TW299564B - - Google Patents

Download PDF

Info

Publication number
TW299564B
TW299564B TW085105592A TW85105592A TW299564B TW 299564 B TW299564 B TW 299564B TW 085105592 A TW085105592 A TW 085105592A TW 85105592 A TW85105592 A TW 85105592A TW 299564 B TW299564 B TW 299564B
Authority
TW
Taiwan
Prior art keywords
objects
substrate
electronic package
patent application
pad
Prior art date
Application number
TW085105592A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW299564B publication Critical patent/TW299564B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/642Capacitive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205Shape
    • H01L2224/32057Shape in side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01032Germanium [Ge]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01039Yttrium [Y]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01052Tellurium [Te]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01061Promethium [Pm]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01077Iridium [Ir]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structure Of Printed Boards (AREA)

Description

五、發明説明 、本發明係有關於一種電子封裝,而且特別是有關於但不限 於一種包括基板及至少一元件的電子封裝,該至少一元件的 每個係藉由該基板表面上所具有的一導電墊而附加在該基 板上。 電子封裝通常包括一具有至少主動元件於其上的電路化基 板;僅包括一元件的封裝俗稱單晶片模組(S(:M),而包括複 數個元件的封裝稱爲多晶片模組(M C M )。使用諸如黏膠之 類的接合材料在將元件連在基板上的電子封裝應用中是普遍 的’特別是在球形格柵陣列(B G Α)封裝中。 BGA封裝在電子封裝工業中是最近發展出來的,用以取代 目前所知的四方平坦封裝(QFp)。主要的差異是連接到印刷 電路板(PCB)的連接系統,亦稱爲第二位階連接,該連接是 藉由一基板底邊上以矩陣佈局形式排列的共晶錫鉛合金球製 成的,而不是用沿著塑膠元件本體之週邊角落放置的金屬導 線製成的。BGA及QFP封裝描述在出處爲v〇1 6 Ν〇. 3, March 1995, Pages 38·40的文章"電路組合"((:ircuitAssembiy) 中。 每一個元件通常藉由導電墊連接至基板,該墊通常是比所 對應的文連元件稍爲大點,而該元件是在該基板的上表面。 經濟部中央標準局員工消費合作社印裳 這些墊與黏膠材料的相容性良好:此外,在某種程度上, i們可使熱量很谷易從元件的背後藉由傳導傳遞至基板。 習知技術的缺點是每一個墊會浪費基板上表面的大塊區域 而無接線而且根本無法用於連線的路線規劃。這個問題在 MCM中特別嚴重,其中被浪費掉而無法接線的區域必須乘 以元件的數目。這問題牵涉要增加電子封裝的尺寸或減少在 4- 本紙浪尺度適用中國國家標準(CNS ) A4規格(210X29?公着) A7 A7 經濟部中央標準局員工消費合作社印製 五、發明説明f ; 相同基板上所安置的元件數 的模組數目。 ®而増加了相同應用中所需 爲了增加電子封裝料接線性,目前的方 :吏用基板的自由區域作接線;然而,此-解決之 =能惡化,特別是在有機的基板中,而其熱消散値通 、大於0.5瓦。另-個方法是修改基板,亦即不是改變 及,造成較高導電性的材料之技術,例如:陶走載體,不然 就疋增加層的數目;然而,以上兩料決之 增加整個封裝的成本。 頁向卫會 尚有—問題是:這些模組如同其他電子零件都需要與電容 解耦合’⑽減少在應職位階處或在模組基板處的信號雜 訊。 信號雜訊的最佳化作業之通常定址方法是:將電容電源與 接地儘可能與主動元件橋接的非常靠近。當這些電容是處於 封裝位階處的板上時,它們需要特定的接線圖樣而且會衝擊 對電路來説已經是相當小的區域,因而增加了整個模組的尺 寸。.對照而言,當電容係組裝在模组所在的母板上時,它們 常常只能提供剛好能被接受的雜訊減少量。 以上習知技術的缺點可以本案所請的發明加以克服。因此 本發明提供一種如上所述之電子封裝,其特徵在於該整是 由複數1固不相連的零件組成的。 這種解決之道解決了上述的問題。特別是,此法可增加基 板頂層的電氣可接線性以及提昇電子封裝的電氣信號雜訊位 準的減低力》 本案所提的解決之道可完全與現存的材料相容而不影響它 -5- 本纸張尺度賴巾U國家標準(CNS ) A4規格(210X 297公慶) 扣衣---- (請先閱讀背面之注意事^1-"'寫本莧) 訂 - Α7 Έ7 五、發明説明p ) 們的性質;本發明之方法是便宜的且極易實施。此外本發明 的封裝方法可完全地與目前的製程相容五與用於此行業的設 備相容。 這些優點是藉由本發明獲致的,且沒有整個封裝熱消散劣 化的問題;全部墊金屬表面及所提之設計間之差異所產生的 德爾他(delta)熱消散能力是可略而不計的。 在本發明的特殊實施例中,該複數個物件被該基板的可接 線區域所分離。 每一對相鄰物件間的自由區域提供了用以規刻連線路徑的 至少一條接線通道,藉此增加了有關於可用之區域或整個封 裝尺寸的基板可接線性》本發明之實施例包括了減少某一特 別應用所需的電子封裝尺寸;對照而言,它可使準備設置在 相同基板上的元件數目變多,因而減少了相同應吊所需之模 組的數目。 最好’孩元件包括四個角落,該墊由四個物件組成,而且 孩可接線區域具有從該四個角落延伸出而形成的十字形s 這種形狀是極有利的,因爲信號的密度在各角落中會大爲 增加;因此,從該元件之角落開始的接線通道使接線擴散開 來變得更容易些^ ' 在另一個有利的實施例中,該電子封裝是多晶片模組。在 一包括複數個元件的封裝中,所提出的墊設計對整個封裝成 本及性能產生最大的影響》 _ 在本發明的另一個實施例中,至少第—組該等物件連接至 一接地電位,以及至少一第二组物件是連接著—電源電位, 該第一組及第二組物件是藉由一解耦合電容相互連在一起的 ' 6 - 本紙浪尺度適用中國國家標準(CNS ) Α4規格釐) i 1— n —I— n · 批衣I {請先閲讀背面之注意事項+^寫本頁
•1T 經濟部中央標準局員工消費合作社印製 經濟部中夬標缒局員工消費合作社印製 五、發明説明(4 9 此解決 < 运提供了較佳的元件解耦合動作。它使得信號 雜訊減少,以供與主動元件非常靠近之電容電源及接地橋接 疋性能。此外,此-解決之道不會影響具有專用電路之基板 上可用區域之多寡。 取好,該基板包括至少—連接著至少該等物件之一的導電 孔。 本發明的實施例可増加封裝的熱消耗,因而擴大了電子封 裝技術的應用範圍。 有利的是,該電子封裝包括了另一個供應在該基板之另一 個表面上的墊,該另一個墊由複數個另一些不相接的物件所 組成,該等另一些物件的至少—個是藉由該等孔的至少一個 而連接至該等物件中之對應的一個。 最終的路徑是熱消散解決之道,它能增加整個封裝的熱力 性能,並且能幫助該元件有效地控制熱消散因子。結果是熱 的均勻散佈而使熱很容易就傳至母板。 在本發明某一特別有利的實施例中,該基板包括_接地層 及一電源層’該第一物件係藉由該第一組孔而連接至該接地 層,而該第二物件是藉由該第二組孔而連接至該電源層。 在此一實施例中,對解耦合電容的連接是經由誓設計上的 通道而達成的’該墊設計並沒有用以驅動内層(電源或接地) 與層狀物的上表面間之連線所需之越過該.等鑽出之孔的額外 接線作業;該等電容可組合成靠近該元件,因而増加了電氣 性能而使得元件解耦合變得理想。 此外,此一連接尚可藉由金屬接地及電源平面而増進封裝 -7 _ 尽紙伕尺度適用中國國家標準CN:S ) A4規格(210X29?公釐) •产 裝 ^ 訂- ^ 線 {請先閱讀背面之注意事項再填寫本頁) ------
的熱消散因子’而且可擴展熱消散因子的影響至所有朝向母 板介面之接地模组連線。 經濟部中央標準局員工消費合作社印製 Μ在本發明的另—個有利的實施例中,該第一物件是藉由該 等第—組另—物件的對應物件而連接至該接地電位,而該第 —物件是藉由該第二组的物件之對應物件而連接至該電源電 位。 在蔹基板的底表面上的這些另外物件可提供非常短的連線 給出現在相同侧的連接墊,而不需要爲這些連線提供鑽出之 孔這些連接墊可提供多個進接點,而具有非常低的電阻値 0 不同型式的電子封裝可用於實施本發明,例如:QFp, BGA,SCM或MCM ;通常,該電子封裝是Bga。 本發明的各種實施例將會以各種例子加以描述,並參考以 下圖式:其中: 圖1是根據習知技術的電子封裝; 圖2描繪根據本發明之一實施例的電子封裝; 圖3是具有增強之熱消散的電子封裝; 圖4a及4b顯示具有元件解耦合的電子封裝; 圖5描續另一個具有元件解搞合的電子封裝。 請參考前述之圖’特別是圖i,顯示著的是根據習知技術 的電子封裝的橫剖面圖。該圖特別描繪包含元件11〇的B(}A 100,而該元件是藉由黏膠層而附接著電路化的基板12〇。基 板120係位於帶有複數個排列成矩陣型式之連接球或突起13〇 的底側上;連接球通常是共晶焊劑,例如:錫鉛合金。這些 球130用來將BGA封裝與印刷電路板(未顯示)相連。現有二 -8 - 本纸張尺度適用令國國家標孪(CNS ) A4規格(2丨〇Χ297公釐〉 --------丨裳-----—訂·-----H旅 (請先聞讀背面之注意事項再填寫本頁) ,經濟部中央樣準局員Η消費合作.社印製 五、發明説明(6 各種BGA爲:塑膠球形格柵陣列(pBGA)、陶磁球形格柵陣 列(CBGA)以及帶狀球形格柵陣列(TBGA),它們之間的主要 不同在於基板材料的型式。 元件100是藉由位於基板12〇上表面的導電墊14〇而附接在基 板120上。這個區域通常比元件11〇大些,而使之與黏膠材料 的相容性良好,而使熱量很容易藉由傳導而從元件丨1〇的背 後傳至基板120 = 元件110係藉由線15 〇而接至基板12 0上的電路,且是藉熱 音波線接合作業而進行,然後該組合體被蓋著—層塑膠樹脂 160 〇 現請參考圖2,顯示著的是根據本發明之一實施例的電子 封裝上視圖。該圖描繪具有附接至基板l2〇之元件11〇的Bga 200 〇 基板120可以是不同的材料,例如:塑膠材料,玻璃纖維 層狀物、陶资、聚酿胺、聚酿亞胺、箱土。特別是,最近才 發展出來的電子封裝技術包含:使用一有機基板,此一基板 是一種由層化的環氧織製的玻璃纖維片所组成的複合結構; 有機一詞的定義源自可用來構建這些層狀物的環氧樹脂化合 物(有機化學)。 元件110通常是晶片或主動元件,而其材料通常是矽、鍺 、或砷化鎵;這些元件通常大致是方形的,特別是正方形的 。元件110通常是用黏膠層而連接至基板丨20。該黏膠可以是 熱塑性的或熱固性的;通常它是環氧黏膠,且通常帶有銀粒 子以便有較好的熱消散。 元件110係藉由位於基板120上表面的導電整而連接至基板 -9 丨裝-----:—訂.-----一.成 {請先閔讀背面之注意事項再填寫本頁) 各紙ft尺度相中關家樣準 (CNS )A4 規袼(210 X 297 公釐) A7 ΒΤ 五、發明説明(7 ) 120。此墊使元件與黏膠材料有較好的相容性;而且使熱容 易從元件110的背後傳至基板12〇,此墊通常是由金屬材料製 成’通常是銅或鎳以及鍍金的銅。 在本發明的上述實施例中,該墊是由複數個不相接之物件 212-2 18組成’結果每一對相鄰的物件會被基板丨2〇的自由區 域所分離。至少一個絕緣通道222_228會供應在該墊中,特別 是在越過元件110處》顯示在該圖中的通道222_228是寬得足 以作爲供連線作線路規劃用的接線通道,藉此增加與該封裝 的可用區域或整個尺寸有關之基板可接線性。通常,接線通 道222-228的每一通道可容納四條1〇〇"111寬(1〇〇#111間隔)或六 條75"m寬(75 "m間隔)的線。熟習此項技藝的人士會了解一 塾設計包括減少某一特定應用所需之電子封裝尺寸;對照而 言’它使得準備設置在相同基板上的元件數目變多,因而減 少了相同應用所需的模组數目。上述的解決之道完全可與現 存的材料相容,而不會影響它們的性質;它是便宜的且極易 實施。此外’本發明的封裝方法可與目前的製程及本行業中 的相關設備完全相容。所應注意的是完全墊金屬表面與上述 設計間的差異所獲致的德爾他熱消散能力可略而不計。 經濟部中央標準局員工消費合作·社印製 --------.(-_ 裝— (請先閲讀背面之注意事項再填考本頁) 碌 在本發明的較佳實施例中,該墊被分成四個分離的物件。 在圖2所描繪的實施例中,該墊已經被分成四個不同的區域 或島212-218 ’而其形狀像馬爾他十字(Maltese Cross)。四條 接線通道222-228的每一條從元件1丨〇的對應角落延伸出來至 其中央區域。中央區域可用來規劃從某一通道至其他通道的 路徑,如在多層基板的情況中,或經由孔道(盲孔或通孔)至 内層。這種形狀特別有利,因爲準備送至元件110的信號密 - _____- 10 - 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇κ29?公釐) ^^9564 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(8 ) ·'一—- 度在角落處會增加;因此’從元件11〇之角落開始的接線通 道使得源自元件110的擴展變得更容易些。 熟習此項技藝的人士會了解相同的塾設計可應用到包括複 數個元件的電子封裝中,例如:多晶片模組。每—個元件藉 由對應的整附接至基板。每_個冬被分成複數個不相接的: 件,而由基板的自由區域所隔開,藉此提供至少—條絕緣通 道2接線用。所應注意的是本發明的解決之道對多晶片模組 而言特別有利,其中所述㈣料可對整個封裝成本及性能 產生最大的影響。 現請參考第3圖,顯示著的是具有增加的熱消散之 裝的橫剖面圖。 ’ BGA 300包括附接至基板31〇的元件11〇。在本發明之實施 例中,基板3 10是一包括複數層3 12_318的多層結構,通 用於多晶片模組中。 疋件π〇是藉由上述的導電墊而附接至基板31〇 ;特別是, 分離的物件218、216及214在圖中是可見的。如前所述,完 全墊金屬纟面與上述設計間的差異所獲致的德爾他熱消散= 力可略而不計。 匕 然而,即使用了導電墊,這些電子封裝的熱消散會受限於 基板的不良熱料性質;此-問題使得電子封裝技術所得瓦 數受限在1.3W而無法作更廣泛的應用, 爲了増加封裝的熱控制,在本發明的實施例中,基板3⑺ 包括至少-導電孔’通常是鑽出的且是金屬化的孔,並連接 至基板310上表面的墊;在此實施例中,熱孔道326係連著物 件216,而熱孔道328係連接物件218。這些熱孔道可再連接 -—--------- -11-
本纸張尺度賴 ) A4^ ( 2lOX29'7iTT j— 裝-----^—訂·------S1線 (請先閱靖背面之注意事項再填寫本Ϊ) 經濟部中央標準局員工消費合作社印製 A7 _____— B7_____ 五7發明説明(9 ) " ·~~~--- 至相同基板310之底表面上的墊。在較佳實施例中,這另— 個墊與基板310上表面的墊之形狀相同。特別是,它包括複 數個分離的物件334-338 ·,在所述之封裝30〇中,熱孔道可^ 以將基板3 10上表面的物件216連接至底表面上的對應物件 336,以及孔328可將物件218連接至對應物件338。 在基板3 10底側上的墊係連接著用以連接B G Α封裝及印刷 電路板(未顯示)的共晶球130。結果是熱均勻散布,該熱是 藉由整個球陣列130而散逸至母板。熱消散會增加整個封裝 熱性能,其熱消散値通常大約爲2 W。 在圖中的實施例中,多層的基板310包括接&(GND)層3芯 及電源(VCC)層344。熱孔道326及328係連接著(^〇層342 及VCC層344。所應注意的是:GND層342及vcc層344這 兩者通常是全金屬平面,它們再次提昇封裝3〇〇的消散因子 。此外,對GN D層342的連接可延伸熱消散因子的效果至朝 著主板介面的全部GND模組連接。 現請參考圖4a及圖4b,顯示著的是具有元件解耦合的電子 封裝》 現特別參考圖4a,所描繪的是BGA 4〇〇的上視圖。BGa 400包括藉由上述之導電墊而附接至基板12〇的元件11〇 ;特 別是’該墊被分成四個不同的物件212_218。 爲了提供較佳的元件解耦合動作,至少墊的第一物件,例 如:物件216,係連接至接地電位,而至少第二物件,例如 •物件218係連著電源電位;這兩個物件216及218彼此藉著 解耦合電容410而互連。在本發明的較佳實施例中,四個物 件212-2 18係連接成介面對偶在不同的電位gnd及vcc ί請先聞讀背面之注意事唄再填寫本頁} • I. . * 、" —1 .^ϋ ·
經濟部中央標準局員工消费合作社印製 -A7 B7- 五、發明説明(10 ) 顯示)處。在所述的實施例中,對電容的連接是藉由從整的 每一物件至對應電容的線而達成的《所應注意的是:此解決 之道可爲電氣性能提供信號雜訊位準的減少》熟習此項技藝 的人士將會明瞭:即使這些物件212-218是由不可連線的窄區 域分離,此解搞合動作也可達成;在本發明的較佳實施例中 ,這些物件是由一夠寬的區域所分開以便提供上述的接線通 道。 如第4b圖的橫剖面圖所示,在基板120上表面的整係連著 基板120底表面上的替;特別是,物件216是藉由導電孔3 26 而連著另一物件336 ’而物件218是藉由熱孔道328而連接塾 3 3 8。這些在基板120底表面上的物件提供非常短的連線给接 合墊(VCC或GND),這些墊是出現在不需供這些連線用的 錯出孔之相同側。在G N D及V C C區域中的連接球是最後其 電阻値非常低的多個進接點。 具有元件解耦合之電子封裝的實施例係顯示在圖5中。 BGA 500是一種包括接地層342及電源層344的多層結構; 金屬化的孔326係連接著導電墊的物件2 16,而孔328係連接 著物件2 18 => 在圖5之特別有利的實施例中,在不同電位G N D及V C C處 的成介面對偶的連線是在相同的晶片載體上達成的,並使用 墊的每一物件之熱孔道作爲VCC或GND平面的連線,而且 電容們都組合成很靠近元件。在所述的實..施例中,物件216 是藉由孔326而連著接地平面342,而物件218是藉著孔328而 連著電源層344。 對電容5 10的連線是藉由金屬化的孔而達成的·,特別是, -13- 本纸法尺度適用中國國家標隼(CNS ) μ規格I: 210X 297公釐) ^各 ^JT. ^ 線 (請先閱讀背面之注意事項再填寫太頁) 五、發明説明(11 ) 電容510是藉由孔520而連接著接地居, _ 向错著另一孔530而 連著電源層344。本發明的實施例提昇 开;几件的電氣性能, 因而有了理想的元件解耦合,而不需要越過鑽出之孔而額外 接線來驅動從内層(VCC或GND)至層狀物上表面。 ' 一 裝 ; 、.1Tj 線 (請先閲讀背面之注意Ϋ項再填寫本頁) 經濟部中央標準局—工消費合作社印製 14- 本紙倀尺度適用中國國家標準(CNS ) A4规格(2l〇X 297公釐)

Claims (1)

  1. 經濟部中央標隼局員工消費合作社印製 A8 B8 C8 六、申請專利範圍 ι· 一種電子封裝(200),包括一基板(120)及至少一元件(ιι〇) 玄至少一元件(110)的每一個是藉由該基板(12〇)某一表 面上的導電墊而連接至該基板(12〇),其特徵在:該墊是 由複數個不相接的物件(212-218 )所組成。 2. 根據申請專利範圍第i項之電子封裝(2〇〇),其中該等物 件U12-218)是被該基板(120)的可接線區域(222_228)所 分開。 3. 根據申請專利範圍第2項之電子封裝(2〇〇),其中該元件 〇1〇)包括四個角落,該墊是由四個物件(212_218)所组成 ,而該可接線區域(222-228)具有從該等角落延伸出之十 字形。 4. 根據申請專利範圍第丨至3項中任一項之電子封裝,其中 該電子封裝是多晶片模組。 5. 根據申請專利範圍第1至3項中任一項的電子封裝, 其中至少該等物件的第一物件(216)係連著接地電位,而 至少該等物件的第二物件(218)係連著—電源電位,該第 —及第二物件(216、218)彼此藉由—解耦合電容(41〇)而 互連。 6. 根據申請專利範圍第i至3項中任一項之電子封裝(3〇〇), 其中該基板(310)包括至少一與該等物件(212·218)中的至 少一物件(216)相連的導電孔(326)。 7·根據申請專利範圍第6項之電子封裝(3〇〇),尚包括供應 在该基板(310)另一表面上的另一墊,該另—墊是由複數 個不相接的物件(334-338 )組成,該等物件的至少一個物 件(3 3 6 )係藉由至少該等孔之一個孔(3 2 6 )而連著該等物件 15- $紙》^中國國家梯準(CNS)八娜_ (21〇Χ29爾) (請先;8讀背面之注意事項再填寫本頁) 袈 訂 經濟部中央標隼局貝工消費合作社印製 A8 B8 -C8 六、申請專利範圍 中的對應物件(216)。 8. 根據中請專利範圍第6項之電子封裝(),其中該基板 (310)包,一接地層(342)及電源層(344),該第一物件 (2 16)是藉由孩等孔的第一孔而連著該接地層(342),而該 第一物件(218)疋藉由該等孔中的第二個孔(328)而接著該 電源層(344) » 9. 根據申請專利範圍第7項之電子封裝(4〇〇),其中該第一 物件(216 )是藉由該等物件的對應物件(3 26 )而連著該接地 電位’而該第二物件(218)係藉由該等物件的第二物件 (328 )而連著該電源電位。 10. 根據申請專利範圍第1、2、3、7、8或9項之電子封裝, 其中該電子封裝是球栅陣列構裝(B G A)。 -16- 本紙》尺度適用中國國家標準(CNS ) A4洗格(210 X 297公釐) (请先閲讀背面之注意事項再填寫本I) 3·
TW085105592A 1995-10-04 1996-05-11 TW299564B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT9500161 1995-10-04

Publications (1)

Publication Number Publication Date
TW299564B true TW299564B (zh) 1997-03-01

Family

ID=11332480

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085105592A TW299564B (zh) 1995-10-04 1996-05-11

Country Status (5)

Country Link
EP (1) EP0853817A1 (zh)
JP (1) JP3093278B2 (zh)
KR (1) KR100276858B1 (zh)
TW (1) TW299564B (zh)
WO (1) WO1997013275A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09175399A (ja) * 1995-12-28 1997-07-08 Motohiro Seisakusho:Kk コンテナなどの運搬車
KR100469911B1 (ko) * 1997-12-31 2005-07-07 주식회사 하이닉스반도체 레저바르커패시터의배열방법
JP2004214657A (ja) 2003-01-07 2004-07-29 Internatl Business Mach Corp <Ibm> プリント回路板製造用水溶性保護ペースト
JP5954013B2 (ja) 2012-07-18 2016-07-20 日亜化学工業株式会社 半導体素子実装部材及び半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595945A (en) * 1983-10-21 1986-06-17 At&T Bell Laboratories Plastic package with lead frame crossunder
JPS63245952A (ja) * 1987-04-01 1988-10-13 Hitachi Ltd マルチチップモジュ−ル構造体
EP0382203B1 (en) * 1989-02-10 1995-04-26 Fujitsu Limited Ceramic package type semiconductor device and method of assembling the same
JPH0422162A (ja) * 1990-05-17 1992-01-27 Hitachi Ltd リードフレームおよびそれを用いた半導体集積回路装置
JPH0494565A (ja) * 1990-08-10 1992-03-26 Toshiba Corp 半導体装置
JPH04139864A (ja) * 1990-10-01 1992-05-13 Seiko Epson Corp 半導体装置
JP2501953B2 (ja) * 1991-01-18 1996-05-29 株式会社東芝 半導体装置
US5258648A (en) * 1991-06-27 1993-11-02 Motorola, Inc. Composite flip chip semiconductor device with an interposer having test contacts formed along its periphery
US5355283A (en) * 1993-04-14 1994-10-11 Amkor Electronics, Inc. Ball grid array with via interconnection
US5474958A (en) * 1993-05-04 1995-12-12 Motorola, Inc. Method for making semiconductor device having no die supporting surface

Also Published As

Publication number Publication date
WO1997013275A1 (en) 1997-04-10
JPH11508409A (ja) 1999-07-21
JP3093278B2 (ja) 2000-10-03
KR100276858B1 (ko) 2001-01-15
EP0853817A1 (en) 1998-07-22
KR19990064001A (ko) 1999-07-26

Similar Documents

Publication Publication Date Title
US5825628A (en) Electronic package with enhanced pad design
TW415056B (en) Multi-chip packaging structure
US6677672B2 (en) Structure and method of forming a multiple leadframe semiconductor device
US6326696B1 (en) Electronic package with interconnected chips
TW516209B (en) High performance multi-chip IC package
US5222014A (en) Three-dimensional multi-chip pad array carrier
US6630373B2 (en) Ground plane for exposed package
TWI282154B (en) Die-up ball grid array package with a heat spreader and method for making the same
CA2233481C (en) Integrated circuit device cooling structure
US8525317B1 (en) Integrated chip package having intermediate substrate with capacitor
US20210202461A1 (en) Method for embedding silicon die into a stacked package
US7109573B2 (en) Thermally enhanced component substrate
KR100299560B1 (ko) 리드프레임리드와도전성트레이스를조합한고밀도집적회로어셈블리
US5500555A (en) Multi-layer semiconductor package substrate with thermally-conductive prepeg layer
TW391043B (en) Vertical semiconductor device package having printed circuit board and heat spreader, and module having the packages
TW299564B (zh)
US6954360B2 (en) Thermally enhanced component substrate: thermal bar
US7898078B1 (en) Power connector/decoupler integrated in a heat sink
JP2000323610A (ja) フィルムキャリア型半導体装置
TW472372B (en) Memory module with direct chip attach and the manufacturing process thereof
JPS6250981B2 (zh)
US7190056B2 (en) Thermally enhanced component interposer: finger and net structures
US20020050378A1 (en) Double-layered multiple chip module package
JPS6219072B2 (zh)
JPH0476211B2 (zh)