CN112750709B - 一种大功率mos管的封装方法 - Google Patents
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Abstract
本发明涉及一种大功率MOS管的封装方法,在MOS管顶部增加了散热层,提高了散热效果;利用散热层与源极导出线路链接,使塑封层中埋置了至少两层金属线路来提高互连层的载电流能力;在MOS芯片上直接焊接铜框架来降低芯片Pad在封装过程中所受物理和化学伤害风险,并降低了贴片精度的要求。
Description
技术领域
本发明涉及半导体封装技术领域,具体涉及一种大功率MOS管的封装方法。
背景技术
随着电子产品向小型化、集成化发展,对于电子产品内部所使用的大功率MOS管这类电源元器件,要求越来越小、越来越薄,并且具有良好的散热能力。
大功率MOS管的体积和外形不仅受到MOS芯片的设计和制程工艺影响,还与其封装工艺息息相关。常见的大功率MOS管封装类型有TO型、SOP型、SOT型,以及更加先进、体积更小、外形更薄的DFN型。
好的封装工艺,不仅可以最低限度的占用体积和高度,而且具有优秀的互连层载电流能力以及散热效果。
发明内容
鉴于上述,本发明提供了一种大功率MOS管的封装方法,该方法以先进的Fan-outpanel级封装技术为基础,兼容了PCB厂加工方式形成一种DFN型的封装规格,可以有效提高互连层载电流能力以及散热效果,并且占用体积小、高度低;同时扩大了有效加工面积和加工数量,降低了加工精度要求,利于低成本量产。
一种大功率MOS管的封装方法,包括以下步骤:
A、准备panel级的载体,在载体上制作用于导出MOS芯片漏极的第一铜块、用于导出MOS芯片栅极的第二铜块,以及用于导出MOS芯片源极的第三铜块;
B、将MOS芯片底面的漏极焊接固定在第一铜块上;
C、在MOS芯片顶面的栅极和源极的顶部分别制作铜块;
D、将载板上的器件进行塑封,形成塑封层;
E、在塑封层上制作栅极导出线路,栅极导出线路一端连接栅极,另一端与第二铜块连接;
同时在塑封层上制作源极导出线路,源极导出线路一端连接源极,另一端与第三铜块连接;
F、在塑封层上压合PP;
G、在粘结层上采用金属材料制作散热层,并沿着源极导出线路制作多个与散热层连接的铜柱;
H、将封装后的器件与载体分离,并在种子层底面进行蚀刻,使第一铜块、第二铜块和第三铜块的底部形成焊盘并相互断开种子层的连接。
优选的,步骤A具体包括:
A1、在载体的顶面溅射一层薄铜作为可分离的种子层;
A2、通过图形工艺将第一铜块、第二铜块和第三铜块的位置图形转移到种子层上;
A3、在图形中第一铜块、第二铜块和第三铜块的位置通过电镀生长出铜块,形成第一铜块、第二铜块和第三铜块。
优选的,第三铜块表面积大于第二铜块的表面积。
优选的,步骤C的具体包括:
C1、预制一铜框架,铜框架上设置有与MOS芯片的栅极和源极间距对应的铜块,以及用于连接、固定铜块的连筋;
C2、将铜框架上的铜块与栅极和源极一一对应焊接。
优选的,步骤E具体包括:
E1、对塑封后的器件的顶部进行打磨减薄,并磨掉铜框架的连筋,使铜框架上的铜块相互独立;
E2、从塑封层顶面正对第二铜块钻盲孔至第二铜块顶面,并从塑封层顶面正对第三铜块钻盲孔至第三铜块顶面;
E3、通过沉铜电镀,使钻孔的孔壁以及塑封层上表面形成镀铜,第二铜块上方钻孔形成栅极导通孔,第三铜块上方钻孔形成源极导通孔;
E4、通过图形工艺将塑封层上表面的镀铜制成栅极导出线路和源极导出线路。
优选的,源极导通孔为槽型孔。
优选的,步骤G具体包括:
G1、沿源极导出线路,在粘结层上钻多个盲孔至源极导出线路;
G2、通过沉铜电镀,在粘结层上表面及盲孔内镀铜,盲孔镀铜后形成铜柱,粘结层上表面的镀铜层作为散热层;
源极导电线路为了满足过大电流需要比较厚的铜厚,但是源极导电线路仅为该电路层的部分电路,生产时却需要增加该层电路层整体的铜厚,使沉铜电镀用料和工时增加,另外该电路层蚀刻线路、阻焊的难度和成本也会相应提高;
散热层除了源极导电线路之外不与其他电路导通,因此可以利用散热层来增强源极导电线路的过电流能力,降低源极导电线路的铜厚需求;
散热层接近成品外层,在散热层的外部涂覆阻焊层属于必要的常规处理,没有额外成本产生。
优选的,在粘结层上的多个盲孔,至少一个盲孔位于第一铜块的上方。
优选的,载体的材料为钢板。
本发明的有益效果是:顶部增加了散热层,提高了散热效果;利用散热层与源极导出线路链接,使塑封层中埋置了至少两层金属线路来提高互连层的载电流能力;在MOS芯片上直接焊接铜框架来降低芯片Pad在封装过程中所受物理和化学伤害风险,并降低了贴片精度的要求。
附图说明
图1是实施例步骤A中载体及第一铜块、第二铜块、第三铜块的位置示意图。
图2是实施例步骤B中将MOS芯片固定在第一铜块上的结构示意图。
图3是实施例步骤C的焊接铜框架后的结构示意图。
图4是实施例步骤D和E中,对器件进行塑封、打磨减薄、并钻出栅极导通孔和源极导通孔后的结构示意图。
图5是实施例步骤E中,经沉铜电镀、图形工艺加工后,形成栅极导出线路及源极导出线路后的结构示意图。
图6是实施例步骤G中,生成散热层及铜柱后的结构示意图。
图7是分离载体后的成型器件结构示意图。
图8是成型器件的整体结构示意图。
图9是源极导出线路与源极导通孔的连接示意图。
图中:
1-载体,2c-第一铜块,2a-第二铜块,2b-第三铜块,3c-漏极,3a栅极,3b-源极,4-MOS芯片,5-铜框架,6-塑封层,7-栅极导通孔,8-源极导通孔,9a-栅极导出线路,9b-源极导出线路,10-粘结层,11-铜柱,12-散热层,13-顶部阻焊层,14-器件PAD,15-底部阻焊层。
具体实施方式
下面结合附图1~9并通过具体实施方式来进一步说明一种大功率MOS管的封装方法的技术方案。
制作一种大功率MOS管,步骤如下:
A、准备panel级的钢板作为载体1,载体1最终需要与产品分离,因此加工前在载体1的顶面先溅射一层薄铜作为可分离的种子层;
通过图形工艺将第一铜块、第二铜块和第三铜块的位置图形转移到种子层上,然后在图形中第一铜块、第二铜块和第三铜块的位置通过电镀生长出铜块,形成用于导出MOS芯片4的漏极3c的第一铜块2c、用于导出MOS芯片栅极3a的第二铜块2a、以及用于导出MOS芯片4的源极3b的第三铜块2b。
B、使用贴片机将MOS芯片4底面的漏极3c焊接固定在第一铜块2c上,而栅极和源极朝上。
C、预制一已镀锡的铜框架5,铜框架5上设置有与MOS芯片的栅极3a和源极3b间距对应的铜块,以及用于连接、固定铜块的连筋,其中对应源极3b的铜块面积较大,并且要确保能满足器件本身的载电流能力;
将铜框架5上的铜块与栅极3a和源极3b一一对应焊接,焊接后,铜框架5位于栅极3a和源极3b的顶部。
D、采用真空压合工艺对载板1上的器件进行塑封,形成塑封层6,此时MOS芯片4以及铜框架5都被塑封料包住。
E、对塑封后的器件的顶部进行打磨减薄,并磨掉所述铜框架5的连筋,使铜框架5上的铜块相互独立;
用激光钻从塑封层6顶面正对第二铜块2a钻盲孔至第二铜块2a顶面,并从塑封层6顶面正对第三铜块2b钻盲孔至第三铜块2b顶面;
通过沉铜电镀,使钻孔的孔壁以及塑封层6上表面形成镀铜,第二铜块2a上方钻孔形成栅极导通孔7,第三铜块2b上方钻孔形成源极导通孔8;
通过图形工艺将塑封层6上表面的镀铜制成栅极导出线路9a和源极导出线路9b;
至此,栅极3a经栅极导出线路9a、栅极导通孔7与第二铜块2a导通,源极3b经源极导出线路9b、源极导通孔8与第三铜块2b导通;
因为源极3b载电流较大,因此钻孔时可以增加钻孔截面,比如形成槽型孔,沉铜电镀时孔壁会附着更多沉铜,增强载流能力。
F、在塑封层6上压合PP,形成粘结层10;
粘结层10中的PP料绝缘隔离栅极3a与源极3b之间的外部线路;
粘结层10还起到增加整体器件的强度的作用。
G、首先沿源极导出线路9b,在粘结层10上钻多个盲孔至源极导出线路9b;
然后通过沉铜电镀,在粘结层10上表面及盲孔内镀铜,盲孔镀铜后形成铜柱11,粘结层10上表面的镀铜层作为散热层12;
在散热层12外部覆盖一层薄薄的顶部阻焊层13作为保护层;
铜柱11不仅加速散热扩散到散热层12,还可以链接源极导出线路9b与外层的散热层12,增加了载电流能力。
H、将封装后的器件与载体1分离,露出底面的种子层;
在种子层底面进行蚀刻,然后使用沉铜电镀和蚀刻图形工艺在第一铜块、第二铜块和第三铜块的位置分别形成器件PAD14,同时断开第一铜块、第二铜块和第三铜块通过种子层的连接,相互之间完全独立;
成型后的MOS器件,第一铜块2c作为器件的漏极,第二铜块2a作为器件的栅极,第三铜块2b作为器件的源极;
除器件Pad14之外的器件底面,通过制作底部阻焊层15进行覆盖和保护;
最后使用常见的金属表面涂敷工艺,如化锡、化银、化镍金等来保护器件PAD 14,以提高可焊接能力并避免氧化。
本发明的不局限于上述实施例,本发明的上述各个实施例的技术方案彼此可以交叉组合形成新的技术方案,另外凡采用等同替换形成的技术方案,均落在本发明要求的保护范围内。
Claims (4)
1.一种大功率MOS管的封装方法,其特征在于,包括以下步骤:
A、准备panel级的载体,在载体上制作用于导出MOS芯片漏极的第一铜块、用于导出MOS芯片栅极的第二铜块,以及用于导出MOS芯片源极的第三铜块;
B、将MOS芯片底面的漏极焊接固定在第一铜块上;
C、在MOS芯片顶面的栅极和源极的顶部分别制作铜块;
D、将载板上的器件进行塑封,形成塑封层;
E、在塑封层上制作栅极导出线路,所述栅极导出线路一端连接栅极,另一端与第二铜块连接;
同时在塑封层上制作源极导出线路,所述源极导出线路一端连接源极,另一端与第三铜块连接;
F、在塑封层上压合PP,形成粘结层;
G、在粘结层上采用金属材料制作散热层,并沿着源极导出线路制作多个与散热层连接的铜柱;
H、将封装后的器件与载体分离,然后在种子层底面进行蚀刻,使第一铜块、第二铜块和第三铜块的底部形成焊盘并相互断开种子层的连接;
所述步骤C具体包括:
C1、预制一镀锡的铜框架,所述铜框架上设置有与MOS芯片的栅极和源极间距对应的铜块,以及用于连接、固定铜块的连筋;
C2、将铜框架上的铜块与栅极和源极一一对应焊接;
所述步骤E具体包括:
E1、对塑封后的器件的顶部进行打磨减薄,并磨掉所述铜框架的连筋,使铜框架上的铜块相互独立;
E2、从塑封层顶面正对第二铜块钻盲孔至第二铜块顶面,并从塑封层顶面正对第三铜块钻盲孔至第三铜块顶面;
E3、通过沉铜电镀,使钻孔的孔壁以及塑封层上表面形成镀铜,第二铜块上方钻孔形成栅极导通孔,第三铜块上方钻孔形成源极导通孔;所述源极导通孔为槽型孔;
E4、通过图形工艺将塑封层上表面的镀铜制成栅极导出线路和源极导出线路;
所述步骤G具体包括:
G1、沿源极导出线路,在粘结层上钻多个盲孔至源极导出线路;其中,至少一个盲孔位于第一铜块的上方;
G2、通过沉铜电镀,在粘结层上表面及盲孔内镀铜,盲孔镀铜后形成铜柱,粘结层上表面的镀铜层作为散热层。
2.如权利要求1所述大功率MOS管的封装方法,其特征在于,所述步骤A具体包括:
A1、在载体的顶面溅射一层薄铜作为可分离的种子层;
A2、通过图形工艺将第一铜块、第二铜块和第三铜块的位置图形转移到种子层上;
A3、在图形中第一铜块、第二铜块和第三铜块的位置通过电镀生长出铜块,形成第一铜块、第二铜块和第三铜块。
3.如权利要求2所述大功率MOS管的封装方法,其特征在于,所述第三铜块表面积大于所述第二铜块的表面积。
4.如权利要求1所述大功率MOS管的封装方法,其特征在于,所述载体的材料为钢板。
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