CN104217994B - 一种薄膜晶体管阵列基板及其制备方法、显示装置 - Google Patents

一种薄膜晶体管阵列基板及其制备方法、显示装置 Download PDF

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CN104217994B
CN104217994B CN201410438315.4A CN201410438315A CN104217994B CN 104217994 B CN104217994 B CN 104217994B CN 201410438315 A CN201410438315 A CN 201410438315A CN 104217994 B CN104217994 B CN 104217994B
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CN104217994A (zh
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宁策
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BOE Technology Group Co Ltd
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Abstract

本发明提供一种薄膜晶体管阵列基板及其制备方法、显示装置，该方法包括：通过一次构图工艺在基板上形成包括公共电极、公共电极线、栅线和数据线的图形；形成绝缘层；通过一次构图工艺形成有源层的图形；形成栅绝缘层，并通过一次构图工艺在所述栅绝缘层上形成对应于所述栅线、数据线和有源层的过孔；通过一次构图工艺形成包括像素电极、栅极和源漏极的图形，所述栅极通过过孔与所述栅线电连接，所述数据线通过过孔电连接，所述源漏极通过过孔与所述有源层电连接。本发明的方法只需要四次构图工艺，就可以制备出包含顶栅型薄膜晶体管的阵列基板，简化了工艺，节省了成本。

Description

一种薄膜晶体管阵列基板及其制备方法、显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种薄膜晶体管(TFT)阵列基板及其制备方法、显示装置。
背景技术
高级超维场转换技术(ADvanced Super Dimension Switch，ADS)显示模式的液晶面板是通过同一平面内电极边缘所产生的电场以及电极层与板状电极层间产生的电场形成多维电场，使在电极之间和电极正上方的所有液晶分子发生旋转。ADS显示模式的液晶面板具有高画面品质、高分辨率、高透过率、低功耗、宽视角、高开口率、低色差、无水波纹(push Mura)等优点。
现有的ADS显示模式的薄膜晶体管阵列基板的制备方法构图工艺复杂，成本较大。
发明内容
有鉴于此，本发明提供一种薄膜晶体管阵列基板及其制备方法、显示装置，以解决现有的薄膜晶体管阵列基板的制备方法构图工艺复杂，成本高的问题。
为解决上述技术问题，本发明提供一种薄膜晶体管阵列基板的制备方法，包括：
通过一次构图工艺在基板上形成包括公共电极、公共电极线、栅线和数据线的图形，其中，所述公共电极线与所述公共电极连接，所述数据线在与所述栅线和所述公共电极线的交叉处断开；
在形成有所述公共电极、公共电极线、栅线和数据线的基板上，形成绝缘层；
通过一次构图工艺在形成有所述绝缘层的基板上形成有源层的图形；
在形成有所述有源层的基板上形成栅绝缘层，并通过一次构图工艺在所述栅绝缘层上形成对应于所述栅线的第一过孔、对应于所述数据线的第二过孔和对应于所述有源层的两第三过孔；
通过一次构图工艺在形成有所述栅绝缘层的基板上形成包括像素电极、栅极和源漏极的图形，所述栅极通过所述第一过孔与所述栅线电连接，所述数据线通过所述第二过孔电连接，并通过所述第二过孔与所述源极电连接，所述源极通过一所述第三过孔与所述有源层电连接，所述漏极通过另一所述第三过孔与所述有源层电连接。
优选地，通过一次构图工艺在基板上形成公共电极、公共电极线、栅线和数据线的图形的步骤包括：
在所述基板上依次形成第一透明导电薄膜和第一金属薄膜；
在所述第一金属薄膜上涂覆光刻胶；
采用灰色或半色调掩膜板对所述光刻胶进行曝光、显影，在所述基板上形成光刻胶全保留区域，光刻胶半保留区域以及光刻胶去除区域，其中，所述光刻胶全保留区域对应公共电极线、栅线和数据线图形区域，所述光刻胶半保留区域对应公共电极区域，所述光刻胶去除区域为除所述光刻胶全保留区域和所述光刻胶半保留区域之外的区域；
采用刻蚀工艺去除所述光刻胶去除区域的第一金属薄膜和第一透明导电薄膜；
利用灰化工艺去除所述光刻胶半保留区域的光刻胶；
利用刻蚀工艺去除所述光刻胶半保留区域的第一金属薄膜，形成公共电极的图形；
剥离所述光刻胶完全保留区域的光刻胶，露出所述公共电极线、栅线和数据线的图形，其中，所述公共电极线与所述公共电极连接，所述数据线在与所述栅线和所述公共电极线交叉的位置处断开。
优选地，所述第一金属为铜基金属。
优选地，所述铜基金属为铜、铜钼合金、铜钛合金、铜钼钨合金、铜钼铌合金或铜钼钛合金。
优选地，通过一次构图工艺在形成有所述栅绝缘层的基板上形成像素电极、栅极和源漏极的步骤包括：
在形成有所述栅绝缘层的基板上依次形成第二透明导电薄膜和第二金属薄膜；
在所述第二金属薄膜上涂覆光刻胶；
采用灰色或半色调掩膜板对所述光刻胶进行曝光、显影，在所述基板上形成光刻胶全保留区域，光刻胶半保留区域以及光刻胶去除区域，其中，所述光刻胶全保留区域对应栅极、源漏极和数据线连接部图形区域，所述光刻胶半保留区域对应像素电极图形区域，所述光刻胶去除区域为除所述光刻胶全保留区域和所述光刻胶半保留区域之外的区域；
采用刻蚀工艺去除所述光刻胶去除区域的第二金属薄膜和第二透明导电薄膜；
利用灰化工艺去除所述光刻胶半保留区域的光刻胶；
利用刻蚀工艺去除所述光刻胶半保留区域的第二金属薄膜，形成像素电极的图形；
剥离所述光刻胶完全保留区域的光刻胶，露出所述栅极、源漏极和数据线连接部的图形，其中，所述栅极通过所述第一过孔与所述栅线电连接，所述数据线连接部通过所述第二过孔将断开的数据线连接起来，所述源漏极通过所述第三过孔与所述有源层电连接。
本发明还提供一种薄膜晶体管阵列基板，包括：
基板；
公共电极，位于所述基板上；
同层设置的公共电极线、栅线和数据线，所述公共电极线设置于所述公共电极上，所述数据线在与所述栅线和所述公共电极线的交叉处断开；
第一透明导电薄膜保留部，位于所述栅线、数据线与所述基板之间，与所述公共电极同层同材料设置；
绝缘层，覆盖所述公共电极、公共电极线、栅线和数据线；
有源层，位于所述绝缘层上；
栅绝缘层，覆盖所述有源层，所述栅绝缘层上开设有对应所述栅线的第一过孔、对应所述数据线的第二过孔和对应所述有源层的两第三过孔；
像素电极，位于所述栅绝缘层上；
同层设置的栅极、源漏极和数据线连接部，其中，所述数据线通过所述数据线连接部并借助所述第二过孔连接起来，并借助所述第二过孔与所述源极连接；
第二透明导电薄膜保留部，位于所述栅极、源漏极、所述数据线连接部与所述栅绝缘层之间，与所述像素电极同层同材料设置，所述栅极通过位于其下的第二透明导电薄膜保留部并借助所述第一过孔与所述栅线电连接，所述源极通过位于其下的第二透明导电薄膜保留部并借助一所述第三过孔与所述有源层电连接，所述漏极通过位于其下的第二透明导电薄膜保留部并借助另一所述第三过孔与所述有源层电连接。
优选地，所述公共电极线、栅线和数据线采用铜基金属制成。
优选地，所述铜基金属为铜、铜钼合金、铜钛合金、铜钼钨合金、铜钼铌合金或铜钼钛合金。
本发明还提供一种显示装置，包括上述薄膜晶体管阵列基板。
本发明的上述技术方案的有益效果如下：
只需要四次构图工艺，就可以制备出包含顶栅型薄膜晶体管的阵列基板，简化了工艺，节省了成本。
采用Cu基金属作为导线，提高了良率，解决了Cu扩散对TFT性能的影响。
附图说明
图1-1至图5-2为本发明实施例的薄膜晶体管阵列基板的制备方法示意图；
图6-1至图6-7为本发明实施例的公共电极、公共电极线、栅线和数据线的制备方法示意图；
图7-1至7-7为本发明实施例的像素电极、栅极、源极和漏极的制备方法示意图；
图8为本发明实施例的薄膜晶体管阵列基板的结构示意图。
具体实施方式
为使本发明要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
本发明实施例提供一种薄膜晶体管阵列基板的制备方法，所述方法用于制备包含顶栅型薄膜晶体管的阵列基板，所述方法包括以下步骤：
步骤S1：请参考图1-1和图1-2，通过一次构图工艺在基板101上形成包括公共电极102、公共电极线103、栅线104和数据线105的图形，其中，所述公共电极线103与所述公共电极102连接，所述数据线105在与所述栅线104和所述公共电极线103的交叉处断开；所述基板101可以仅包括衬底基板，也可以包括衬底基板和其他层(如缓冲层)，所述衬底基板可以为玻璃基板。
步骤S2：请参考图2，在形成有所述公共电极102、公共电极线103、栅线104和数据线105的基板101上，形成绝缘层106；
所述绝缘层106的厚度可以为200-400nm。所述绝缘层106可以为SiNx、SiO2或复合层结构。
步骤S3：请参考图3-1和3-2，通过一次构图工艺在形成有所述绝缘层106的基板101上形成有源层107的图形；
所述有源层107的厚度可以为30nm-50nm，其可以为氧化物如IGZO、ZnO、InO、ITZO或IAZO等，也可以为a-Si。
步骤S4：请参考图4-1和4-2，在形成有所述有源层107的基板101上形成栅绝缘层108，并通过一次构图工艺在所述栅绝缘层108上形成对应于所述栅线104的一第一过孔109、对应于所述数据线105的多个第二过孔110和对应于所述有源层107的两第三过孔111；
所述栅绝缘层108可以利用PECVD沉积而成，其厚度可以为200-400nm。
步骤S5：请参考图5-1和5-2，通过一次构图工艺在形成有所述栅绝缘层108的基板上形成包括像素电极112、栅极113、源极114和漏极115的图形，所述栅极113通过所述第一过孔109与所述栅线104电连接，属于同一条数据线105的多段数据线通过所述第二过孔110电连接，以形成一条完整的数据线，同时，所述数据线105还通过其中一个第二过孔110与所述源极114电连接，所述源极114通过一所述第三过孔111与所述有源层107电连接，所述漏极115通过另一所述第三过孔111与所述有源层107电连接。
上述实施例提供的薄膜晶体管阵列基板的制备方法，只需要四次构图工艺，就可以制备出包含顶栅型薄膜晶体管的阵列基板，简化了工艺，节省了成本。
上述步骤S1中，通过一次构图工艺在基板101上形成公共电极102、公共电极线103、栅线104和数据线105的图形的步骤可以包括：
步骤S11：请参考图6-1，在基板101上依次形成第一透明导电薄膜201和第一金属薄膜202；
具体的，第一透明导电薄膜201可以采用ITO、IZO或AZO等金属氧化物制备，可以利用磁控溅射沉积形成，其厚度可以为30-50nm(纳米)。另外，可以利用磁控溅射沉积第一金属薄膜202，第一金属薄膜202的厚度可以为200-400nm。
步骤S12：请参考图6-2，在所述第一金属薄膜202上涂覆光刻胶203；
步骤S13：请参考图6-3，采用灰色或半色调掩膜板对所述光刻胶203进行曝光、显影，在所述基板101上形成光刻胶全保留区域301，光刻胶半保留区域302以及光刻胶去除区域303，其中，所述光刻胶全保留区域301对应公共电极线103、栅线104和数据线105图形区域，所述光刻胶半保留区域302对应公共电极102区域，所述光刻胶去除区域303为除所述光刻胶全保留区域301和所述光刻胶半保留区域302之外的区域；
步骤S14：请参考图6-4，采用刻蚀工艺去除所述光刻胶去除区域303的第一金属薄膜202和第一透明导电薄膜201；
该步骤中，可以采用湿法刻蚀工艺。
步骤S15：请参考图6-5，利用灰化工艺去除所述光刻胶半保留区域302的光刻胶203；
步骤S16：请参考图6-6，利用刻蚀工艺去除所述光刻胶半保留区域302的第一金属薄膜202，形成公共电极102的图形；
该步骤中，可以采用湿法刻蚀工艺。
步骤S17：请参考图6-7，剥离所述光刻胶完全保留区域301的光刻胶203，露出所述公共电极线103、栅线104和数据线105的图形，其中，所述公共电极线103与所述公共电极102连接，所述数据线105在与所述栅线104和所述公共电极线103交叉的位置处断开。
上述实施例中，所述第一金属可以为Cu(铜)基金属。所述Cu基金属为铜、铜钼合金(Cu/Mo)、铜钛合金(Cu/Ti)、铜钼钨合金(Cu/MO/W)、铜钼铌合金(Cu/MO/Nb)或铜钼钛合金(Cu/MO/ti)等。
Cu基金属具有电阻低的特点，因而可以提高公共电极线103、栅线104和数据线105的信号传输速率，提高显示质量。且，形成的薄膜晶体管阵列基板中，在有源层107上下均不存在Cu基金属电极，避免了Cu扩散带来的影响。
上述方法在形成公共电极线103、栅线104和数据线105的过程中，只需对Cu基金属薄膜执行一次刻蚀，减小了刻蚀带来的不良。
上述步骤S5中，通过一次构图工艺在形成有所述栅绝缘层108的基板上形成像素电极112、栅极113、源极114和漏极115步骤可以包括：
步骤S51：请参考附图7-1，在形成有所述栅绝缘层108的基板101上依次形成第二透明导电薄膜401和第二金属薄膜402；
具体的，第二透明导电薄膜401可以采用ITO、IZO或AZO等金属氧化物制备，利用磁控溅射沉积而成，其厚度可以为30-50nm，所述第二金属薄膜402的厚度可以为200-300nm。所述第二金属薄膜402可以采用Al，Mo，W等性能稳定的金属制备。
步骤S52：请参考附图7-2，在所述第二金属薄膜402上涂覆光刻胶403；
步骤S53：请参考附图7-3，采用灰色或半色调掩膜板对所述光刻胶403进行曝光、显影，在所述基板101上形成光刻胶全保留区域501，光刻胶半保留区域502以及光刻胶去除区域503，其中，所述光刻胶全保留区域501对应栅极113、源极114、漏极115和数据线连接部图形区域，所述光刻胶半保留区域502对应像素电极112图形区域，所述光刻胶去除区域503为除所述光刻胶全保留区域501和所述光刻胶半保留区域502之外的区域；
步骤S54：请参考附图7-4，采用刻蚀工艺去除所述光刻胶去除区域503的第二金属薄膜402和第二透明导电薄膜401；
步骤S55：请参考附图7-5，利用灰化工艺去除所述光刻胶半保留区域502的光刻胶403；
步骤S56：请参考附图7-6，利用刻蚀工艺去除所述光刻胶半保留区域502的第二金属薄膜402，形成像素电极112的图形；
步骤S57：请参考附图7-7和图5-2，剥离所述光刻胶完全保留区域501的光刻胶403，露出所述栅极113、源极114、漏极115和数据线连接部116的图形，其中，所述栅极113通过所述第一过孔109与所述栅线104电连接，所述源极114通过一所述第三过孔111与所述有源层107电连接，所述漏极115通过另一所述第三过孔111与所述有源层107电连接，所述数据线连接部116通过所述第二过孔110将属于同一条数据线105的各段数据线连接起来。
本发明实施例中，数据线连接部116由透明导电薄膜和金属薄膜两层构成，当然，在本发明的其他实施例中，数据线连接部116还可以仅由透明导电薄膜构成，此时，步骤S53中，形成的所述光刻胶全保留区域501对应栅极113、源极114和漏极115图形区域，所述光刻胶半保留区域502对应像素电极112和数据线连接部图形区域。
上述实施例中，透明金属氧化物可以为ITO、IZO等。
请参考图5-2和图8，本发明实施例还提供一种薄膜晶体管阵列基板，包括：
基板101；
公共电极102，位于所述基板101上；
同层设置的公共电极线103、栅线104和数据线105，所述公共电极线103设置于所述公共电极102上，所述数据线105在与所述栅线104和所述公共电极线103的交叉处断开；
第一透明导电薄膜保留部1021，位于所述栅线104、数据线405与所述基板101之间，与所述公共电极102同层同材料设置；
绝缘层106，覆盖所述公共电极102、公共电极线103、栅线104和数据线105；
有源层107，位于所述绝缘层106上；
栅绝缘层108，覆盖所述有源层107，所述栅绝缘层上108开设有对应所述栅线104的一第一过孔、对应所述数据线105的多个第二过孔和对应所述有源层107的两第三过孔；
像素电极112，位于所述栅绝缘层108上；
同层设置的栅极113、源极114、漏极115和数据线连接部116，其中，数据线105通过所述数据线连接部116并借助所述第二过孔连接起来；
第二透明导电薄膜保留部1121，位于所述栅极113、源极114、漏极115、所述数据线连接部116与所述栅绝缘层108之间，与所述像素电极112同层同材料设置，所述栅极113通过位于其下的第二透明导电薄膜保留部1121和所述第一过孔与所述栅线104电连接，所述源极114通过位于其下的第二透明导电薄膜保留部1121并借助一所述第三过孔与所述有源层107电连接，所述漏极115通过位于其下的第二透明导电薄膜保留部1121并借助另一所述第三过孔与所述有源层107电连接。
优选地，公共电极线103、栅线104和数据线105采用铜基金属制成。所述铜基金属可以为铜、铜钼合金、铜钛合金、铜钼钨合金、铜钼铌合金或铜钼钛合金。Cu基金属具有电阻低的特点，因而可以提高公共电极线103、栅线104和数据线105的信号传输速率，提高显示质量。且，形成的薄膜晶体管阵列基板中，在有源层107上下均不存在Cu基金属电极，避免了Cu扩散带来的影响。
本发明实施例还提供一种显示装置，包括上述薄膜晶体管阵列基板。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (9)

1.一种薄膜晶体管阵列基板的制备方法，其特征在于，包括：
通过一次构图工艺在基板上形成包括公共电极、公共电极线、栅线和数据线的图形，其中，所述公共电极线与所述公共电极连接，所述数据线在与所述栅线和所述公共电极线的分别交叉处断开；
在形成有所述公共电极、公共电极线、栅线和数据线的基板上，形成绝缘层；
通过一次构图工艺在形成有所述绝缘层的基板上形成有源层的图形；
在形成有所述有源层的基板上形成栅绝缘层，并通过一次构图工艺在所述栅绝缘层上形成对应于所述栅线的第一过孔、对应于所述数据线的第二过孔和对应于所述有源层的两第三过孔；
通过一次构图工艺在形成有所述栅绝缘层的基板上形成包括像素电极、栅极和源漏极的图形，所述栅极通过所述第一过孔与所述栅线电连接，所述数据线通过所述第二过孔电连接，并通过所述第二过孔与所述源极电连接，所述源极通过一所述第三过孔与所述有源层电连接，所述漏极通过另一所述第三过孔与所述有源层电连接。
2.根据权利要求1所述的制备方法，其特征在于，通过一次构图工艺在基板上形成公共电极、公共电极线、栅线和数据线的图形的步骤包括：
在所述基板上依次形成第一透明导电薄膜和第一金属薄膜；
在所述第一金属薄膜上涂覆光刻胶；
采用灰色或半色调掩膜板对所述光刻胶进行曝光、显影，在所述基板上形成光刻胶全保留区域，光刻胶半保留区域以及光刻胶去除区域，其中，所述光刻胶全保留区域对应公共电极线、栅线和数据线图形区域，所述光刻胶半保留区域对应公共电极区域，所述光刻胶去除区域为除所述光刻胶全保留区域和所述光刻胶半保留区域之外的区域；
采用刻蚀工艺去除所述光刻胶去除区域的第一金属薄膜和第一透明导电薄膜；
利用灰化工艺去除所述光刻胶半保留区域的光刻胶；
利用刻蚀工艺去除所述光刻胶半保留区域的第一金属薄膜，形成公共电极的图形；
剥离所述光刻胶完全保留区域的光刻胶，露出所述公共电极线、栅线和数据线的图形，其中，所述公共电极线与所述公共电极连接，所述数据线在与所述栅线和所述公共电极线分别交叉的位置处断开。
3.根据权利要求2所述的制备方法，其特征在于，所述第一金属为铜基金属。
4.根据权利要求3所述的制备方法，其特征在于，所述铜基金属为铜、铜钼合金、铜钛合金、铜钼钨合金、铜钼铌合金或铜钼钛合金。
5.根据权利要求1所述的制备方法，其特征在于，通过一次构图工艺在形成有所述栅绝缘层的基板上形成像素电极、栅极和源漏极的步骤包括：
在形成有所述栅绝缘层的基板上依次形成第二透明导电薄膜和第二金属薄膜；
在所述第二金属薄膜上涂覆光刻胶；
采用灰色或半色调掩膜板对所述光刻胶进行曝光、显影，在所述基板上形成光刻胶全保留区域，光刻胶半保留区域以及光刻胶去除区域，其中，所述光刻胶全保留区域对应栅极、源漏极和数据线连接部图形区域，所述光刻胶半保留区域对应像素电极图形区域，所述光刻胶去除区域为除所述光刻胶全保留区域和所述光刻胶半保留区域之外的区域；
采用刻蚀工艺去除所述光刻胶去除区域的第二金属薄膜和第二透明导电薄膜；
利用灰化工艺去除所述光刻胶半保留区域的光刻胶；
利用刻蚀工艺去除所述光刻胶半保留区域的第二金属薄膜，形成像素电极的图形；
剥离所述光刻胶完全保留区域的光刻胶，露出所述栅极、源漏极和数据线连接部的图形，其中，所述栅极通过所述第一过孔与所述栅线电连接，所述数据线连接部通过所述第二过孔将断开的数据线连接起来，所述源漏极通过所述第三过孔与所述有源层电连接。
6.一种薄膜晶体管阵列基板，其特征在于，包括：
基板；
公共电极，位于所述基板上；
同层设置的公共电极线、栅线和数据线，所述公共电极线设置于所述公共电极上，所述数据线在与所述栅线和所述公共电极线的分别交叉处断开；
第一透明导电薄膜保留部，位于所述栅线、数据线与所述基板之间，与所述公共电极同层同材料设置；
绝缘层，覆盖所述公共电极、公共电极线、栅线和数据线；
有源层，位于所述绝缘层上；
栅绝缘层，覆盖所述有源层，所述栅绝缘层上开设有对应所述栅线的第一过孔、对应所述数据线的第二过孔和对应所述有源层的两第三过孔；
像素电极，位于所述栅绝缘层上；
同层设置的栅极、源漏极和数据线连接部，其中，所述数据线通过所述数据线连接部并借助所述第二过孔连接起来，并借助所述第二过孔与所述源极连接；
第二透明导电薄膜保留部，位于所述栅极、源漏极、所述数据线连接部与所述栅绝缘层之间，与所述像素电极同层同材料设置，所述栅极通过位于其下的第二透明导电薄膜保留部并借助所述第一过孔与所述栅线电连接，所述源极通过位于其下的第二透明导电薄膜保留部并借助一所述第三过孔与所述有源层电连接，所述漏极通过位于其下的第二透明导电薄膜保留部并借助另一所述第三过孔与所述有源层电连接。
7.根据权利要求6所述的薄膜晶体管阵列基板，其特征在于，所述公共电极线、栅线和数据线采用铜基金属制成。
8.根据权利要求7所述的薄膜晶体管阵列基板，其特征在于，所述铜基金属为铜、铜钼合金、铜钛合金、铜钼钨合金、铜钼铌合金或铜钼钛合金。
9.一种显示装置，其特征在于，包括权利要求6-8任一项所述的薄膜晶体管阵列基板。
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