CN103443901A - 选择性沉积外延锗合金应力源的方法与设备 - Google Patents

选择性沉积外延锗合金应力源的方法与设备 Download PDF

Info

Publication number
CN103443901A
CN103443901A CN2011800695895A CN201180069589A CN103443901A CN 103443901 A CN103443901 A CN 103443901A CN 2011800695895 A CN2011800695895 A CN 2011800695895A CN 201180069589 A CN201180069589 A CN 201180069589A CN 103443901 A CN103443901 A CN 103443901A
Authority
CN
China
Prior art keywords
predecessor
gas
germanium
chamber
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011800695895A
Other languages
English (en)
Other versions
CN103443901B (zh
Inventor
埃罗尔·安东尼奥·C·桑切斯
戴维·K·卡尔森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201710735725.9A priority Critical patent/CN107675250B/zh
Publication of CN103443901A publication Critical patent/CN103443901A/zh
Application granted granted Critical
Publication of CN103443901B publication Critical patent/CN103443901B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明描述形成异质结应力源层的方法与设备。将锗前驱物与金属前驱物提供至腔室，并在基板上形成锗-金属合金的外延层。金属前驱物通常是金属卤化物，可由升华固态金属卤化物或通过卤素气体接触纯金属来提供金属卤化物。可通过喷头或通过侧进入点来提供前驱物，并可分开地加热耦接至腔室的排气系统以管理排气成分的凝结。

Description

选择性沉积外延锗合金应力源的方法与设备
发明背景
发明所属的技术领域
本文所述技术涉及半导体器件的制造。更具体地来说，描述利用应变材料(strained material)形成场效晶体管的方法。
相关技术的描述
锗是首先用于诸如CMOS晶体管的半导体应用的材料之一。然而，由于硅相对于锗的巨大含量，硅已经成为CMOS制造的压倒性半导体材料的选择。随着器件的几何尺寸根据摩尔定律减少，晶体管部件的尺寸对努力使器件更小、更快、利用更低功率并产生更低热量的工程师提出挑战。例如，随着晶体管尺寸减少，晶体管的沟道区域变得更小，并且因为沟道具有更高的电阻率与更高的阈值电压，沟道的电特性变得更不易维持。正如某些制造商已经对45纳米节点所做的那样，通过利用嵌在源极/漏极区中的硅-锗应力源（stressor）来提高硅沟道区中的载流子迁移率。然而，对于未来的节点来说，还是需要更高迁移率的器件。因此，持续需要用来形成高迁移率半导体器件的方法与设备。
发明概述
提供在半导体基板上形成应力源层的方法与设备。可通过以下步骤将锗应力源层形成于基板上：将基板置于处理腔室中；将锗前驱物流入处理腔室中；在处理腔室外形成应力源前驱物；将应力源前驱物流入处理腔室中；以及在基板上外延地生长锗应力源层。形成这些层的设备包括：旋转的基板支撑件，所述旋转的基板支撑件设置在封围件中；多个气体入口，所述多个气体入口形成于封围件的壁中；至少一个气体出口，所述至少一个气体出口形成于封围件的壁中；用以产生应力源前驱物的反应性或非反应性源，所述反应性或非反应性源由第一导管耦接至气体入口；用以提供锗前驱物的非反应性源，所述非反应性源由第二导管耦接至气体入口；以及经加热的排气系统。所述经加热的排气系统可具有用来降低排气成分附着的涂层，并且所述经加热的排气系统可包括凝结阱。
锗前驱物可以是氢化物，而应力源前驱物可以是金属卤化物。反应混合物中可包括选择性控制物种(例如，卤化物气体)，以控制基板的半导电与介电区域上的沉积选择性。
附图简要说明
可参照实施方式(某些实施方式描绘于附图中)来详细理解本发明的上述特征结构以及以上简要概述的有关本发明更特定的描述。然而，需注意附图仅描绘本发明的典型实施方式，因此不被视为本发明范围的限制因素，因为本发明可允许其他等效实施方式。
图1是概述根据一个实施方式的方法的流程图。
图2是概述根据另一个实施方式的方法的流程图。
图3是根据另一个实施方式的设备的示意图。
为了便于理解，已尽可能地应用相同的参考数字来标示各图示共有的相同的元件。预期一个实施方式中披露的元件可有利地用于其他实施方式而不需特别详述。
详细描述
图1是概述根据一个实施方式的方法100的流程图。在102时，将半导体基板置于处理腔室中。半导体基板可以是上面即将形成有应力源层的任何半导电材料。一个实例中，可以使用上面即将形成有晶体管构造的硅基板。在一些实施方式中，半导体基板的一个表面上可形成有介电区。例如，硅基板可具有邻近半导电源极/漏极区域形成的晶体管栅极构造以及介电间隔物，所述半导电源极/漏极区域可为掺杂硅的区域或者上面即将形成有源极/漏极材料的区域。因此，除了掺杂硅层以外，源极/漏极区域可包括本文所述的应力源层，或者源极/漏极区域可包括本文所述的应力源层来取代掺杂硅层。
本文所述的应力源层通常包括设置于锗基质中的金属原子GexMy。大金属原子(例如，大于锗的IV族金属，比如锡与铅)对添加压缩应力(compressivestress)至锗基质是有用的。锗晶体通常具有单位晶胞(unit cell)大小约为570皮米的立方体构造。各个锗原子的半径约为125皮米，而锡原子的半径约为145皮米、而铅的半径在155与180皮米之间。添加较大的金属原子至锗晶体基质导致较大的晶格尺寸，所述较大的晶格尺寸施加单轴压缩应力至侧边的锗原子和/或施加双轴拉伸应力至覆盖的锗原子。与未应变的锗相比，这样的应变提高局部电子的能量并降低锗的带隙，而导致较高的载流子迁移率。
在一个方面中，硅基板可具有锗沟道层，所述锗沟道层附近有应力源层，且应力源层即将形成为晶体管栅极构造的一部分。此情况下的GexMy应力源施加单轴应力至邻近的锗层上。在另一个方面中，在应力源层之上沉积锗沟道层，以致对锗沟道层施加双轴拉伸应力。
在104处，提供锗前驱物至包含半导体基板的处理腔室。锗前驱物通常为锗氢化物，比如锗烷(GeH4)、二锗烷(Ge2H6)或较高级的氢化物(GexH2x+2)，或上述的组合。锗前驱物可与载气混合，所述载气可为非反应性气体(例如，氮气、氢气)或惰性气体(例如，氦或氩)或上述的组合。锗前驱物体积流率与载气流率的比例可用来控制通过腔室的气体流速。根据所期望的流速，上述比例可以是约1%至约99%间的任何比例。在一些实施方式中，相对高的速度可改善形成的层的均匀性。在300毫米的单一晶片实施方式中，锗前驱物的流率可在约0.1sLm与约2.0sLm之间。对于体积约为50L的腔室来说，在上述锗前驱物的流率，约5sLm与约40sLm间的载气流率下提供均匀的层厚度。
在106处，提供金属卤化物至处理腔室以与锗前驱物反应并沉积金属掺杂的锗层。金属卤化物可为锡或铅卤化物气体(比如，SnCl4、SnCl2、PbCl4或PbCl2)或分子式为RxMCly的有机金属氯化物，其中R是甲基或叔丁基(t-butyl)，x是1或2，M是Sn或Pb，并且y是2或3，以致形成的层主要由IV族元素所构成。
邻近的锗层中实现的迁移率增强程度取决于晶格失配（mismatch）以及应力源层所施加的后续应力。所述晶格失配以及所述应力源层所施加的后续应力大致线性取决于应力源基质中金属原子的浓度。随着应力源中金属浓度的提高，由于轨道的弯曲与应变，邻近的受应力锗中的价电子能量提高，并且传导带(conduct band)的能量降低。在足够高的浓度下，半导体-金属合金变成直接带隙材料(即，金属的)。在一些实施方式中，限制金属浓度可有用于让合金保持间接带隙材料。晶体管应用中，在源极/漏极区域中维持间接带隙材料可降低泄漏。
在约10sccm与约300sccm之间(诸如约50sccm与约200sccm之间，例如约100sccm)的流率下提供金属卤化物至处理腔室。金属卤化物也可以与载气混合，以达到处理腔室中所期望的空间速度和/或混合性能。金属卤化物可源自升华进入流动载气流(例如，N2、H2、Ar或He)中的金属卤化物晶体的固态源，或者可将卤素气体(选择性地搭配上述载气之一)在接触腔室中在固态金属之上通过来产生金属卤化物，在接触腔室中进行反应M+2Cl2→MCl4，其中M为Sn或Pb。接触腔室可邻近于处理腔室，接触腔室由导管耦接至处理腔室，导管较佳是短的以降低金属卤化物微粒沉积于导管中的可能性。
通常通过不同路径提供金属卤化物与锗前驱物至处理腔室。通过第一路径提供锗前驱物，并通过第二路径提供金属卤化物。所述两个路径通常是不同的，且保持分离直到进入处理腔室的位置。在一个实施方式中，两个流通过邻近基板支撑件边缘的腔室侧壁进入，由一侧移动横跨基板支撑件至上述侧的相对侧并进入排气系统。基板支撑件可在应力层形成过程中旋转以改善均匀性。第一路径通常连通于进入处理腔室的第一进入点，所述第一进入点可包括腔室壁中或耦接至腔室壁的气体分配器(例如，喷头)中的一个或更多个开口。所述一个或更多个开口可如上面所描述地邻近基板支撑件的边缘，或者可以是双路径或多路径气体分配器中的入口。同样地，第二路径连通于第二进入点(与第一进入点相似)。所述第一与第二进入点经设置，以使两个流在基板支撑件上方的区域中混合并提供沉积或层生长混合物。在一些实施方式中，使用气体分配器可降低或消除处理过程中对旋转基板的需求。
对高结构品质而言，应力源层的生长通常是外延的。处理腔室中的压力被维持在约5Torr与约200Torr之间，诸如约20Torr与约80Torr之间，例如约40Torr。温度是在约150℃与约500℃之间，诸如约200℃与约400℃之间，例如约300℃。将温度维持在金属卤化物前驱物的分解温度(通常为约600℃或更低)以下。在一些实施方式中，压力可在约5Torr以下，但降低的压力也会降低沉积速率。在这些条件下，沉积速率是在约50埃/分
Figure BDA0000387294900000041
与约500埃/分之间。
在108处，根据以下反应形成锗应力源层或锗金属合金层：
　MCl4+GeH4→MH2Cl2+GeH2Cl2
　MH2Cl2+H2→M+2HCl+H2
　GeH2Cl2+H2→Ge+2HCl+H2
其中M为Sn或Pb。相似反应发生于上述的有机金属氯化物。较高阶的锗烷产生氯化锗烷中间物的混合物，所述氯化锗烷中间物的混合物会相似地分解成锗沉积物。可提供氢气至腔室以促进沉积反应。约5sLm与约40sLm之间的氢气流率可包含于任何或所有的前驱物以提供环境氢气浓度。
层的通常沉积厚度是在约300埃与约800埃之间。根据方法100，锗基质中的锡原子浓度可在约1%与约12%之间，诸如约3%与约9%之间，例如约6%。若使用铅的话，锗基质中的铅原子浓度可在约0.2%与约5%之间，诸如约1%与约3%之间，例如约2%。如果需要的话，可使用铅与锡的混合物。比起锡而言，铅可在较低剂量下实现较高的带隙降低，且在一些实施方式中，利用铅与锡的混合物可有利地提供具有带隙降低的某些增强的可加工性（processability）(即，在提高的温度下，锡卤化物比铅卤化物更稳定)。
图2是概述根据另一个实施方式的方法200的流程图。方法200在许多方面与方法100相似，且在处理具有半导电与介电区域的基板时可用来实现相似结果。在202处，将具有半导电与介电特征结构的基板置入具有参照图1如上所述的特征的处理腔室中。在204处，通过第一路径将锗前驱物(可以是参照图1所述的任何锗前驱物)提供至处理腔室。在206处，可通过第二路径将锡前驱物或铅前驱物，或锡前驱物与铅前驱物的混合物提供至处理腔室，锡与铅前驱物可以是参照图1如上所述的任何锡或铅前驱物。
在208处，将沉积控制物种提供至处理腔室。提供沉积控制物种以控制基板表面上锗、锡和/或铅的沉积。比起半导电区域，沉积控制物种自基板的介电区域更快速地选择性地移除沉积物种。因此，沉积控制物种可以是选择性控制物种，因为在一些实施方式中，可通过调整反应混合物中选择性控制物种相对于反应物种的数量来控制选择性。
沉积控制物种通常是含卤素物种，例如卤化物(比如，HCl、HF或HBr)。在一个实施方式中，沉积控制物种是HCl。可在约10sccm与约1000sccm间的流率下提供沉积控制物种，所述流率是在诸如约100sccm与约500sccm之间，例如约200sccm。可通过调整沉积控制物种与锗前驱物的体积比来控制层生长选择性与沉积速率。较高的比例降低整体的沉积速率但改善了选择性。对大部分实施方式来说，沉积控制物种与锗前驱物的体积流率比的范围是在约0.01与约0.1之间，诸如约0.02与约0.06之间，例如约0.04。在范围的最顶端处，沉积速率约为50埃/分，而在范围的最低处，沉积速率为约500埃/分。然而，在范围的最顶端处，并没有发现基板的介电区域上的膜生长，而在范围的最低处，半导电区域上的沉积速率是介电区域上的沉积速率的约50倍。
通过改变并入应力源基质中的金属浓度而在低金属浓度下可以控制由应力源层引入的压缩应力的量。可通过调整反应混合物中金属前驱物与锗前驱物的比例来控制金属浓度。对大部分实施方式而言，提供至处理腔室的金属前驱物与锗前驱物的体积流率的比例将在约1%与约20%之间，诸如约4%与约12%之间，例如约8%。
图3是根据另一个实施方式的设备300的示意图。设备300能用来执行本文所述形成应力层的方法。处理腔室302具有基板支撑件308，所述基板支撑件308可以是旋转的基板支撑件，且所述基板支撑件308设置在所述处理腔室302的内部中。面对所述基板支撑件308的一侧来设置加热源306。或者，加热源可嵌于所述基板支撑件308中。2007年2月6日核发的共同受让美国专利第7172792号(名称为“Method for forming a high quality low temperaturesilicon nitride film”)中描述的具有经加热基板支撑件的腔室可适于构建本文所述的设备并执行本文所述的方法。2008年3月27日公开的共同受让美国专利公开文献第2008/0072820号(名称为“Modular CVD Epi 300mm Reactor”)中描述的具有灯加热模组的腔室也可以适于构建本文所述的设备并执行本文所述的方法。EpiTM300mm反应器或300mm xGenTM腔室(两个均可自California(加利福尼亚)州Santa Clara（圣克拉拉）的Applied Mterials,Inc.(应用材料公司)取得)可适以进行并使用本文所述的实施方式。所述处理腔室302可具有让气体进入腔室的喷头304。或者，可通过侧进入点320将气体提供至处理腔室，所述侧进入点320耦接至所述腔室302的侧壁360。
馈送系统328(包括化学输送系统310与金属前驱物接触腔室312)通过多个导管耦接至所述腔室302。第一导管322与第二导管324可耦接所述馈送系统328至选择性的喷头304。为了执行本文所述的方法，所述喷头304可以是双-路径喷头(dual-pathway showerhead)，以避免在进入所述腔室302之前的前驱物混合。示范性双-路径喷头描述于2006年1月10日核发的共同受让美国专利第6,983,892号(名称为“Gas distribution showerhead for semiconductorprocessing”)。
可选地或额外地，可通过提供第一与第二横流式（cross-flow）气体导管316与318至所述侧进入点320来执行横流式气体注入。横流式注入构造的实例描述于美国专利第6,500,734号中。所述设备300可包括喷头构造与横流式注入构造两者，或仅有一个构造或另一个构造。
所述化学输送系统310输送锗前驱物(选择性与载气(比如氮气和/或氢气)一起)至所述腔室302。所述化学输送系统310也可以输送沉积或选择性控制物种至所述腔室302。所述化学输送系统310可包括液态或气态源与控制器(未图示)，所述化学输送系统310可构造于气体面板中。
所述接触腔室312可通过导管314耦接所述侧进入点320或所述喷头304中的任一个，所述导管314被设置用来携带金属前驱物至所述腔室302。可将所述导管314、316与322加热至约50℃与约200℃间的温度，以控制或避免金属卤化物物种凝结于所述导管314、316与322中。所述接触腔室312通常包含固态金属或金属卤化物晶体的床。通过气体馈送导管362与364之一或两者提供载气，而金属卤化物晶体可升华进入载气。通过所述气体馈送导管362与364之一或两者提供卤素气体源，而固态金属可接触卤素气体源。在一个实施方式中，通过第一气体馈送导管362提供卤素气体源，而通过第二气体馈送导管364提供载气。可将用于升华或反应任一个的气体流过粉末状的金属或金属卤化物流体化床以增进接触。网孔过滤器（mesh strainer）或滤件可用来避免夹带颗粒进入所述腔室302。或者，气体可流过固定的固态金属或金属卤化物床。
排气系统330耦接至所述腔室302。所述排气系统330可在任何方便位置耦接至腔室，方便位置可取决于气体进入腔室的位置。针对通过所述喷头304气体而言，排气系统可例如通过一个或更多个入口或通过环形开口围绕所述加热源306耦接至腔室的底部壁。在一些实施方式中，环形歧管可设置在基板支撑件的边缘附近并耦接至所述排气系统330。对横流式实施方式来说，所述排气系统330可耦接至与所述侧进入点320相对的腔室侧壁。
排气导管340通过节流阀366耦接排气盖332至真空泵352。护套368自所述排气盖332至所述真空泵352的入口350围绕所述排气导管340与所述节流阀366。所述护套368允许热控制所述排气导管340以避免排气物种凝结于管线中。任何加热媒介(比如，蒸气或热空气、水或其他热流体)可用来维持排气导管的温度在排气气体的露点(dew point)以上。或者，护套可包括电阻式加热元件(即，电热毯)。如果需要的话，凝结阱(condensation trap)336可通过阀338耦接至所述排气导管340，以进一步增强所述排气系统330中任何凝结物的获取。所述真空泵352通过减弱（abatement）导管354清理(pay off)至减弱系统356，所述减弱导管354通常是未加热或不具护套的，且清洁后的气体在358处排放。为了进一步降低所述排气导管340中的潮湿或成核作用，所述排气导管340可涂覆有石英或惰性聚合物材料。
可通过活性源334将等离子体或紫外光活化的清洁剂耦接进入所述排气系统330，所述活性源334可耦接至微波或RF腔室以产生活性清洁物种。清洁气体管线326可从所述化学输送系统310提供清洁气体至所述排气导管340，如果需要的话，可让清洁气体前进通过所述活性源334。使用活性物种进行清洁使得清洁能在降低的温度下进行。
清洁腔室的方法包括提供卤素气体至腔室、转换残余物成可挥发卤化物，所述腔室是用来执行本文所述方法的腔室(例如，所述腔室302)或任何用以执行方法100与200的腔室。在清洁过程中通常将腔室的温度维持在约600℃以下，并且将金属沉积物转换成MClx，通常为SnClx或PbClx。所述卤素气体可以是氯气、氟气、HCl或HF。可将腔室加热至不需要独立加热排气导管的程度，特别是在隔离排气导管的情况下。或者，如果需要的话，可将腔室温度维持在约400℃以下，并加热所述排气导管340以避免凝结。
形成应力源层的替代实施方式可包括形成实质纯外延锗层并接着形成金属-掺杂外延锗层的循环处理，通常根据上述方案通过在维持锗前驱物的流动时开始与结束金属前驱物的流动来形成纯层与掺杂层。其他实施方式中，可通过下述步骤来形成具有分级应力的层：建立锗前驱物的流动达一时间周期以形成实质纯锗的外延初始层；在初始流率下开始金属前驱物的流动；然后根据任何所期望的模式(线性或非线性的)提高金属前驱物的流率至最终流率。这样的分级应力层可更强力地附着至下层同时提供增加的电子迁移率。
虽然上述是针对本发明的实施方式，但可以在不悖离本发明的基本范围下设计出本发明的其他以及更多实施方式。

Claims (16)

1.一种在基板上形成数个锗应力源层的方法，所述方法包括：
将所述基板置于处理腔室中；
将锗前驱物流入所述处理腔室中；
在反应空间中形成金属卤化物应力源前驱物，所述反应空间耦接至所述处理腔室；
将所述应力源前驱物流入所述处理腔室中；以及
在所述基板上外延生长所述锗应力源层。
2.如权利要求1所述的方法，进一步包括将选择性控制物种流入所述腔室中。
3.如权利要求2所述的方法，其中所述基板包括数个介电区域与数个半导电区域，且所述选择性控制物种控制所述锗应力源层在所述介电区域与半导电区域上的相对生长速率。
4.如权利要求1所述的方法，其中形成所述应力源前驱物的步骤包括将含卤素的载气流过固态金属材料。
5.如权利要求1所述的方法，其中所述应力源前驱物包括具有通式RxSnCly的有机锡氯化物，其中R是甲基或叔丁基、x是1或2且y是2或3，且所述应力源前驱物由无水固态晶体升华进入载气流，且所述载气流包括N2、H2、Ar或He。
6.如权利要求1所述的方法，其中所述锗前驱物是锗烷或二锗烷，且所述应力源前驱物是有机锡氯化物。
7.如权利要求1所述的方法，其中所述锗前驱物与所述应力源前驱物从所述腔室的一侧流动横跨所述腔室而至所述腔室的相对侧。
8.如权利要求1所述的方法，其中所述锗前驱物与所述应力源前驱物通过喷头流入所述腔室中。
9.如权利要求3所述的方法，其中所述选择性控制物种选择性地移除所述基板的所述介电区域上沉积的材料。
10.如权利要求2所述的方法，其中在所述基板上外延生长所述锗应力源层的步骤包括维持所述处理腔室在约5Torr与约80Torr之间的压力下，且维持所述处理腔室在约150℃与约400℃之间的温度下。
11.如权利要求10所述的方法，其中所述应力源前驱物与所述选择性控制物种的流率比例是在约2：1与约100：1之间。
12.一种在基板上形成应力源层的设备，所述设备包括：
旋转的基板支撑件，所述旋转的基板支撑件设置于封围件中；
多个气体入口，所述多个气体入口形成于所述封围件的壁中；
至少一个气体出口，所述至少一个气体出口形成于所述封围件的壁中；
反应性前驱物产生器，所述反应性前驱物产生器通过第一导管耦接至一气体入口；
非反应性前驱物源，所述非反应性前驱物源通过第二导管耦接至一气体入口；以及
经加热的排气系统，所述经加热的排气系统包括凝结阱。
13.如权利要求12所述的设备，其中所述至少一个气体入口形成于所述基板支撑件附近的所述封围件的壁中，且所述反应性源耦接至卤化物源。
14.如权利要求12所述的设备，其中所述经加热的排气系统包括护套管与阀以及降低附着涂层。
15.如权利要求14所述的设备，其中所述经加热的排气系统进一步包括真空泵，且所述护套管与阀终止于所述真空泵的入口。
16.一种在基板上形成应力源层的设备，所述设备包括：
旋转的基板支撑件，所述旋转的基板支撑件设置于封围件中；
加热源，所述加热源设置于所述封围件中并且在所述基板支撑件下方；
气体入口，所述气体入口形成于邻近所述基板支撑件的边缘的所述封围件的侧壁中，且所述气体入口具有流动方向，且所述流动方向实质平行于所述基板支撑件的上表面；
气体出口，所述气体出口形成于与所述气体入口相对且邻近所述基板支撑件的所述边缘的侧壁中；
第一前驱物路径，所述第一前驱物路径耦接至所述气体入口与锗氢化物源；
第二前驱物路径，所述第二前驱物路径耦接至所述气体入口，并且耦接至金属卤化物源或有机金属卤化物源；以及
排气系统，所述排气系统包括耦接所述气体出口至真空泵的护套管与阀。
CN201180069589.5A 2011-03-28 2011-07-28 选择性沉积外延锗合金应力源的方法与设备 Active CN103443901B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710735725.9A CN107675250B (zh) 2011-03-28 2011-07-28 选择性沉积外延锗合金应力源的方法与设备

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161468443P 2011-03-28 2011-03-28
US61/468,443 2011-03-28
PCT/US2011/045795 WO2012134512A1 (en) 2011-03-28 2011-07-28 Method and apparatus for the selective deposition of epitaxial germanium stressor alloys

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710735725.9A Division CN107675250B (zh) 2011-03-28 2011-07-28 选择性沉积外延锗合金应力源的方法与设备

Publications (2)

Publication Number Publication Date
CN103443901A true CN103443901A (zh) 2013-12-11
CN103443901B CN103443901B (zh) 2017-09-15

Family

ID=46925557

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710735725.9A Active CN107675250B (zh) 2011-03-28 2011-07-28 选择性沉积外延锗合金应力源的方法与设备
CN201180069589.5A Active CN103443901B (zh) 2011-03-28 2011-07-28 选择性沉积外延锗合金应力源的方法与设备

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201710735725.9A Active CN107675250B (zh) 2011-03-28 2011-07-28 选择性沉积外延锗合金应力源的方法与设备

Country Status (7)

Country Link
US (2) US9476144B2 (zh)
KR (1) KR101883360B1 (zh)
CN (2) CN107675250B (zh)
DE (1) DE112011105102T5 (zh)
SG (2) SG10201601916TA (zh)
TW (1) TWI534863B (zh)
WO (1) WO2012134512A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108336013A (zh) * 2012-12-31 2018-07-27 太阳能爱迪生半导体有限公司 用于制备具有通过径向压缩降低的应变的异质结构的方法和装置
WO2020082282A1 (en) * 2018-10-25 2020-04-30 China Triumph International Engineering Co., Ltd. Vapor deposition apparatus and use thereof

Families Citing this family (251)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
WO2013163192A1 (en) * 2012-04-24 2013-10-31 Applied Materials, Inc. Gas reclamation and abatement system for high volume epitaxial silicon deposition system
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9396934B2 (en) * 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US9218963B2 (en) * 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
SG11201607337TA (en) * 2014-03-05 2016-10-28 Silverstream Technologies B V Use of an air lubrication system for reducing marine growth on a vessel
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9704708B2 (en) 2014-07-11 2017-07-11 Applied Materials, Inc. Halogenated dopant precursors for epitaxy
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
JP6371738B2 (ja) * 2015-05-28 2018-08-08 株式会社東芝 成膜装置
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10957561B2 (en) * 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
JP6391171B2 (ja) * 2015-09-07 2018-09-19 東芝メモリ株式会社 半導体製造システムおよびその運転方法
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
TWI751158B (zh) * 2016-07-06 2022-01-01 荷蘭商Ａｓｍ智慧財產控股公司 包括鍺-錫膜之結構與裝置及該膜之形成方法
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
WO2018016375A1 (ja) 2016-07-20 2018-01-25 昭和電工株式会社 ガス供給装置及びガス供給方法
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) * 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． バッチ炉で利用されるウェハカセットを収納するための収納装置
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TW202409324A (zh) 2018-06-27 2024-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
JP7080140B2 (ja) * 2018-09-06 2022-06-03 東京エレクトロン株式会社 基板処理装置
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
TWI844567B (zh) 2018-10-01 2024-06-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材保持裝置、含有此裝置之系統及其使用之方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
CN110777436A (zh) * 2019-11-05 2020-02-11 中国科学院半导体研究所 硅基iv族合金材料及其外延方法
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
KR20210089079A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
CN113445029A (zh) * 2020-03-25 2021-09-28 拓荆科技股份有限公司 双面沉积设备及方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR102707957B1 (ko) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1822337A (zh) * 2005-01-15 2006-08-23 应用材料公司 具有锗化硅材料和受应力氮化硅层的衬底
US20070020891A1 (en) * 2003-06-13 2007-01-25 Arizona Board Of Regents Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
US20090087967A1 (en) * 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth
US20090111246A1 (en) * 2007-10-26 2009-04-30 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US20090250641A1 (en) * 2008-04-07 2009-10-08 Komatsu Ltd. Extreme ultra violet light source apparatus
CN101563156A (zh) * 2006-12-22 2009-10-21 Ifp公司 在具有优化的双金属性指数和氢吸附能力的双金属或多金属催化剂的存在下的含烃物料的脱氢方法
CN101831629A (zh) * 2007-10-26 2010-09-15 应用材料股份有限公司 具有前驱物源的喷头设计

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2742383A (en) 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
US6500734B2 (en) * 1993-07-30 2002-12-31 Applied Materials, Inc. Gas inlets for wafer processing chamber
JP2845422B2 (ja) 1994-06-03 1999-01-13 住友金属鉱山株式会社 プラズマｃｖｄ装置
US5548128A (en) 1994-12-14 1996-08-20 The United States Of America As Represented By The Secretary Of The Air Force Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates
JP4222707B2 (ja) * 2000-03-24 2009-02-12 東京エレクトロン株式会社 プラズマ処理装置及び方法、ガス供給リング及び誘電体
US20040129212A1 (en) 2002-05-20 2004-07-08 Gadgil Pradad N. Apparatus and method for delivery of reactive chemical precursors to the surface to be treated
JP4016823B2 (ja) * 2002-12-06 2007-12-05 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JP4954448B2 (ja) * 2003-04-05 2012-06-13 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 有機金属化合物
WO2004114368A2 (en) * 2003-06-13 2004-12-29 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University METHOD FOR PREPARING GE1-x-ySnxEy (E=P, As, Sb) SEMICONDUCTORS AND RELATED Si-Ge-Sn-E AND Si-Ge-E ANALOGS
US7553467B2 (en) * 2003-08-13 2009-06-30 Tokuyama Corporation Tubular reaction vessel and process for producing silicon therewith
NO20045674D0 (no) * 2004-12-28 2004-12-28 Uni I Oslo Thin films prepared with gas phase deposition technique
JP2008532294A (ja) * 2005-03-11 2008-08-14 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ 新規なＧｅＳｉＳｎベースの化合物、テンプレート、及び半導体構造
US7470972B2 (en) 2005-03-11 2008-12-30 Intel Corporation Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress
WO2007106076A2 (en) * 2006-03-03 2007-09-20 Prasad Gadgil Apparatus and method for large area multi-layer atomic layer chemical vapor processing of thin films
WO2008082457A1 (en) * 2006-12-27 2008-07-10 Exxonmobil Research And Engineering Company Catalyst treatment apparatus and process
US8404499B2 (en) * 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
TW201039381A (en) * 2009-04-29 2010-11-01 Applied Materials Inc Method of forming in-situ pre-GaN deposition layer in HVPE
CN101928990A (zh) * 2009-06-26 2010-12-29 中国科学院半导体研究所 GeSn合金的外延生长方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070020891A1 (en) * 2003-06-13 2007-01-25 Arizona Board Of Regents Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
CN1822337A (zh) * 2005-01-15 2006-08-23 应用材料公司 具有锗化硅材料和受应力氮化硅层的衬底
US20090087967A1 (en) * 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth
CN101563156A (zh) * 2006-12-22 2009-10-21 Ifp公司 在具有优化的双金属性指数和氢吸附能力的双金属或多金属催化剂的存在下的含烃物料的脱氢方法
US20090111246A1 (en) * 2007-10-26 2009-04-30 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
CN101831629A (zh) * 2007-10-26 2010-09-15 应用材料股份有限公司 具有前驱物源的喷头设计
US20090250641A1 (en) * 2008-04-07 2009-10-08 Komatsu Ltd. Extreme ultra violet light source apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108336013A (zh) * 2012-12-31 2018-07-27 太阳能爱迪生半导体有限公司 用于制备具有通过径向压缩降低的应变的异质结构的方法和装置
CN108336013B (zh) * 2012-12-31 2023-10-03 环球晶圆股份有限公司 用于制备具有通过径向压缩降低的应变的异质结构的方法和装置
WO2020082282A1 (en) * 2018-10-25 2020-04-30 China Triumph International Engineering Co., Ltd. Vapor deposition apparatus and use thereof

Also Published As

Publication number Publication date
TWI534863B (zh) 2016-05-21
US9476144B2 (en) 2016-10-25
US20170037536A1 (en) 2017-02-09
CN107675250B (zh) 2020-08-07
US20120247386A1 (en) 2012-10-04
SG193516A1 (en) 2013-10-30
CN107675250A (zh) 2018-02-09
TW201239952A (en) 2012-10-01
KR101883360B1 (ko) 2018-07-30
SG10201601916TA (en) 2016-04-28
KR20140031210A (ko) 2014-03-12
DE112011105102T5 (de) 2014-01-02
CN103443901B (zh) 2017-09-15
WO2012134512A1 (en) 2012-10-04

Similar Documents

Publication Publication Date Title
CN103443901A (zh) 选择性沉积外延锗合金应力源的方法与设备
TWI598458B (zh) 藉由熱ｃｖｄ形成鍺錫合金之方法與設備
US20130183814A1 (en) Method of depositing a silicon germanium tin layer on a substrate
KR102572854B1 (ko) 실리콘 나이트라이드의 선택적 성장
KR102439698B1 (ko) Peald 프로세스 및 열적 ald 프로세스에 의해 형성된 나이트라이드 막
TWI589722B (zh) 用以透過與有機金屬共反應物之交叉歧化反應而沉積ＳｉＣ與ＳｉＣＮ膜之設備及方法
US9984868B2 (en) PEALD of films comprising silicon nitride
US20130330911A1 (en) Method of semiconductor film stabilization
KR20190126256A (ko) 플라즈마 활성화된 등각 막 성막을 위한 전구체들
KR20180087441A (ko) W ald 프로세스에 대한 핵형성 층으로서의 컨포멀한 비정질 실리콘
KR20150079470A (ko) 펄싱된 플라즈마 노출을 사용하여 플라즈마 강화된 원자층 증착
US20040152287A1 (en) Deposition of a silicon film
TWI715572B (zh) 用於沉積低ｋ及低濕式蝕刻率介電薄膜的方法
JP2007509836A (ja) 窒化シリコンの低温堆積
JP2011511160A (ja) β−ジケチミナト配位子含有新金属前駆体
KR20140113724A (ko) 기판 상에 ⅲ-ⅴ족 층을 퇴적하기 위한 방법
US9029264B2 (en) Methods for depositing a tin-containing layer on a substrate
CN115803473A (zh) 钼的沉积
US7727590B2 (en) Robust filament assembly for a hot-wire chemical vapor deposition system
WO2023230296A1 (en) Single wafer reactor, low temperature, thermal silicon nitride deposition

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant