-04-27 | 2003-01-14 | 株式会社デンソー | 加速度センサ |
US5531018A (en) * | 1993-12-20 | 1996-07-02 | General Electric Company | Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby |
JPH07202220A (ja) * | 1993-12-29 | 1995-08-04 | Zexel Corp | 半導体加速度センサ |
FR2736205B1 (fr) * | 1995-06-30 | 1997-09-19 | Motorola Semiconducteurs | Dispositif detecteur a semiconducteur et son procede de formation |
US6492705B1 (en) * | 1996-06-04 | 2002-12-10 | Intersil Corporation | Integrated circuit air bridge structures and methods of fabricating same |
EP0822578B1 (de) * | 1996-07-31 | 2003-10-08 | STMicroelectronics S.r.l. | Verfahren zur Herstellung von integrierten Halbleiteranordnungen mit chemoresistivem Gasmikrosensor |
KR100210848B1 (ko) * | 1996-08-26 | 1999-07-15 | 구본준 | 실리콘 미세 기계의 제조방법 |
EP0826967A1 (de) * | 1996-09-02 | 1998-03-04 | STMicroelectronics S.r.l. | Halbleiter-Beschleunigungsmessaufnehmer |
EP0895090B1 (de) * | 1997-07-31 | 2003-12-10 | STMicroelectronics S.r.l. | Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden |
-
1998
- 1998-10-21 DE DE69831075T patent/DE69831075D1/de not_active Expired - Lifetime
- 1998-10-21 EP EP98830629A patent/EP0996157B1/de not_active Expired - Lifetime
-
1999
- 1999-10-20 US US09/422,049 patent/US6469330B1/en not_active Expired - Lifetime
- 1999-10-21 JP JP29937499A patent/JP4567126B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0996157B1 (de) | 2005-08-03 |
US6469330B1 (en) | 2002-10-22 |
JP4567126B2 (ja) | 2010-10-20 |
JP2000133616A (ja) | 2000-05-12 |
EP0996157A1 (de) | 2000-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69831075D1 (de) | Herstellungsverfahren von integrierten Vorrichtungen, die Mikrostrukturen mit elektrischen schwebenden Zwischenverbindungen enthalten | |
DE69938767D1 (de) | Halbleiterbauelement und dessen herstellungsverfahren, bauelementsubstrat, und elektronisches bauelement | |
DE69916970D1 (de) | Innenverkleidungsteil mit nuten zur integrierten formgebung von elektrischen schaltungen | |
DE69942509D1 (de) | Gegenstand mit halbleiterchip | |
KR960012575A (ko) | 반도체 장치 제조 방법 | |
DE69923796D1 (de) | Behälteranordnung mit bodenstopfen, sowie herstellungsverfahren | |
SG74757A1 (en) | Method of manufacturing semiconductor wafer method of using and utilizing the same | |
DE69706910D1 (de) | Herstellungsverfahren einer T-förmigen Gate-Elektrode in einem Halbleiterbauelement, und die T-förmige Gate-Elektrode | |
EP1282189A4 (de) | Halbleiterschicht, diese verwendende solarzelle, herstellungsverfahren und anwendung dafür | |
DE69941200D1 (de) | Elektrolumineszente Vorrichtung und Herstellungsverfahren | |
DE69936488D1 (de) | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren | |
DE69417211D1 (de) | Planariezierungsverfahren für die Herstellung von integrierten Schaltkreisen, insbesondere für nichtflüssige Halbleiterspeicheranordnungen | |
GB2336469B (en) | Semiconductor device and manufacturing method of the same | |
GB2334621B (en) | Method of manufacturing semiconductor device | |
DE69926856D1 (de) | Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren | |
SG78391A1 (en) | Semiconductor device manufacturing method | |
DE68915885T2 (de) | Verbindungsvorrichtung zwischen einer integrierten Schaltung und einer elektrischen Schaltung und Herstellungsverfahren derselben. | |
DE69832380D1 (de) | Herstellungsmethode für die verdrahtung von halbleiteranordnungen | |
DE69803915D1 (de) | Verpackung einer elektrischen Schaltung, die eine oder mehrere Spulen enthält | |
GB2333894B (en) | Method of fabricating capacitors in semiconductor devices | |
DE69923919D1 (de) | Halbleiterlaser, Halbleitervorrichtung und Herstellungsverfahren | |
EP1065714A4 (de) | Verfahren zur herstellen von halbleitergegenständen | |
KR960015805A (ko) | 반도체 장치의 제조 방법 | |
HK1024784A1 (en) | Semiconductor device and method of manufacturing the same. | |
JP2000031018A5 (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |