JP5509623B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5509623B2 JP5509623B2 JP2009046991A JP2009046991A JP5509623B2 JP 5509623 B2 JP5509623 B2 JP 5509623B2 JP 2009046991 A JP2009046991 A JP 2009046991A JP 2009046991 A JP2009046991 A JP 2009046991A JP 5509623 B2 JP5509623 B2 JP 5509623B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
- H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/26175—Flow barriers
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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Description
また、基板と、基板の貫通孔内に設けられた金属のヒートシンクとを備え、ヒートシンクと基板の貫通孔の内面とで凹み部が形成されていてもよい。
図3(C)の発光装置では、凹み部の一辺と約45度傾斜した矩形の凸部が、凹み部の中央付近に設けられている。
以上のように構成しても、本発明の効果を得ることができる。
また、(C)の発光装置では発光素子の角部に多くのダイボンド材が保持される為、特にθ方向の精度を向上する効果がある。
また(D)の発光装置では凸部の中央にさらに凹み部を設ける事でダイボンド材を保持できる面積が増大し、溶融したダイボンド材が発光素子中央部に集まり易い。これにより、ダイボンド材の広がりを抑制する効果が高い。
また、(E)、(F)、(G)、(H)、(J)、(K)の発光装置では凸部の側面の面積を増やす事でダイボンド材の濡れ面積を増している。これにより強いセルフアライメント効果が得られると共に、より強固に発光素子を接合する効果がある。
封止部材はどのような材料によって形成されていてもよい。たとえば、ポリフタルアミド(PPA)、ポリカーボネート樹脂、ポリフェニレンサルファイド(PPS)、液晶ポリマー(LCP)、ABS樹脂、エポキシ樹脂、シリコーン樹脂、フェノール樹脂、アクリル樹脂、PBT樹脂等の樹脂、硝子等が挙げられる。なかでも、透光性を有する部材であることが好ましい。これらの材料には、着色剤として、種々の染料または顔料等を混合して用いてもよい。なお、透光性とは、発光素子から出射された光を70%程度以上、80%程度以上、90%程度以上、95%程度以上透過させる性質を意味する。
101、201、301 発光素子
102、202 金属部材
103、303 凹み部
104、204、304 凸部・ヒートシンク
105、205 ダイボンド材
106、206 リード電極
107、207 ワイヤ
108、208 封止部材
209 基板
Claims (7)
- 上面に電極を有し底面が矩形である発光素子と、該発光素子が加熱溶融性のダイボンド材を介して上面に接合される金属部材と、前記発光素子を囲繞する壁部と、を有する発光装置であって、
前記金属部材の表面はAgのめっきが施されており、
前記金属部材は、前記発光素子の直下に、内部に凸部を有する凹み部を有し、
前記壁部に囲繞される前記金属部材の上面が、前記凸部の頂面と略等しい高さである平坦面であり、
前記凸部の頂面の面積は、前記半導体発光素子の底面の面積の50%以上であり、
前記凹み部の上面視の形状は、前記発光素子の底面より小さい矩形であり、
前記発光素子は、前記凹み部の周縁および凸部において前記ダイボンド材を介して支持されることを特徴とする発光装置。 - 前記凹み部の外周は、上面視から見て、前記発光素子の底面のおよそ0.80〜0.99倍の面積であることを特徴とする請求項1に記載の発光装置。
- 前記凸部は、前記金属部材の上面と略平行な頂面を有することを特徴とする請求項1ないし2に記載の発光装置。
- 前記凸部の頂面が矩形であり、該矩形の各辺が対向する前記発光素子の底面の端部の各辺との距離が略同一であることを特徴とする請求項1ないし3記載の発光装置。
- 前記発光素子の底面の形状が正方形であり、前記凹み部の上面視の形状が略相似の正方形であることを特徴とする請求項1ないし4記載の発光装置。
- 上面に電極を有し底面が矩形である発光素子と、該発光素子が加熱溶融性のダイボンド材を介して上面に接合される基板と、基板の貫通孔内に設けられた金属のヒートシンクとを備え、
前記発光素子の直下に、前記ヒートシンクと前記基板の貫通孔の内面とで凸部を有する凹み部が形成され、
前記凸部の頂面が、前記基板の上面と略等しい高さであり、
該凹み部の上面視の形状は、前記発光素子の底面より小さい矩形であり、
該発光素子は、前記凹み部の周縁および凸部において支持されることを特徴とする発光装置。 - 前記凹み部の外周の各辺と、対向する発光素子の底面の各辺との距離が略同一であることを特徴とする請求項1ないし請求項6に記載の発光装置。
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JP2009046991A JP5509623B2 (ja) | 2009-02-27 | 2009-02-27 | 発光装置 |
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JP2009046991A JP5509623B2 (ja) | 2009-02-27 | 2009-02-27 | 発光装置 |
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JP2010205788A JP2010205788A (ja) | 2010-09-16 |
JP5509623B2 true JP5509623B2 (ja) | 2014-06-04 |
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Families Citing this family (2)
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EP2994963B1 (en) * | 2013-05-08 | 2019-08-21 | Koninklijke Philips N.V. | Mounting layer for cooling structure |
JP2018032748A (ja) | 2016-08-24 | 2018-03-01 | パナソニックIpマネジメント株式会社 | 発光装置、照明装置及び発光装置の製造方法 |
Family Cites Families (7)
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JP3991624B2 (ja) * | 2001-06-26 | 2007-10-17 | 日亜化学工業株式会社 | 表面実装型発光装置及びその製造方法 |
JP2003258320A (ja) * | 2002-02-28 | 2003-09-12 | Rohm Co Ltd | 発光ダイオードランプ |
CN1531118A (zh) * | 2003-03-14 | 2004-09-22 | 徐杏芬 | 发光二极管的热传导及光度提升结构的改进 |
JP3905078B2 (ja) * | 2003-12-08 | 2007-04-18 | 京セラ株式会社 | 発光装置 |
JP4486451B2 (ja) * | 2004-09-07 | 2010-06-23 | スタンレー電気株式会社 | 発光装置、その発光装置に使用するリードフレーム、及びリードフレームの製造方法 |
JP4846515B2 (ja) * | 2006-10-18 | 2011-12-28 | 株式会社東芝 | 光半導体装置及び光半導体装置の製造方法 |
JP2010103149A (ja) * | 2008-10-21 | 2010-05-06 | Showa Denko Kk | 発光部材、発光装置、電子機器、機械装置、発光部材の製造方法、および発光装置の製造方法 |
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