CN104093784B - 低介电可光致成像组合物以及由其制得的电子器件 - Google Patents

低介电可光致成像组合物以及由其制得的电子器件 Download PDF

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Publication number
CN104093784B
CN104093784B CN201380006618.2A CN201380006618A CN104093784B CN 104093784 B CN104093784 B CN 104093784B CN 201380006618 A CN201380006618 A CN 201380006618A CN 104093784 B CN104093784 B CN 104093784B
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composition
polymer
group
substituted
coating
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Chinese (zh)
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CN104093784A (zh
Inventor
张汝志
金志勋
B·K·帕泰尔
E·沃尔佛
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Wisdom Buy
Merck Patent GmbH
AZ Electronic Materials (Japan) Co Ltd
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AZ Electronic Materials (Luxembourg) SARL
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
CN201380006618.2A 2012-02-09 2013-02-08 低介电可光致成像组合物以及由其制得的电子器件 Active CN104093784B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/369,809 2012-02-09
US13/369,809 US8871425B2 (en) 2012-02-09 2012-02-09 Low dielectric photoimageable compositions and electronic devices made therefrom
PCT/IB2013/000170 WO2013117989A1 (en) 2012-02-09 2013-02-08 Low dielectric photoimageable compositions and electronic devices made therefrom

Publications (2)

Publication Number Publication Date
CN104093784A CN104093784A (zh) 2014-10-08
CN104093784B true CN104093784B (zh) 2016-09-21

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CN201380006618.2A Active CN104093784B (zh) 2012-02-09 2013-02-08 低介电可光致成像组合物以及由其制得的电子器件

Country Status (9)

Country Link
US (1) US8871425B2 (enExample)
EP (1) EP2812399B1 (enExample)
JP (1) JP5941559B2 (enExample)
KR (1) KR101904582B1 (enExample)
CN (1) CN104093784B (enExample)
PH (1) PH12014501731A1 (enExample)
SG (1) SG11201403059WA (enExample)
TW (1) TWI544280B (enExample)
WO (1) WO2013117989A1 (enExample)

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JP6213270B2 (ja) * 2014-01-31 2017-10-18 住友化学株式会社 Ｕｖ−ｌｅｄ用ポリシルセスキオキサン系封止材組成物及びそのための溶媒の使用
CN104282250B (zh) * 2014-10-24 2016-08-31 深圳市华星光电技术有限公司 Tft 中mis 结构设计的控制方法及系统
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US10254650B2 (en) 2016-06-29 2019-04-09 Honeywell International Inc. Low temperature SC1 strippable oxysilane-containing coatings
US20190211259A1 (en) 2016-08-22 2019-07-11 Merck Patent Gmbh Mixture for optical devices
US20210292644A1 (en) 2016-09-13 2021-09-23 Merck Patent Gmbh Light luminescent particle
US10544330B2 (en) * 2017-01-20 2020-01-28 Honeywell International Inc. Gap filling dielectric materials
JP2021005625A (ja) * 2019-06-26 2021-01-14 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ゲート絶縁膜形成組成物

Citations (1)

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Publication number Priority date Publication date Assignee Title
EP1978572A2 (en) * 2007-04-02 2008-10-08 Xerox Corporation Phase-separated dielectric structure fabrication process

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US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
JPH06148895A (ja) 1992-11-06 1994-05-27 Toray Ind Inc 感光性樹脂組成物およびこれを用いたパターン形成方法
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
US5962067A (en) * 1997-09-09 1999-10-05 Lucent Technologies Inc. Method for coating an article with a ladder siloxane polymer and coated article
TW588072B (en) 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
JP2004165613A (ja) * 2002-06-03 2004-06-10 Shipley Co Llc 電子デバイスの製造
US7041748B2 (en) * 2003-01-08 2006-05-09 International Business Machines Corporation Patternable low dielectric constant materials and their use in ULSI interconnection
JP5102428B2 (ja) * 2003-11-25 2012-12-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 導波路組成物およびこれから形成された導波路
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Also Published As

Publication number Publication date
JP5941559B2 (ja) 2016-06-29
US8871425B2 (en) 2014-10-28
WO2013117989A1 (en) 2013-08-15
KR101904582B1 (ko) 2018-10-04
EP2812399A1 (en) 2014-12-17
TW201341963A (zh) 2013-10-16
JP2015508184A (ja) 2015-03-16
CN104093784A (zh) 2014-10-08
KR20140117391A (ko) 2014-10-07
PH12014501731B1 (en) 2014-11-17
EP2812399B1 (en) 2016-04-20
SG11201403059WA (en) 2014-07-30
US20130209754A1 (en) 2013-08-15
TWI544280B (zh) 2016-08-01
PH12014501731A1 (en) 2014-11-17

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Address after: Luxemburg L-1648 II 46 square,

Patentee after: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.

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