CN104064219A - 半导体存储装置、控制器、和存储器系统 - Google Patents
半导体存储装置、控制器、和存储器系统 Download PDFInfo
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- CN104064219A CN104064219A CN201310349384.3A CN201310349384A CN104064219A CN 104064219 A CN104064219 A CN 104064219A CN 201310349384 A CN201310349384 A CN 201310349384A CN 104064219 A CN104064219 A CN 104064219A
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- semiconductor storage
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/20—Initialising; Data preset; Chip identification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
- G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910147025.7A CN109872757B (zh) | 2013-03-21 | 2013-08-12 | 半导体存储装置和半导体装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013059126A JP2014186761A (ja) | 2013-03-21 | 2013-03-21 | 半導体記憶装置、コントローラ、及びメモリシステム |
JP059126/2013 | 2013-03-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910147025.7A Division CN109872757B (zh) | 2013-03-21 | 2013-08-12 | 半导体存储装置和半导体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104064219A true CN104064219A (zh) | 2014-09-24 |
CN104064219B CN104064219B (zh) | 2019-03-26 |
Family
ID=51551892
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310349384.3A Active CN104064219B (zh) | 2013-03-21 | 2013-08-12 | 半导体存储装置、控制器、和存储器系统 |
CN201910147025.7A Active CN109872757B (zh) | 2013-03-21 | 2013-08-12 | 半导体存储装置和半导体装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910147025.7A Active CN109872757B (zh) | 2013-03-21 | 2013-08-12 | 半导体存储装置和半导体装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9136007B2 (zh) |
JP (1) | JP2014186761A (zh) |
CN (2) | CN104064219B (zh) |
TW (2) | TWI604458B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111243639A (zh) * | 2015-09-11 | 2020-06-05 | 东芝存储器株式会社 | 存储器系统及控制半导体存储装置的方法 |
CN111312315A (zh) * | 2018-12-11 | 2020-06-19 | 东芝存储器株式会社 | 半导体存储装置及存储系统 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012119013A (ja) * | 2010-11-29 | 2012-06-21 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2013012553A (ja) * | 2011-06-28 | 2013-01-17 | Toshiba Corp | 半導体記憶装置 |
JP2014063551A (ja) * | 2012-09-21 | 2014-04-10 | Toshiba Corp | 半導体記憶装置 |
JP2014175022A (ja) * | 2013-03-06 | 2014-09-22 | Toshiba Corp | 半導体記憶装置及びそのデータ書き込み方法 |
JP2014186761A (ja) * | 2013-03-21 | 2014-10-02 | Toshiba Corp | 半導体記憶装置、コントローラ、及びメモリシステム |
JP2015176612A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US9595339B2 (en) | 2014-10-20 | 2017-03-14 | Micron Technology, Inc. | Apparatuses and methods for reducing read disturb |
US9460792B2 (en) * | 2014-10-20 | 2016-10-04 | Micron Technology, Inc. | Apparatuses and methods for segmented SGS lines |
JP6271460B2 (ja) * | 2015-03-02 | 2018-01-31 | 東芝メモリ株式会社 | 半導体記憶装置 |
JP2016170834A (ja) * | 2015-03-12 | 2016-09-23 | 株式会社東芝 | 半導体記憶装置 |
JP6581019B2 (ja) * | 2016-03-02 | 2019-09-25 | 東芝メモリ株式会社 | 半導体記憶装置 |
US10268541B2 (en) | 2016-08-15 | 2019-04-23 | Samsung Electronics Co., Ltd. | DRAM assist error correction mechanism for DDR SDRAM interface |
US10636500B1 (en) * | 2018-12-20 | 2020-04-28 | Sandisk Technologies Llc | Reducing read disturb in two-tier memory device by modifying ramp up rate of word line voltages during channel discharge |
KR102651129B1 (ko) * | 2018-12-21 | 2024-03-26 | 삼성전자주식회사 | 메모리 장치의 데이터 재기입 방법, 상기 메모리 장치를 제어하는 메모리 컨트롤러 및 상기 메모리 컨트롤러의 제어 방법 |
JP7163210B2 (ja) * | 2019-02-13 | 2022-10-31 | キオクシア株式会社 | 半導体記憶装置、メモリシステム及び不良検出方法 |
US11282558B2 (en) | 2020-05-21 | 2022-03-22 | Wuxi Petabyte Technologies Co., Ltd. | Ferroelectric random-access memory with ROMFUSE area having redundant configuration wordlines |
CN116504292B (zh) * | 2023-06-27 | 2023-08-25 | 芯天下技术股份有限公司 | nor flash的读取方法、装置、存储芯片及设备 |
Citations (6)
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US6256702B1 (en) * | 1997-09-18 | 2001-07-03 | Sanyo Electric Co., Ltd. | Nonvolatile memory device with extended storage and high reliability through writing the same data into two memory cells |
US20020054507A1 (en) * | 2000-11-09 | 2002-05-09 | Hitachi, Ltd. | Nonvolatile semiconductor memory device |
CN101004950A (zh) * | 2006-01-20 | 2007-07-25 | 株式会社东芝 | 能够高速缓存读出操作的半导体存储器装置 |
CN101176074A (zh) * | 2005-12-09 | 2008-05-07 | 松下电器产业株式会社 | 非易失性存储器件,写入数据的方法,和读出数据的方法 |
CN102169462A (zh) * | 2011-04-27 | 2011-08-31 | 中国科学院光电技术研究所 | 基于NAND Flash的数据记录方法与记录控制器 |
US20130058165A1 (en) * | 2011-09-07 | 2013-03-07 | Hiroshi Maejima | Semiconductor memory device |
Family Cites Families (20)
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JP2001043691A (ja) * | 1999-07-28 | 2001-02-16 | Hitachi Ltd | 不揮発性記憶回路およびマイクロコンピュータ |
JP3916862B2 (ja) * | 2000-10-03 | 2007-05-23 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
JP4066308B2 (ja) * | 2001-11-05 | 2008-03-26 | 松下電器産業株式会社 | 半導体記憶装置およびデータ処理装置 |
KR100632947B1 (ko) * | 2004-07-20 | 2006-10-12 | 삼성전자주식회사 | 불 휘발성 메모리 장치 및 그것의 프로그램 방법 |
US7655536B2 (en) * | 2005-12-21 | 2010-02-02 | Sandisk Corporation | Methods of forming flash devices with shared word lines |
KR100729365B1 (ko) | 2006-05-19 | 2007-06-15 | 삼성전자주식회사 | 더미 스트링으로 인한 읽기 페일을 방지할 수 있는 플래시메모리 장치 |
TW200811663A (en) | 2006-08-25 | 2008-03-01 | Icreate Technologies Corp | Redundant array of independent disks system |
JP2009158015A (ja) * | 2007-12-26 | 2009-07-16 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2010258289A (ja) | 2009-04-27 | 2010-11-11 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US8379456B2 (en) | 2009-10-14 | 2013-02-19 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices having dummy cell and bias methods thereof |
JP2011103154A (ja) * | 2009-11-10 | 2011-05-26 | Toshiba Corp | 半導体記憶装置 |
JP5413593B2 (ja) | 2009-12-22 | 2014-02-12 | パイオニア株式会社 | ユーザインターフェイス装置及びコンピュータプログラム |
KR101658479B1 (ko) * | 2010-02-09 | 2016-09-21 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
JP2011258289A (ja) * | 2010-06-10 | 2011-12-22 | Toshiba Corp | メモリセルの閾値検出方法 |
JP2013206510A (ja) * | 2012-03-29 | 2013-10-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR101984796B1 (ko) * | 2012-05-03 | 2019-06-03 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치, 그것을 포함하는 메모리 시스템 및 그것의 동작 방법 |
JP2013254537A (ja) * | 2012-06-06 | 2013-12-19 | Toshiba Corp | 半導体記憶装置及びコントローラ |
US8902657B2 (en) * | 2012-09-07 | 2014-12-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device and controller |
JP2014167842A (ja) * | 2013-02-28 | 2014-09-11 | Toshiba Corp | 半導体記憶装置及びそのコントローラ |
JP2014186761A (ja) * | 2013-03-21 | 2014-10-02 | Toshiba Corp | 半導体記憶装置、コントローラ、及びメモリシステム |
-
2013
- 2013-03-21 JP JP2013059126A patent/JP2014186761A/ja active Pending
- 2013-08-09 TW TW104144347A patent/TWI604458B/zh active
- 2013-08-09 TW TW102128725A patent/TWI529729B/zh active
- 2013-08-12 CN CN201310349384.3A patent/CN104064219B/zh active Active
- 2013-08-12 CN CN201910147025.7A patent/CN109872757B/zh active Active
- 2013-08-30 US US14/015,980 patent/US9136007B2/en active Active
-
2015
- 2015-07-28 US US14/811,524 patent/US9627077B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US6256702B1 (en) * | 1997-09-18 | 2001-07-03 | Sanyo Electric Co., Ltd. | Nonvolatile memory device with extended storage and high reliability through writing the same data into two memory cells |
US20020054507A1 (en) * | 2000-11-09 | 2002-05-09 | Hitachi, Ltd. | Nonvolatile semiconductor memory device |
CN101176074A (zh) * | 2005-12-09 | 2008-05-07 | 松下电器产业株式会社 | 非易失性存储器件,写入数据的方法,和读出数据的方法 |
CN101004950A (zh) * | 2006-01-20 | 2007-07-25 | 株式会社东芝 | 能够高速缓存读出操作的半导体存储器装置 |
CN102169462A (zh) * | 2011-04-27 | 2011-08-31 | 中国科学院光电技术研究所 | 基于NAND Flash的数据记录方法与记录控制器 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111243639A (zh) * | 2015-09-11 | 2020-06-05 | 东芝存储器株式会社 | 存储器系统及控制半导体存储装置的方法 |
CN111243639B (zh) * | 2015-09-11 | 2023-11-03 | 铠侠股份有限公司 | 存储器系统及控制半导体存储装置的方法 |
CN111312315A (zh) * | 2018-12-11 | 2020-06-19 | 东芝存储器株式会社 | 半导体存储装置及存储系统 |
CN111312315B (zh) * | 2018-12-11 | 2023-10-03 | 铠侠股份有限公司 | 半导体存储装置及存储系统 |
Also Published As
Publication number | Publication date |
---|---|
TW201438016A (zh) | 2014-10-01 |
JP2014186761A (ja) | 2014-10-02 |
TW201619975A (zh) | 2016-06-01 |
US20140286099A1 (en) | 2014-09-25 |
CN104064219B (zh) | 2019-03-26 |
US9136007B2 (en) | 2015-09-15 |
TWI529729B (zh) | 2016-04-11 |
US9627077B2 (en) | 2017-04-18 |
CN109872757A (zh) | 2019-06-11 |
TWI604458B (zh) | 2017-11-01 |
US20150332775A1 (en) | 2015-11-19 |
CN109872757B (zh) | 2023-10-17 |
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Effective date of registration: 20170803 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
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Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
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Effective date of registration: 20220113 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |