CN103907175B - 通过使用有槽的衬底的低翘曲晶片结合 - Google Patents

通过使用有槽的衬底的低翘曲晶片结合 Download PDF

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Publication number
CN103907175B
CN103907175B CN201280051691.7A CN201280051691A CN103907175B CN 103907175 B CN103907175 B CN 103907175B CN 201280051691 A CN201280051691 A CN 201280051691A CN 103907175 B CN103907175 B CN 103907175B
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China
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wafer
thickness
semiconductor
substrate
chip
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CN201280051691.7A
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English (en)
Chinese (zh)
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CN103907175A (zh
Inventor
M.A.德萨伯
E.C.E.范格伦斯文
R.A.B.恩格伦
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Lumileds Holding BV
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Koninklijke Philips Electronics NV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
CN201280051691.7A 2011-10-21 2012-10-05 通过使用有槽的衬底的低翘曲晶片结合 Active CN103907175B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161549772P 2011-10-21 2011-10-21
US61/549772 2011-10-21
US61/549,772 2011-10-21
PCT/IB2012/055357 WO2013057617A1 (en) 2011-10-21 2012-10-05 Low warpage wafer bonding through use of slotted substrates

Publications (2)

Publication Number Publication Date
CN103907175A CN103907175A (zh) 2014-07-02
CN103907175B true CN103907175B (zh) 2018-01-23

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Country Status (8)

Country Link
US (2) US9583676B2 (enExample)
EP (1) EP2769406B1 (enExample)
JP (1) JP6100789B2 (enExample)
KR (1) KR102020001B1 (enExample)
CN (1) CN103907175B (enExample)
IN (1) IN2014CN02652A (enExample)
TW (1) TWI553746B (enExample)
WO (1) WO2013057617A1 (enExample)

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CN108807201B (zh) * 2017-05-03 2023-04-14 叶秀慧 用于防止印刷电路板及晶圆对接时因热膨胀产生扭曲的方法及结构
JP6922788B2 (ja) * 2018-03-05 2021-08-18 三菱電機株式会社 半導体圧力センサ
CN110600416A (zh) * 2018-06-12 2019-12-20 上海新微技术研发中心有限公司 一种薄片基板的加工方法
US11421316B2 (en) * 2018-10-26 2022-08-23 Applied Materials, Inc. Methods and apparatus for controlling warpage in wafer level packaging processes
JP2022163949A (ja) * 2021-04-15 2022-10-27 株式会社ジャパンディスプレイ 電子部品のウエハ
CN113380614B (zh) * 2021-06-10 2023-04-07 东莞安晟半导体技术有限公司 一种晶圆减薄方法
JP2023032049A (ja) 2021-08-26 2023-03-09 キオクシア株式会社 半導体装置

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Also Published As

Publication number Publication date
US20170200853A1 (en) 2017-07-13
EP2769406A1 (en) 2014-08-27
US9583676B2 (en) 2017-02-28
JP6100789B2 (ja) 2017-03-22
TW201320203A (zh) 2013-05-16
WO2013057617A1 (en) 2013-04-25
US10084110B2 (en) 2018-09-25
KR20140079499A (ko) 2014-06-26
TWI553746B (zh) 2016-10-11
EP2769406B1 (en) 2022-03-09
KR102020001B1 (ko) 2019-09-09
CN103907175A (zh) 2014-07-02
US20140252405A1 (en) 2014-09-11
JP2015501536A (ja) 2015-01-15
IN2014CN02652A (enExample) 2015-06-26

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Effective date of registration: 20180326

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Patentee before: Koninkl Philips Electronics NV