CN103579129A - 半导体元件安装构件以及半导体装置 - Google Patents

半导体元件安装构件以及半导体装置 Download PDF

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CN103579129A
CN103579129A CN201310302969.XA CN201310302969A CN103579129A CN 103579129 A CN103579129 A CN 103579129A CN 201310302969 A CN201310302969 A CN 201310302969A CN 103579129 A CN103579129 A CN 103579129A
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area
semiconductor element
installation portion
element mounting
otch
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CN103579129B (zh
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白濑丈明
桥本启
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Nichia Corp
Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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Abstract

本发明提供半导体元件安装构件以及半导体装置，半导体元件安装构件包括供半导体元件安装的金属的元件安装部，所述元件安装部包括在俯视下一部分形成切口的金属区域，所述金属区域的切口包含第一区域与第二区域，该第二区域与所述第一区域连续且位于比所述第一区域靠外侧的位置，该第二区域比所述第一区域的宽度宽，所述第一区域的至少一部分位于半导体元件的安装侧主表面的正下方。

Description

半导体元件安装构件以及半导体装置
技术领域
本发明涉及安装半导体元件的安装构件以及具备安装构件的半导体装置。
背景技术
以往，多数半导体装置通过如下制造：在安装构件的元件安装部上涂敷钎焊膏等接合构件，在其上承载半导体元件，使接合构件熔融、固化，并利用密封构件进行密封，从而制造成半导体装置。并且，在使接合构件熔融、固化时，若不能将焊剂的挥发成分等气体从半导体元件与元件安装部之间充分排出，则会在接合构件中产生空隙。
因此，半导体元件与元件安装部的接合面积变小，存在半导体元件的散热性、可靠性降低的问题。
为了解决这样的问题，例如在日本特开平11-031876号公报中，提出了这样一种电路基板，其具有形成在与设于半导体部件底面的接地层对置的位置且与接地层锡焊在一起的接地图案，在该接地图案部分形成有槽，该槽的至少一方的端部作为接地图案的周缘使绝缘基板暴露出。
然而，在日本特开平11-031876号公报所记载的发明中，槽只不过形成为直线状，在此易于产生半导体元件的错位、倾斜。
发明内容
因此，本发明是鉴于上述情况而做成的，其目的在于，提供一种容易增大半导体元件的接合面积且容易将半导体元件安装于目标位置、朝向的半导体元件安装构件或者半导体装置。
为了解决上述课题，本发明的半导体元件安装构件的特征在于，该半导体安装构件包括供半导体元件安装的元件安装部，所述元件安装部具有在俯视下一部分形成切口的金属区域，所述金属区域的切口包含第一区域与第二区域，该第二区域与所述第一区域连续且位于比所述第一区域靠外侧的位置，该第二区域比所述第一区域的宽度宽，所述第一区域的至少一部分位于所述半导体元件的安装侧主表面的正下方。
此外，本发明的另一半导体元件安装构件的特征在于，该半导体元件安装构件包括供半导体元件安装的元件安装部，所述元件安装部具有在俯视下一部分形成切口的金属区域，所述金属区域的切口以分别夹着所述金属区域的纵向中央与横向中央的方式设置两组，所述切口分别包含第一区域与第二区域，该第二区域与所述第一区域连续且位于比所述第一区域靠外侧的位置，该第二区域比所述第一区域的宽度宽，所述第一区域的至少一部分位于共用的一个矩形状的轮廓的内侧。
另外，本发明的半导体元件安装构件能够通过以下方式构成。
也可以为，所述第二区域的轮廓的一部分以沿着所述半导体元件的安装侧主表面的轮廓的方式设置。
也可以为，所述第二区域的轮廓的一部分以沿着所述共用的一个矩形状的轮廓的方式设置。
也可以为，所述第二区域是所述元件安装部的最外侧的区域。
也可以为，所述第二区域向所述第一区域的两侧突出。
也可以为，所述第一区域定向为朝向所述元件安装部的中心部。
也可以为，所述第一区域设置为直线状。
也可以为，所述切口以所述金属区域为一个岛状的方式设置。
也可以为，所述切口以夹着所述元件安装部的中心部的方式设置多个。
也可以为，所述元件安装部俯视呈大致矩形状，所述第二区域是所述元件安装部的最外侧的区域，与所述金属区域的角部分开设置。
也可以为，所述半导体元件安装构件是在电绝缘性的基体上形成有所述元件安装部而成的，在所述基体的所述切口的正下方设有凹部或者贯通孔。
此外，本发明的半导体装置的特征在于，在所述任一个半导体元件安装构件的所述元件安装部安装有半导体元件。
根据本发明，能够将半导体元件以较大的接合面积容易地安装于目标位置、朝向。
结合附图，通过详细的描述使本发明的上述和下一步的目标以及特征变得更加明确。
附图说明
图1A是本发明的一实施方式的半导体装置的概略俯视图，图1B是图1A的A-A剖面的概略剖视图。
图2A是表示本发明的一实施方式的半导体元件安装构件的元件安装部的一个例子的概略俯视图，图2B是表示另一元件安装部的一个例子的概略俯视图。
图3A是说明本发明的一实施方式的半导体元件安装构件的元件安装部的切口的一个例子的概略俯视图，图3B是说明另一实施方式的半导体元件安装构件的元件安装部的切口的一个例子的概略俯视图。
图4是一参考例的半导体元件安装构件的元件安装部的概略俯视图。
附图标记说明如下：
10…半导体元件(11…基板，13…元件构造，15…金属膜)
20…半导体元件安装构件(25…基体，31、32…元件安装部(35…切口(351、353…第一区域，352、354…第二区域)，37…金属区域)
40…接合构件
50…密封构件
100…半导体装置
具体实施方式
以下，参照适当附图对发明的实施方式进行说明。其中，以下所说明的半导体元件安装构件以及半导体装置用于将本发明的技术思想具体化，只要不是特定的记载，本发明并不限定于以下所述。需要说明的是，为了使说明变得明确，有时将各附图所示的构件的大小、位置关系等夸大。
<实施方式1>
图1A是表示实施方式1的半导体装置的概略俯视图，图1B是表示图1A的A-A剖面的概略剖视图。图2A是表示实施方式1的半导体元件安装构件的元件安装部的一个例子的概略俯视图，图2B是表示与其不同的元件安装部的一个例子的概略俯视图。图3A、图3B分别是说明实施方式1的半导体元件安装构件的元件安装部的切口的一个例子的概略俯视图。
如图1A、图1B所示，实施方式1的半导体装置100包括半导体元件10、半导体元件安装构件20(以下，有时记作“安装构件”)、接合构件40以及密封构件50。即，半导体装置100构成为半导体元件10借助接合构件40接合于安装构件20的元件安装部31、并利用密封构件50进行密封。
更详细来说，在本实施方式中，半导体装置100是发光装置。半导体元件10是发光元件。半导体元件10包括基板11、设在基板11的上表面侧的元件构造13以及设在基板11的下表面侧的金属膜15。需要说明的是，金属膜15形成在基板11的下表面的大致整面上，或者形成为与基板11的下表面的轮廓大致相同的形状。
安装构件20是设有凹部的、具有电绝缘性的基体25的封装。在凹部内设有元件安装部31与布线电极部。半导体元件10的金属膜15借助接合构件40接合于元件安装部31，设置于元件构造13的p电极以及n电极分别通过导线与布线电极部连接。密封构件50是填充至凹部的开口上表面的透光性树脂。
并且，如图2A、图2B所示，元件安装部31、32具有俯视下一部分被切除的金属区域37。该金属区域的切口35包含第一区域351、353以及与该第一区域连续且位于比第一区域靠外侧的位置的第二区域352、354。第二区域352、354比第一区域351、353的宽度宽。切口35设置为第一区域351、353的至少一部分位于半导体元件10的安装侧主表面(在本例中为下表面)的正下方。需要说明的是，元件安装部的切口35能够通过图案印刷或喷镀时的掩模、蚀刻层叠规定形状的带有金属膜的薄板等来形成。
需要说明的是，切口35是元件安装部31、32中的、在俯视下对金属区域37进行切除而得到的区域。具体来说，切口35是电绝缘性的基体25的质地的暴露出区域，是引线框的凹部、槽等。如图3A所示，切口35也可以设置在金属区域37的内侧。此外，如图3B所示，切口35也可以设置为从一端贯穿到另一端。在这种情况下，能够认为多个切口35的第一区域相连。
利用这样构成的元件安装部31、32，在接合构件40熔融、固化时，利用比第一区域351、353的宽度宽的第二区域352、354，能获得半导体元件10的自对准效果，能够容易地将半导体元件10安装于目标位置以及朝向。而且，此时，第一区域351、353存在于半导体元件10的正下方。由于第一区域351、353上的接合构件40较少或者基本没有，因此第一区域351、353上的间隙作为焊剂的挥发成分等气体的排出通道发挥作用，能够抑制空隙的产生，能够以较大的接合面积容易地安装半导体元件10。此外，比第一区域351、353的宽度要宽的第二区域352、354配置在半导体元件10的外缘，因此能够促进焊剂的挥发成分等气体的排出。
需要说明的是，半导体元件10配置在比第二区域352、354靠内侧的位置，因此元件安装部31、32比半导体元件10大。接合构件40的一部分润湿扩展至元件安装部31、32的俯视下的、存在于比金属区域37的半导体元件10(或者，后述的共用的一个矩形状的轮廓)靠外侧的部位(周边延伸部)，能够抑制由于接合构件40的不均匀导致的半导体元件10倾斜，促进角部的形成而提高半导体元件10与元件安装部31、32的接合强度。
以下，对半导体元件安装构件20以及半导体装置100的优选方式进行详细描述。
如图2A、图2B所示，元件安装部31、32在俯视下具有夹着金属区域37的纵向(图中y方向)中央设置的至少一组的切口35以及夹着该元件安装部的横向(图中x方向)中央设置的至少一组的切口35。而且，设置为第一区域351、353的至少一部分位于共用的一个矩形状(矩形状的虚拟区域)的轮廓的内侧。半导体元件10的安装侧主表面的轮廓是矩形状的情况较多，若采用上述结构的元件安装部31、32，则相对于多数半导体元件10能够起到上述的作用、效果。
如图2A、图2B所示，优选的是，将第二区域352、354的轮廓的一部分以沿着半导体元件10的安装侧主表面的轮廓(或者，上述共用的一个矩形状的轮廓)的方式设置。利用这样的结构，在使接合构件40熔融、固化时，以半导体元件10的安装侧主表面的轮廓沿着第二区域352、354的轮廓的一部分的方式发挥自对准效果，能够更加容易地将半导体元件10安装于目标位置以及朝向。需要说明的是，在此所谓的“第二区域352、354的轮廓的一部分”是指，第二区域352、354的轮廓中的与第一区域351、353连续的边或者弧，优选的是与第一区域351、353直接连结且向宽度方向突出的边或者弧。此外，在此所谓的“沿着”是指，在俯视下轮廓的一部分彼此大致一致。
如图2A、图2B所示，第二区域352、354是元件安装部31、32的最外侧的区域。第二区域可以如上所述地位于金属区域37的内侧，但如此设为元件安装部31、32的最外侧的区域的话，则能够使焊剂的挥发成分等气体容易从第一区域351、353排出。此外，元件安装部31、32形成为小型，能够与半导体元件10高效率地接合。特别是，在安装侧主表面安装矩形状的半导体元件10的情况下，优选将元件安装部31、32的外形也设为矩形状，由构成其缘部的至少对置的两条边来形成切口35、即第二区域352、354。
如图2A、图2B所示，切口的第二区域352向第一区域351的两侧突出。这样的话，能够使焊剂的挥发成分等气体容易从第一区域351排出。此外，在图2B所示的元件安装部32中，第二区域354包含仅在第一区域353的单侧突出的切口35。采用这样的切口35，能够实现小型化并且起到半导体元件10的自对准效果以及抑制接合构件40中产生空隙的效果这两种效果。
如图2A、图2B所示，第二区域352、354的轮廓的一部分向相对于第一区域351、353的延伸方向大致垂直的方向突出。这样的话，能够容易获得由第二区域352、354产生的自对准效果。除此之外，也可以使第二区域的轮廓的一部分在相对于第一区域的延伸方向倾斜的方向上突出。此时，第一区域的延伸方向与第二区域的轮廓的一部分的突出方向所成的角度例如大于45度且小于90度。
如图2A、图2B所示，第一区域351定向为朝向元件安装部31的中心部。焊剂的挥发成分等气体具有在金属区域37处积存于远离外缘、切口35的位置(在不存在切口35的状态下为元件安装部31、32的中心部)的趋势。因此，通过使第一区域351朝向元件安装部31的中心部延伸，能够易于排出焊剂的挥发成分等气体。
如图2A、图2B所示，第一区域351、353设置为直线状或者矩形状(其中，顶端也可以带有圆度)。这样的话，能够以最短距离连通至半导体元件10的外侧，能够使焊剂的挥发成分等气体容易从第一区域351、353排出。除此之外，也可以将第一区域设为曲线状、波线状、弯曲的形状等。
如图2A、图2B所示，金属区域37形成为一个岛状。即，金属区域37虽由于切口35而被切削，但并没有因此被分割而维持着连续的形状。这样的话，能够抑制接合构件40在元件安装部31、32上不均匀，容易增大接合面积而抑制半导体元件10倾斜。特别是，最好是留下元件安装部31、32的中心部的圆形区域(例如由以与第一区域351、353的顶端相接的方式设置的虚拟内接圆所围成的区域)而形成为一个岛状。此外，在如上述那样将切口设置为例如从元件安装部的一端贯通至另一端的十字状或直线状等、将元件安装部分隔成多个岛状的情况下，将各岛状部的大小设为相等即可。
如图2A、图2B所示，切口35以夹着元件安装部31、32的中心部的方式设置多个。这样的话，第二区域352、354以夹着或者包围半导体元件10的方式配置，因此能够更容易地将半导体元件10安装于目标位置以及朝向。此外，在元件安装部31、32上的较宽的范围内，能够易于排出焊剂的挥发成分等气体。此外，通过切口35以夹着元件安装部31、32的纵向中央或者横向中央的方式设置一组，或者以夹着元件安装部31、32的纵向中央以及横向中央的方式设置两组，能够更加容易地将半导体元件10安装于目标位置以及朝向。此外，如图2B所示，也可以在金属区域37的缘部的一边上设置多个切口35。
如图2A、图2B所示，元件安装部31、32在俯视下为大致矩形状，第二区域352、354是元件安装部31、32的最外侧的区域，与金属区域37的角部分开地设置。这样的话，能够容易获得由第二区域352、354产生的自对准效果。
需要说明的是，安装构件是通过在电绝缘性的基体上形成有元件安装部而成的，也可以在切口的正下方的基体上设有凹部或者贯通孔。由此，焊剂的挥发成分等气体容易通过切口正下方的凹部或者贯通孔排出，能够进一步容易抑制空隙的产生。通过将凹部或者贯通孔设置在第一区域的正下方特别容易获得该效果。此外，凹部或者贯通孔也可以设置在第二区域的正下方。在该情况下，第二区域的轮廓的边缘显著，易于获得半导体元件的自对准效果，能够更加容易地将半导体元件安装于目标位置以及朝向。另外，也可以在第一区域与第二区域这两者的正下方设置凹部或者贯通孔，该情况下获得上述两者的效果。需要说明的是，这样的凹部或者贯通孔能够通过蚀刻、划线、挖掘或者层叠加工成规定形状的薄板等来形成。
此外，位于半导体元件10的正下方的元件安装部的切口35(也可以是第一区域351、353)所占的面积的总和相对于半导体元件10的安装侧主表面的面积优选为5％～40％，更优选为10％～30％。若采用这样的范围，能够理想地维持元件安装部的面积，并且获得上述那样的效果。
对于将半导体元件10安装于以上那样的安装构件20的元件安装部31、32而成的半导体装置，能够做成为半导体元件10以较大的接合面积接合于元件安装部31、32的目标位置、朝向、且电气特性、配光特性、散热性、可靠性等优良的半导体装置。在半导体元件10为发光元件的发光装置的情况下，由于具有上述优良的特性，能够作为高输出且具有长寿命、并且容易进行光学调整的光源。特别是，在含有荧光体等波长变换构件的发光装置的情况下，理想的是，将近似于“点光源”那样的、装置中的波长变换构件仅配置在发光元件的附近。
以下，对本发明的半导体元件安装构件以及半导体装置的各构成要素进行说明。
(半导体元件10)
半导体元件10至少由基板11与元件构造13构成。半导体元件10可以是发光二极管(LED)、半导体激光(LD)等发光元件，也可以是晶体管、闸流晶体管等电子元件。半导体元件10的安装侧主表面的形状是四边形，特别优选是矩形或者正方形，但也可以是其它形状。半导体元件10(特别是基板11)的侧表面可以相对于上表面大致垂直，也可以向内侧或者外侧倾斜。半导体元件10优选是将p电极与n电极分别设置在元件的上表面与下表面的上下电极(对置电极)构造。在上下电极构造中，安装侧主表面的接合容易对元件的电气特性、散热性、可靠性等产生影响，因此本发明特别能起到效果。此外，半导体元件10也可以是在面一侧具有p、n两电极的构造。在该情况下，可以进行面朝上装也可以进行倒装，但优选的是应用比较容易产生空隙的面朝上安装。
(基板11)
作为基板11，可以是构成元件构造13的半导体的结晶能够生长的结晶生长用基板，也可以是与结晶生长用基板分离的接合于元件构造13的接合用基板。基板11具有导电性，从而能够采用上下电极(对置电极)构造。此外，容易对元件构造13面内均匀地供电，容易提高功率利用系数。作为结晶生长用基板，举出蓝宝石、尖晶石、氮化钾、氮化铝、硅、碳化硅、钾砷、钾磷、铟磷、硫化锌、氧化锌、硒化锌、金刚石等。作为接合用基板，优选的是遮光性基板。遮光性基板大多数热传导性优良，容易提高半导体元件10的散热性。具体来说，能够使用硅、碳化硅、氮化铝、铜、铜-钨、钾砷、陶瓷等。其中，在与元件构造13的热膨胀率差的观点来说，优选硅、碳化硅、铜-钨，在费用的观点来说，优选硅、铜-钨。基板11的厚度例如是20μm～1000μm，在基板11的强度、半导体装置100的厚度的观点来说，优选的是50μm～500μm。
(元件构造13)
元件构造13是半导体层的层叠体，优选的是，至少包含n型半导体层与p型半导体层，并且在n型半导体层与p型半导体层之间夹有活性层。也可以含有电极、保护膜。电极能够由与下述金属膜15相同的材料构成。保护膜能够由从硅、钛、锆、铌、钽、铝构成的群中选择的至少一种元素的氧化物来构成。在半导体元件10是发光元件的情况下，元件构造13的发光波长能够根据半导体材料、其混晶比从紫外到红外进行选择。作为半导体材料，优选的是，使用能够发出可高效率地励起荧光体的短波长的光的氮化物半导体(主要由一般式InxAlyGa1-x-yN(0≤x≤1，0≤y≤1，x+y≤1)表示)。除此之外，也能够使用InAlGaAs类半导体、InAlGaP类半导体、硫化锌、硒化锌、碳化硅等。
(金属膜15)
金属膜15设置在基板11的下表面，从而能够提高半导体元件10朝向安装构件20的接合强度，并且容易在低温下获得较高接合强度。此外，将金属膜15的形状(俯视形状)设为与元件安装部31、32的金属区域的形状(俯视形状)大致相同或者大致相似，也能够容易获得半导体元件10的自对准效果与抑制接合构件40中产生空隙这两种效果。作为金属膜15的材料，能够使用金、银、锡、铂、钛、铝、钨、钯、镍或者这些的合金。金属膜15可以是单层膜，也可以是多层膜。金属膜15能够通过溅射法、镀敷法、蒸镀法等形成。需要说明的是，也能够省略金属膜15，也可以使基板11的下表面与接合构件40接触。
(安装构件20)
安装构件20是包括元件安装部31、32的构件。安装构件20在多数情况下构成为包含元件安装部31、32与基体25。安装构件20能够使用具有凹部(杯状部)的结构或平板状的结构等。具有凹部的结构容易提高光的萃取效率，平板状的结构易于安装半导体元件10。大体上前者为封装而后者为布线基板的形态。需要说明的是，安装构件也可以是如灯型(炮弹型)的半导体装置(发光装置)那样引线框兼做元件安装部与基体的形态。此外，安装构件20也可以是子基板(submount)。
(基体25)
基体25是保持元件安装部31、32的构件。作为构成封装的基体25，举出将设有基板或者布线的基板层叠而成的结构、成形封装后通过镀金等设有布线的结构、与引线框一体成形的结构等。作为构成封装的基体25的材料，例如举出聚邻苯二甲酰胺、液晶聚合物等热塑性树脂、环氧树脂等热固化性树脂、玻璃环氧树脂、下述那样的陶瓷等。此外，为了使来自半导体元件10的光高效率地反射，也可以在这些树脂中混合氧化钛等白色颜料。作为封装的成形方法，能够使用嵌入成形、注塑成形、挤压成形、传递模塑法等。作为构成布线基板的基体25，举出包含氧化铝、氮化铝、氧化锆、氮化锆、氧化钛、氮化钛或者这些的混合物的陶瓷基板、包含铜、铁、镍、铬、铝、银、金、钛或者这些的合金的金属基板以及玻璃环氧树脂基板、BT树脂基板、玻璃基板、树脂基板、纸基板等。也可以是聚酰亚胺等的挠性基板(柔性基板)。
(元件安装部31、32)
元件安装部31、32包含切口35与金属区域37。元件安装部31、32也可以由切口35与金属区域37构成。金属区域37是供半导体元件10安装的、由金属构成的部位或者构件。元件安装部31、32也可以是与布线电极部相同的结构，或者与布线电极部实现一体化。元件安装部31、32是例如被称作“凸台”或“下垫板”等的构件。作为金属区域37，具体来说，举出由铜、铝、金、银、钨、钯、铁、镍、钴、钼、铬、钛或者这些的合金、磷青铜、铁铜合金等形成的引线框、布线。在布线的情况下，也可以是这些材料的单层膜或者多层膜。此外，在其表层上，也可以设有银、铝、铑、金、铜或者这些合金等的镀金或反光膜。此外，金属区域37也能够通过对引线框等兼做基体25的金属构件实施冲压加工、蚀刻加工来设置。
(接合构件40)
接合构件40是使半导体元件10与安装构件20接合的构件。接合构件40也可以包含金、锡、银、铜、锌、铋、铟、锑等金属，作为焊剂而包含树脂、有机溶剂。具体来说，举出锡-铋类、锡-锌类、锡-铜类、锡-银类、金-锡类等各种焊料、金属膏。需要说明的是，“接合构件”是指在包含熔融·固化前的状态以及固化后的状态这两者的意味下进行使用。
(密封构件50)
密封构件50是对半导体元件10、导线、元件安装部31、32、布线电极部、接合构件40等进行密封而保护它们免受灰尘、外力等的影响的构件。密封构件50的母材具有电绝缘性且从元件构造13射出的光能够透过(优选的是透过率为70％以上)即可。具体来说，举出硅酮树脂、硅酮改性树脂、硅酮变形树脂、环氧树脂、酚醛树脂、聚碳酸酯树脂、丙烯酸树脂、TPX树脂、降冰片烯树脂或者含有这些树脂一种以上的混合树脂。也可以是玻璃。其中，由于硅酮树脂的耐热性、耐光性优良，固化后的体积收缩较少，因此是优选的。
密封构件50也可以在其母材中添加填充剂、荧光体等具有各种功能的颗粒。作为填充剂，能够使用扩散剂、着色剂等。具体来说，举出二氧化硅、氧化钛、氧化镁、碳酸镁、氢氧化镁、碳酸钙、氢氧化钙、硅酸钙、氧化锌、钛酸钡、氧化铝、氧化铁、氧化铬、氧化锰、玻璃、碳黑等。填充剂的颗粒的形状可以是粉末状，也可以是球状。此外，也可以是中空或者多孔质。荧光体吸收从元件构造13射出的一次光的至少一部分，射出与一次光不同波长的二次光。具体来说，具有由铈激活的铱·铝·石榴石(YAG)、由铕及/或铬激活的含氮的铝硅酸钙(CaO-Al2O3-SiO2)、由铕激活的硅酸盐((Sr，Ba)2SiO4)等。由此，能够制作射出可见波长的一次光以及二次光的混色光(例如白色类)的发光装置、被紫外光的一次光励起而射出可视波长的二次光的发光装置。
【实施例】
以下，对本发明的实施例进行详细叙述，但本发明并不仅限定于以下所示的实施例是不言而喻的。需要说明的是，各尺寸是设计值。
<实施例1>
实施例1的半导体装置是具有图1所示的例子的构造的、表面安装型封装的LED。
安装构件是长3.5mm、宽3.5mm、厚度0.875mm的大致长方体、在上表面侧的中心部设有两段式的凹部的封装。上段的凹部是直径2.8mm、深度0.5mm的圆形开口的凹部。下段的凹部是长1.3mm、宽1.3mm的大致正方形(角部带有圆度)的开口且深度0.1mm的凹部。该封装的基体是氧化铝陶瓷的层叠体。元件安装部设置于下段的凹部的底部，其俯视下的大体外形与下段的凹部相同。这样，通过将元件安装部设置于凹部内，能够抑制与元件安装部的不必要的短路、从接合构件流出的焊剂等附着于布线电极部等。此外，在上段的凹部的底部，以包围元件安装部的方式设有正极以及负极的布线电极部。该元件安装部与布线电极部是将钨、镍、金按顺序层叠而成的，最上层的金的膜厚为0.5μm。需要说明的是，正极以及负极的布线电极部分别与在安装构件的下表面暴露出的外部连接端子电连接。
如图2A所示，元件安装部的切口在构成大致正方形的边缘的各边的大致中央各设置一个。需要说明的是，在切口的底面暴露出有基体的质地。第二区域是宽度0.3mm、长度0.15mm的矩形状，形成在作为元件安装部的最外侧的边缘上。第一区域是宽度0.1mm、长度0.35mm的矩形状，从第二区域的中央朝向内侧延伸而形成。即，第二区域比第一区域的宽度宽，第二区域的从第一区域向宽度方向突出的轮廓向与第一区域的延伸方向大致垂直的方向上突出0.1mm。这样，该切口在俯视下具有大致T字形状。并且，四个切口处的第二区域的从第一区域向宽度方向突出的轮廓都是沿着长1mm、横1mm的大致正方形的轮廓。在该长1mm、横1mm的大致正方形的区域内，元件安装部的金属区域所占的比例是86％。
半导体元件是长1mm、横1mm、厚度0.15mm的大致长方体且中心波长385～405nm的紫外发光的LED芯片。该LED芯片是在蓝宝石基板的上表面侧形成氮化物半导体的发光元件构造、在基板的下表面侧形成有将铝、钨、铂按顺序层叠而成的金属膜的结构。该金属膜形成在基板的下表面的大致整面上。
而且，半导体元件在其轮廓大致沿着切口的第二区域的从第一区域向宽度方向突出的轮廓的状态下，借助接合构件接合于元件安装部。接合构件是金-锡的共晶钎焊膏(三菱综合材料(株)制)。此外，半导体元件的p电极以及n电极分别通过金的导线与布线电极部连接。密封构件是硅酮树脂，填充至凹部的开口上表面。
<实施例2>
实施例2的半导体装置除了元件安装部的金属区域的切口之外具有与实施例1的半导体装置相同的结构。如图2B所示，实施例2的元件安装部的切口在构成大致正方形的边缘的各边的大致中央处各设置一个且在左右两边的中央与角部之间各设置一个，合计设置八个。位于上下两边的切口与实施例1的切口相同。位于左右两边的大致中央的切口是宽度0.1mm、长度0.5mm的矩形状。位于左右两边的中央与角部之间的切口的第二区域是宽度0.2mm、长度0.15mm的矩形状，形成在作为元件安装部的最外侧的边缘。第一区域是宽度0.1mm、长度0.25mm的矩形状，靠近第二区域的单侧而从该第二区域向内侧延伸而形成。这样，该切口在俯视下具有大致L字形状。而且，六个切口中的第二区域比第一区域的宽度宽，第二区域的从第一区域向宽度方向突出的轮廓都是沿着长1mm、横1mm的大致正方形的轮廓。在该长1mm、横1mm的大致正方形的区域内，元件安装部的金属区域所占的比例为76％。
<参考例1>
参考例1的半导体装置除了元件安装部的金属区域的切口之外具有与实施例1的半导体装置相同的结构。图4是参考例1的元件安装部的概略俯视图。如图4所示，参考例1的元件安装部91的切口95在构成大致正方形的边缘的各边的大致中央各设置一个。该切口95是宽度0.15mm、长度0.15mm的矩形状，形成在作为元件安装部91(金属区域97)的最外侧的边缘，仅相当于第二区域。由此，在使半导体元件与元件安装部91接合时，切口95几乎不存在于半导体元件的正下方。
<验证>
利用X射线检查((株)东研制TUX-3200)算出实施例1、2以及参考例1的半导体装置中的半导体元件的接合面积，对半导体元件朝向元件安装部的接合性进行评价。接合构件(膏剂)的涂敷直径是500μm，回流条件是最高温度327℃，280℃以上的加热时间是86秒。接合面积通过将半导体元件的安装侧主表面的面积设为100％、从中减去空隙的面积而算出。需要说明的是，将元件安装部的位于半导体元件正下方的切口作为空隙加入而计算。
实施例1中的半导体元件的接合面积为平均64.5％、标准偏差(σ)1.7％。实施例2中的半导体元件的接合面积为平均63.3％、标准偏差1.1％。参考例1中的半导体元件的接合面积为平均56.2％、标准偏差5.7％。需要说明的是，对于半导体元件的位置以及朝向，实施例1、2以及参考例1的半导体装置皆同样地良好。
由上述可知，实施例1、2中的半导体元件的接合面积大于参考例1中的半导体元件的接合面积，使焊剂的挥发成分等气体较好排出，以较大的面积进行接合。此外，空隙的大小以参照例1＞实施例1＞实施例2的顺序减小。由此可知，通过在元件安装部处增加切口，随着因金属区域的面积的减少产生的接合面积的减少，焊剂的挥发成分等气体更加容易排出。
工业实用性
本发明的半导体元件安装构件以及半导体装置能够应用于液晶显示器的背光灯光源、各种照明器具、大型显示器、广告或指引牌(destinationguide)等的各种显示装置以及数码相机、传真机、复印机、扫描仪等中的图像读取装置、曝光装置、投影仪装置等。

Claims (20)

1.一种半导体元件安装构件，其用于安装半导体元件，
该半导体元件安装构件包括供半导体元件安装的元件安装部，
所述元件安装部具有在俯视下一部分形成切口的金属区域，
所述金属区域的切口包含第一区域与第二区域，该第二区域与所述第一区域连续且位于比所述第一区域靠外侧的位置，该第二区域比所述第一区域的宽度宽，
所述第一区域的至少一部分位于半导体元件的安装侧主表面的正下方。
2.根据权利要求1所述的半导体元件安装构件，其中
所述第二区域的轮廓的一部分以沿着半导体元件的安装侧主表面的轮廓的方式设置。
3.根据权利要求1所述的半导体元件安装构件，其中，
所述第二区域是所述元件安装部的最外侧的区域。
4.根据权利要求1所述的半导体元件安装构件，其中，
所述第二区域向所述第一区域的两侧突出。
5.根据权利要求1所述的半导体元件安装构件，其中，
所述第一区域定向为朝向所述元件安装部的中心部。
6.根据权利要求1所述的半导体元件安装构件，其中，
所述第一区域设置为直线状。
7.根据权利要求1所述的半导体元件安装构件，其中，
所述切口以所述金属区域为一个岛状的方式设置。
8.根据权利要求1所述的半导体元件安装构件，其中，
所述切口以夹着所述元件安装部的中心部的方式设置多个。
9.根据权利要求1所述的半导体元件安装构件，其中，
所述元件安装部俯视呈大致矩形状，
所述第二区域是所述元件安装部的最外侧的区域，与所述金属区域的角部分开设置。
10.根据权利要求1所述的半导体元件安装构件，其中，
所述半导体元件安装构件是在电绝缘性的基体上形成所述元件安装部而成的，
在所述基体的所述切口的正下方设有凹部或者贯通孔。
11.一种半导体元件安装构件，其用于安装半导体元件，
该半导体元件安装构件包括供半导体元件安装的元件安装部，
所述元件安装部具有在俯视下一部分形成切口的金属区域，
所述金属区域的切口以分别夹着所述金属区域的纵向中央与横向中央的方式设置两组，
所述切口分别包含第一区域与第二区域，该第二区域与所述第一区域连续且位于比所述第一区域靠外侧的位置，该第二区域比所述第一区域的宽度宽，
所述第一区域的至少一部分位于共用的一个矩形状的轮廓的内侧。
12.根据权利要求11所述的半导体元件安装构件，其中
所述第二区域的轮廓的一部分以沿着所述共用的一个矩形状的轮廓的方式设置。
13.根据权利要求11所述的半导体元件安装构件，其中，
所述第二区域是所述元件安装部的最外侧的区域。
14.根据权利要求11所述的半导体元件安装构件，其中，
所述第二区域向所述第一区域的两侧突出。
15.根据权利要求11所述的半导体元件安装构件，其中，
所述第一区域定向为朝向所述元件安装部的中心部。
16.根据权利要求11所述的半导体元件安装构件，其中，
所述第一区域设置为直线状。
17.根据权利要求11所述的半导体元件安装构件，其中，
所述切口以所述金属区域为一个岛状的方式设置。
18.根据权利要求11所述的半导体元件安装构件，其中，
所述半导体元件安装构件是在电绝缘性的基体上形成所述元件安装部而成的，
在所述基体的所述切口的正下方设有凹部或者贯通孔。
19.一种半导体装置，其在权利要求1所述的半导体元件安装构件的所述元件安装部安装有半导体元件。
20.一种半导体装置，其在权利要求11所述的半导体元件安装构件的所述元件安装部安装有半导体元件。
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