CN104347719B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN104347719B
CN104347719B CN201410380207.6A CN201410380207A CN104347719B CN 104347719 B CN104347719 B CN 104347719B CN 201410380207 A CN201410380207 A CN 201410380207A CN 104347719 B CN104347719 B CN 104347719B
Authority
CN
China
Prior art keywords
diffusion layer
contact
contact holes
type
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410380207.6A
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English (en)
Chinese (zh)
Other versions
CN104347719A (zh
Inventor
桑沢和伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN104347719A publication Critical patent/CN104347719A/zh
Application granted granted Critical
Publication of CN104347719B publication Critical patent/CN104347719B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/155—Shapes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201410380207.6A 2013-08-05 2014-08-04 半导体装置 Expired - Fee Related CN104347719B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-162289 2013-08-05
JP2013162289A JP6252022B2 (ja) 2013-08-05 2013-08-05 半導体装置

Publications (2)

Publication Number Publication Date
CN104347719A CN104347719A (zh) 2015-02-11
CN104347719B true CN104347719B (zh) 2018-09-28

Family

ID=52426889

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410380207.6A Expired - Fee Related CN104347719B (zh) 2013-08-05 2014-08-04 半导体装置

Country Status (3)

Country Link
US (1) US9012991B2 (enExample)
JP (1) JP6252022B2 (enExample)
CN (1) CN104347719B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102450572B1 (ko) * 2015-10-13 2022-10-11 삼성전자주식회사 메모리 장치
US9449986B1 (en) * 2015-10-13 2016-09-20 Samsung Electronics Co., Ltd. 3-dimensional memory device having peripheral circuit devices having source/drain contacts with different spacings
EP3319127B1 (en) * 2016-11-07 2020-12-30 ams AG Field effect transistor device with separate source and body contacts and method of producing the device
JP6971877B2 (ja) * 2018-02-20 2021-11-24 ルネサスエレクトロニクス株式会社 半導体装置
JP6892889B2 (ja) * 2019-04-15 2021-06-23 合肥晶合集成電路股▲ふん▼有限公司 高耐圧半導体素子及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201444A (zh) * 2010-03-25 2011-09-28 株式会社东芝 半导体装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3719642B2 (ja) 2000-03-01 2005-11-24 松下電器産業株式会社 半導体装置
JP2002064206A (ja) 2000-06-09 2002-02-28 Toshiba Corp 半導体装置及びその製造方法
JP3524850B2 (ja) 2000-08-03 2004-05-10 三洋電機株式会社 絶縁ゲート型電界効果半導体装置
TW594993B (en) 2001-02-16 2004-06-21 Sanyo Electric Co Semiconductor device and manufacturing process therefor
JP4454921B2 (ja) * 2002-09-27 2010-04-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100514181B1 (ko) * 2003-09-03 2005-09-13 삼성에스디아이 주식회사 시리즈 박막트랜지스터, 그를 이용한 능동 매트릭스유기전계발광소자 및 상기 능동 매트릭스유기전계발광소자의 제조방법
KR100648276B1 (ko) * 2004-12-15 2006-11-23 삼성전자주식회사 역방향 다이오드가 구비된 수직형 디모스 소자
JP2006245548A (ja) * 2005-02-01 2006-09-14 Toshiba Corp 半導体装置
JP4840738B2 (ja) * 2005-03-15 2011-12-21 株式会社デンソー 半導体装置とその製造方法
US7535057B2 (en) * 2005-05-24 2009-05-19 Robert Kuo-Chang Yang DMOS transistor with a poly-filled deep trench for improved performance
JP4630207B2 (ja) * 2006-03-15 2011-02-09 シャープ株式会社 半導体装置
CN200969352Y (zh) * 2006-04-24 2007-10-31 Bcd半导体制造有限公司 横向dmos结构
JP2007053399A (ja) 2006-10-18 2007-03-01 Sanyo Electric Co Ltd 半導体装置
US7851889B2 (en) * 2007-04-30 2010-12-14 Freescale Semiconductor, Inc. MOSFET device including a source with alternating P-type and N-type regions
US7781834B2 (en) * 2007-07-03 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Robust ESD LDMOS device
JP2009164417A (ja) 2008-01-08 2009-07-23 Panasonic Corp 半導体装置
JP2009231443A (ja) 2008-03-21 2009-10-08 Oki Semiconductor Co Ltd 高耐圧半導体デバイス、及び高耐圧半導体デバイスの製造方法
JP4587003B2 (ja) 2008-07-03 2010-11-24 セイコーエプソン株式会社 半導体装置
US8482065B2 (en) * 2008-11-25 2013-07-09 Newport Fab, Llc MOS transistor with a reduced on-resistance and area product
JP5455801B2 (ja) * 2010-06-10 2014-03-26 株式会社東芝 半導体装置
JP5700649B2 (ja) * 2011-01-24 2015-04-15 旭化成エレクトロニクス株式会社 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201444A (zh) * 2010-03-25 2011-09-28 株式会社东芝 半导体装置

Also Published As

Publication number Publication date
US9012991B2 (en) 2015-04-21
CN104347719A (zh) 2015-02-11
JP2015032733A (ja) 2015-02-16
JP6252022B2 (ja) 2017-12-27
US20150035056A1 (en) 2015-02-05

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Granted publication date: 20180928