PH12014501731A1 - Low dielectric photoimageable compositions and electronic devices made therefrom - Google Patents

Low dielectric photoimageable compositions and electronic devices made therefrom

Info

Publication number
PH12014501731A1
PH12014501731A1 PH12014501731A PH12014501731A PH12014501731A1 PH 12014501731 A1 PH12014501731 A1 PH 12014501731A1 PH 12014501731 A PH12014501731 A PH 12014501731A PH 12014501731 A PH12014501731 A PH 12014501731A PH 12014501731 A1 PH12014501731 A1 PH 12014501731A1
Authority
PH
Philippines
Prior art keywords
electronic devices
made therefrom
devices made
low dielectric
photoimageable compositions
Prior art date
Application number
PH12014501731A
Other languages
English (en)
Other versions
PH12014501731B1 (en
Inventor
Zhang Ruzhi
Kim Jihoon
Bharatkumar K Patel
Wolfer Elizabeth
Original Assignee
Az Electronic Mat S A R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Mat S A R L filed Critical Az Electronic Mat S A R L
Publication of PH12014501731B1 publication Critical patent/PH12014501731B1/en
Publication of PH12014501731A1 publication Critical patent/PH12014501731A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
PH12014501731A 2012-02-09 2014-07-31 Low dielectric photoimageable compositions and electronic devices made therefrom PH12014501731A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/369,809 US8871425B2 (en) 2012-02-09 2012-02-09 Low dielectric photoimageable compositions and electronic devices made therefrom
PCT/IB2013/000170 WO2013117989A1 (en) 2012-02-09 2013-02-08 Low dielectric photoimageable compositions and electronic devices made therefrom

Publications (2)

Publication Number Publication Date
PH12014501731B1 PH12014501731B1 (en) 2014-11-17
PH12014501731A1 true PH12014501731A1 (en) 2014-11-17

Family

ID=47913498

Family Applications (1)

Application Number Title Priority Date Filing Date
PH12014501731A PH12014501731A1 (en) 2012-02-09 2014-07-31 Low dielectric photoimageable compositions and electronic devices made therefrom

Country Status (9)

Country Link
US (1) US8871425B2 (enExample)
EP (1) EP2812399B1 (enExample)
JP (1) JP5941559B2 (enExample)
KR (1) KR101904582B1 (enExample)
CN (1) CN104093784B (enExample)
PH (1) PH12014501731A1 (enExample)
SG (1) SG11201403059WA (enExample)
TW (1) TWI544280B (enExample)
WO (1) WO2013117989A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6213270B2 (ja) * 2014-01-31 2017-10-18 住友化学株式会社 Uv−led用ポリシルセスキオキサン系封止材組成物及びそのための溶媒の使用
CN104282250B (zh) * 2014-10-24 2016-08-31 深圳市华星光电技术有限公司 Tft 中mis 结构设计的控制方法及系统
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
US10254650B2 (en) 2016-06-29 2019-04-09 Honeywell International Inc. Low temperature SC1 strippable oxysilane-containing coatings
US20190211259A1 (en) 2016-08-22 2019-07-11 Merck Patent Gmbh Mixture for optical devices
US20210292644A1 (en) 2016-09-13 2021-09-23 Merck Patent Gmbh Light luminescent particle
US10544330B2 (en) * 2017-01-20 2020-01-28 Honeywell International Inc. Gap filling dielectric materials
JP2021005625A (ja) * 2019-06-26 2021-01-14 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH ゲート絶縁膜形成組成物

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US4442197A (en) 1982-01-11 1984-04-10 General Electric Company Photocurable compositions
ATE37242T1 (de) 1984-02-10 1988-09-15 Ciba Geigy Ag Verfahren zur herstellung einer schutzschicht oder einer reliefabbildung.
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
JPH06148895A (ja) 1992-11-06 1994-05-27 Toray Ind Inc 感光性樹脂組成物およびこれを用いたパターン形成方法
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
US5962067A (en) * 1997-09-09 1999-10-05 Lucent Technologies Inc. Method for coating an article with a ladder siloxane polymer and coated article
TW588072B (en) 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
JP2004165613A (ja) * 2002-06-03 2004-06-10 Shipley Co Llc 電子デバイスの製造
US7041748B2 (en) * 2003-01-08 2006-05-09 International Business Machines Corporation Patternable low dielectric constant materials and their use in ULSI interconnection
JP5102428B2 (ja) * 2003-11-25 2012-12-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 導波路組成物およびこれから形成された導波路
EP1586603B1 (en) * 2004-04-14 2007-06-13 Rohm and Haas Electronic Materials LLC Waveguide compositions and waveguides formed therefrom
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
CN101278025A (zh) * 2005-09-29 2008-10-01 陶氏康宁公司 从金属基底中剥离高温膜和/或器件的方法
US8013077B2 (en) * 2007-03-02 2011-09-06 Fujifilm Corporation Insulating film forming composition and production method of insulating film
US7754510B2 (en) 2007-04-02 2010-07-13 Xerox Corporation Phase-separated dielectric structure fabrication process
JP2009199061A (ja) * 2007-11-12 2009-09-03 Rohm & Haas Electronic Materials Llc オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
TWI384025B (zh) * 2009-04-27 2013-02-01 Ind Tech Res Inst 聚乙烯醇膜組成物及包含其之偏光板
US8431670B2 (en) 2009-08-31 2013-04-30 International Business Machines Corporation Photo-patternable dielectric materials and formulations and methods of use
US8196655B2 (en) * 2009-08-31 2012-06-12 Halliburton Energy Services, Inc. Selective placement of conformance treatments in multi-zone well completions
US8389663B2 (en) * 2009-10-08 2013-03-05 International Business Machines Corporation Photo-patternable dielectric materials curable to porous dielectric materials, formulations, precursors and methods of use thereof
JP2011154214A (ja) * 2010-01-27 2011-08-11 Jsr Corp ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン
JP5544239B2 (ja) * 2010-07-29 2014-07-09 富士フイルム株式会社 重合性組成物
WO2012133617A1 (ja) * 2011-03-30 2012-10-04 日本ゼオン株式会社 樹脂組成物および半導体素子基板

Also Published As

Publication number Publication date
JP5941559B2 (ja) 2016-06-29
US8871425B2 (en) 2014-10-28
CN104093784B (zh) 2016-09-21
WO2013117989A1 (en) 2013-08-15
KR101904582B1 (ko) 2018-10-04
EP2812399A1 (en) 2014-12-17
TW201341963A (zh) 2013-10-16
JP2015508184A (ja) 2015-03-16
CN104093784A (zh) 2014-10-08
KR20140117391A (ko) 2014-10-07
PH12014501731B1 (en) 2014-11-17
EP2812399B1 (en) 2016-04-20
SG11201403059WA (en) 2014-07-30
US20130209754A1 (en) 2013-08-15
TWI544280B (zh) 2016-08-01

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