TW212243B - - Google Patents
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- Publication number
- TW212243B TW212243B TW081108354A TW81108354A TW212243B TW 212243 B TW212243 B TW 212243B TW 081108354 A TW081108354 A TW 081108354A TW 81108354 A TW81108354 A TW 81108354A TW 212243 B TW212243 B TW 212243B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- mode
- signal
- voltage
- address
- Prior art date
Links
- 239000000872 buffer Substances 0.000 claims description 46
- 230000014759 maintenance of location Effects 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 12
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
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- 238000010586 diagram Methods 0.000 description 36
- 230000010355 oscillation Effects 0.000 description 34
- 102100035606 Beta-casein Human genes 0.000 description 22
- 101000947120 Homo sapiens Beta-casein Proteins 0.000 description 22
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- 239000004065 semiconductor Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
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- 238000003780 insertion Methods 0.000 description 2
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- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 2
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- 102100033868 Cannabinoid receptor 1 Human genes 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- 101000587455 Homo sapiens Single-stranded DNA-binding protein, mitochondrial Proteins 0.000 description 1
- 102100029719 Single-stranded DNA-binding protein, mitochondrial Human genes 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
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- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
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- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32703391 | 1991-11-15 | ||
| JP3327032A JPH05144258A (ja) | 1991-11-15 | 1991-11-15 | ダイナミツク型ｒａｍの特殊モード制御方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW212243B true TW212243B (https=) | 1993-09-01 |
Family
ID=26572373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081108354A TW212243B (https=) | 1991-11-15 | 1992-10-20 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5410507A (https=) |
| EP (1) | EP0542454A3 (https=) |
| KR (1) | KR930010987A (https=) |
| TW (1) | TW212243B (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2725824B1 (fr) * | 1994-10-18 | 1997-01-03 | Thomson Csf Semiconducteurs | Memoire insensible aux perturbations |
| JPH08315570A (ja) * | 1995-05-15 | 1996-11-29 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US5657293A (en) * | 1995-08-23 | 1997-08-12 | Micron Technology, Inc. | Integrated circuit memory with back end mode disable |
| US5689467A (en) * | 1995-11-30 | 1997-11-18 | Texas Instruments Incorporated | Apparatus and method for reducing test time of the data retention parameter in a dynamic random access memory |
| JPH09167488A (ja) * | 1995-12-18 | 1997-06-24 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US5640361A (en) * | 1996-05-01 | 1997-06-17 | Hewlett-Packard Company | Memory architecture |
| JP3863313B2 (ja) * | 1999-03-19 | 2006-12-27 | 富士通株式会社 | 半導体記憶装置 |
| US6563746B2 (en) * | 1999-11-09 | 2003-05-13 | Fujitsu Limited | Circuit for entering/exiting semiconductor memory device into/from low power consumption mode and method of controlling internal circuit at low power consumption mode |
| JP2001202773A (ja) * | 2000-01-20 | 2001-07-27 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP2002056671A (ja) * | 2000-08-14 | 2002-02-22 | Hitachi Ltd | ダイナミック型ｒａｍのデータ保持方法と半導体集積回路装置 |
| WO2002032231A1 (en) * | 2000-10-19 | 2002-04-25 | Edens, Luppo | Protein hydrolysates |
| US7085186B2 (en) * | 2001-04-05 | 2006-08-01 | Purple Mountain Server Llc | Method for hiding a refresh in a pseudo-static memory |
| KR100465597B1 (ko) * | 2001-12-07 | 2005-01-13 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 리프레쉬장치 및 그것의 리프레쉬방법 |
| JP2004133800A (ja) * | 2002-10-11 | 2004-04-30 | Renesas Technology Corp | 半導体集積回路装置 |
| JP4478974B2 (ja) * | 2004-01-30 | 2010-06-09 | エルピーダメモリ株式会社 | 半導体記憶装置及びそのリフレッシュ制御方法 |
| US7215188B2 (en) * | 2005-02-25 | 2007-05-08 | Freescale Semiconductor, Inc. | Integrated circuit having a low power mode and method therefor |
| US8547756B2 (en) | 2010-10-04 | 2013-10-01 | Zeno Semiconductor, Inc. | Semiconductor memory device having an electrically floating body transistor |
| KR100870423B1 (ko) * | 2007-06-27 | 2008-11-26 | 주식회사 하이닉스반도체 | 반도체메모리소자 |
| US8130547B2 (en) | 2007-11-29 | 2012-03-06 | Zeno Semiconductor, Inc. | Method of maintaining the state of semiconductor memory having electrically floating body transistor |
| US10340276B2 (en) | 2010-03-02 | 2019-07-02 | Zeno Semiconductor, Inc. | Method of maintaining the state of semiconductor memory having electrically floating body transistor |
| KR102194791B1 (ko) * | 2013-08-09 | 2020-12-28 | 에스케이하이닉스 주식회사 | 메모리, 이를 포함하는 메모리 시스템 및 메모리의 동작방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0632217B2 (ja) * | 1981-06-29 | 1994-04-27 | 富士通株式会社 | 半導体記憶装置 |
| JPH01205788A (ja) * | 1988-02-12 | 1989-08-18 | Toshiba Corp | 半導体集積回路 |
| JPH02246516A (ja) * | 1989-03-20 | 1990-10-02 | Hitachi Ltd | 半導体装置 |
| US5172341A (en) * | 1990-01-19 | 1992-12-15 | Dallas Semiconductor Corporation | Serial dram controller with multi generation interface |
-
1992
- 1992-10-20 TW TW081108354A patent/TW212243B/zh active
- 1992-10-30 EP EP92309958A patent/EP0542454A3/en not_active Withdrawn
- 1992-11-09 KR KR1019920020963A patent/KR930010987A/ko not_active Withdrawn
- 1992-11-16 US US07/977,212 patent/US5410507A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR930010987A (ko) | 1993-06-23 |
| EP0542454A3 (en) | 1996-02-14 |
| EP0542454A2 (en) | 1993-05-19 |
| US5410507A (en) | 1995-04-25 |
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