TW201930494A - 光阻面塗層組合物及處理光阻組合物之方法 - Google Patents
光阻面塗層組合物及處理光阻組合物之方法 Download PDFInfo
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Classifications
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- C—CHEMISTRY; METALLURGY
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/285—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing a polyether chain in the alcohol moiety
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- C—CHEMISTRY; METALLURGY
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Abstract
光阻面塗層組合物,其包含:包含具有以下通式(I)的單體作為聚合單元的含水鹼溶性聚合物:其中:R1
選自H、鹵素原子、C1-C3烷基或C1-C3鹵代烷基;R2
獨立地選自經取代或未經取代之C1-C12烷基或經取代或未經取代之C5-C18芳基;R3及R4獨立地是H、經取代或未經取代之C1-C12烷基、經取代或未經取代之C5-C18芳基;X是C2-C6經取代或未經取代之伸烷基;其中X可視情況包含一個或多個環且與R2
一起可視情況形成環;L1
是單鍵或連接基團;p是1到50的整數;且q是1到5的整數;及溶劑。亦提供塗佈有所描述之面塗層組合物的基板及處理光阻組合物之方法。本發明尤其適用於製造半導體器件。
Description
本發明係關於可施用於光阻組合物之上的光阻面塗層組合物。本發明尤其適用作用於形成半導體器件的浸沒式微影製程(immersion lithography process)中的面塗層。
光阻用於將圖像轉印至基板上。在基板上形成光阻層且接著經光罩使光阻層暴露於激活輻射源。光罩具有對激活輻射不透明的區域及對激活輻射透明的其他區域。暴露於激活輻射提供光阻塗層之光誘導化學轉化,由此將光罩之圖案轉印至經光阻塗佈之基板上。在暴露之後,對光阻進行烘烤且藉由與顯影劑溶液接觸以使其顯影,從而得到允許選擇性加工基板之浮雕圖像。
用於在半導體器件中實現奈米(nm)級特點大小的一個方法是使用較短波長的光。然而,找到在193 nm以下透明的材料的難度產生浸沒式微影製程以藉由使用液體增加透鏡的數值孔徑來將更多的光聚焦至膜中。浸沒式微影在成像器件(例如ArF光源)的最後一個表面與基板例如半導體晶圓上的第一表面之間採用相對較高的折射率液體,通常是水。
在浸沒式微影中,浸沒流體與光阻層之間的直接接觸可引起光阻的組分濾出至浸沒流體中。這種濾出可造成光學透鏡的污染且引起浸沒流體的有效折射率及傳輸特性的變化。為了解決這個問題,在浸沒流體及底層光阻層之間引入光阻面塗層作為阻擋後者。
為了改進面塗層材料的性能,已例如在以下中提出使用自隔離面塗層組合物以形成分級面塗層:《用於浸沒式微影的自隔離材料(Self-segregating Materials for Immersion Lithography)》,Daniel P. Sanders等人,《抗蝕劑材料及處理技術XXV的進展(Advances in Resist Materials and Processing Technology XXV)》,《SPIE會議記錄(Proceedings of the SPIE)》,第6923卷,第692309-1 - 692309-12頁(2008)。自隔離面塗層在理論上允許在浸沒液體界面與光阻界面處的具有所需特性的經調整材料,例如在浸沒流體界面處的改進的水後退接觸角(receding contact angle)及在光阻界面處的良好的顯影劑溶解度。
然而,在浸沒式微影中使用面塗層存在各種挑戰。視特徵如面塗層折射率、厚度、酸性、與抗蝕劑的化學相互作用以及浸泡時間而定,面塗層可影響例如加工窗口、臨界尺寸(CD)變化以及抗蝕劑輪廓中的一種或多種。另外,使用面塗層可能不利地影響器件產率,此歸因於例如微橋接缺陷或阻止恰當的抗蝕劑圖案形成的其他圖案化缺陷。面塗層聚合物的所需特性包括例如有機配製物溶劑中良好的溶解度以及在含水鹼顯影劑中高溶解速率(DR)、低塗層缺陷、抗分層性及良好的圖案塌陷外邊距(pattern collapse margin)。
此項技術一直需要改進的光阻面塗層組合物及利用解決與先前技術相關之一個或多個問題的此類材料的微影方法。
根據本發明的第一態樣,提供光阻面塗層組合物。所述組合物包含:包含具有以下通式(I)的單體作為聚合單元的含水鹼溶性聚合物:其中:R1
選自H、鹵素原子、C1-C3烷基或C1-C3鹵代烷基;R2
獨立地選自經取代或未經取代之C1-C12烷基或經取代或未經取代之C5-C18芳基;X是C2-C6經取代或未經取代之伸烷基;其中X可視情況包含一個或多個環且與R2
一起可視情況形成環;L1
是單鍵或連接基團;p是1到50的整數;且q是1到5的整數;及溶劑。
根據本發明的另一個態樣,提供經塗佈基板。經塗佈基板包含:基板上的光阻層;及光阻層上的由如本文所描述的光阻面塗層組合物形成的面塗層。
根據本發明的另一個態樣,提供處理光阻組合物的方法。所述方法包含:(a)將光阻組合物施用於基板上以形成光阻層;(b)在光阻層上施用如本文所描述的光阻面塗層組合物以形成面塗層;(c)使面塗層及光阻層暴露於激活輻射;且(d)使所暴露的面塗層及光阻層與顯影劑接觸以形成抗蝕圖案。
施用於光阻層上的本發明的較佳面塗層組合物可最小化或防止光阻層的組分遷移至浸沒式微影製程中使用的浸沒流體中。如本文所使用的術語“浸沒流體”係指介於暴露工具的透鏡與經光阻塗佈的基板之間的流體(通常是水)以進行浸沒式微影。
此外如本文所使用,若相對於經相同方式處理但不存在面塗層組合物層的相同光阻系統而言,在使用面塗層組合物時在浸沒流體中偵測到減少量的酸或有機材料,則認為面塗層抑制光阻材料遷移至浸沒流體中。可在暴露於光阻(存在及不存在外塗佈面塗層組合物層)之前,接著在微影處理光阻層(存在及不存在外塗佈面塗層組合物層)且進行穿過浸沒液體的暴露之後,藉由浸沒流體之質譜分析進行浸沒流體中的光阻材料的偵測。較佳地,面塗層組合物使浸沒流體中所殘留的光阻材料(例如如藉由質譜分析所偵測到的酸或有機物)相對於不採用任何面塗層(即浸沒流體直接接觸光阻層)的相同光阻而言減少至少10%,更佳地,面塗層組合物使浸沒流體中所殘留的光阻材料相對於不採用面塗層的相同光阻而言減少至少20%、50%或100%。
本發明之較佳面塗層組合物具有例如含水鹼顯影劑中針對層的暴露與未暴露區域的極佳顯影劑溶解度。本發明之較佳面塗層組合物可進一步允許改進在浸沒式微影製程中至關重要的各種水接觸角特徵中的一種或多種,例如在浸沒流體界面處的靜態接觸角、後退接觸角、前進接觸角以及滑動角。
所述組合物可用於乾式微影中或更通常用於浸沒式微影製程中。暴露波長除了受到光阻組合物的限制之外,不受特定限制,且通常是248 nm或低於200 nm如193 nm或EUV波長(例如13.4 nm)。
適用於本發明的聚合物是含水鹼溶性的以使得由所述組合物形成的面塗層可在抗蝕劑顯影步驟中使用含水鹼性顯影劑來移除,所述含水鹼性顯影劑例如是氫氧化四級銨溶液,例如氫氧化四甲基銨(TMAH),通常是0.26 N含水TMAH。適當地,不同的聚合物可以不同的相對量存在。
本發明的面塗層組合物的聚合物可含有各種重複單元,包括例如以下各項中的一種或多種:疏水基團;弱酸基團;強酸基團;分支鏈視情況經取代的烷基或環烷基;氟烷基;或極性基團,如酯基、醚基、羧基或磺醯基。聚合物的重複單元上的特定官能基的存在將視例如聚合物的預期官能度而定。如本文所使用的“經取代”係指使一個或多個氫原子經一個或多個取代基置換,所述取代基例如選自羥基、鹵素(即F、Cl、Br、I)、C1-C10烷基、C6-C10芳基或包含前述物質中的至少一種的組合。
面塗層組合物的聚合物可含有在微影處理期間具有反應性的一種或多種基團,例如可在存在酸及熱的情況下經歷裂解反應的一種或多種光酸不穩定基團,如酸不穩定酯基(例如,如藉由丙烯酸第三丁酯或第三丁基甲基丙烯酸酯、金剛烷基丙烯酸酯的聚合得到的第三丁基酯基)及/或如藉由乙烯基醚化合物的聚合得到的縮醛基。此類基團的存在可使得一種或多種相關聚合物更加可溶於顯影劑溶液中,由此有助於顯影處理期間的顯影性及面塗層的移除。
所述聚合物可有利地進行選擇以調整面塗層的特徵,且每個特徵一般服務於一個或多個目標或功能。此類功能包括例如以下各項中的一種或多種:光阻輪廓調節、面塗層表面調節、減少缺陷以及減少面塗層與光阻層之間的界面混合。
本發明之面塗層組合物包含基質聚合物且通常包括一種或多種額外的添加劑聚合物。基質聚合物是含水鹼溶性的。亦即,基質聚合物可溶於含水鹼如氫氧化四級銨溶液如0.26 N氫氧化四甲基銨(TMAH)中。含水鹼溶性聚合物包含具有以下通式(I)的單體作為聚合單元:R1
選自H、鹵素原子、C1-C3烷基或C1-C3鹵代烷基;R2
獨立地選自經取代或未經取代之C1-C12烷基或經取代或未經取代之C5-C18芳基;X是C2-C6經取代或未經取代之伸烷基,通常是C2-C4且更通常是C2經取代或未經取代之伸烷基;其中X可視情況包含一個或多個環且與R2
一起可視情況形成環;L1
是例如選自視情況經取代之伸烷基如C1到C6伸烷基及視情況經取代之亞芳基如C5-C20亞芳基以及其組合的單鍵或連接基團,以及選自-O-、-S-、-COO-及-CONR-的視情況存在之一個或多個連接部分,其中R選自氫及視情況經取代之C1到C10烷基;且p是1到50的整數,通常是1到20、1到10或最通常為1;且q是1到5的整數,通常是1到2或最通常是1。據信,具有通式(I)的單元允許面塗層組合物溶劑中的基質聚合物的良好溶解度,且可賦予含水鹼顯影劑中的基質聚合物以所需溶解度特徵。此允許在光阻顯影期間進行有效的移除。具有通式(I)的單元在基質聚合物中的存在量以基質聚合物的總聚合單元計通常是1到90 mol%,通常是10到70 mol%、15到60 mol%或20到50 mol%。
用於形成具有通式(I)的聚合單元的示例性合適單體包括以下各者: 其中p是1到50的整數。
基質聚合物通常進一步包含額外類型的聚合單元以進一步賦予基質聚合物以所需特性,例如配方及顯影劑溶解度。合適的單元類型包括例如一個或多個具有通式(II)及/或具有通式(III)的重複單元:其中:R3
及R5
獨立地表示H、鹵素原子、C1-C3烷基、C1-C3鹵代烷基,通常H或甲基;R4
表示視情況經取代之直鏈、分支鏈、環狀或非環狀C1-C20烷基,通常C1-C12烷基;L2
表示例如選自視情況經取代之脂族物如C1-C6伸烷基及視情況取代之芳族物如C5-C20芳族物、烴以及其組合的單鍵或多價連接基團,以及選自-O-、-S-、-COO-及-CONR-的視情況存在之一個或多個連接部分,其中R選自氫及視情況經取代之C1到C10烷基;且n是1到5的整數,通常是1。
據信具有通式(II)的單元允許基質聚合物在用於面塗層組合物的溶劑中具有良好的溶解度。因為其高極性性質,具有通式(III)的單元可賦予含水鹼顯影劑中的基質聚合物以所需溶解度特徵。此允許在光阻顯影期間進行有效的移除。
具有通式(II)之單元在基質聚合物中的存在量以基質聚合物的總聚合單元計通常是1到90 mol%,更通常20到60 mol%或35到50 mol%。具有通式(III)的單元在基質聚合物中的存在量以基質聚合物的總聚合單元計通常是1到90 mol%,更通常5到40 mol%或15到30 mol%。
用於形成具有通式(II)的單元的示例性合適單體包括以下各者: 。
用於具有通式(III)的單元的示例性合適單體包括以下各者: 。
基質聚合物可包括如本文所描述的一種或多種額外類型的單元。基質聚合物可例如包括含有磺醯胺基(例如-NHSO2
CF3
)、氟烷基及/或氟醇基(例如-C(CF3
)2
OH)的單元以增強聚合物的顯影劑溶解速率。若使用額外類型的單元,則其在基質聚合物中的存在量以基質聚合物的總聚合單元計通常是1到40 mol%。
基質聚合物應提供足夠高的顯影劑溶解速率以降低由於例如微橋接所致的整體缺陷率。用於基質聚合物的典型的顯影劑溶解速率大於300奈米/秒,較佳大於1000奈米/秒且更佳大於3000奈米/秒。
基質聚合物較佳具有高於表面活性聚合物表面能的表面能且較佳地基本上不可與表面活性聚合物混溶,從而使表面活性聚合物與基質聚合物相分離且遠離面塗層/光阻層界面遷移至面塗層的上表面上。基質聚合物的表面能通常是30到60 mN/m。
根據本發明的示例性基質聚合物包括由如上所描述的具有通式(I)的單體形成的均聚物及如下的共聚物: 。
基質聚合物在所述組合物中的存在量以面塗層組合物的總固體計通常是70到99 wt%,更通常85到95 wt%。基質聚合物的重均分子量Mw通常小於400,000 Da,例如1000到50,000 Da或2000到25,000 Da。
本發明的面塗層組合物可進一步包含表面活性聚合物。表面活性聚合物的表面能通常低於基質聚合物及所述組合物中的其他聚合物的表面能。在浸沒式微影製程的情況下,表面活性聚合物可改進面塗層/浸沒流體界面處的表面特性。具體而言,表面活性聚合物有益地可提供關於水的所需表面特性,例如面塗層/浸沒流體界面處的改進的靜態接觸角(SCA)、後退接觸角(RCA)、前進接觸角(ACA)以及滑動角(SA)中的一個或多個。具體而言,表面活性聚合物可允許較高的RCA,此可允許較快的掃描速度及增加的處理吞吐量(process throughput)。呈乾燥狀態的面塗層組合物層的水後退接觸角通常是75到90°,且較佳80到90°,且更佳83到90°,例如83到88°。短語“呈乾燥狀態”係指以全部面塗層組合物計含有8 wt%或更少的溶劑。
表面活性聚合物較佳是含水鹼溶性的以允許在用含水鹼顯影劑進行顯影期間進行完全移除,所述顯影劑如氫氧化四級銨溶液,例如0.26 N含水TMAH顯影劑。表面活性聚合物較佳不含羧酸基團,因為此類基團可能減小聚合物的後退接觸角特性。
表面活性聚合物具有低於基質聚合物表面能的表面能。表面活性聚合物較佳具有顯著低於基質聚合物以及外塗層組合物中存在的其他聚合物表面能的表面能且基本上不可與其混溶。面塗層組合物以此方式可為自隔離的,其中在塗佈、通常旋塗期間,表面活性聚合物遠離一種或多種其他聚合物遷移到面塗層的上表面上。因此,在浸沒式微影製程的情況下,在面塗層/浸沒流體界面處的面塗層上表面處,所得面塗層富含表面活性聚合物。富含表面活性聚合物的表面區域的厚度通常是一個到兩個或一個到三個單層,或厚度是約10到20 Å。儘管表面活性聚合物的所需表面能將視特定基質聚合物及其表面能而定,但表面活性聚合物表面能通常是15到35 mN/m、較佳18到30 mN/m。表面活性聚合物通常比基質聚合物小5到25 mN/m,較佳比基質聚合物小5到15 mN/m。
表面活性聚合物較佳是氟化的。合適的表面活性聚合物可包括例如彼等包含具有通式(IV)的重複單元及具有通式(V)的重複單元的表面活性聚合物:其中:R6
獨立地表示H、鹵素原子、C1-C3烷基,通常H或甲基;R7
表示直鏈、分支鏈或環狀視情況經取代之C1到C20或C1到C12烷基,通常氟烷基;R7
表示直鏈、分支鏈或環狀C1到C20氟烷基,通常C1到C12氟烷基;L3
表示例如選自視情況經取代之脂族物如C1到C6伸烷基及芳族烴及其組合的多價連接基團,以及選自-O-、-S-、-COO-及-CONR-的視情況存在之一個或多個連接部分,其中R選自氫及視情況經取代的C1到C10烷基,L3
較佳是-C(O)OCH2
-;且n是1到5的整數,通常是1。
據信由具有通式(IV)的單體形成的單元允許表面活性聚合物與所述組合物中的其他聚合物的有效相分離、增強的動態接觸角例如增大的後退角及減小的滑動角。據信由具有通式(V)的單體形成的單元有助於相分離及增強的動態接觸角特性,以及賦予表面活性聚合物以有益的滯後特徵及改進的含水鹼顯影劑中溶解度。
具有通式(IV)的單元在表面活性聚合物中的存在量以表面活性聚合物的總重複單元計通常是1到90 mol%,例如10到40 mol%。具有通式(V)的單元在表面活性聚合物中的存在量以表面活性聚合物的總重複單元計通常是1到90 mol%,例如50到80 mol%。
用於具有通式(IV)的單元的示例性合適單體包括以下各者: 。
用於具有通式(V)的單元的示例性合適單體包括以下各者: 。
表面活性聚合物可包括一個或多個額外的具有通式(III)、通式(IV)的單元及/或額外類型的單元。表面活性聚合物可例如包括一個或多個額外的包含以下各項的單元:含氟基團,如氟化磺醯胺基、氟化醇基、氟化酯基或其組合;或酸不穩定離去基團;或其組合。含氟醇基的單元可存在於表面活性聚合物中以達到增強顯影劑溶解度或允許增強的動態接觸角例如增大的後退角及減小的滑動角以及改進顯影劑親和力及溶解度的目的。如果使用額外類型的單元,則其在表面活性聚合物中的存在量以表面活性聚合物計通常是1到70 mol%。
適用作表面活性聚合物的示例性聚合物包括例如以下各者: 。
用於浸沒式微影的表面活性聚合物的含量下限值一般由防止光阻組分濾出的需要指定。表面活性聚合物在所述組合物中的存在量以面塗層組合物的總固體計通常是1到30 wt%,更通常3到20 wt%或5到15 wt%。表面活性聚合物的重均分子量通常小於400,000,較佳5000到50,000,更佳5000到25,000。
面塗層組合物中可存在視情況選用之額外的聚合物。舉例而言,除了基質聚合物及表面活性聚合物之外,還可提供添加劑聚合物以達到調整抗蝕劑特點輪廓及/或控制抗蝕劑頂部缺失的目的。添加劑聚合物通常可與基質聚合物混溶且基本上不可與表面活性聚合物混溶以使得表面活性聚合物可遠離面塗層/光阻界面從其他聚合物中自隔離到面塗層表面上。
用於配製且澆鑄面塗層組合物的典型的溶劑材料是溶解或分散面塗層組合物的組分但不明顯地溶解底層光阻層的任何溶劑材料。總溶劑較佳是基於有機物的(即大於50 wt%有機物),通常是90到100 wt%、更通常99到100 wt%或100 wt%有機溶劑,不包括例如以總溶劑計可以0.05到1 wt%的量存在的殘留的水或其他污染物。較佳地,不同溶劑例如兩種、三種或更多種溶劑的混合物可用於實現隔離表面活性聚合物與所述組合物中的一種或多種其他聚合物的有效相分離。溶劑混合物還可有效地降低配製物的黏度,這使得分配體積減小。
在示例性態樣中,可在本發明的面塗層組合物中使用雙溶劑系統或三溶劑系統。較佳的溶劑系統包括主要溶劑及附加溶劑且可包括較稀溶劑。關於面塗層組合物的非溶劑組分,主要溶劑通常表現出極佳的溶解度特徵。儘管主要溶劑的所需沸點將視溶劑系統的其他組分而定,但所述沸點通常小於附加溶劑的沸點,且沸點通常是120℃到140℃,如約130℃。合適的主要溶劑包括例如C4到C10單價醇,如正丁醇、異丁醇2-甲基-1-丁醇、異戊醇、2,3-二甲基-1-丁醇、4-甲基-2-戊醇、異己醇、異庚醇、1-辛醇、1-壬醇及1-癸醇以及其混合物。主要溶劑的存在量以溶劑系統計通常是30到80 wt%。
附加溶劑可促進表面活性聚合物與面塗層組合物中的一種或多種其他聚合物之間的相分離以促進自隔離面塗層結構。另外,較高沸點的附加溶劑可降低塗佈期間的末端乾燥效應。附加溶劑通常具有比溶劑系統的其他組分沸點更高的沸點。儘管附加溶劑的所需沸點將視溶劑系統的其他組分而定,但沸點通常是170℃到200℃,如約190℃。合適的附加溶劑包括例如羥基烷基醚,如具有下式的那些羥基烷基醚: R11
-O-R12
-O-R13
-OH 其中R11
是視情況經取代的C1到C2烷基且R12
及R13
獨立地選自視情況經取代的C2到C4烷基及此類羥基烷基醚的混合物,包括異構體混合物。示例性羥基烷基醚包括二烷基二醇單烷基醚及其異構體,例如二乙二醇單甲醚、二丙二醇單甲醚、三丙二醇單甲醚、其異構體及其混合物。附加溶劑的存在量以溶劑系統計通常是3到15 wt%。
較稀溶劑可用於降低黏度並在較低的分配體積下改進塗層覆蓋率。較稀溶劑通常是相對於主要溶劑的用於所述組合物的非溶劑組分的較貧溶劑。儘管較稀溶劑的所需沸點將視溶劑系統的其他組分而定,但沸點通常是140℃到180℃,如約170℃。合適的較稀溶劑包括例如烷烴,如C8到C12正烷烴,例如正辛烷、正癸烷及十二烷;其異構體以及其異構體的混合物;及/或烷基醚,如具有式R14
-O-R15
的那些烷基醚,其中R14
及R15
獨立地選自C2到C8烷基、C2到C6烷基及C2到C4烷基。烷基醚基團可是直鏈或分支鏈的及對稱的或不對稱的。特別合適的烷基醚包括例如異丁基醚、異戊基醚、異丁基異己基醚及其混合物。其他合適的較稀溶劑包括酯溶劑,例如由通式(VII)表示的那些酯溶劑:
其中:R16
及R17
獨立地選自C3到C8烷基;且合在一起的R16
及R17
中的碳原子總數大於6。合適的此類酯溶劑包括例如戊酸丙酯、戊酸異丙酯、3-甲基丁酸異丙酯、2-甲基丁酸異丙酯、特戊酸異丙酯、異丁酸異丁酯、異丁酸2-甲基丁酯、2-甲基丁酸2-甲基丁酯、2-甲基己酸2-甲基丁酯、庚酸2-甲基丁酯、庚酸己酯、正丁酸正丁酯、正丁酸異戊酯及異戊酸異戊酯。如果使用較稀溶劑,則其存在量以溶劑系統計通常是10到70 wt%。
特別較佳的溶劑系統包括4-甲基-2-戊醇、二丙二醇甲醚及異丁酸異丁酯。儘管示例性溶劑系統已經關於兩組分系統及三組分系統有所描述,但應該清楚,可使用額外的溶劑。舉例而言,可採用一種或多種額外的主要溶劑、較稀溶劑、附加溶劑及/或其他溶劑。
面塗層組合物可包含一種或多種其他視情況存在之組分。舉例而言,所述組合物可包括用於增強抗反射特性的光化染料及對比染料、抗條紋劑等中的一種或多種。如果使用此類視情況存在之添加劑,則其通常以外塗層組合物的總固體計以微量如0.1到10 wt%存在於所述組合物中。
面塗層組合物中包括酸生成劑化合物如光酸生成劑(PAG)及/或熱酸生成劑(TAG)化合物可是有益的。合適的光酸生成劑在化學增幅型光阻領域中是已知的,且包括例如:鎓鹽,例如三苯基鋶三氟甲烷磺酸鹽、(對第三丁氧基苯基)二苯基鋶三氟甲烷磺酸鹽、三(對第三丁氧基苯基)鋶三氟甲烷磺酸鹽、三苯基鋶對甲苯磺酸鹽;硝基苄基衍生物,例如2-硝基苄基-對甲苯磺酸鹽、2,6-二硝基苄基-對甲苯磺酸鹽及2,4-二硝基苄基-對甲苯磺酸鹽;磺酸酯,例如1,2,3-三(甲烷磺醯基氧基)苯、1,2,3-三(三氟甲烷磺醯基氧基)苯及1,2,3-三(對甲苯磺醯基氧基)苯;重氮甲烷衍生物,例如雙(苯磺醯基)重氮甲烷、雙(對甲苯磺醯基)重氮甲烷;乙二肟衍生物,例如雙-O-(對甲苯磺醯基)-α-二甲基乙二肟及雙-O-(正丁烷磺醯基)-α-二甲基乙二肟;N-羥基醯亞胺化合物的磺酸酯衍生物,例如N-羥基琥珀醯亞胺甲磺酸酯、N-羥基琥珀醯亞胺三氟甲磺酸酯;及含鹵素的三嗪化合物,例如2-(4-甲氧基苯基)-4,6-雙(三氯甲基)-1,3,5-三嗪及2-(4-甲氧基萘基)-4,6-雙(三氯甲基)-1,3,5-三嗪。可使用此類PAG中的一種或多種。
合適的熱酸生成劑包含例如甲苯磺酸硝基苄酯,如甲苯磺酸2-硝基苄酯、甲苯磺酸2,4-二硝基苄酯、甲苯磺酸2,6-二硝基苄酯、甲苯磺酸4-硝基苄酯;苯磺酸酯,如4-氯苯磺酸2-三氟甲基-6-硝基苄酯、4-硝基苯磺酸2-三氟甲基-6-硝基苄酯;酚醛磺酸酯,如苯基、4-甲氧基苯磺酸酯;有機酸的烷基銨鹽,如10-樟腦磺酸、三氟甲基苯磺酸、全氟丁烷磺酸的三乙銨鹽;及特定的鎓鹽。各種芳族(蒽、萘或苯衍生物)磺酸胺鹽可用作TAG,包括美國專利第3,474,054號、第4,200,729號、第4.251,665號及第5,187,019號中所公開的那些鹽。TAG的實例包括由美國康涅狄格州諾沃克的King Industries以NACURE™、CDX™及K-PURE™名稱例如NACURE 5225、CDX-2168E、K-PURE™2678及K-PURE™2700出售的那些TAG。可使用此類TAG中的一種或多種。
如果採用一種或多種酸生成劑,則其可以相對較少量例如以所述組合物的總固體計0.1到8 wt%用於面塗層組合物中。一種或多種酸生成劑化合物的這種使用可有利地影響在底層抗蝕劑層中圖案化的顯影圖像的微影性能,特別是分辨率。
由所述組合物形成的面塗層的折射率通常在193 nm下是1.4或更大,較佳在193 nm下是1.47或更大。折射率可通過改變基質聚合物、表面活性聚合物、添加劑聚合物或外塗層組合物的其他組分的組成來調整。舉例而言,增加外塗層組合物中的有機內容物的相對量可提供層的增加的折射率。較佳的外塗層組合物層在目標暴露波長下的折射率在浸沒流體的折射率與光阻的折射率之間。
光阻面塗層組合物可遵照已知程序來製備。舉例而言,所述組合物可通過將所述組合物的固體組分溶解於溶劑組分中來製備。所述組合物的所需總固體含量將視如所述組合物中的特定聚合物及所需最終層厚度的因素而定。外塗層組合物的固體含量以所述組合物的總重量計較佳是1到10 wt%,更佳1到5 wt%。全部組合物的黏度通常是1.5到2厘泊(cp)。光阻
適用於本發明的光阻組合物包括包含酸敏感性基質聚合物的化學增幅型光阻組合物,意味著作為光阻組合物層的一部分,聚合物及組合物層經歷顯影劑中溶解度的變化,這是因為其與由光酸生成劑生成的酸進行反應,隨後進行軟烘烤,暴露於激活輻射及後暴露烘烤。抗蝕劑配製物可是正作用的或負作用的,但通常是正作用的。在正型光阻中,溶解度變化通常發生在基質聚合物中的酸不穩定基團如光酸不穩定酯或縮醛基在暴露於激活輻射及熱處理時經歷光酸促進的去保護反應之時。適用於本發明的合適的光阻組合物是市售的。
對於在如193 nm的波長下的成像,基質聚合物通常基本上不含(例如小於15莫耳%)或完全不含苯基、苄基或其他芳族基團,其中此類基團高度吸收輻射。歐洲申請EP930542A1及美國專利第第6,692,888號及第6,680,159號中揭示基本上不含或完全不含芳族基團的合適的聚合物,其全部都是Shipley Company的。較佳的酸不穩定基團包括例如含有共價連接到基質聚合物的酯的羧基氧的叔非環烷基碳(例如第三丁基)或叔脂環族碳(例如甲基金剛烷基)的縮醛基或酯基。
合適的基質聚合物進一步包括含有(烷基)丙烯酸酯單元的聚合物,較佳包括酸不穩定的(烷基)丙烯酸酯單元,如丙烯酸第三丁酯、甲基丙烯酸第三丁酯、丙烯酸甲基金剛烷酯、甲基丙烯酸甲基金剛烷酯、丙烯酸乙基葑酯、甲基丙烯酸乙基葑酯等以及其他非環烷基及脂環族(烷基)丙烯酸酯。例如美國專利。第6,057,083號、歐洲公開申請EP01008913A1及EP00930542A1以及美國專利第6,136,501號中描述了此類聚合物。其他合適的基質聚合物包括例如那些含有非芳族環烯烴(內環雙鍵)的聚合單元的基質聚合物,如視情況經取代的降冰片烯,例如美國專利第5,843,624號及第6, 048,664號中描述了聚合物。再其他合適的基質聚合物包括含有聚合酐單元、特別地聚合馬來酸酐及/或衣康酸酐單元的聚合物,如公開於歐洲公開申請EP01008913A1及美國專利第6,048,662號中。
還適用作基質聚合物的是含有含雜原子、特別地氧及/或硫的重複單元(但酸酐除外,即所述單元不含酮環原子)的樹脂。雜脂環單元可稠合到聚合物主鏈,且可包含如通過聚合降冰片烯基團得到的稠合碳脂環單元及/或如通過聚合馬來酸酐或衣康酸酐得到的酸酐單元。PCT/US01/14914及美國專利第6,306,554號中揭示此類聚合物。其他合適的含雜原子基團的基質聚合物包括含有經一個或多個含雜原子(例如氧或硫)的基團例如羥基萘基取代的聚合碳環芳基單元的聚合物,如揭示於美國專利第7,244,542號中。
上述基質聚合物中的兩種或更多種的摻合物可適當地用於光阻組合物中。
用於光阻組合物中的合適的基質聚合物是市售的,且可由熟習此項技術者容易地製備。基質聚合物以足以使抗蝕劑的暴露塗層可在合適的顯影劑溶液中顯影的量存在於抗蝕劑組合物中。通常,以抗蝕劑組合物的總固體計,基質聚合物在所述組合物中的存在量通常是50到95 wt%。基質聚合物的重均分子量Mw
通常小於100,000,例如5000到100,000,更通常5000到15,000。
光阻組合物進一步包含光活性組分,如以足以在暴露於激活輻射後在所述組合物的塗層中產生潛像的量採用的光酸生成劑(PAG)。舉例而言,以光阻組合物的總固體計,光酸生成劑的存在量應適當地是約1到20 wt%。通常,與非化學增幅型材料相比,較少量的PAG適用於化學增幅型抗蝕劑。合適的PAG在化學增幅型光阻領域中是已知的,且包括例如以上關於面塗層組合物所描述之彼等物質。
適用於光阻組合物的溶劑包括例如:二醇醚,如2-甲氧基乙醚(二乙二醇二甲醚)、乙二醇單甲醚及丙二醇單甲醚;丙二醇單甲醚乙酸酯;乳酸酯,如乳酸甲酯及乳酸乙酯;丙酸酯,如丙酸甲酯、丙酸乙酯、乙基乙氧基丙酸酯及異丁酸甲基-2-羥酯;溶纖劑酯,如甲基溶纖劑乙酸酯;芳族烴,如甲苯及二甲苯;及酮,如丙酮、甲基乙基酮、環己酮及2-庚酮。溶劑的摻合物,如以上所描述的溶劑中的兩種、三種或更多種的摻合物亦合適。以光阻組合物的總重量計,溶劑在所述組合物中的存在量通常是90到99 wt%,更通常95到98 wt%。
光阻組合物亦可包括其他視情況存在之材料。舉例而言,所述組合物可包括光化染料及對比染料、抗條紋劑、增塑劑、增速劑、敏化劑等中的一種或多種。若使用此類視情況存在之添加劑,則其通常以光阻組合物的總固體計以微量如0.1到10 wt%存在於所述組合物中。
抗蝕劑組合物的較佳的視情況存在之添加劑是添加的鹼。合適的鹼為此項技術中已知且包含例如直鏈及環狀醯胺及其衍生物,如N,N-雙(2-羥乙基)特戊醯胺、N,N-二乙基乙醯胺、N1,N1,N3,N3-四丁基丙二醯胺、1-甲基氮雜環庚烷-2-酮、1-烯丙基氮雜環庚烷-2-酮及1,3-二羥基-2-(羥甲基)丙醯-2-基氨基甲酸第三丁酯;芳族胺,如吡啶及二第三丁基吡啶;脂族胺,如三異丙醇胺、正第三丁基二乙醇胺、雙(2-乙醯氧基-乙基) 胺、2,2',2'',2'''-(乙烷-1,2-二基雙(氮烷三基))四乙醇及2-(二丁氨基)乙醇, 2,2',2''-氮基三乙醇;環狀脂族胺,如1-(第三丁氧基羰基)-4-羥基哌啶、1-吡咯烷羧酸第三丁酯、2-乙基-1H-咪唑-1-羧酸第三丁酯、哌嗪-1,4-二羧酸二第三丁酯及N (2-乙醯氧基-乙基)嗎啉。添加的鹼適當地以相對較小之量例如以光阻組合物的總固體計0.01到5 wt%、較佳0.1到2 wt%使用。
光阻可遵照已知程序來製備。舉例而言,可藉由將光阻的固體組分溶解於溶劑組分中來將抗蝕劑製備為塗層組合物。光阻的所需總固體含量將視如所述組合物中的特定聚合物、最終層厚度及暴露波長的因素而定。光阻的固體含量以光阻組合物的總重量計通常在1到10 wt%、更通常2到5 wt%之間變化。微影處理
液體光阻組合物可藉由如旋塗、浸漬、滾塗或其他常規的塗佈技術且通常是旋塗來施用於基板。當旋塗時,塗料溶液的固體含量可基於所利用的特定旋轉設備、溶液黏度、旋轉器速度以及允許旋轉的時間量來進行調節以得到所期望的膜厚度。
用於本發明方法之光阻組合物以用於施用光阻的習知方式適當地施用於基板。舉例而言,可將所述組合物施用於矽晶圓或塗佈有一個或多個層且具有表面特點的矽晶圓上以產生微處理器或其他集成電路組件。亦可適當地採用鋁-氧化鋁、砷化鎵、陶瓷、石英、銅、玻璃基板及其類似物。光阻組合物通常施用於抗反射層例如有機抗反射層上。
本發明的面塗層組合物可藉由如以上參考光阻組合物所描述的任何合適的方法且通常是旋塗來施用於光阻組合物上。
在將光阻塗佈到表面上之後,可將其加熱(軟烘烤)以移除溶劑直到通常光阻塗層是無黏性的,或可在施用面塗層組合物之後乾燥光阻層且在單一熱處理步驟中將來自光阻組合物層及面塗層組合物層的溶劑基本上移除。
接著使具有外塗佈面塗層的光阻層經圖案化光罩暴露以針對光阻的光活性組分激活的輻射。暴露通常在浸沒式掃描儀情況下進行,但可替代地可在乾燥(非浸沒)暴露工具情況下進行。
在暴露步驟期間,光阻組合物層暴露於圖案化激活輻射,且視暴露工具及光阻組合物的組分而定暴露能通常在約1到100 mJ/cm2
範圍內。本文對將光阻組合物暴露於針對光阻激活的輻射的提及表明輻射能夠在光阻中形成潛像,如藉由引起光活性組分的反應進行,例如由光酸生成劑化合物產生光酸。
光阻組合物(若為光敏性的,及面塗層組合物)通常藉由短暴露波長來光活化,例如波長小於300 nm如248 nm、193 nm及EUV波長如13.5 nm的輻射。暴露之後,通常在約70℃到約160℃範圍內的溫度下烘烤所述組合物層。
此後,使膜顯影,通常藉由用例如選自以下各項的含水鹼顯影劑處理:氫氧化四級銨溶液,如氫氧化四烷基銨溶液,通常0.26 N氫氧化四甲基銨;胺溶液,如乙胺、正丙胺、二乙胺、二正丙胺、三乙胺或甲基二乙胺;醇胺,如二乙醇胺或三乙醇胺;及環胺,如吡咯或吡啶。一般而言,顯影依照此項技術公認之程序。
在光阻層顯影之後,可例如根據此項技術中已知的程序藉由化學蝕刻或鍍覆缺乏抗蝕劑的基板區域,在缺乏抗蝕劑之彼等區域上對經顯影基板進行選擇性處理。在此類處理之後,可使用已知剝離程序移除基板上剩餘的抗蝕劑。
以下非限制性實例說明了本發明。 實例分子量測定:
在配備有折射率偵測器Waters Alliance System GPC上藉由凝膠滲透色譜法(GPC)量測聚合物的數量及重均分子量Mn及Mw以及多分散性(PDI)值(Mw/Mn)。將樣品溶解於約1 mg/mL濃度的HPCL級THF中,且經四個Shodex™柱(KF805、KF804、KF803及KF802)注射。維持1 mL/min流速及35℃溫度。用窄分子量PS標準(EasiCal PS-2,Polymer Laboratories, Inc.)校準所述柱。溶解速率( DR )量測:
在TEL ACT-8晶圓軌跡上,在120℃下使8吋矽晶圓塗有底漆HMDS持續30秒,接著使用1500 rpm轉速塗佈有含有含14 wt%固體的4-甲基-2-戊醇的基質聚合物溶液,且在90℃下軟烘烤晶圓60秒。膜厚度是在Thermawave Optiprobe膜厚度量測工具上進行量測且通常是約400 nm。在LTG ARM-808EUV溶解速率監測器上在470 nm入射波長下使用0.001秒的資料收集間隔量測MF CD-26顯影劑(0.26 N含水氫氧化四甲基銨)中的溶解速率。樹脂製備:
如下所述,使用以下單體製備基質聚合物P1到P38、CP1到CP3及表面活性聚合物X1到X2。 面塗層聚合物 P1 合成:
藉由將10 g丙二醇單甲醚(PGME)、7.70 g單體A1、2.30 g單體C1及0.50 g Wako V-601引發劑在容器中組合且攪動混合物以溶解組分來製備進料溶液。將8.6 g PGME引入反應容器中且用氮氣吹掃容器30分鐘。接著伴以攪動將反應容器加熱到95℃。接著將進料溶液引入反應容器中且在1.5小時內進料。伴以攪動使反應容器再維持在95℃下三個小時,且接著使其冷卻到室溫。藉由將反應混合物逐滴添加到1/5甲醇/水(v/v)中來沈澱聚合物,過濾收集,且真空乾燥。得到呈白色固體粉末狀的聚合物P1 [產量:8.75 g,Mw=10.6 kDa,PDI=1.9]。面塗層聚合物 P2 到 P38 及 CP1 到 CP3 (比較)合成:
使用類似的程序製備樹脂P2到P38及CP1到CP3(比較),且組成如表1中所述。添加劑聚合物 X1 合成:
藉由將9.1 g丙二醇單甲醚(PGME)、14.24 g單體B9、0.76 g單體B10及0.54 g Wako V-601引發劑在容器中組合且攪動混合物以溶解組分來製備進料溶液。將11.1 g PGME引入反應容器中且用氮氣吹掃容器30分鐘。接著伴以攪動將反應容器加熱至95℃。接著將進料溶液引入反應容器中且在1.5小時內進料。伴以攪動使反應容器在95℃下再維持三個小時,且接著使其冷卻至室溫。藉由將反應混合物逐滴添加到1/4甲醇/水(v/v)中來沈澱聚合物,過濾收集,且真空乾燥。得到呈白色固體粉末狀之聚合物X1 [產量:11.80 g,Mw=45.5 kDa,PDI=3.0]。添加劑聚合物 X2 合成:
使用類似的程序製備樹脂X2,且其組成如表1中所述。 表1
面塗層添加劑:
使用以下小分子添加劑製備如下所描述的面塗層組合物。 面塗層組合物製備:
藉由將表2中所示的組分添加到溶劑系統中來配製面塗層組合物,所述溶劑系統包括4-甲基-2-戊醇、異丁酸異丁酯及二丙二醇甲醚,其量如表2中所述。將每種混合物經0.2 μm PTFE盤過濾。 表2
Comp=比較實例;4M2P=4-甲基-2-戊醇;IBIB=異丁酸異丁酯;DPM=二丙二醇甲醚。 塗層缺陷測試:
在TEL Lithius軌跡上,使用90℃/60秒的SB將面塗層塗佈到裸300 mm原生矽晶圓上到385Å厚度。在KLA-Tencor Surfscan SP2晶圓表面偵測工具上偵測經塗佈膜。 剝離量測:
在TEL ACT-8軌跡上,在120℃下使8''矽晶圓塗有底漆HMDS持續30秒且隨後使用90℃/60秒的SB旋塗有385 Å面塗層。將經塗佈晶圓完全浸入蒸餾水中且在5秒、30秒、1分鐘、10分鐘、30分鐘及1小時之後視覺上檢查膜分層。在偵測時間內偶爾手動搖盪容納晶圓及水浴的容器以平緩地攪動溶液。認為在1小時之後不顯示膜分層的面塗層在剝離測試中合格。認為在1小時之時或在1小時之前顯示分層之彼等面塗層不合格。 浸沒式微影及圖案化塌陷外邊距(PCM)量測:
用TEL Lithius 300 mm晶圓軌跡及ASML 1900i浸沒式掃描儀在1.3 NA、0.98/0.71內部/外部σ下進行浸沒式微影,且用XY極化進行環形照明。使300 mm晶圓塗佈有800 Å AR™40A第一底部抗反射塗層(BARC)(陶氏化學公司(The Dow Chemical Company))且在205℃下固化60秒。隨後將400 Å AR104 BARC塗佈在第一BARC上且在175℃下固化60秒。將940 Å EPIC™ 2389光阻(陶氏化學公司)塗佈在BARC堆上且在100℃下軟烘烤60秒。將385 Å面塗層組合物層塗佈在光阻層上且在90℃下軟烘烤60秒。經具有在最佳焦點下的55 nm 1:1線-空間圖案且增加劑量的光罩暴露晶圓且隨後在90℃下暴露後烘烤(PEB)60秒。PEB之後,在0.26 N含水TMAH顯影劑中將晶圓顯影12秒,用蒸餾水沖洗且旋轉乾燥。在Hitachi CG4000 CD-SEM上進行度量。將圖案塌陷CD(PCM)定義為最小臨界尺寸(CD),在此之下線保持靜止且表現為直線。示例性及比較面塗層組合物的性能資料顯示於表3中。 表3
Claims (10)
- 一種光阻面塗層組合物,其包含: 包含具有以下通式(I)的單體作為聚合單元的含水鹼溶性聚合物:其中:R1 選自H、鹵素原子、C1-C3烷基或C1-C3鹵代烷基;R2 獨立地選自經取代或未經取代之C1-C12烷基或經取代或未經取代之C5-C18芳基;X是C2-C6經取代或未經取代之伸烷基;其中X可視情況包含一個或多個環且與R2 一起可視情況形成環;L1 是單鍵或連接基團;p是1到50的整數;且q是1到5的整數;以及 溶劑。
- 如申請專利範圍第1項所述的光阻面塗層組合物,其中p是1到5的整數。
- 如申請專利範圍第1項所述的光阻面塗層組合物,其中在通式(I)中,L1 是單鍵,X是-CH2 CH2 -,p是1且q是1。
- 如申請專利範圍第1項至第3項中任一項所述的光阻面塗層組合物,其中所述含水鹼聚合物進一步包含具有以下通式(II)的單體作為聚合單元:其中:R3 選自H、鹵素原子、C1-C3烷基或C1-C3鹵代烷基;且R4 選自視情況經取代之直鏈、分支鏈、環狀或非環狀C1至C20烷基。
- 如申請專利範圍第1項至第4項中任一項所述的光阻面塗層組合物,其中所述含水鹼聚合物進一步包含具有以下通式(III)的單體作為聚合單元:其中:R5 是H、鹵素原子、C1-C3烷基或C1-C3鹵代烷基;L2 表示單鍵或多價連接基團;且n是1到5的整數。
- 如申請專利範圍第1項至第5項中任一項所述的光阻面塗層組合物,其中所述溶劑是基於有機物的溶劑。
- 如申請專利範圍第1項至第6項中任一項所述的光阻面塗層組合物,其進一步包含不同於所述含水鹼溶性聚合物的含氟聚合物。
- 如申請專利範圍第7項所述的光阻面塗層組合物,其中以所述光阻面塗層組合物的總固體計,所述含水鹼溶性聚合物的存在量是70到99 wt%且所述含氟聚合物在所述光阻面塗層組合物中的存在量是1到30 wt%。
- 一種經塗佈基板,其包含: 基板上的光阻層;及 所述光阻層上的由如申請專利範圍第1項至第8項中任一項所述的光阻面塗層組合物形成的面塗層。
- 一種處理光阻組合物的方法,其包含: (a) 將光阻組合物施用於基板上以形成光阻層; (b) 在所述光阻層上施用如申請專利範圍第1項至第8項中任一項所述的光阻面塗層組合物以形成面塗層; (c) 使所述面塗層及所述光阻層暴露於激活輻射;且 (d) 使所述經暴露面塗層及光阻層與顯影劑接觸以形成抗蝕劑圖案。
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