TWI544280B - 低介電光可成像組合物及由其製得之電子裝置 - Google Patents

低介電光可成像組合物及由其製得之電子裝置 Download PDF

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Publication number
TWI544280B
TWI544280B TW102105212A TW102105212A TWI544280B TW I544280 B TWI544280 B TW I544280B TW 102105212 A TW102105212 A TW 102105212A TW 102105212 A TW102105212 A TW 102105212A TW I544280 B TWI544280 B TW I544280B
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TW
Taiwan
Prior art keywords
composition
polymer
substituted
vinyl
group
Prior art date
Application number
TW102105212A
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English (en)
Chinese (zh)
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TW201341963A (zh
Inventor
張汝志
金志勳
布哈拉庫瑪Ｋ 帕特
伊麗莎白 沃伐
Original Assignee
Ａｚ電子材料（盧森堡）股份有限公司
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Publication of TW201341963A publication Critical patent/TW201341963A/zh
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • H10P14/6342—
    • H10P14/6922—
    • H10W20/48—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
TW102105212A 2012-02-09 2013-02-08 低介電光可成像組合物及由其製得之電子裝置 TWI544280B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/369,809 US8871425B2 (en) 2012-02-09 2012-02-09 Low dielectric photoimageable compositions and electronic devices made therefrom

Publications (2)

Publication Number Publication Date
TW201341963A TW201341963A (zh) 2013-10-16
TWI544280B true TWI544280B (zh) 2016-08-01

Family

ID=47913498

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102105212A TWI544280B (zh) 2012-02-09 2013-02-08 低介電光可成像組合物及由其製得之電子裝置

Country Status (9)

Country Link
US (1) US8871425B2 (enExample)
EP (1) EP2812399B1 (enExample)
JP (1) JP5941559B2 (enExample)
KR (1) KR101904582B1 (enExample)
CN (1) CN104093784B (enExample)
PH (1) PH12014501731A1 (enExample)
SG (1) SG11201403059WA (enExample)
TW (1) TWI544280B (enExample)
WO (1) WO2013117989A1 (enExample)

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JP6213270B2 (ja) * 2014-01-31 2017-10-18 住友化学株式会社 Ｕｖ−ｌｅｄ用ポリシルセスキオキサン系封止材組成物及びそのための溶媒の使用
CN104282250B (zh) * 2014-10-24 2016-08-31 深圳市华星光电技术有限公司 Tft 中mis 结构设计的控制方法及系统
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
US10254650B2 (en) * 2016-06-29 2019-04-09 Honeywell International Inc. Low temperature SC1 strippable oxysilane-containing coatings
EP3500648A1 (en) 2016-08-22 2019-06-26 Merck Patent GmbH Mixture for optical devices
WO2018050526A1 (en) 2016-09-13 2018-03-22 Merck Patent Gmbh Light luminescent particle
US10544330B2 (en) 2017-01-20 2020-01-28 Honeywell International Inc. Gap filling dielectric materials
JP2021005625A (ja) * 2019-06-26 2021-01-14 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ゲート絶縁膜形成組成物

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US4442197A (en) 1982-01-11 1984-04-10 General Electric Company Photocurable compositions
ATE37242T1 (de) 1984-02-10 1988-09-15 Ciba Geigy Ag Verfahren zur herstellung einer schutzschicht oder einer reliefabbildung.
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
JPH06148895A (ja) 1992-11-06 1994-05-27 Toray Ind Inc 感光性樹脂組成物およびこれを用いたパターン形成方法
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
US5962067A (en) * 1997-09-09 1999-10-05 Lucent Technologies Inc. Method for coating an article with a ladder siloxane polymer and coated article
EP1197998A3 (en) 2000-10-10 2005-12-21 Shipley Company LLC Antireflective porogens
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
JP2004165613A (ja) 2002-06-03 2004-06-10 Shipley Co Llc 電子デバイスの製造
US7041748B2 (en) * 2003-01-08 2006-05-09 International Business Machines Corporation Patternable low dielectric constant materials and their use in ULSI interconnection
JP5102428B2 (ja) * 2003-11-25 2012-12-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 導波路組成物およびこれから形成された導波路
DE602005001341T2 (de) * 2004-04-14 2008-02-21 Rohm and Haas Electronic Materials, L.L.C., Marlborough Zusammensetzungen für Wellenleiter und daraus hergestellte Wellenleiter
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
ATE491762T1 (de) * 2005-09-29 2011-01-15 Dow Corning Verfahren zum abtrennen von hochtemperaturfilmen und/oder vorrichtungen von metallsubstraten
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EP2071400A1 (en) * 2007-11-12 2009-06-17 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
TWI384025B (zh) * 2009-04-27 2013-02-01 Ind Tech Res Inst 聚乙烯醇膜組成物及包含其之偏光板
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Also Published As

Publication number Publication date
CN104093784A (zh) 2014-10-08
JP2015508184A (ja) 2015-03-16
US8871425B2 (en) 2014-10-28
JP5941559B2 (ja) 2016-06-29
SG11201403059WA (en) 2014-07-30
KR20140117391A (ko) 2014-10-07
PH12014501731B1 (en) 2014-11-17
TW201341963A (zh) 2013-10-16
EP2812399B1 (en) 2016-04-20
US20130209754A1 (en) 2013-08-15
KR101904582B1 (ko) 2018-10-04
WO2013117989A1 (en) 2013-08-15
PH12014501731A1 (en) 2014-11-17
CN104093784B (zh) 2016-09-21
EP2812399A1 (en) 2014-12-17

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