CN104377138A - 具有背面管芯金属化的模制的半导体封装 - Google Patents

具有背面管芯金属化的模制的半导体封装 Download PDF

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Publication number
CN104377138A
CN104377138A CN201410393889.4A CN201410393889A CN104377138A CN 104377138 A CN104377138 A CN 104377138A CN 201410393889 A CN201410393889 A CN 201410393889A CN 104377138 A CN104377138 A CN 104377138A
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Prior art keywords
tube core
insulating barrier
molding compound
side place
metal level
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CN201410393889.4A
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CN104377138B (zh
Inventor
V.胡贝尔
T.基尔格
D.迈尔
R.奥特伦巴
K.席斯
A.施勒格尔
B.施塔德勒
U.瓦赫特
U.瓦尔
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明涉及具有背面管芯金属化的模制的半导体封装。通过提供在管芯的第一侧处具有端子的半导体管芯，提供在该管芯的相对的第二侧处耦合到该管芯的材料，并且把该管芯嵌入到模制复合物中以便该管芯在除了第一侧外的所有侧上由该模制复合物所覆盖，来制造半导体封装。该模制复合物在邻近该管芯的第二侧的模制复合物的侧处被减薄，以在不暴露该管芯的第二侧的情况下暴露该管芯的第二侧处的材料。形成到该管芯的第一侧处的端子的电连接。在晶体管管芯的情况下，该端子能够是源端子，并且该晶体管管芯能够源极向下附接到金属块，诸如引线框的管芯座。

Description

具有背面管芯金属化的模制的半导体封装
技术领域
本申请涉及集成电路的封装，特别涉及模制的集成电路封装。
背景技术
嵌入式晶圆级球栅阵列(eWLB)是用于集成电路(IC)的封装技术，其中封装互连被施加在由个体半导体管芯（芯片）和模制复合物制成的人工晶圆或载体上。该半导体管芯被嵌入（包覆模制）到该模制复合物中。再分布层被施加到eWLB晶圆的一侧，在该侧处，管芯的焊盘是可用的。在该管芯焊盘与该再分布层之间形成电连接。在该再分布层上提供焊料凸块以在锯切该eWLB晶圆成个体IC封装之后实现封装安装。
许多类型的半导体管芯要求在该管芯的正面和背面处的接触，例如以便提供热耗散和/或电连接（在垂直器件的情况下）。常规地，在管芯的模制之后施加背面金属化到被嵌入到eWLB类型封装中的管芯。使用最后的人工晶圆厚度来完成背面金属化工艺，这能导致翘曲问题。对于背面热沉，另一种常规的途径是将不同的封装技术用于连接该热沉到被嵌入的管芯的背面，这增加了总体成本。对于其他类型的半导体管芯（诸如声或压力传感器、光发射器和光传感器等），在该管芯的背面处提供材料以提供必要的耦合（声耦合、光耦合、压力耦合等）。针对这些类型的嵌入的管芯的常规途径牵涉在该管芯模制工艺之后或通过使用附加的封装技术施加背面材料，再一次导致翘曲问题和/或更高的单位封装成本。
发明内容
根据一种制造半导体封装的方法的实施例，该方法包括：提供在管芯的第一侧处具有端子的半导体管芯；提供在与该第一侧相对的该管芯的第二侧处耦合到该管芯的材料；嵌入该管芯到模制复合物中以便该管芯在除了该第一侧外的所有侧上由该模制复合物所覆盖；在邻近该管芯的第二侧的模制复合物的侧处减薄该模制复合物，以在不暴露该管芯的第二侧的情况下暴露在该管芯的第二侧处的材料；并且形成到该管芯的第一侧处的端子的电连接。
根据一种半导体封装的实施例，该封装包括具有第一侧和与该第一侧相对的第二侧的半导体管芯、在该管芯的第一侧处的端子、在该管芯的第二侧处耦合到该管芯的材料、以及模制复合物，该管芯被嵌入到该模制复合物中以便该管芯在除了该第一侧外的所有侧上由该模制复合物所覆盖并且在该管芯的第二侧不被暴露的情况下暴露在该管芯的第二侧处的材料。该半导体封装进一步包括到该管芯的第一侧处的端子的电连接。
在晶体管管芯的情况下，该端子能够是源端子，并且该晶体管管芯能够源极向下附接到金属块（诸如引线框的管芯座）。
在阅读下面的详细描述后以及在查看附图后，本领域技术人员将认识到附加的特征和优点。
附图说明
附图中的元件不必相对于彼此按比例绘制。相似的附图标记指定对应类似的部分。各种图示的实施例的特征能够被组合，除非它们彼此排斥。实施例在附图中被描绘并且在以的描述中被详述。
图1A到1C图示在嵌入到模制复合物中之前半导体管芯的不同视图。
图2A到2I图示根据实施例的在制造模制半导体封装的方法的不同阶段期间该模制半导体封装的各个横截面视图。
图3A到3C图示在嵌入到模制复合物中之前半导体管芯的各个横截面视图，该半导体管芯具有在该管芯的背面处提供的材料。
图4A到4F图示根据另一个实施例的在制造模制半导体封装的方法的不同阶段期间该模制半导体封装的各个横截面视图。
图5图示根据另一个实施例的在嵌入到模制复合物中之前半导体管芯的横截面视图。
图6图示根据又一个实施例的在嵌入到模制复合物中之前半导体管芯的横截面视图。
图7A到7C图示根据实施例的被附接到引线框的管芯座和引线的模制的半导体封装的不同视图。
图8图示根据另一个实施例的被附接到引线框的管芯座和引线的模制的半导体封装的横截面视图。
图9图示根据又一个实施例的被附接到引线框的管芯座和引线的模制的半导体封装的横截面视图。
图10图示根据再一个实施例的被附接到引线框的管芯座和引线的模制的半导体封装的横截面视图。
具体实施方式
在这里所描述的实施例提供了嵌入管芯封装技术，其中，在嵌入到模制复合物中之前给该嵌入管芯提供背面材料。该材料在背面处能被电耦合、被热耦合、被声耦合、被光耦合、被压力耦合等到该管芯。使用厚的人工（载体）衬底来执行在这里所描述的嵌入管芯封装技术的再分布工艺（诸如金属化和焊接工艺）以避免翘曲问题。其后，通过该模制复合物的研磨或其他减薄来暴露在该管芯的背面处的材料，以避免薄的人工（载体）晶圆的处理。在一些情况下，嵌入的管芯在该管芯的正面处可以具有多于一个端子。对于这些情况，为了带来从模制复合物的一侧到该模制复合物的另一侧的电连接，能够在该模制复合物中嵌入金属块或其他模穿孔（through mold via）技术。
包含图1A到1C的图1图示在嵌入到模制复合物中之前半导体管芯100的不同视图。图1A示出该管芯100的背面102的平面视图，图1B示出该管芯100的正面104的平面视图，并且图1C示出该管芯100沿着在图1A和1B中被标注为A-A'的线的横截面视图。该半导体管芯100包含正面104处的一个或多个端子106、108。例如在晶体管管芯的情况下，至少源端子106和栅端子108能被安置在管芯100的正面104处。该（一个或多个）端子106、108能够具有接合焊盘或被常规地提供有半导体管芯的任何其他类型的端子结构的形式。
半导体管芯100还包含在管芯100的背面102处所提供的材料110，该材料110被耦合到管芯100。该背面材料110与管芯100之间的耦合的类型依赖于管芯100的类型。在电耦合的情况下，该材料110是在管芯100的背面102处电耦合到该管芯100的导电材料。在另一个实施例中，该材料110是在管芯100的背面102处热耦合到该管芯100的导热材料。例如，为了热和/或电耦合到管芯100，结构化的或非结构化的铜金属层能被形成在管芯100的背面102上。在又一个实施例中，该材料110是在管芯100的背面102处声耦合到该管芯100的声导材料。
在载体衬底上放置之前或之后，在管芯100的背面102上能形成被耦合到管芯100的材料110。例如，为了热和/或电耦合到管芯100，结构化的或非结构化的铜金属层能被形成在管芯100的背面102上。在一个实施例中，在管芯晶圆级加工期间使用标准的晶圆级镀铜工艺能在管芯100的背面102上镀该铜金属层。在另一个实施例中，在该管芯100被放置在载体衬底上之后，该铜金属层能被接合或胶合到管芯100的背面102。在每种情况下，在管芯100的模制之前在该管芯100的背面102处提供该材料110。
图2A到2I图示制造包含在图1A到1C中所示出的半导体管芯100的半导体封装的方法的实施例。多个类似的管芯100被同时加工，且在封装加工完成时被分离成个体模制封装。图2A示出在多个管芯100被放置在厚的人工（载体）衬底112上之后的结构，其中为了易于图示，在图2A到2I中仅示出管芯110中的一个。每个管芯100的正面104面向载体衬底112。在该载体衬底112上邻近每个管芯100放置可选的金属块114。每个金属块114与邻近的管芯110分隔开，且具有面向与该管芯100的正面104相同的方向的第一侧116以及面向与该管芯100的背面102相同的方向的相对的第二侧118。
图2B示出在该管芯100和可选的金属块114被嵌入到模制复合物120中之后的结构。能够使用任何标准的模制复合物，诸如在常规的eWLB技术中采用的种类。例如，能够使用液体或固体模制复合物。在每种情况下，该管芯100和可选的金属块114在除了由衬底112所覆盖的侧104、116以外的所有侧上被该模制复合物120覆盖。
图2C示出在去除该载体衬底112并且在邻近管芯100的正面104的模制复合物120的侧124上提供可选的第一绝缘层122之后的结构。该第一绝缘层122能够是聚合材料，诸如聚酰亚胺、WPR（苯酚三聚氰胺基的酚醛清漆树脂材料）等。开口126被形成在第一绝缘层122中，以暴露管芯100的正面104处的端子106、108，并且可选地暴露该金属块114的面向与该管芯100的正面104相同的方向的侧116。
图2D示出在结构化的金属再分布层128（诸如结构化的铜层）被形成在邻近管芯100的正面104的模制复合物120的侧124处（例如，在可选的第一绝缘层122上，如果被提供的话）之后的结构。在该第一绝缘层122被省略的情况下，结构化的金属再分布层128被直接形成在模制复合物120的背面124以及管芯100和可选的金属块114的未覆盖的侧104、116上。再分布层128允许到管芯100的正面104处的端子106、108的电连接的再分布。结构化的金属再分布层128具有被附接到每个管芯100的一个端子（例如晶体管管芯的源端子106）的第一部分130和被附接到每个管芯100的第二端子（例如晶体管管芯的栅端子108）的第二部分132。结构化的金属再分布层128的第一和第二部分130、132从彼此断开以确保该管芯100的适当操作。
图2E示出在第二绝缘层134被形成在结构化的金属再分布层128的面向远离该管芯100的侧上之后的结构。在结构化的金属层128的每个第一部分130上方的第二绝缘层134中形成开口136。该第二绝缘层134覆盖该结构化的金属层128的每个第二部分132。该第二绝缘层134能够是适合作为焊接停止材料（对于随后的焊料球加工）和/或电隔离材料（对于随后的该再分布层128的接合，例如到引线框的管芯座）的任何电介质材料。
图2F示出在邻近管芯100的背面侧102的模制复合物120的侧138处减薄模制复合物120之后的结构。减薄模制复合物120以暴露在管芯100的背面侧102处的材料110而不暴露管芯100的背面侧102。能够使用任何适合的减薄工艺，诸如蚀刻或机械研磨。例如在机械研磨的情况下，通过光学或视觉检查、通过归因于模制复合物与管芯背面材料之间的材料密度差的研磨速度变化、通过由接触该管芯背面材料的研磨机械产生的听觉噪声等等，能够探测管芯100的背面102处的材料110。模制复合物120能被过度减薄，即，在探测到在管芯100的背面102处的材料110的暴露之后减薄工艺继续。在一个实施例中，管芯100的背面102处的材料110含有铜且是至少10μm厚的，以确保该管芯100的背面侧102在能够包括去除该管芯背面材料110中的一些的模制复合物减薄工艺期间没有被暴露。在一个实施例中，邻近管芯100的背面102的可选金属块114的侧118在模制复合物120的减薄之前（如在图2E中所示出）被该模制复合物120覆盖并且在该模制复合物120的减薄之后（如在图2F中所示出）被暴露。对于一些应用，此时已经能够使用这样的器件。
如果背面上的再分布是期望的且能够被用于半导体管芯100，则图2G到2I中所示出的加工是可选的，其中该管芯100的背面102处的材料110被电耦合到各个管芯100。在一个实施例中，该背面材料110形成该管芯100的端子，诸如垂直晶体管管芯的漏端子，其中该管芯的正面104处的端子106、108分别是源和栅端子。
图2G示出在第三绝缘层140被形成在模制复合物120的减薄的侧138上之后的结构。该第三绝缘层140能够是聚合材料，诸如聚酰亚胺、WPR（苯酚三聚氰胺基的酚醛清漆树脂材料）等。在该第三绝缘层140中形成开口142，以暴露该管芯100的背面102处的材料110的部分，并且暴露可选的金属块114（如果被提供的话）的侧118的部分。该金属块114上方的第三绝缘层140中的开口在图2G中是看不见的。
图2H示出在金属层144（诸如铜再分布层）被形成在具有开口142的第三绝缘层140上之后的结构。如果提供了可选的金属块114，则金属层144能被结构化以致该金属层144具有第一部分146和与该第一部分146断开的第二部分（看不见）。该金属层144的第一部分146经过第三绝缘层140中的对应的开口142接触管芯100的背面102处的材料110。该金属层144的第二部分经过第三绝缘层140中的对应的开口接触该金属块114（这些开口和接触部在图2H中是看不见的）。
图2I示出在第四绝缘层148被形成在模制复合物120的减薄的侧138处的金属层144上之后的结构。在一个实施例中，该第四绝缘层148是钝化层。经过在该第四绝缘层148中形成的开口（未示出），或通过金属层144到个体封装的边缘（在图2I中未示出个体封装的分离）的横向延伸，能够与金属层144进行电连接。
图3A到3C图示根据实施例的在载体衬底112上放置之前在形成管芯100的背面102处的材料110的不同阶段期间半导体管芯100的横截面视图。图3A示出在绝缘层150（诸如抗蚀剂、酰亚胺等）被形成在管芯100的背面102上之后的管芯100。图3B示出在暴露管芯100的背面102的部分的开口152被形成在该绝缘层150中之后的管芯100。图3C示出在例如通过电镀或淀积在该绝缘层150中的开口152中形成含铜材料110之后的管芯100。根据这个实施例，该材料110在放置在载体衬底112之前被直接附接到管芯100的背面102。
图4A到4F图示制造包含被嵌入到模制复合物中的半导体管芯的半导体封装的方法的另一个实施例。图4A示出在多个管芯100被放置在载体衬底112上之后的结构，其中为了易于图示，在图4A到4F中仅示出该管芯100中的一个。管芯100的正面104面向载体衬底112，在正面104处安置了管芯端子106、108。根据这个实施例，管芯100的背面102处的材料110是在该管芯100的背面102处热耦合到各个管芯100的导热材料。该导热材料110具有远离对应管芯100的背面102而延伸的鳍状结构154。在一个实施例中，该导热材料110是具有鳍状物154的铜块。该铜块110能在放置在载体衬底112上之前被镀在各个管芯100的背面102上或在放置在载体衬底112上之后被接合到各个管芯100的背面102，如在这里先前所描述。在任一种情况下，在管芯100被嵌入到模制复合物中之前在各个管芯100的背面102处提供该导热材料110。
图4B示出在用顶部密封（glob top）材料156覆盖鳍状结构154之后的结构。顶部密封是特殊制备的树脂，其被淀积在管芯100上方以提供机械支撑并且排除能破坏电路操作的污染物。能够使用任何商业上可用的顶部密封材料。
图4C示出在嵌入该管芯100到模制复合物120中以便除了由载体衬底112覆盖的侧外该管芯100的所有侧由该模制复合物120所覆盖之后的结构。在模制复合物120的形成期间，管芯100的背面102处的导热材料110的鳍状结构154仍然用顶部密封材料156覆盖。
图4D示出在结构化的金属再分布层128（诸如结构化的铜层）被形成在邻近该管芯100的正面104的模制复合物120的侧124处之后的结构，例如依照图2C到2E并且如在这里先前所描述。
图4E示出在邻近管芯100的背面102的模制复合物120的侧138处减薄模制复合物120以在不暴露该管芯100的背面侧102的情况下暴露该管芯100的背面102处的顶部密封覆盖的导热材料110之后的结构，例如依照图2F并且如在这里先前所描述。
图4F示出在模制复合物120的减薄之后从该管芯100的背面102处的导热材料110中去除顶部密封材料156之后的结构。能够使用不损害模制复合物120的任何标准溶剂来去除该顶部密封材料156。
图5图示根据在这里所描述的嵌入包装技术要被嵌入到模制复合物中的半导体管芯100的又一个实施例的横截面视图。在一个实施例中，该管芯100在该管芯100的背面102处可操作来发射或感测光（例如在LED或光电二极管的情况下）。根据这个实施例，该管芯100的背面102处的材料110是半透明材料160（诸如玻璃块），该半透明材料160通过粘合剂162附接到该管芯100的背面102且被光耦合到管芯100，以便该管芯100能探测或发射经过半透明材料160的光。在另一个实施例中，该管芯100是压力传感器或传声器管芯，并且该材料160允许压力或声音经过该材料160并且到达该管芯100。
图6图示根据在这里所描述的嵌入包装技术要被嵌入到模制复合物中的半导体管芯100的再一个实施例的横截面视图。在一个实施例中，管芯100包含感测管芯100的背面102处的压力的压力传感器。根据这个实施例，管芯100的背面102处的材料110是可压缩的顶部密封材料170，使该压力传感器能够感测压力。在另一个实施例中，该管芯100是LED或光电二极管管芯，并且顶部密封材料170是半透明的。
在一些情况下，根据在这里所描述的嵌入包装技术而被嵌入到模制复合物中的管芯是垂直晶体管管芯，在该垂直晶体管管芯中，电流流动经过管芯的正面和背面之间的半导体材料。例如参考图1A到1C，该晶体管的源和栅端子被安置在该管芯的正面处，并且漏端子被安置在该管芯的背面处。如在这里所使用的术语“源端子”指代FET（场效应晶体管）（诸如MOSFET（金属氧化物半导体FET）或GaN HEMT（高电子迁移率晶体管））的源端子，或双极型晶体管（诸如IGBT（绝缘栅双极型晶体管））的发射极端子。同样地，如在这里所使用的术语“漏端子”指代FET的漏端子或双极型晶体管的集电极端子。
图7A到7C图示在附接到引线框的管芯座202和引线204之后半导体封装200的不同视图。图7A示出半导体封装200的沿着在图7B和7C中被标注为B-B'的线的横截面视图，图7B是该封装200的顶视平面视图，并且图7C是引线框的管芯座202和引线204的顶视平面视图。该半导体封装200对应于根据在图2A到2F中所图示的嵌入包装方法而生产的封装。
根据这个实施例，半导体管芯100是垂直晶体管管芯，其在面向管芯座202的管芯100的正面104处具有源（S）端子106和栅（G）端子108以及在管芯100的背面102处具有由材料110形成的漏（D）端子。根据这个实施例，管芯100的背面处的材料110是导电的，例如诸如铜层。根据这个实施例，晶体管管芯100的源端子106在面向远离该管芯100的源端子106的侧处通过导电胶206附接到引线框的管芯座202。该导电胶206填充在图4D中所示出的绝缘层134中形成的开口136。如果期望的话，该导电胶206能够用作底部填充。绝缘层134将管芯座202与晶体管管芯100的栅端子108电绝缘。
封装200的结构化的金属再分布层128的第二部分132在晶体管管芯100的正面104处提供金属块114与栅端子108之间的电连接。该金属块114的相对侧118通过一个或多个接合线、带状物、金属夹或其他类型的电导体208连接到引线框的栅G引线204。由管芯100的背面102处的材料110形成的漏端子类似地通过一个或多个接合线、带状物、金属夹或其他类型的电导体210在面向远离该管芯100的导电材料110的侧处连接到引线框的漏D引线204。
图8图示根据另一个实施例的半导体封装200的横截面视图。在图8中所示出的实施例类似于在图7A中所示出的实施例，然而，根据这个实施例，焊料212填充在图4D中所示出的绝缘层134中形成的开口136并将晶体管管芯100的源端子106电连接到引线框的管芯座202。
图9图示根据又一个实施例的半导体封装200的横截面视图。在图9中所示出的实施例类似于在图7A中所示出的实施例，然而，提供了填充在图4D中所示出的绝缘层134中形成的开口136的附加金属层214，诸如第二铜再分布层。该附加金属层214能够覆盖晶体管管芯100的整个正面104。该附加金属层214能够部分或完全覆盖面向远离结构化的铜金属层128的绝缘层134的侧。例如在非结构化的铜再分布层的情况下，该附加金属层214完全覆盖面向远离该结构化的铜金属层128的绝缘层134的侧。例如通过焊料216，该附加金属层214能够被附接到该管芯座202。该附加金属层214被插入在绝缘层134和管芯座202之间，在附加金属层214的一侧处接触管芯座202，并经过绝缘层134中的开口136接触结构化的金属层128的第一部分130。该附加金属层214通过绝缘层134与结构化的金属层128的第二部分132分隔开。
图10图示根据再一个实施例的半导体封装200的横截面视图。在图10中所示出的实施例类似于在图7A中所示出的实施例，然而，焊料或导电胶218填充在图4D中所示出的绝缘层134中形成的开口136并将晶体管管芯100的源端子106电连接到引线框的管芯座202。根据这个实施例，焊料/导电胶218还充当部分底部填充，如焊料/导电胶218到面向管芯座202的绝缘层134的侧上的横向延伸所指示。能够提供附加模制复合物或其他适合的非导电材料220以完成在封装200下面的底部填充。支撑座222能被嵌入到附加模制复合物220中，以阻止在焊料218被用来填充在绝缘层134中形成的开口136的情况下焊料浸润期间该封装200的倾斜。
为了易于描述，使用空间相对术语（诸如“在...之下”、“在...以下”、“下”、“在…上方”、“上”等等）来解释一个元件相对于第二个元件的定位。这些术语旨在包括除了与在附图中所描绘的那些取向不同的取向以外器件的不同取向。此外，诸如“第一”、“第二”等等的术语也用来描述各种元件、区、片段等，且也不旨在限制。贯穿本描述，相似的术语指代相似的元件。
如在这里所使用，术语“具有”、“含有”、“包含”、“包括”等等是开放式术语，其指示所声明的元件或特征的存在，而不排除附加的元件或特征。冠词“一”、“一个”和“该”旨在包含复数以及单数，除非上下文另外清楚地指示。
考虑到变型和应用的上述范围，应当理解的是，本发明不是由前面的描述限制的，也不是由附图限制的。取而代之，本发明仅由下面所附的权利要求书以及它们的法律等同物限制。

Claims (36)

1.一种制造半导体封装的方法，所述方法包括：
提供半导体管芯，所述半导体管芯具有在所述管芯的第一侧处的端子；
提供在与所述第一侧相对的所述管芯的第二侧处耦合到所述管芯的材料；
嵌入所述管芯到模制复合物中以便所述管芯在除了所述第一侧的所有侧上由所述模制复合物所覆盖；
在邻近所述管芯的第二侧的模制复合物的侧处减薄所述模制复合物，以在不暴露所述管芯的第二侧的情况下暴露在所述管芯的第二侧处的材料；以及
形成到在所述管芯的所述第一侧处的所述端子的电连接。
2.权利要求1的所述方法，其中在所述管芯的第二侧处的材料是导热材料，所述导热材料在所述管芯的第二侧处被热耦合到所述管芯并且具有远离所述管芯的第二侧延伸的鳍状结构，所述方法进一步包括：
用在所述模制复合物的形成期间在鳍状结构上余留的顶部密封材料来覆盖所述鳍状结构；以及
在所述模制复合物的减薄之后去除所述顶部密封材料。
3.权利要求1的所述方法，进一步包括嵌入金属块到所述模制复合物中并且通过所述模制复合物的部分将所述金属块与所述管芯分隔开，所述金属块具有面向与所述管芯的第一侧相同的方向且不被所述模制复合物覆盖的第一侧以及面向与所述管芯的第二侧相同的方向的相对的第二侧。
4.权利要求3的所述方法，其中所述金属块的第二侧在所述模制复合物的减薄之前由所述模制复合物所覆盖并且在所述模制复合物的减薄之后被暴露。
5.权利要求3的所述方法，进一步包括形成在所述金属块的第一侧与安置在所述管芯的第一侧处的附加的端子之间的电连接。
6.权利要求1的所述方法，其中在嵌入所述管芯到所述模制复合物中之前，提供在所述管芯的第二侧处的材料包括：
在所述管芯的第二侧上形成绝缘层；
在所述绝缘层中形成开口，所述开口暴露所述管芯的第二侧的至少部分；以及
在所述绝缘层的所述开口中形成含铜材料。
7.权利要求1的所述方法，其中所述模制复合物通过机械研磨工艺被减薄，所述机械研磨工艺在研磨所述管芯的第二侧之前停止。
8.权利要求1的所述方法，进一步包括：
在所述模制复合物的减薄的侧上形成绝缘层；
在所述绝缘层中形成一个或多个开口，所述一个或多个开口暴露在所述管芯的第二侧处的材料的部分；以及
在具有一个或多个开口的所述绝缘层上形成金属层，所述金属层经过在所述绝缘层中的一个或多个开口接触在所述管芯的第二侧处的材料。
9.权利要求1的所述方法，其中所述管芯是晶体管管芯，在所述管芯的第一侧处的端子是所述晶体管管芯的源端子并且在所述管芯的第二侧处的材料形成所述晶体管管芯的漏端子。
10.权利要求9的所述方法，进一步包括在面向远离所述晶体管管芯的所述源端子的侧处附接所述晶体管管芯的源端子到引线框的管芯座。
11.权利要求9的所述方法，其中所述晶体管管芯具有在所述管芯的第一侧处并且与所述源端子分隔开的栅端子，所述方法进一步包括：
嵌入金属块到所述模制复合物中并且通过所述模制复合物的部分将所述金属块与所述管芯分隔开，所述金属块具有面向与所述晶体管管芯的第一侧相同的方向且不被所述模制复合物覆盖的第一侧以及面向与所述晶体管管芯的第二侧相同的方向的相对的第二侧；以及
形成在所述金属块的第一侧与在所述晶体管管芯的第一侧处的栅端子之间的电连接。
12.权利要求9的所述方法，其中所述晶体管管芯具有在所述管芯的第一侧处并且与所述源端子分隔开的栅端子，所述方法进一步包括：
在邻近所述晶体管管芯的第一侧的所述模制复合物的侧处形成结构化的金属层，所述结构化的金属层包括附接到所述晶体管管芯的源端子的第一部分以及与所述第一部分断开并且被附接到所述晶体管管芯的栅端子的第二部分；
在面向远离所述晶体管管芯的所述结构化的金属层的侧上形成绝缘层，所述绝缘层具有在所述结构化的金属层的第一部分上方的开口并且覆盖所述结构化的金属层的第二部分；以及
在面向远离所述结构化的铜金属层的绝缘层的侧处提供引线框的管芯座，所述管芯座经过在所述绝缘层中的开口被电连接到所述晶体管管芯的源端子并且通过所述绝缘层与所述晶体管管芯的栅端子电绝缘。
13.权利要求12的所述方法，进一步包括通过导电材料附接所述管芯座到所述结构化的金属层的所述第一部分，所述导电材料填充在所述绝缘层中的开口。
14.权利要求12的所述方法，进一步包括形成附加的金属层，所述附加的金属层填充在所述绝缘层中的开口并且至少部分覆盖面向远离所述结构化的铜金属层的绝缘层的侧，其中所述附加的金属层放入在所述绝缘层和所述管芯座之间，在所述附加的金属层的一侧处接触所述管芯座，经过在所述绝缘层中的开口接触所述结构化的金属层的所述第一部分，并且通过所述绝缘层与所述结构化的金属层的所述第二部分分隔开。
15.一种半导体封装，包括：
半导体管芯，具有第一侧和与所述第一侧相对的第二侧；
在所述管芯的所述第一侧处的端子；
在所述管芯的所述第二侧处被耦合到所述管芯的材料；
模制复合物，嵌入所述管芯到所述模制复合物中以便所述管芯在除了所述第一侧的所有侧上由所述模制复合物所覆盖并且在不暴露所述管芯的第二侧的情况下暴露在所述管芯的第二侧处的材料；以及
到在所述管芯的所述第一侧处的所述端子的电连接。
16.权利要求15的所述半导体封装，其中在所述管芯的第二侧处的材料是导电材料，所述导电材料在所述管芯的第二侧处被电耦合到所述管芯，所述半导体封装进一步包括引线，所述引线在面向远离所述管芯的所述导电材料的侧处被电连接所述导电材料。
17.权利要求15的所述半导体封装，其中在所述管芯的第二侧处的材料是导热材料，所述导热材料在所述管芯的第二侧处被热耦合到所述管芯。
18.权利要求17的所述半导体封装，其中所述导热材料具有远离所述管芯的第二侧延伸的鳍状结构。
19.权利要求15的所述半导体封装，其中在所述管芯的第二侧处的材料是声导材料，所述声导材料在所述管芯的第二侧处被声耦合到所述管芯。
20.权利要求15的所述半导体封装，其中所述管芯可操作来发射或感测光并且在所述管芯的第二侧处的材料是半透明材料，所述半透明材料在所述管芯的第二侧处被光耦合到所述管芯。
21.权利要求15的所述半导体封装，其中在所述管芯的第二侧处的材料是顶部密封材料。
22.权利要求15的所述半导体封装，其中在所述管芯的第二侧处的材料含有铜并且是至少10μm厚的。
23.权利要求15的所述半导体封装，进一步包括被嵌入到所述模制复合物中并且通过所述模制复合物的部分与所述管芯分隔开的金属块，所述金属块具有面向与所述管芯的第一侧相同的方向且不被所述模制复合物覆盖的第一侧以及面向与所述管芯的第二侧相同的方向的相对的第二侧。
24.权利要求23的所述半导体封装，进一步包括在所述金属块的第一侧与安置在所述管芯的第一侧处的附加的端子之间的电连接。
25.权利要求24的所述半导体封装，进一步包括被电连接到所述金属块的第二侧的引线。
26.权利要求15的所述半导体封装，进一步包括：
绝缘层，在邻近所述管芯的第二侧的所述模制复合物的侧上；以及
开口，在所述管芯的第二侧的至少部分上方的绝缘层中，其中在所述管芯的第二侧处的材料是在所述绝缘层中的所述开口中安置的含铜材料。
27.权利要求15的所述半导体封装，进一步包括：
在所述模制复合物的减薄的侧上的绝缘层，所述绝缘层在所述管芯的第二侧处的材料的部分上方具有一个或多个开口；以及
在所述绝缘层上的金属层，所述金属层经过在所述绝缘层上的一个或多个开口接触在所述管芯的第二侧处的材料。
28.权利要求15的所述半导体封装，其中所述管芯是晶体管管芯，在所述管芯的第一侧处的端子是所述晶体管管芯的源端子并且在所述管芯的第二侧处的材料形成所述晶体管管芯的漏端子。
29.权利要求28的所述半导体封装，进一步包括引线框的管芯座，其中所述晶体管管芯的所述源端子在面向远离所述晶体管管芯的所述源端子的侧处被附接到所述管芯座。
30.权利要求28的所述半导体封装，其中所述晶体管管芯具有在管芯的第一侧处的并且与所述源端子分隔开的栅端子。
31.权利要求30的所述半导体封装，进一步包括：
金属块，被嵌入到所述模制复合物中并且通过所述模制复合物的部分与所述管芯分隔开，所述金属块具有面向与所述晶体管管芯的第一侧相同的方向且不被所述模制复合物覆盖的第一侧以及面向与所述晶体管管芯的第二侧相同的方向的相对的第二侧；以及
电连接，在所述金属块的第一侧与在所述晶体管管芯的第一侧处的栅端子之间。
32.权利要求30的所述半导体封装，进一步包括：
结构化的金属层，在邻近所述晶体管管芯的第一侧的所述模制复合物的侧处，所述结构化的金属层包括被附接到所述晶体管管芯的源端子的第一部分以及与所述第一部分断开并且被附接到所述晶体管管芯的栅端子的第二部分；
绝缘层，在面向远离所述晶体管管芯的所述结构化的金属层的侧上，所述绝缘层具有在所述结构化的金属层的第一部分上方的开口并且覆盖所述结构化的金属层的第二部分；以及
在面向远离所述结构化的铜金属层的绝缘层的侧处的引线框的管芯座，所述管芯座经过在所述绝缘层中的开口被电连接到所述晶体管管芯的源端子并且通过所述绝缘层与所述晶体管管芯的栅端子电绝缘。
33.权利要求32的所述半导体封装，其中所述管芯座通过导电材料被附接到所述结构化的金属层的所述第一部分，所述导电材料填充在所述绝缘层中的开口。
34.权利要求33的所述半导体封装，其中所述导电材料覆盖所述晶体管管芯的整个第一侧。
35.权利要求32的所述半导体封装，进一步包括附加的金属层，所述附加的金属层填充在所述绝缘层中的开口且至少部分覆盖面向远离所述结构化的铜金属层的绝缘层的侧，其中所述附加的金属层放入在所述绝缘层和所述管芯座之间，在所述附加的金属层的一侧处接触所述管芯座，经过在所述绝缘层中的开口接触所述结构化的金属层的所述第一部分，并且通过所述绝缘层与所述结构化的金属层的所述第二部分分隔开。
36.权利要求35的所述半导体封装，其中所述附加的金属层覆盖所述晶体管管芯的整个第一侧。
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