CN107251203A - 金属硬掩模组合物和用于在半导体基底上形成精细图案的方法 - Google Patents
金属硬掩模组合物和用于在半导体基底上形成精细图案的方法 Download PDFInfo
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- CN107251203A CN107251203A CN201680009834.6A CN201680009834A CN107251203A CN 107251203 A CN107251203 A CN 107251203A CN 201680009834 A CN201680009834 A CN 201680009834A CN 107251203 A CN107251203 A CN 107251203A
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- alkyl
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- 239000002184 metal Substances 0.000 title claims description 29
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- 239000002904 solvent Substances 0.000 claims abstract description 38
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- 239000003446 ligand Substances 0.000 claims abstract description 21
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- 125000005418 aryl aryl group Chemical group 0.000 claims description 19
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Abstract
本发明涉及具有改进的稳定性的新的组合物，其包含可溶性多配体取代的金属化合物、多元醇化合物和溶剂，其用于将材料填充在具有微光刻特征的良好沟槽或通孔填充特性的光致抗蚀剂图案上，其中填充图案在基于氧的等离子体中具有良好的耐等离子体蚀刻性，并且用作在半导体基底上形成精细图案中的硬掩模，所述精细图案通过该硬掩模的图案转移形成。本发明还涉及在用于制造电子器件的方法中使用该组合物。
Description
发明领域
本发明涉及包含多元醇添加剂和可溶性多配体取代的金属化合物的组合物，其用作金属硬掩模，其显示对于沟槽或通孔(via)微光刻特征的改进的空隙填充能力，以及在基于氧的等离子体中的良好的耐等离子体蚀刻性；这些组合物用于通过硬掩模的图案转移在半导体基底上形成精细图案中的方法。
背景
金属氧化物膜可用于半导体工业中的各种应用，例如光刻硬掩模、用于抗反射涂层的底层和电光器件。
作为实例，光致抗蚀剂组合物用于微光刻工艺中，用于制造小型化的电子部件，例如用于计算机芯片和集成电路的制造中。通常，将光致抗蚀剂组合物的薄涂层施加到基底，如用于制造集成电路的硅晶片。然后烘烤涂覆的基底以从光致抗蚀剂中去除希望量的溶剂。然后将基底上的光致抗蚀剂膜成影像地暴露于光化辐射，例如可见光、紫外线、极紫外线、电子束、粒子束和X射线辐射，并显影以形成图案。辐射引起光致抗蚀剂的暴露区域中的化学转化。用显影剂溶液处理暴露的涂层以溶解和去除光致抗蚀剂的暴露于辐射或未暴露于辐射的区域。
半导体器件小型化的趋势导致对越来越短的辐射波长敏感的新光致抗蚀剂的使用，并且还导致复杂的多级系统的使用，以克服与这种小型化有关的困难。
光刻中的吸收抗反射涂层和底层被用于减少由通常高反射性的基底反射的辐射引起的问题。反射的辐射导致薄膜干涉效应和反射性刻痕。当光致抗蚀剂的厚度变化时，薄膜干涉或驻波导致光致抗蚀剂膜中总光强度变化引起的临界线宽度尺寸的变化。反射和入射曝光辐射的干扰可以引起驻波效应，其使得贯穿厚度的辐射的均匀性变形。光致抗蚀剂在包含形貌特征的反射基底上图案化时，反射性刻痕变得严重，所述形貌特征通过光致抗蚀剂膜散射光，导致线宽变化，并且在极端情况下，形成希望的尺寸完全损失的区域。涂覆在光致抗蚀剂下方和反射基底上方的抗反射涂层膜为光致抗蚀剂的光刻性能提供显著的改进。通常，将底部抗反射涂层施加在基底上并固化，然后施加一层光致抗蚀剂。光致抗蚀剂成影像地曝光和显影。然后通常使用各种蚀刻气体对暴露区域中的抗反射涂层进行干蚀刻，从而将光致抗蚀剂图案转移到基底。
含有大量耐熔元素的底层可用作硬掩模以及抗反射涂层。当上覆的光致抗蚀剂不能提供对用于将图像转移到下面的半导体基底中的干蚀刻的足够高的耐受性时，硬掩模是有用的。在这种情况下，使用称为硬掩模的材料，其耐蚀刻性足够高以将在其上产生的任何图案转移到下面的半导体基底中。这因为有机光致抗蚀剂不同于下面的硬掩模而成为可能，并且可以找到允许将光致抗蚀剂中的图像转移到下面的硬掩模中的蚀刻气体混合物。然后，该图案化的硬掩模可以与适宜的蚀刻条件和气体混合物一起使用，以将图像从硬掩模转移到半导体基底中，这是光致抗蚀剂本身用单一蚀刻法无法实现的任务。
在新的光刻技术中使用了多个抗反射层和底层。在光致抗蚀剂不能提供足够的抗干蚀刻性的情况下，优选充当硬掩模并且在基底蚀刻期间具有高耐蚀刻性的光致抗蚀剂的底层和/或抗反射涂层。一种方法是将硅、钛或其它金属材料掺入有机光致抗蚀剂层下面的层中。此外，另一种高碳含量抗反射或掩模层可以放置在含金属抗反射层的下面，例如使用高碳膜/硬掩模膜/光致抗蚀剂的三层来改进成像过程的光刻性能。常规的硬掩模可以通过化学气相沉积，如溅射来施加。然而，旋涂相对于上述常规方法的相对简单性使得开发在膜中具有高浓度金属材料的新的旋涂硬掩模或抗反射涂层非常理想。
已经显示含有金属氧化物的半导体应用的底层组合物提供耐干蚀刻性以及抗反射特性。然而，已经发现，形成金属氧化物膜的常规可溶性金属化合物例如金属醇盐对空气中的水分非常不稳定，从而产生各种问题，包括货架期稳定性、涂层问题和性能缺点。金属氧化物在半导体工业中通常使用并被接受的溶剂中具有溶解度问题。因此，非常需要制备旋涂硬掩模，以及含有在暴露于空气后稳定的有机溶剂可溶性金属化合物的其他底层。还需要这样的底层制剂，其可以另外充当显示非常低的空隙形成的良好的通孔和沟槽填充材料，这可以用本发明的组合物来实现。然后可以使用具有低空隙形成的这种填充的光刻特征作为负色调硬掩模，以在等离子体蚀刻之后产生原始光致抗蚀剂图案的反色调图像。当图案化基底是电子器件的部分时，新的组合物可以供选择地用作填充材料，其在膜固化之后在化学溶液中部分剥离以形成金属氧化物。然后，特征中剩余的金属氧化物膜可以用作栅极电介质的高K(电介质)材料，以改善电流泄漏。通常这些材料总是使用昂贵且需要专门设备的CVD(化学气相沉积)工艺进行沉积。在任一应用中，金属氧化物硬掩模材料在固化后在化学溶液中可剥离。化学剥离剂可以是酸性或碱性水溶液，例如SC1(H2O:H2O2:NH4OH＝20:4:1)、Piranha(H2SO4:30％H2O2＝2:3)、稀HF、NH4F、磷酸、300MIF显影剂或简单地溶剂或溶剂混合物。
发明内容
本发明涉及新的组合物，其包含可溶性多配体取代的金属化合物、多元醇化合物和溶剂。
本发明涉及一种组合物，其包含：
a)结构(I)的可溶性多配体取代的金属化合物
其中M为(4)价金属，n为1至20，并且其中R1、R2、R3和R4是独立地选自1)、2)、3)或其混合物的部分，其中
1)是有机部分(II)，
其中R8选自C2-C10亚烷基、C3-C12支链亚烷基、C5-C12亚环烷基、包含C＝C双键的C2-C10亚烷基、包含C＝C双键的C3-C12支链亚烷基和包含C＝C双键的C5-C12亚环烷基，并且另外，其中R9为氢或烷氧基羰基部分(IV)，其中R10为C1-C8烷基，
2)是具有结构(III)的具有至少2个碳的含硅有机部分
其中R5和R6独立地选自C1-C8烷基、C3-C12支链烷基或芳基，
R7独立地选自C1-C8烷基、芳基、羟基或结构(V)的硅氧烷，其中R11为氢、C1-C8烷基部分、被羟基取代的C1-C8烷基部分或芳基部分，并且R12和R13独立地选自C1-C8烷基部分、C3-C12支链烷基部分或芳基部分，并且其中p表示硅氧烷部分(V)中的重复单元数；和
3)是选自以下的有机部分：C2-C8烷基、C6-C16芳基或取代芳基、C2-C8烷基羧基、C6-C16芳基或取代芳基羧基、氟化C2-C8烷基羧基、氟化C6-C16芳基或取代芳基羧基、C2-C8烷基磺酰基、C6-C16芳基或取代芳基磺酰基、氟化C2-C8烷基磺酰基、氟化C6-C16芳基或取代芳基磺酰基及其混合物；
b)具有结构(VI)的多元醇化合物
其中X为C或N，其中r为至少2并且q在0-2范围内，并且其中当X为C时，q和r之和为4，以及当X为N时，q和r之和为3，并且另外其中R14为氢、C1至C8烷基部分或C2至C8羟基亚烷基部分；并且当X为N时，Y为C2-C8亚烷基部分；当X为C时，Y独立地选自直接价键、C2-C8亚烷基部分或包含具有结构(VII)的烷氧基亚烷基链的部分，其中R15为C2至C8亚烷基部分，t为0至2并且t’为1至2；
和
c)溶剂。
本发明还涉及在用于制造电子器件的方法中使用新的组合物。本发明还涉及使用这些新的组合物来涂覆图案化的光致抗蚀剂以形成具有低空隙形成的填充的光致抗蚀剂图案，以及使用这些填充的光致抗蚀剂图案作为负色调硬掩模，其中使用适宜的等离子体如氧等离子体去除光致抗蚀剂的未填充区域，以影响图像色调反转。本发明还涉及使用剥离剂去除所述组合物。
详述
如本文所使用的，连词“和”旨在是包括性的，并且连词“或”不旨在具有排他性，除非另有说明。例如，短语“或，供选择地”旨在具有排他性。
如本文所使用的，术语“和/或”是指包括使用单一元素的前述元素的任何组合。
如本文所使用的，术语“烷基”是指直链或环状链烷基取代基以及其支链异构体中的任一种。
如本文所使用的，术语“亚烷基”是指具有通式–CH2-(CH2)n-CH2-的直链二官能化亚烷基取代基。
如本文所使用的，术语“支链亚烷基”是指存在烷基取代基的亚烷基取代基。
如本文所使用的，术语“环状亚烷基”是指含有环状烃的二取代烃部分，连接点可以在环状烃本身上或环状烃上的侧链烃取代基上。
如本文所使用的，术语“芳基”是指衍生自芳环的任何官能团或取代基，例如苯基、萘基、噻吩基、吲哚基等。
如本文所使用的，术语“二酮”是指具有两个酮基的任何溶剂，非限制性实例是丁二酮、乙酰丙酮和己烷-2,5-二酮。
如本文所使用的，术语“基于硅的聚合物”是指硅聚合物以及有机硅聚合物，并且包括低聚物材料，例如二聚物、三聚物等。
如本文所使用的，术语“组合物”和“制剂”可互换使用并且意味着相同事物。
本发明涉及包含可溶性多配体取代的金属化合物、多元醇化合物和溶剂的新的组合物。
本发明涉及一种组合物，其包含：
a)结构(I)的可溶性多配体取代的金属化合物
其中M为(4)价金属，n为1至20，并且其中R1、R2、R3和R4是独立地选自1)、2)、3)或其混合物的部分，其中
1)是有机部分(II)，
其中R8选自C2-C10亚烷基、C3-C12支链亚烷基、C5-C12亚环烷基、包含C＝C双键的C2-C10亚烷基、包含C＝C双键的C3-C12支链亚烷基和包含C＝C双键的C5-C12亚环烷基，并且另外，其中R9为氢或烷氧基羰基部分(IV)，其中R10为C1-C8烷基；
2)是具有结构(III)的具有至少2个碳的含硅有机部分
其中R5和R6独立地选自C1-C8烷基、C3-C12支链烷基或芳基，R7独立地选自C1-C8烷基、芳基、羟基或结构(V)的硅氧烷，其中R11为氢、C1-C8烷基部分、被羟基取代的C1-C8烷基部分或芳基部分，并且R12和R13独立地选自C1-C8烷基部分、C3-C12支链烷基部分或芳基部分，并且其中p表示硅氧烷部分(V)中的重复单元数；和
3)是选自以下的有机部分：C2-C8烷基、C6-C16芳基或取代芳基、C2-C8烷基羧基、C6-C16芳基或取代芳基羧基、氟化C2-C8烷基羧基、氟化C6-C16芳基或取代芳基羧基、C2-C8烷基磺酰基、C6-C16芳基或取代芳基磺酰基、氟化C2-C8烷基磺酰基、氟化C6-C16芳基或取代芳基磺酰基及其混合物；
b)具有结构(VI)的多元醇化合物
其中X为C或N，其中r为至少2并且q在0-2范围内，并且其中当X为C时，q和r之和为4，以及当X为N时，q和r之和为3，并且另外其中R14为氢、C1至C8烷基部分或C2至C8羟基亚烷基部分；并且当X为N时，Y为C2-C8亚烷基部分；当X为C时，Y独立地选自直接价键、C2-C8亚烷基部分或包含具有结构(VII)的烷氧基亚烷链的部分，其中R15为C2至C8亚烷基部分，t为0至2并且t’为1至2；
和
c)溶剂。
在新的组合物中的可溶性多配体取代的金属化合物具有结构(I)
其中M为(4)价金属，n为1至20，并且其中R1、R2、R3和R4是独立地选自1)、2)、3)或其混合物的部分，其中
1)是有机部分(II)，
其中R8选自C2-C10亚烷基、C3-C12支链亚烷基、C5-C12亚环烷基、包含C＝C双键的C2-C10亚烷基、包含C＝C双键的C3-C12支链亚烷基和包含C＝C双键的C5-C12亚环烷基，并且另外，其中R9为氢或烷氧基羰基部分(IV)，其中R10为C1-C8烷基；
2)是具有结构(III)的具有至少2个碳的含硅有机部分
其中R5和R6独立地选自C1-C8烷基、C3-C12支链烷基或芳基，R7独立地选自C1-C8烷基、芳基、羟基或结构(V)的硅氧烷，其中R11为氢、C1-C8烷基部分、被羟基取代的C1-C8烷基部分或芳基部分，并且R12和R13独立地选自C1-C8烷基部分、C3-C12支链烷基部分或芳基部分，并且其中p表示硅氧烷部分(V)中的重复单元数；和
3)是选自以下的有机部分：C2-C8烷基、C6-C16芳基或取代芳基、C2-C8烷基羧基、C6-C16芳基或取代芳基羧基、氟化C2-C8烷基羧基、氟化C6-C16芳基或取代芳基羧基、C2-C8烷基磺酰基、C6-C16芳基或取代芳基磺酰基、氟化C2-C8烷基磺酰基、氟化C6-C16芳基或取代芳基磺酰基及其混合物；
本发明的多配体取代的金属化合物的制备是由其醇盐或乙酰丙酮化物(acac)来制备，如以下所述。使烷氧基或乙酰丙酮化物金属化合物与含SiOH的化合物(例如三甲基硅醇)、低聚物或聚合物(例如聚二甲基硅氧烷(羟基封端))反应，得到具有至少2个碳的含硅有机部分2)；然后接着与酸酐、环状酸酐或羧酸反应以得到有机部分(II)。可以构成多配体取代的金属化合物上的R1、R2、R3、R4基团中的一些的任选的C1-C8烷基取代基可以由来自醇盐金属前体的残留醇盐产生或通过使用C1-C8醇作为在多配体取代的金属化合物的制备中的另外的试剂产生。反应在可以同时溶解醇盐或乙酰丙酮化物前体和其它试剂的溶剂中完成。用于反应的典型溶剂或溶剂混合物包含酯、醚和醇官能团，例如丙二醇甲醚乙酸酯(PGMEA)和丙二醇甲醚(PGME)按体积计的70/30混合物。可以使用的其它溶剂是烃，例如环己烷、苯、甲苯等。
应当注意，根据需要可以使用多于两种配体与烷氧基金属反应。
本发明的一个实施方案是其中在组合物中具有结构(I)的可溶性多配位体取代的金属化合物的R1、R2、R3和R4选自部分1)、2)及其混合物。
组合物的另一个实施方案是其中在具有结构(I)的可溶性多配体取代的金属化合物中，部分2)，即具有结构(III)的具有至少2个碳的含硅有机部分的含量范围为结构(I)中的部分R1、R2、R3和R4的总摩尔的30摩尔％至60摩尔％，并且另外其中结构(II)的有机部分1)的含量范围为结构(I)中的部分R1、R2、R3和R4的总摩尔的30摩尔％至60摩尔％。
本发明的另一个实施方案是其中在结构(I)中，(4)价金属可以选自硅(4)、钛(4)、锆(4)、钽(4)、铅(4)、铪(4)、钼(4)、锗(4)、锡(4)、钨(4)和其他(4)价过渡金属。金属化合物可以是单原子的，n为约1。金属化合物也可以是多原子的，n为约2至约20，从而产生交替的金属-氧链段的链。多原子化合物可以仅包含一种类型的金属原子，例如钛，或者它们可以具有分散在金属-氧代基主链中的其它金属，如硅和锆。根据最终固化的金属氧化物层的期望特性，混合金属多原子金属化合物中的每种金属的量可以在0.001％至99.999％的范围内。这些新的金属化合物即使在暴露于空气之后也是稳定的，具有良好的填充性能并且也在化学溶液中可剥离。
在该新的组合物组分a)的一个实施方案中，具有结构(I)的可溶性多配体取代的金属化合物的n在2至20的范围内。本发明的另一方面是其中当n为2至20时，具有结构(I)的可溶性多配体取代的金属化合物可以具有多于一种的金属。
在该新的组合物的另一个实施方案中，组分a)，即具有结构(I)的可溶性多配体取代的金属化合物的n等于1。
结构(I)的多配体取代的金属化合物的可能的金属是Ti、Zr和Hf。
在另一个实施方案中，具有结构(III)的具有至少2个碳的含硅有机部分2)可以选自
在本发明的另一个实施方案中，新组合物由结构(I)的可溶性多配体取代的金属化合物组成，其中具有结构(III)的具有至少2个碳的含硅有机部分具有结构(V)的R7基团。
在该新的组合物的另一个优选的实施方案中，具有结构(I)的可溶性多配体取代的金属化合物，即有机部分II)选自
在本发明的另一个方面中，结构(I)的可溶性多配体取代的金属化合物具有选自部分3)、有机部分的R1、R2、R3和R4中的至少一个，其中该部分还选自C1-C8烷基部分，其以基团R1、R2、R3和R4的总量的0摩尔％至50摩尔％存在。
在本发明的另一个方面中，具有结构(I)的可溶性多配体取代的金属化合物具有选自部分1)和2)的R1、R2、R3和R4，其中部分1)以总部分的30-60mol％存在，并且部分2)以总部分的30-60mol％存在。
新的组合物中的多元醇化合物具有结构(VI)，
其中X为C或N，并且其中q和r分别是连接到X的部分R14-和–Y-OH的数目；其中r为至少2并且q在0-2的范围内，并且其中当X为C时，q和r之和为4，以及当X为N时，q和r之和为3；并且另外其中R14为氢、C1至C8烷基部分或C2至C8羟基亚烷基部分；此外，当X为N时，Y为C2-C8亚烷基部分；当X为C时，Y独立地选自直接价键、C2-C8亚烷基部分或包含具有结构(VII)的烷氧基亚烷链的部分，其中R15为C2至C8亚烷基部分，t表示存在于烷氧基亚烷基链中的烷氧基亚烷基单元数，t为0至2并且t’为1至2。
2.
在该新的组合物的另一方面，具有结构(Ⅵ)的多元醇添加剂具有具有结构(VII)的Y，并且此外其中该多元醇添加剂的重均分子量小于500且沸点高于250℃。在本发明制剂的该方面的一个实施方案中，多元醇添加剂具有结构(VI)，具有结构为(VII)的Y，并且还具有小于300的重均分子量和高于300℃的沸点。
该新的组合物的另一方面是其中具有结构(VI)的多元醇添加剂(其中Y具有结构(VII))选自四甘醇、三甘醇、丙三醇、三乙醇胺、二乙醇胺、新戊二醇、甘油丙氧基化物和季戊四醇乙氧基化物。
该新的组合物的另一方面是其中具有结构(VI)的多元醇添加剂(其中Y具有结构(VII))选自具有结构VIII、IX、X、XI和XII的化合物。
其中n＝1-2
其中a+b+c+d＝3-4
HOCH2CH2NHCH2CH2OH (XI)
本文还公开了新的组合物，其中溶剂可以选自含有醇、酯、酮、羧酸、酰胺、芳族类物质或二酮的溶剂或溶剂混合物。适合的溶剂的具体实例是：低级醇(C1-C6)，如异丙醇、正丁醇、叔丁醇、1-戊醇和4-甲基-2-戊醇；二醇，如乙二醇和丙二醇；二酮，如丁二酮、乙酰丙酮和己烷-2,5-二酮；二醇醚衍生物，如乙基溶纤剂、甲基溶纤剂、丙二醇单甲醚、二乙二醇单甲醚、二乙二醇单乙醚、二丙二醇二甲醚、丙二醇正丙醚或二乙二醇二甲醚；乙二醇醚酯衍生物，如乙基溶纤剂乙酸酯、甲基溶纤剂乙酸酯或丙二醇单甲醚乙酸酯；羧酸酯，如乙酸乙酯、乙酸正丁酯和乙酸戊酯；二元酸的羧酸酯，如二乙氧基化物和丙二酸二乙酯；二醇的二羧酸酯，如乙二醇二乙酸酯和丙二醇二乙酸酯；和羟基羧酸酯，如乳酸甲酯、乳酸乙酯、乙醇酸乙酯和3-羟基丙酸乙酯；酮酯，如丙酮酸甲酯或丙酮酸乙酯；烷氧基醇，如1-甲氧基-2-丙醇、2-甲氧基乙醇、乙氧基乙醇；烷氧基羧酸酯，如3-甲氧基丙酸甲酯，3-乙氧基丙酸乙酯，2-羟基-2-甲基丙酸乙酯或乙氧基丙酸甲酯；酮衍生物，如甲基乙基酮、乙酰丙酮、环戊酮、环己酮或2-庚酮；酮醚衍生物，如二丙酮醇甲醚；酮醇衍生物，如丙酮醇或二丙酮醇；内酯，如丁内酯和γ-戊内酯；酰胺衍生物，如二甲基乙酰胺或二甲基甲酰胺；芳族溶剂，如苯甲醚，及其混合物。
本发明的新的组合物可以含有另外的组分，如表面活性剂、流平剂、交联添加剂和增强涂层性能的热活化催化剂，例如，低级醇(C1-C6醇)、烷氧基醇、内酯、C1-C20烷基羧酸、表面流平剂(<总固体的5重量％)、二烷氧基双(β-二酮酯)(总固体的1-20重量％或5-10重量％)、二烷氧基双(β-二酮)(总固体的1-20重量％或5-10重量％)、热生酸剂、光生酸剂、热生碱剂或热自由基生成剂。二烷氧基双(β-二酮酯)和二烷氧基双(β-二酮)可以是乙酰丙酮、苯甲酰丙酮、4,4,4-三氟-1-苯基-1,3-丁二酮和乙酰乙酸乙酯。
表面流平剂或表面活性剂可以是聚乙二醇十二烷基醚、聚氧乙烯油基醚、聚乙二醇十八烷基醚、聚乙二醇叔辛基苯基醚，氟基表面活性剂和硅基表面活性剂。可以使用具有以下商品名的表面活性剂，Brij30、Brij52、Triton X-100、FC4430、KP341等。
为了进一步交联新的组合物，可以添加交联添加剂，包括例如基于双酚A的环氧化合物、基于双酚F的环氧化合物、基于双酚S的环氧化合物、基于酚醛清漆树脂的环氧树脂、基于聚(羟基苯乙烯)的环氧化合物、三聚氰胺化合物、苯并胍胺化合物和脲化合物。
还可以将热活化催化剂，例如热生酸剂添加到新的组合物中，以有助于在涂覆的组合物的热固化过程中交联。热生酸剂可以在90℃以上，例如120℃以上或150℃以上被活化。热生酸剂的实例包括：不含金属的锍鎓盐和碘鎓盐，例如强非亲核酸的三芳基锍鎓盐、二烷基芳基锍鎓盐和二芳基烷基锍鎓盐，强非亲核酸的烷基芳基碘鎓盐、二芳基碘鎓盐；和强非亲核酸的铵盐、烷基铵盐、二烷基铵盐、三烷基铵盐、四烷基铵盐。烷基或芳基磺酸的2-硝基苄基酯和其它热分解产生游离磺酸的磺酸酯。其它实例包括全氟烷基磺酸二芳基碘鎓、三(氟代烷基磺酰基)甲基化二芳基碘鎓、双(氟代烷基磺酰基)甲基化二芳基碘鎓、双(氟代烷基磺酰基)酰亚胺二芳基碘鎓、全氟烷基磺酸二芳基碘鎓或全氟烷基磺酸季铵。不稳定酯的实例：甲苯磺酸2-硝基苄酯、甲苯磺酸2,4-二硝基苄酯、甲苯磺酸2,6-二硝基苄酯、甲苯磺酸4-硝基苄酯；苯磺酸盐，如4-氯苯磺酸2-三氟甲基-6-硝基苄基酯、4-硝基苯磺酸2-三氟甲基-6-硝基苄基酯；酚磺酸酯，如4-甲氧基苯磺酸苯基酯；三(氟烷基磺酰基)甲基化季铵和双(氟代烷基磺酰基)酰亚胺季烷基铵；有机酸的烷基铵盐，如10-樟脑磺酸的三乙基铵盐。可以使用各种芳族(蒽、萘或苯衍生物)磺酸胺盐作为TAG，包括在美国专利第3,474,054号、第4,200,729号、第4,251,665号和第5,187,019号中公开的那些。TAG在170-220℃的温度下可能具有非常低的挥发性。
热活化过氧化物也可以用于目前的组合物中，例如过氧化苯甲酰，3,5-二氯苯过氧化物等。
在新的组合物的一个方面，多元醇的含量小于组合物中总固体的60重量％，并且大于总固体的3重量％。在本发明的另一个方面中，多元醇的含量小于组合物中总固体的40重量％，并且大于5重量％。
该新的组合物的另一方面是其中溶液中金属组分和多元醇组分的固体含量的总重量％为总固体的0.5-50重量％。本发明的该方面的优选实施方案是其中溶液中的金属组分和多元醇组分的固体含量的总重量％在0.1-35％范围内。
两种或更多种具有相同或不同金属的金属化合物可用于制剂中。当使用时，总金属化合物在基于总固体含量的40-97重量％或60-95重量％的范围内。
交联添加剂可以基于固体在2-15重量％之间存在。可以添加其它添加剂，例如润湿剂、表面活性剂、消泡剂、触变剂等。
新的组合物当暴露于空气中且然后储存时是稳定的。这些材料可以暴露于空气中长达24小时，然后储存至少1周，而不会降低光刻特性，例如涂层缺陷。此外，可以通过湿剥离溶液，如去除固化膜的化学溶液去除新的材料。
新的组合物可以涂覆在基底的表面上，所述基底如具有低介电常数的材料、硅、涂覆有金属表面的硅基底、铜涂覆的硅晶片、铜、铝、聚合物树脂、二氧化硅、金属、掺杂的二氧化硅、氮化硅、钽、多晶硅、陶瓷、铝/铜混合物、金属氮化物中的任一种，如AlN；砷化镓和其他这样的III/V族化合物。基底也可以是其它抗反射涂层或底层，例如涂覆在上述基底上的高碳底层。基底可以包括由上述材料制成的任何数量的层。
使用本领域技术人员熟知的技术，例如浸渍、旋涂或喷涂，将新的组合物涂覆在基底上。组合物的膜厚度范围为约3nm至约600nm，例如约5nm至约500nm。
该组合物可以涂覆在用通孔或沟槽图案化的光致抗蚀剂上。根据光致抗蚀剂中的通孔或沟槽特征的深度，涂层的膜厚度范围为约20nm至约900nm，例如约40nm至约700nm。可以在热板或对流烘箱上进一步加热涂层足够长的时间以除去大部分溶剂并诱导固化。固化温度可以为约150℃至约400℃，持续约30秒至约5分钟，例如约200℃至约300℃，持续约1至约2分钟。
在一个应用中，光致抗蚀剂最初涂覆在新的涂层本身上，而在另一个应用中，新的涂层被施加到含有通孔和/或沟槽的成像光致抗蚀剂膜以充当填充化合物。
光致抗蚀剂可以是半导体工业中使用的类型中的任一种，前提是光致抗蚀剂中的光活性化合物基本上在用于成像过程的曝光波长下吸收。可以使用可用于浸没光刻的光致抗蚀剂。通常，可以使用适用于使用浸没光刻成像的光致抗蚀剂，其中这样的光致抗蚀剂的折射率高于1.85，并且还是疏水的，具有在75°至95°范围内的水接触角。
迄今为止，已经有数种主要的深紫外(uv)曝光技术在微型化方面取得了显著进步，并且具有250nm至10nm的光化辐射，例如248nm、193nm、157和13.5nm。通常使用化学增强的光致抗蚀剂。用于248nm的光致抗蚀剂通常基于取代的聚羟基苯乙烯及其共聚物/鎓盐，例如在US 4,491,628和US 5,350,660中描述的那些。另一方面，用于在193nm和157nm下曝光的光致抗蚀剂需要非芳族聚合物，因为芳族化合物在该波长处是不透明的。US 5,843,624和US 6,866,984公开了可用于193nm曝光的光致抗蚀剂。通常，含有脂环烃的聚合物用于在200nm以下曝光的光致抗蚀剂。由于许多原因，脂环烃被引入到聚合物中，主要是因为它们具有相对较高的碳氢比，这提高了耐蚀刻性，它们也提供在低波长处的透明度，并且它们具有相对较高的玻璃化转变温度。US 5,843,624公开了用于光致抗蚀剂的聚合物，其通过马来酸酐和不饱和环状单体的自由基聚合获得。可以使用任何已知类型的193nm光致抗蚀剂，例如在US 6,447,980和US 6,723,488中描述的那些，并且通过引用并入本文。已知在157nm处敏感且基于具有侧氟醇基团的氟化聚合物的两种基本类型的光致抗蚀剂在该波长处基本上是透明的。一类157nm的氟代醇光致抗蚀剂衍生自含有诸如氟化降冰片烯的基团的聚合物，并且使用金属催化或自由基聚合与其它透明单体如四氟乙烯(US 6,790,587和US 6,849,377)均聚或共聚。通常，这些材料由于其高脂环含量而具有更高的吸光度，但具有良好的耐等离子蚀刻性。最近，描述了一类157nm的氟代醇聚合物，其中聚合物主链衍生自不对称二烯如1,1,2,3,3-五氟-4-三氟甲基-4-羟基-1,6-庚二烯的环化聚合(US 6,818,258)或氟二烯与烯烃的共聚(US6,916,590)。这些材料在157nm处提供可接受的吸光度，但是由于与氟代降冰片烯聚合物相比较低的脂环含量，具有较低的耐等离子体蚀刻性。通常可将这两类聚合物共混以提供第一聚合物类型的高耐蚀刻性和第二聚合物类型在157nm处的高透明度之间的平衡。吸收13.5nm的极紫外辐射(EUV)的光致抗蚀剂也是有用的，并且是本领域已知的。因此，在约12nm至约250nm的范围内吸收的光致抗蚀剂是有用的。新的涂层也可以在使用纳米压印和电子束抗蚀剂的工艺中使用。
在涂覆工艺后，光致抗蚀剂成影像地曝光。曝光可以使用典型的曝光设备完成。曝光的光致抗蚀剂然后在含水显影剂中显影以去除经处理的光致抗蚀剂。显影剂优选为碱性水溶液，其包含例如四甲基氢氧化铵(TMAH)，通常为2.38重量％的TMAH。显影剂还可以包含表面活性剂(多种表面活性剂)。任选的加热步骤可以在显影之前和曝光之后引入该方法中。
采用该新的组合物的本发明的方法的一个方面是以下方法，其中基底是图案化基底，如图案化有机聚合物(例如，图案化光致抗蚀剂)，其包括通孔、沟槽、孔或其它中空形貌特征，其中在烘烤该膜之后，所述方法还包括用适合的等离子体或化学剥离剂去除覆盖在图案化光致抗蚀剂的顶部上的组合物的步骤。适合的等离子体的实例是包含氟化烃如CF4或无机氟化化合物如SF6的那些。
在本发明方法的一个方面，其中图案化基底是图案化有机聚合物层，该方法还可以包括用氧等离子体去除图案化有机聚合物，从而形成原始图案化光致抗蚀剂的负色调图像的步骤。在本发明方法的一个实施方案中，图案化有机聚合物是图案化光致抗蚀剂。
在一个实施方案中，当图案化基底是电子器件的部分时，新的组合物供选择地可以用作填充材料，其在膜固化之后在化学溶液中部分剥离以形成金属氧化物。特征中剩余的金属氧化物膜可以用于作为栅极电介质的高K(电介质)材料，以改善电流泄漏。
有利地，如本文所述，可以使用剥离剂去除新的金属层，所述剥离剂为化学溶液。与干蚀刻程序相比，金属氧化物的可湿剥离性提供了简单且低成本的返工方法。
如在对比实施例中所述的，包含多元醇的组合物对于具有良好填充性能是重要的。在扫描电子显微镜下检查涂层特征。出乎意料地，在没有多元醇的情况下，在类似的处理条件下观察到非常大的空隙。包含多元醇的新的组合物的涂覆膜无空隙形成，同时保留其它期望的涂层特性，如涂层均匀性、涂层厚度、涂层均匀性、涂层缺陷或涂层空隙形成。添加的多元醇的制剂也具有良好的货架期稳定性，其中这些制剂在室温下稳定数月或在40℃的强制老化下稳定一周，并且涂层特性没有变化。
出于所有目的将上述提及的文献中的每一个通过引用整体并入本文。以下具体实施例将提供制备和利用本发明的组合物的方法的详细说明。然而，这些实施例并不旨在以任何方式限制或限定本发明的范围，并且不应被解释为提供必须排他性地用于实施本发明的条件、参数或值。
实施例
在J.A.Woollam VASE32椭圆偏振计上测量以下实例金属化合物涂层的折射率(n)和消光系数(k)值。
使用Water 2695Alliance分离模块，或配备有Waters双波长UV检测器2487型的等同仪器，或等同仪器和等同检测器Waters差示折射计2414型，在凝胶渗透色谱仪上测量聚合物的分子量，Shodex柱设置如下：一个Shodex GPC KF-801(1.5x 103)柱，两个ShodexGPCKF-802(5x 103)柱和一个Shodex GPC KF-804(4x 105)柱。流动相为UV稳定的HPLC级THF，分子量标准品是由American Standards Corporation和Millipore Corporation提供的一组聚苯乙烯标准品或等同物。
ArF稀释剂获得自EMD Performance Materials Corp.(70,Meister Ave.,Somerville,NJ)。除非另有说明，Ti(IV)、丁氧化物聚合物(BTP)、季戊四醇乙氧基化物(3/4EO/OH)和其他化学品购自Sigma-Aldrich Corp(St.Louis,MO,USA)。
合成实施例1
将40g Ti(IV)BTP(丁氧化物聚合物)聚合物溶于52g ArF稀释剂溶剂(70％PGMEA30％PGME)中并在N2下倒入反应容器中。搅拌下将温度升高至50℃，同时将12g三甲基硅醇滴加到以上TiBTP中。将反应在60℃下保持2小时。然后将20g 1,2-环己烷二羧酸酐和20gArF稀释剂溶剂与上述反应混合物混合，并在60℃下继续反应约1小时。在冷却至室温过夜后，将产物储存在棕色瓶中并仔细密封。在环己烷中获取产物溶液的FT-IR光谱。将在970cm-1下的FT-IR共振归属为Ti-O-Si伸缩频率。
合成实施例2
将40g Ti(IV)BTP聚合物溶于58g ArF稀释剂溶剂中并在N2下倒入反应容器中。搅拌下将温度升高至50℃，同时将18g三甲基硅醇滴加到以上TiBTP溶液中。将反应在60℃下保持2小时。然后将30g 1,2-环己烷二羧酸酐和30g ArF稀释剂溶剂与上述反应混合物混合，并在60℃下继续反应约1小时。在冷却至室温过夜后，将产物储存在棕色瓶中并仔细密封。在环己烷中获取产物溶液的FT-IR光谱。将在970cm-1下的FT-IR共振归属为Ti-O-Si伸缩频率。
合成实施例3
将40g Ti(IV)BTP聚合物溶于58g ArF稀释剂溶剂中并在N2下倒入反应容器中。搅拌下将温度升高至50℃，同时将18g三甲基硅醇滴加到以上TiBTP溶液中。将反应在60℃下保持2小时。然后将22g柠康酸酐和22g ArF稀释剂溶剂与上述反应混合物混合，并在60℃下继续反应约1小时。在冷却至室温过夜后，将产物储存在棕色瓶中并仔细密封。在环己烷中获取产物溶液的FT-IR光谱。将在970cm-1下的FT-IR共振归属为Ti-O-Si伸缩频率。
合成实施例4
将450g柠康酸酐、600g Ti(IV)丁氧化物聚合物和1050g ArF稀释剂通过搅拌混合，并在氮气下在烧瓶中加热。将反应在50℃下保持约4小时。冷却至室温过夜后，将固体含量为50％的产物储存在棕色瓶中。质子NMR显示产物中没有酸酐羰基。在环己烷中的FT-IR光谱显示由于Ti-OBu共振在～1100cm-1处的峰降低，和由于Ti-OC(＝O)R共振在1570cm-1处的新的宽峰。
合成实施例5
将40g Ti(IV)BTP聚合物、22.5g柠康酸酐和50g PGMEA/PGME 70:30通过搅拌混合，并在氮气下在烧瓶中加热。将反应在50℃下保持约2小时。将2.5g九氟丁烷-1-磺酸在15g PGMEA/PGME 70:30中缓慢加入到反应容器中。使反应在50℃下再继续2小时。冷却至室温后，将固体含量为50％的产品储存在棕色瓶中。在环己烷中获取的FT-IR光谱显示由于Ti-OBu共振在～1100cm-1处的峰降低，和由于Ti-OC(＝O)R共振在1570cm-1处的新的宽峰。
合成实施例6
将15g柠康酸酐、40g Ti(IV)丁氧化物聚合物和55g ArF稀释剂通过搅拌混合，并在氮气下在烧瓶中加热。将反应在50℃下保持约4小时。冷却至室温过夜后，将固体含量为50％的产物储存在棕色瓶中。质子NMR显示产物中没有酸酐。在环己烷中获取的FT-IR光谱显示由于Ti-OBu共振在～1100cm-1处的峰降低，和由于Ti-OC(＝O)R共振在1570cm-1处的新的宽峰。
合成实施例7
将200g叔丁醇铪(IV)溶于276g ArF稀释剂溶剂中并在N2下倒入反应容器中。搅拌下将温度升高至50℃，同时将76g三甲基硅醇滴加到以上溶液中。将反应在60℃下保持2小时。然后将127g1,2-环己烷二羧酸酐和127g ArF稀释剂溶剂与上述反应混合物混合，并在60℃下继续反应约1小时。在冷却至室温过夜后，将产物储存在棕色瓶中并仔细密封。
合成实施例8
将200g叔丁醇锆溶于246.5g ArF稀释剂溶剂中并在N2下倒入反应容器中。搅拌下将温度升高至50℃，同时将77.5g三甲基硅醇滴加到以上溶液中。将反应在60℃下保持2小时。然后将103g 1,2-环己烷二羧酸酐和103g ArF稀释剂溶剂与上述反应混合物混合，并在60℃下继续反应约1小时。在冷却至室温过夜后，将产物储存在棕色瓶中并仔细密封。
合成实施例9
将200g叔丁醇锆溶于262g ArF稀释剂溶剂中并在N2下倒入反应容器中。搅拌下将温度升高至50℃，同时将62g三甲基硅醇滴加到以上溶液中。将反应在60℃下保持2小时。然后将103g 1,2-环己烷二羧酸酐和103g ArF稀释剂溶剂与上述反应混合物混合，并在60℃下继续反应约1小时。在冷却至室温过夜后，将产物储存在棕色瓶中并仔细密封。
合成实施例10
将40g叔丁醇铪(IV)溶于56g ArF稀释剂溶剂并在N2下倒入反应容器中。在搅拌的同时将温度升高至50℃，并在搅拌下N2下将15.4g三甲基硅醇滴加至以上溶液中。将反应混合物在60℃下保持2h。在该时间后，将32.4g对甲苯磺酸一水合物在75.6g ArF稀释剂溶剂中的溶液添加到反应混合物中，并在60℃下继续反应1小时。在冷却至室温过夜后，将产物储存在棕色瓶中并仔细密封。
制剂和涂层实施例1
在PGMEA/PGME 70:30溶剂中制备含有14.6重量％的来自合成实施例1(或合成实施例2-6中任一个)的金属聚合物和5.4重量％三乙醇胺的20％wt/wt溶液。充分混合后，将溶液旋涂在硅晶片上，并在250℃下烘烤60秒。涂覆晶片通过XSEM照片显示出良好的涂层质量。
制剂和涂层实施例2
在PGMEA/PGME 70:30溶剂中制备含有12重量％的来自合成实施例1的金属聚合物和8重量％的季戊四醇乙氧基化物(3/4EO/OH)的20％wt/wt溶液。充分混合后，将溶液旋涂在硅晶片上，并在250℃下烘烤60秒。涂覆晶片通过XSEM照片显示出良好的涂层质量。
制剂和涂层实施例3
在PGMEA/PGME 70:30溶剂中制备含有10重量％的来自合成实施例4的金属聚合物和10重量％的季戊四醇乙氧基化物(3/4EO/OH)的20％wt/wt溶液。充分混合后，将溶液旋涂在硅晶片上，并在250℃下烘烤60秒。涂覆晶片通过XSEM照片显示出良好的涂层质量。
制剂和涂层实施例4
在PGMEA/PGME 70:30溶剂中制备含有22.0重量％的来自合成实施例7(或合成实施例7中任一个)的金属聚合物和3.0重量％的三乙醇胺的25％wt/wt溶液。充分混合后，将溶液旋涂在硅晶片上，并在250℃下烘烤60秒。涂覆晶片通过XSEM照片显示出良好的涂层质量。
制剂和涂层实施例5
在PGMEA/PGME 70:30溶剂中制备含有21.8重量％的来自合成实施例8(或合成实施例9)的金属聚合物和3.2wt％的三乙醇胺的25重量％溶液。充分混合后，将溶液旋涂在硅晶片上，并在250℃下烘烤60秒。涂覆晶片通过XSEM照片显示出良好的涂层质量。
制剂和涂层实施例6
在PGMEA/PGME 70:30溶剂中制备含有20重量％的来自合成实施例8的金属聚合物和5重量％的三乙醇胺的25重量％溶液。充分混合后，将溶液旋涂在硅晶片上，并在250℃下烘烤60秒。涂覆晶片通过XSEM照片显示出良好的涂层质量。
制剂和涂层实施例7
在PGMEA/PGME 70:30溶剂中制备含有14.6重量％的来自合成实施例10的金属聚合物和5.4重量％的三乙醇胺的20重量％溶液。充分混合后，将溶液旋涂在硅晶片上，并在250℃下烘烤60秒。涂覆晶片通过XSEM照片显示出良好的涂层质量。
烘烤后膜中金属重量％的测定
分别在硅晶片上涂覆制剂实施例1、2或3并在适宜温度下烘烤，通常为250℃/60s-300℃/60s。通过元素分析和TGA失重测量测量膜中的金属重量％。来自两个方法的结果是一致的。在250℃/60s–300℃/60s烘烤条件下，测量的膜中的总金属氧化物含量在20至40重量％范围内。在所有情况下，膜主要由基于元素分析的具有少量硅含量的钛化合物组成。
金属氧化物膜的介电常数的测量实施例
将制剂实施例4和6涂覆并在硅晶片上并在250℃/60s下烘烤，得到目标为200nm的膜厚度的金属氧化物膜。基于使用外部HP3890A仪表在100kHz下的电容测量，计算金属氧化物膜的电介质常数K。制剂实施例4得到K＝4.5的膜，制剂实施例6得到K＝5.1的膜，其高于有机化合物的K值(<4)。
通孔填充性能评价实施例1
将制剂实施例1-7单独涂覆在硅晶片上并在250℃/60s下烘烤，所述硅晶片具有70、80、90和100nm大小的深度为650nm的通孔，其中通孔以半密集和隔离的图案间隔，分别具有1:1、1:1.4和1:6的孔间距比。在扫描电子显微镜下检查涂覆的晶片，并且发现在所有情况下都观察到良好的填充性能，没有任何空隙。
比较通孔填充性能评价实施例1
在PGMEA/PGME 70:30溶剂中制备含有来自合成实施例1至10的金属聚合物的各20重量％溶液。在混合以影响金属聚合物的完全溶解之后，将溶液单独旋涂在硅晶片上并在250℃/60s下烘烤，所述硅晶片具有70、80、90和100nm大小的深度为650nm的通孔，其中通孔以半密集和隔离的图案间隔，分别具有1:1、1:1.4和1:6的孔间距比。在扫描电子显微镜下检查各个涂覆的晶片。在所有情况下，观察到显著的空隙。这些比较例证明了在新的组合物中多元醇的存在给出的意想不到的结果，其如“通孔填充性能评价实施例1”所证明的，在类似条件下赋予良好的通孔填充性能。
Claims (15)
1.一种组合物，其包含：
a)结构(I)的可溶性多配体取代的金属化合物
其中M为(4)价金属，优选地选自硅(4)、钛(4)、锆(4)、钽(4)、铅(4)、铪(4)、钼(4)、锗(4)、锡(IV)和钨(4)，n为1至20，并且其中R1、R2、R3和R4是独立地选自1)、2)、3)或其混合物，优选地选自部分1)、部分2)和其混合物的部分，其中
1)是有机部分(II)，
其中R8选自C2-C10亚烷基、C3-C12支链亚烷基、C5-C12亚环烷基、包含C＝C双键的C2-C10亚烷基、包含C＝C双键的C3-C12支链亚烷基和包含C＝C双键的C5-C12亚环烷基，并且另外，其中R9为氢或烷氧基羰基部分(IV)，其中R10为C1-C8烷基，
2)是具有结构(III)的具有至少2个碳的含硅有机部分
其中R5和R6独立地选自C1-C8烷基、C3-C12支链烷基或芳基，R7独立地选自C1-C8烷基、芳基、羟基或结构(V)的硅氧烷，其中R11为氢、C1-C8烷基部分、被羟基取代的C1-C8烷基部分或芳基部分，并且R12和R13独立地选自C1-C8烷基部分、C3-C12支链烷基部分或芳基部分，并且其中p表示硅氧烷部分(V)中的重复单元数；和
3)是选自以下的有机部分：C2-C8烷基、C6-C16芳基或取代芳基、C2-C8烷基羧基、C6-C16芳基或取代芳基羧基、氟化C2-C8烷基羧基、氟化C6-C16芳基或取代芳基羧基、C2-C8烷基磺酰基、C6-C16芳基或取代芳基磺酰基、氟化C2-C8烷基磺酰基、氟化C6-C16芳基或取代芳基磺酰基及其混合物；
b)具有结构(VI)的多元醇化合物
其中X为C或N，其中r为至少2并且q在0-2范围内，并且其中当X为C时，q和r之和为4，以及当X为N时，q和r之和为3，并且另外其中R14为氢、C1至C8烷基部分或C2至C8羟基亚烷基部分；并且当X为N时，Y为C2-C8亚烷基部分；当X为C时，Y独立地选自直接价键、C2-C8亚烷基部分或包含具有结构(VII)的烷氧基亚烷链的部分，其中R15为C2至C8亚烷基部分，t为0至2并且t’为1至2；
和
c)溶剂。
2.权利要求1所述的组合物，其中部分2)的范围为结构(I)中的部分R1、R2、R3和R4的总摩尔的30摩尔％至60摩尔％，并且另外其中结构(II)的有机部分1)的范围为结构(I)中的部分R1、R2、R3和R4的总摩尔的30摩尔％至60摩尔％。
3.权利要求1或2所述的组合物，其中所述含硅有机部分2)选自
4.权利要求1至3任一项所述的组合物，其中R7具有结构(V)。
5.权利要求1至4任一项所述的组合物，其中所述有机部分3)选自
6.权利要求1至5任一项所述的组合物，其中具有结构(VI)的多元醇具有结构为(VII)的Y，并且另外其中所述多元醇的分子量小于500且沸点高于250℃。
7.权利要求1至6任一项所述的组合物，其中所述具有结构(VI)的多元醇选自四甘醇、三甘醇、丙三醇、三乙醇胺、二乙醇胺、新戊二醇、甘油丙氧基化物和季戊四醇乙氧基化物。
8.权利要求1至7任一项所述的组合物，其中所述多元醇选自具有结构VIII、IX、X、XI和XII的化合物
其中n＝1-2
其中a+b+c+d＝3-4
HOCH2CH2NHCH2CH2OH (XI)
9.权利要求1至8任一项所述的组合物，其中所述多元醇的含量小于组合物中的总固体的60重量％但大于5重量％。
10.权利要求1至9任一项所述的组合物，其中所述溶剂选自醇、酯、酮、内酯、二酮、芳族类物质、羧酸、酰胺或其混合物。
11.权利要求1至10任一项所述的组合物，还包含至少一种另外的组分，所述组分选自热生酸剂、热生碱剂和热活化过氧化物。
12.权利要求1至11任一项所述的组合物，还包含至少一种另外的组分，所述组分选自表面活性剂、流平剂、交联添加剂和热活化催化剂。
13.权利要求1至12任一项所述的组合物，其中在结构(I)中n为2至20。
14.权利要求1至13任一项所述的组合物，其中在结构(I)中n为1。
15.一种制造电子器件的方法，其包括：
a.将权利要求1至14任一项所述的组合物施加到基底上；和
b.在150℃至400℃的温度下烘烤膜，优选地，所述基底是包括形貌特征的图案化基底，其中在烘烤所述膜后，所述方法还包括以下步骤：
c.用化学剥离剂或用氟化等离子体蚀刻移除覆盖所述图案化基底的顶部的组合物，并且更优选地，所述图案化基底是图案化有机聚合物层，并且其中所述方法还包括以下步骤：
d.使用氧等离子体移除图案化有机聚合物，从而形成原始图案化光致抗蚀剂的负色调图像，
或所述基底优选地为包含中空形貌特征的图案化基底，其中在烘烤所述膜之后，所述方法还包括以下步骤：
c.使用化学剥离剂或使用氟化等离子体蚀刻移除所述组合物，以使所述中空形貌特征部分地被金属氧化物材料填充。
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2015
- 2015-02-11 US US14/619,603 patent/US9499698B2/en active Active
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2016
- 2016-02-02 KR KR1020177025519A patent/KR102367238B1/ko active IP Right Grant
- 2016-02-02 CN CN201680009834.6A patent/CN107251203B/zh active Active
- 2016-02-02 EP EP16702558.4A patent/EP3257069B1/en active Active
- 2016-02-02 SG SG11201705487QA patent/SG11201705487QA/en unknown
- 2016-02-02 WO PCT/EP2016/052167 patent/WO2016128252A1/en active Application Filing
- 2016-02-02 JP JP2017542066A patent/JP6810696B2/ja active Active
- 2016-02-05 TW TW105104156A patent/TWI669353B/zh active
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| CN103582665A (zh) * | 2011-06-21 | 2014-02-12 | Az电子材料美国公司 | 底层组合物及其方法 |
| WO2014207142A1 (en) * | 2013-06-28 | 2014-12-31 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
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| US20220365427A1 (en) * | 2021-04-30 | 2022-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist composition and method for manufacturing a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3257069A1 (en) | 2017-12-20 |
| TW201639927A (zh) | 2016-11-16 |
| JP2018507933A (ja) | 2018-03-22 |
| US20160230019A1 (en) | 2016-08-11 |
| SG11201705487QA (en) | 2017-08-30 |
| US9499698B2 (en) | 2016-11-22 |
| WO2016128252A1 (en) | 2016-08-18 |
| JP6810696B2 (ja) | 2021-01-06 |
| KR102367238B1 (ko) | 2022-02-23 |
| EP3257069B1 (en) | 2018-11-21 |
| TWI669353B (zh) | 2019-08-21 |
| KR20170116134A (ko) | 2017-10-18 |
| CN107251203B (zh) | 2019-05-17 |
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