CN104271239B - 制造合成单晶金刚石材料的方法 - Google Patents

制造合成单晶金刚石材料的方法 Download PDF

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Publication number
CN104271239B
CN104271239B CN201380022945.7A CN201380022945A CN104271239B CN 104271239 B CN104271239 B CN 104271239B CN 201380022945 A CN201380022945 A CN 201380022945A CN 104271239 B CN104271239 B CN 104271239B
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seed
range
single crystal
pressure
crystal diamond
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Chinese (zh)
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CN104271239A (zh
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D·玻瑟
E·古拉
C·N·道吉
R·A·斯皮特斯
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Element Six Technologies Ltd
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Element Six Technologies Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/065—Presses for the formation of diamonds or boronitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/75—Cobalt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/74—Iron group metals
    • B01J23/755—Nickel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/889—Manganese, technetium or rhenium
    • B01J23/8892—Manganese
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/065—Presses for the formation of diamonds or boronitrides
    • B01J3/067—Presses using a plurality of pressing members working in different directions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/0625—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Catalysts (AREA)
CN201380022945.7A 2012-03-15 2013-03-13 制造合成单晶金刚石材料的方法 Active CN104271239B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1204533.2A GB201204533D0 (en) 2012-03-15 2012-03-15 Process for manufacturing synthetic single crystal diamond material
GB1204533.2 2012-03-15
PCT/EP2013/055173 WO2013135785A1 (en) 2012-03-15 2013-03-13 Process for manufacturing synthetic single crystal diamond material

Publications (2)

Publication Number Publication Date
CN104271239A CN104271239A (zh) 2015-01-07
CN104271239B true CN104271239B (zh) 2017-12-12

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Country Status (12)

Country Link
US (1) US10370773B2 (https=)
EP (1) EP2825306B1 (https=)
JP (1) JP5978496B2 (https=)
KR (1) KR101603032B1 (https=)
CN (1) CN104271239B (https=)
CA (1) CA2866758C (https=)
GB (2) GB201204533D0 (https=)
MY (1) MY172188A (https=)
RU (1) RU2580743C1 (https=)
SG (1) SG11201405679UA (https=)
WO (1) WO2013135785A1 (https=)
ZA (1) ZA201406629B (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201204533D0 (en) 2012-03-15 2012-04-25 Element Six Ltd Process for manufacturing synthetic single crystal diamond material
US10167569B2 (en) * 2012-08-16 2019-01-01 National University Corporation Ehime University Hexagonal diamond bulk sintered body and its manufacturing method
CN103949269A (zh) * 2014-05-14 2014-07-30 河南飞孟金刚石工业有限公司 一种多晶金刚石触媒及其热处理工艺
WO2016072211A1 (ja) * 2014-11-05 2016-05-12 日本軽金属株式会社 液冷ジャケットの製造方法及び液冷ジャケット
CN105126853B (zh) * 2015-07-31 2017-07-07 河南省亚龙金刚石制品有限公司 一种合成优质宝石级金刚石大单晶用触媒及其制备方法
CN105817181B (zh) * 2016-04-14 2019-02-26 湖北鄂信钻石科技股份有限公司 一种白色人造金刚石及制造方法
CN106400113A (zh) * 2016-09-12 2017-02-15 河南理工大学 一种人工合成大尺寸单晶金刚石片方法及合成组装块结构
DE102016011098A1 (de) * 2016-09-15 2018-03-15 H.C. Starck Tantalum and Niobium GmbH Verfahren zur Herstellung von elektronischen Bauteilen mittels 3D-Druck
ES2724214B2 (es) * 2018-03-01 2020-01-15 Business Res And Diamonds S L Procedimiento para la obtencion de diamantes sinteticos a partir de la sacarosa y equipo para llevar a cabo dicho procedimiento
CN109234793A (zh) * 2018-10-23 2019-01-18 营口鑫成达新型建材有限公司 一种合成单晶金刚石的方法
CN114364970B (zh) * 2019-08-05 2025-05-23 金展科技有限公司 用于钻石认证的系统和工艺
CN110983437B (zh) * 2019-12-26 2021-06-22 长沙新材料产业研究院有限公司 一种生产单晶金刚石的方法
CN111701535A (zh) * 2020-06-28 2020-09-25 安徽亚珠金刚石股份有限公司 一种人造金刚石合成装置与合成方法
RU2752346C1 (ru) * 2020-12-11 2021-07-26 Общество с ограниченной ответственностью "Научно-производственный комплекс "АЛМАЗ" Способ получения сверхтвёрдых материалов
CN112892411B (zh) * 2021-01-25 2022-05-31 四川大学 一种高温高压下生长大颗粒金刚石的方法
EP4215648A1 (fr) * 2022-01-25 2023-07-26 Aithra Procédé pour produire du diamant de synthèse
CN115007068B (zh) * 2022-06-17 2024-07-09 山东昌润钻石股份有限公司 一种八面体金刚石的合成方法
TWI840846B (zh) * 2022-06-21 2024-05-01 宋健民 一種單晶鑽石晶圓及單晶鑽石的製造方法
CN115198360B (zh) * 2022-07-27 2023-08-22 内蒙古科技大学 一种可控制备单晶金刚石纳米柱阵列簇的方法
CN115591476B (zh) * 2022-10-19 2025-09-23 齐鲁工业大学(山东省科学院) 一种蓝宝石优化处理方法
KR102951450B1 (ko) 2022-12-21 2026-04-13 일진다이아몬드(주) 초정밀 연삭용 다이아몬드 지립 및 그 제조방법
CN116492926B (zh) * 2023-03-23 2025-11-21 湖北科技学院 一种控制钻石生长速度的方法
CN117504721A (zh) * 2023-10-25 2024-02-06 开封贝斯科超硬材料有限公司 一种特殊晶型工业大单晶金刚石的制备方法
CN118664261A (zh) * 2024-07-03 2024-09-20 湖南坚利美超硬材料有限公司 一种金刚石内部流道加工方法及其设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0332353A2 (en) * 1988-03-08 1989-09-13 Sumitomo Electric Industries, Ltd. A method of synthesizing diamond
CN101657253A (zh) * 2007-03-08 2010-02-24 六号元素有限公司 大的单晶金刚石
WO2010082029A1 (en) * 2009-01-16 2010-07-22 Element Six Limited High pressure high temperature (hpht) method for the production of single crystal diamonds

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370095A (en) * 1976-12-03 1978-06-22 Ishizuka Kenkyusho Method of making diamond
JPS6035282B2 (ja) 1977-11-15 1985-08-14 株式会社東芝 ダイヤモンドの合成法
JPS59203717A (ja) 1983-04-28 1984-11-17 Toshiba Tungaloy Co Ltd ダイヤモンド結晶の製造方法
US4632817A (en) * 1984-04-04 1986-12-30 Sumitomo Electric Industries, Ltd. Method of synthesizing diamond
JPS6168395A (ja) 1984-09-13 1986-04-08 Showa Denko Kk ダイヤモンド結晶の成長法
US4547257A (en) 1984-09-25 1985-10-15 Showa Denko Kabushiki Kaisha Method for growing diamond crystals
JPS6384627A (ja) 1986-09-26 1988-04-15 Toshiba Tungaloy Co Ltd ダイヤモンド結晶の製造方法
ZA889314B (en) 1987-12-21 1990-02-28 De Beers Ind Diamond Diamond synthesis
US5273730A (en) * 1988-03-08 1993-12-28 Sumitomo Electric Industries, Ltd. Method of synthesizing diamond
SU1788700A1 (ru) * 1989-04-25 1996-02-20 Институт сверхтвердых материалов АН УССР Способ синтеза монокристаллов алмаза на затравке
JP2546558B2 (ja) 1991-07-22 1996-10-23 住友電気工業株式会社 ダイヤモンド砥粒の合成方法
JP3156326B2 (ja) * 1992-01-07 2001-04-16 富士通株式会社 半導体成長装置およびそれによる半導体成長方法
JP3452665B2 (ja) * 1994-11-22 2003-09-29 東京瓦斯株式会社 ダイヤモンド単結晶の合成方法及び単結晶ダイヤモンド
JPH08337498A (ja) 1995-04-13 1996-12-24 Sumitomo Electric Ind Ltd ダイヤモンド粒子、ダイヤモンド合成用粒子及び圧密体並びにそれらの製造方法
US7404857B2 (en) * 1997-04-04 2008-07-29 Chien-Min Sung Superabrasive particle synthesis with controlled placement of crystalline seeds
US7368013B2 (en) * 1997-04-04 2008-05-06 Chien-Min Sung Superabrasive particle synthesis with controlled placement of crystalline seeds
JP3660491B2 (ja) 1998-01-23 2005-06-15 昭和電工株式会社 超高圧製品の製造方法
US6627168B1 (en) 1999-10-01 2003-09-30 Showa Denko Kabushiki Kaisha Method for growing diamond and cubic boron nitride crystals
US7101433B2 (en) * 2002-12-18 2006-09-05 General Electric Company High pressure/high temperature apparatus with improved temperature control for crystal growth
US7128547B2 (en) * 2004-01-13 2006-10-31 Chien-Min Sung High pressure split die and associated methods
US20100028246A1 (en) * 2004-12-09 2010-02-04 Corina Vera Helga Stromann Synthesis of diamond
JP5254011B2 (ja) 2005-05-31 2013-08-07 エレメント シックス （プロダクション）（プロプライエタリィ） リミテッド ダイヤモンド種結晶を被覆する方法
GB201204533D0 (en) 2012-03-15 2012-04-25 Element Six Ltd Process for manufacturing synthetic single crystal diamond material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0332353A2 (en) * 1988-03-08 1989-09-13 Sumitomo Electric Industries, Ltd. A method of synthesizing diamond
CN101657253A (zh) * 2007-03-08 2010-02-24 六号元素有限公司 大的单晶金刚石
WO2010082029A1 (en) * 2009-01-16 2010-07-22 Element Six Limited High pressure high temperature (hpht) method for the production of single crystal diamonds

Also Published As

Publication number Publication date
JP2015511930A (ja) 2015-04-23
GB201304510D0 (en) 2013-04-24
KR20140138934A (ko) 2014-12-04
US20150027363A1 (en) 2015-01-29
GB2501808B (en) 2016-03-16
EP2825306B1 (en) 2017-02-01
MY172188A (en) 2019-11-15
RU2580743C1 (ru) 2016-04-10
CA2866758C (en) 2017-01-03
SG11201405679UA (en) 2014-11-27
WO2013135785A1 (en) 2013-09-19
JP5978496B2 (ja) 2016-08-24
CN104271239A (zh) 2015-01-07
KR101603032B1 (ko) 2016-03-11
GB2501808A (en) 2013-11-06
ZA201406629B (en) 2016-08-31
EP2825306A1 (en) 2015-01-21
CA2866758A1 (en) 2013-09-19
GB201204533D0 (en) 2012-04-25
US10370773B2 (en) 2019-08-06

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