TW310430B - - Google Patents
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- Publication number
- TW310430B TW310430B TW083103361A TW83103361A TW310430B TW 310430 B TW310430 B TW 310430B TW 083103361 A TW083103361 A TW 083103361A TW 83103361 A TW83103361 A TW 83103361A TW 310430 B TW310430 B TW 310430B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- voltage
- signal
- excitation
- clock signal
- Prior art date
Links
- 230000005284 excitation Effects 0.000 claims description 89
- 230000015654 memory Effects 0.000 claims description 32
- 239000003990 capacitor Substances 0.000 claims description 25
- 230000010363 phase shift Effects 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000000875 corresponding effect Effects 0.000 claims description 4
- 238000003491 array Methods 0.000 claims description 3
- 230000002079 cooperative effect Effects 0.000 claims description 3
- 238000009499 grossing Methods 0.000 claims description 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 125000004093 cyano group Chemical group *C#N 0.000 claims 1
- 230000003111 delayed effect Effects 0.000 claims 1
- 239000000428 dust Substances 0.000 claims 1
- 230000036278 prepulse Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 13
- 230000001360 synchronised effect Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 101100508840 Daucus carota INV3 gene Proteins 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 101500021165 Aplysia californica Myomodulin-A Proteins 0.000 description 1
- 101100532856 Arabidopsis thaliana SDRA gene Proteins 0.000 description 1
- 102100035606 Beta-casein Human genes 0.000 description 1
- 101100081489 Drosophila melanogaster Obp83a gene Proteins 0.000 description 1
- 101000947120 Homo sapiens Beta-casein Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005279 excitation period Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
- H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5121955A JPH06309868A (ja) | 1993-04-26 | 1993-04-26 | 半導体記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW310430B true TW310430B (https=) | 1997-07-11 |
Family
ID=14824052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083103361A TW310430B (https=) | 1993-04-26 | 1994-04-15 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5426333A (https=) |
| JP (1) | JPH06309868A (https=) |
| CN (1) | CN1034373C (https=) |
| TW (1) | TW310430B (https=) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3090833B2 (ja) * | 1993-12-28 | 2000-09-25 | 株式会社東芝 | 半導体記憶装置 |
| JP2679617B2 (ja) * | 1994-04-18 | 1997-11-19 | 日本電気株式会社 | チャージポンプ回路 |
| KR0149224B1 (ko) * | 1994-10-13 | 1998-10-01 | 김광호 | 반도체 집적장치의 내부전압 승압회로 |
| US5677645A (en) * | 1995-05-08 | 1997-10-14 | Micron Technology, Inc. | Vccp pump for low voltage operation |
| JPH0935474A (ja) * | 1995-07-19 | 1997-02-07 | Fujitsu Ltd | 半導体記憶装置 |
| KR0179852B1 (ko) * | 1995-10-25 | 1999-04-15 | 문정환 | 차지 펌프 회로 |
| US5793246A (en) | 1995-11-08 | 1998-08-11 | Altera Corporation | High voltage pump scheme incorporating an overlapping clock |
| KR0170903B1 (ko) * | 1995-12-08 | 1999-03-30 | 김주용 | 하위 워드 라인 구동 회로 및 이를 이용한 반도체 메모리 장치 |
| US5767734A (en) * | 1995-12-21 | 1998-06-16 | Altera Corporation | High-voltage pump with initiation scheme |
| KR0172370B1 (ko) * | 1995-12-30 | 1999-03-30 | 김광호 | 다단펌핑 머지드 펌핑전압 발생회로 |
| JP3768608B2 (ja) * | 1996-01-30 | 2006-04-19 | 株式会社日立製作所 | 半導体装置および半導体記憶装置 |
| US5774405A (en) * | 1996-03-28 | 1998-06-30 | Mitsubishi Denki Kabushiki Kaisha | Dynamic random access memory having an internal circuit using a boosted potential |
| US6209071B1 (en) * | 1996-05-07 | 2001-03-27 | Rambus Inc. | Asynchronous request/synchronous data dynamic random access memory |
| JPH11260053A (ja) | 1998-03-12 | 1999-09-24 | Nec Corp | 半導体記憶装置の昇圧回路 |
| JP3346273B2 (ja) * | 1998-04-24 | 2002-11-18 | 日本電気株式会社 | ブースト回路および半導体記憶装置 |
| US6044026A (en) | 1998-06-05 | 2000-03-28 | Micron Technology, Inc. | Trap and delay pulse generator for a high speed clock |
| US6628564B1 (en) * | 1998-06-29 | 2003-09-30 | Fujitsu Limited | Semiconductor memory device capable of driving non-selected word lines to first and second potentials |
| KR100557569B1 (ko) * | 1998-12-28 | 2006-05-22 | 주식회사 하이닉스반도체 | 차지 펌프 회로 |
| US6320797B1 (en) | 1999-02-24 | 2001-11-20 | Micron Technology, Inc. | Method and circuit for regulating the output voltage from a charge pump circuit, and memory device using same |
| US6160723A (en) | 1999-03-01 | 2000-12-12 | Micron Technology, Inc. | Charge pump circuit including level shifters for threshold voltage cancellation and clock signal boosting, and memory device using same |
| JP2001297584A (ja) * | 2000-04-13 | 2001-10-26 | Nec Corp | 半導体記憶装置の昇圧回路 |
| US6606271B2 (en) * | 2001-05-23 | 2003-08-12 | Mircron Technology, Inc. | Circuit having a controllable slew rate |
| US6717459B2 (en) * | 2002-02-21 | 2004-04-06 | Micron Technology, Inc. | Capacitor charge sharing charge pump |
| KR100604657B1 (ko) * | 2004-05-06 | 2006-07-25 | 주식회사 하이닉스반도체 | 최적화된 내부전압을 공급할 수 있는 전원공급회로를구비하는 반도체 메모리 장치 |
| JP4785411B2 (ja) * | 2004-07-16 | 2011-10-05 | セイコーインスツル株式会社 | チャージポンプ回路 |
| KR100757410B1 (ko) | 2005-09-16 | 2007-09-11 | 삼성전자주식회사 | 상 변화 메모리 장치 및 그것의 프로그램 방법 |
| US10186309B2 (en) * | 2016-06-29 | 2019-01-22 | Samsung Electronics Co., Ltd. | Methods of operating semiconductor memory devices and semiconductor memory devices |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3333205A (en) * | 1964-10-02 | 1967-07-25 | Ibm | Timing signal generator with frequency keyed to input |
| US4670668A (en) * | 1985-05-09 | 1987-06-02 | Advanced Micro Devices, Inc. | Substrate bias generator with power supply control means to sequence application of bias and power to prevent CMOS SCR latch-up |
| US4794278A (en) * | 1987-12-30 | 1988-12-27 | Intel Corporation | Stable substrate bias generator for MOS circuits |
-
1993
- 1993-04-26 JP JP5121955A patent/JPH06309868A/ja active Pending
-
1994
- 1994-04-15 TW TW083103361A patent/TW310430B/zh active
- 1994-04-22 US US08/231,126 patent/US5426333A/en not_active Expired - Fee Related
- 1994-04-25 CN CN94104668A patent/CN1034373C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5426333A (en) | 1995-06-20 |
| CN1095189A (zh) | 1994-11-16 |
| CN1034373C (zh) | 1997-03-26 |
| JPH06309868A (ja) | 1994-11-04 |
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