CN103456683B - 形成通孔结构、制造图像传感器和集成电路器件的方法 - Google Patents

形成通孔结构、制造图像传感器和集成电路器件的方法 Download PDF

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CN103456683B
CN103456683B CN201310210045.7A CN201310210045A CN103456683B CN 103456683 B CN103456683 B CN 103456683B CN 201310210045 A CN201310210045 A CN 201310210045A CN 103456683 B CN103456683 B CN 103456683B
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CN103456683A (zh
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朴炳俊
申胜勋
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Samsung Electronics Co Ltd
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
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    • H10F39/10—Integrated devices
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    • H10F39/80—Constructional details of image sensors
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    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
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    • H10W20/211—Through-semiconductor vias, e.g. TSVs
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    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
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  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201310210045.7A 2012-05-30 2013-05-30 形成通孔结构、制造图像传感器和集成电路器件的方法 Active CN103456683B (zh)

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KR1020120057470A KR101934864B1 (ko) 2012-05-30 2012-05-30 관통 실리콘 비아 구조물 및 그 제조 방법, 이를 포함하는 이미지 센서 및 그 제조 방법
KR10-2012-0057470 2012-05-30

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