CN1034373C - 能预激励的升压电路器件和半导体存储器 - Google Patents

能预激励的升压电路器件和半导体存储器 Download PDF

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Publication number
CN1034373C
CN1034373C CN94104668A CN94104668A CN1034373C CN 1034373 C CN1034373 C CN 1034373C CN 94104668 A CN94104668 A CN 94104668A CN 94104668 A CN94104668 A CN 94104668A CN 1034373 C CN1034373 C CN 1034373C
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CN
China
Prior art keywords
circuit
voltage
signal
pulse
clock signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN94104668A
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English (en)
Chinese (zh)
Other versions
CN1095189A (zh
Inventor
前田敏夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Japan Display Inc
Original Assignee
Hitachi Device Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Device Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Device Engineering Co Ltd
Publication of CN1095189A publication Critical patent/CN1095189A/zh
Application granted granted Critical
Publication of CN1034373C publication Critical patent/CN1034373C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)
CN94104668A 1993-04-26 1994-04-25 能预激励的升压电路器件和半导体存储器 Expired - Fee Related CN1034373C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP121955/93 1993-04-26
JP5121955A JPH06309868A (ja) 1993-04-26 1993-04-26 半導体記憶装置

Publications (2)

Publication Number Publication Date
CN1095189A CN1095189A (zh) 1994-11-16
CN1034373C true CN1034373C (zh) 1997-03-26

Family

ID=14824052

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94104668A Expired - Fee Related CN1034373C (zh) 1993-04-26 1994-04-25 能预激励的升压电路器件和半导体存储器

Country Status (4)

Country Link
US (1) US5426333A (https=)
JP (1) JPH06309868A (https=)
CN (1) CN1034373C (https=)
TW (1) TW310430B (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3090833B2 (ja) * 1993-12-28 2000-09-25 株式会社東芝 半導体記憶装置
JP2679617B2 (ja) * 1994-04-18 1997-11-19 日本電気株式会社 チャージポンプ回路
KR0149224B1 (ko) * 1994-10-13 1998-10-01 김광호 반도체 집적장치의 내부전압 승압회로
US5677645A (en) * 1995-05-08 1997-10-14 Micron Technology, Inc. Vccp pump for low voltage operation
JPH0935474A (ja) * 1995-07-19 1997-02-07 Fujitsu Ltd 半導体記憶装置
KR0179852B1 (ko) * 1995-10-25 1999-04-15 문정환 차지 펌프 회로
US5793246A (en) 1995-11-08 1998-08-11 Altera Corporation High voltage pump scheme incorporating an overlapping clock
KR0170903B1 (ko) * 1995-12-08 1999-03-30 김주용 하위 워드 라인 구동 회로 및 이를 이용한 반도체 메모리 장치
US5767734A (en) * 1995-12-21 1998-06-16 Altera Corporation High-voltage pump with initiation scheme
KR0172370B1 (ko) * 1995-12-30 1999-03-30 김광호 다단펌핑 머지드 펌핑전압 발생회로
JP3768608B2 (ja) * 1996-01-30 2006-04-19 株式会社日立製作所 半導体装置および半導体記憶装置
US5774405A (en) * 1996-03-28 1998-06-30 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory having an internal circuit using a boosted potential
US6209071B1 (en) * 1996-05-07 2001-03-27 Rambus Inc. Asynchronous request/synchronous data dynamic random access memory
JPH11260053A (ja) 1998-03-12 1999-09-24 Nec Corp 半導体記憶装置の昇圧回路
JP3346273B2 (ja) * 1998-04-24 2002-11-18 日本電気株式会社 ブースト回路および半導体記憶装置
US6044026A (en) 1998-06-05 2000-03-28 Micron Technology, Inc. Trap and delay pulse generator for a high speed clock
US6628564B1 (en) * 1998-06-29 2003-09-30 Fujitsu Limited Semiconductor memory device capable of driving non-selected word lines to first and second potentials
KR100557569B1 (ko) * 1998-12-28 2006-05-22 주식회사 하이닉스반도체 차지 펌프 회로
US6320797B1 (en) 1999-02-24 2001-11-20 Micron Technology, Inc. Method and circuit for regulating the output voltage from a charge pump circuit, and memory device using same
US6160723A (en) 1999-03-01 2000-12-12 Micron Technology, Inc. Charge pump circuit including level shifters for threshold voltage cancellation and clock signal boosting, and memory device using same
JP2001297584A (ja) * 2000-04-13 2001-10-26 Nec Corp 半導体記憶装置の昇圧回路
US6606271B2 (en) * 2001-05-23 2003-08-12 Mircron Technology, Inc. Circuit having a controllable slew rate
US6717459B2 (en) * 2002-02-21 2004-04-06 Micron Technology, Inc. Capacitor charge sharing charge pump
KR100604657B1 (ko) * 2004-05-06 2006-07-25 주식회사 하이닉스반도체 최적화된 내부전압을 공급할 수 있는 전원공급회로를구비하는 반도체 메모리 장치
JP4785411B2 (ja) * 2004-07-16 2011-10-05 セイコーインスツル株式会社 チャージポンプ回路
KR100757410B1 (ko) 2005-09-16 2007-09-11 삼성전자주식회사 상 변화 메모리 장치 및 그것의 프로그램 방법
US10186309B2 (en) * 2016-06-29 2019-01-22 Samsung Electronics Co., Ltd. Methods of operating semiconductor memory devices and semiconductor memory devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333205A (en) * 1964-10-02 1967-07-25 Ibm Timing signal generator with frequency keyed to input
US4670668A (en) * 1985-05-09 1987-06-02 Advanced Micro Devices, Inc. Substrate bias generator with power supply control means to sequence application of bias and power to prevent CMOS SCR latch-up

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits

Also Published As

Publication number Publication date
US5426333A (en) 1995-06-20
CN1095189A (zh) 1994-11-16
TW310430B (https=) 1997-07-11
JPH06309868A (ja) 1994-11-04

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