JPH06309868A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPH06309868A
JPH06309868A JP5121955A JP12195593A JPH06309868A JP H06309868 A JPH06309868 A JP H06309868A JP 5121955 A JP5121955 A JP 5121955A JP 12195593 A JP12195593 A JP 12195593A JP H06309868 A JPH06309868 A JP H06309868A
Authority
JP
Japan
Prior art keywords
circuit
output
pumping
signal
boosted voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5121955A
Other languages
English (en)
Japanese (ja)
Inventor
Toshio Maeda
敏夫 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Japan Display Inc
Original Assignee
Hitachi Device Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Device Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Device Engineering Co Ltd
Priority to JP5121955A priority Critical patent/JPH06309868A/ja
Priority to TW083103361A priority patent/TW310430B/zh
Priority to US08/231,126 priority patent/US5426333A/en
Priority to CN94104668A priority patent/CN1034373C/zh
Publication of JPH06309868A publication Critical patent/JPH06309868A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Dc-Dc Converters (AREA)
JP5121955A 1993-04-26 1993-04-26 半導体記憶装置 Pending JPH06309868A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP5121955A JPH06309868A (ja) 1993-04-26 1993-04-26 半導体記憶装置
TW083103361A TW310430B (https=) 1993-04-26 1994-04-15
US08/231,126 US5426333A (en) 1993-04-26 1994-04-22 Boosting circuit device capable of pre-pumping and semiconductor memory device
CN94104668A CN1034373C (zh) 1993-04-26 1994-04-25 能预激励的升压电路器件和半导体存储器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5121955A JPH06309868A (ja) 1993-04-26 1993-04-26 半導体記憶装置

Publications (1)

Publication Number Publication Date
JPH06309868A true JPH06309868A (ja) 1994-11-04

Family

ID=14824052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5121955A Pending JPH06309868A (ja) 1993-04-26 1993-04-26 半導体記憶装置

Country Status (4)

Country Link
US (1) US5426333A (https=)
JP (1) JPH06309868A (https=)
CN (1) CN1034373C (https=)
TW (1) TW310430B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6226206B1 (en) 1998-03-12 2001-05-01 Nec Corporation Semiconductor memory device including boost circuit
JP2001297584A (ja) * 2000-04-13 2001-10-26 Nec Corp 半導体記憶装置の昇圧回路
US7471553B2 (en) 2005-09-16 2008-12-30 Samsung Electronics Co., Ltd. Phase change memory device and program method thereof

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3090833B2 (ja) * 1993-12-28 2000-09-25 株式会社東芝 半導体記憶装置
JP2679617B2 (ja) * 1994-04-18 1997-11-19 日本電気株式会社 チャージポンプ回路
KR0149224B1 (ko) * 1994-10-13 1998-10-01 김광호 반도체 집적장치의 내부전압 승압회로
US5677645A (en) * 1995-05-08 1997-10-14 Micron Technology, Inc. Vccp pump for low voltage operation
JPH0935474A (ja) * 1995-07-19 1997-02-07 Fujitsu Ltd 半導体記憶装置
KR0179852B1 (ko) * 1995-10-25 1999-04-15 문정환 차지 펌프 회로
US5793246A (en) 1995-11-08 1998-08-11 Altera Corporation High voltage pump scheme incorporating an overlapping clock
KR0170903B1 (ko) * 1995-12-08 1999-03-30 김주용 하위 워드 라인 구동 회로 및 이를 이용한 반도체 메모리 장치
US5767734A (en) * 1995-12-21 1998-06-16 Altera Corporation High-voltage pump with initiation scheme
KR0172370B1 (ko) * 1995-12-30 1999-03-30 김광호 다단펌핑 머지드 펌핑전압 발생회로
JP3768608B2 (ja) * 1996-01-30 2006-04-19 株式会社日立製作所 半導体装置および半導体記憶装置
US5774405A (en) * 1996-03-28 1998-06-30 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory having an internal circuit using a boosted potential
US6209071B1 (en) * 1996-05-07 2001-03-27 Rambus Inc. Asynchronous request/synchronous data dynamic random access memory
JP3346273B2 (ja) * 1998-04-24 2002-11-18 日本電気株式会社 ブースト回路および半導体記憶装置
US6044026A (en) 1998-06-05 2000-03-28 Micron Technology, Inc. Trap and delay pulse generator for a high speed clock
US6628564B1 (en) * 1998-06-29 2003-09-30 Fujitsu Limited Semiconductor memory device capable of driving non-selected word lines to first and second potentials
KR100557569B1 (ko) * 1998-12-28 2006-05-22 주식회사 하이닉스반도체 차지 펌프 회로
US6320797B1 (en) 1999-02-24 2001-11-20 Micron Technology, Inc. Method and circuit for regulating the output voltage from a charge pump circuit, and memory device using same
US6160723A (en) 1999-03-01 2000-12-12 Micron Technology, Inc. Charge pump circuit including level shifters for threshold voltage cancellation and clock signal boosting, and memory device using same
US6606271B2 (en) * 2001-05-23 2003-08-12 Mircron Technology, Inc. Circuit having a controllable slew rate
US6717459B2 (en) * 2002-02-21 2004-04-06 Micron Technology, Inc. Capacitor charge sharing charge pump
KR100604657B1 (ko) * 2004-05-06 2006-07-25 주식회사 하이닉스반도체 최적화된 내부전압을 공급할 수 있는 전원공급회로를구비하는 반도체 메모리 장치
JP4785411B2 (ja) * 2004-07-16 2011-10-05 セイコーインスツル株式会社 チャージポンプ回路
US10186309B2 (en) * 2016-06-29 2019-01-22 Samsung Electronics Co., Ltd. Methods of operating semiconductor memory devices and semiconductor memory devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333205A (en) * 1964-10-02 1967-07-25 Ibm Timing signal generator with frequency keyed to input
US4670668A (en) * 1985-05-09 1987-06-02 Advanced Micro Devices, Inc. Substrate bias generator with power supply control means to sequence application of bias and power to prevent CMOS SCR latch-up
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6226206B1 (en) 1998-03-12 2001-05-01 Nec Corporation Semiconductor memory device including boost circuit
JP2001297584A (ja) * 2000-04-13 2001-10-26 Nec Corp 半導体記憶装置の昇圧回路
US7471553B2 (en) 2005-09-16 2008-12-30 Samsung Electronics Co., Ltd. Phase change memory device and program method thereof
US7751234B2 (en) 2005-09-16 2010-07-06 Samsung Electronics Co., Ltd. Phase change memory device and program method thereof

Also Published As

Publication number Publication date
US5426333A (en) 1995-06-20
CN1095189A (zh) 1994-11-16
TW310430B (https=) 1997-07-11
CN1034373C (zh) 1997-03-26

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