CN103262218A - 制造碳化硅半导体器件的方法 - Google Patents

制造碳化硅半导体器件的方法 Download PDF

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Publication number
CN103262218A
CN103262218A CN2011800598382A CN201180059838A CN103262218A CN 103262218 A CN103262218 A CN 103262218A CN 2011800598382 A CN2011800598382 A CN 2011800598382A CN 201180059838 A CN201180059838 A CN 201180059838A CN 103262218 A CN103262218 A CN 103262218A
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China
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contact electrode
type
film
region
electrode
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CN2011800598382A
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Chinese (zh)
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山田俊介
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication of CN103262218A publication Critical patent/CN103262218A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants

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  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
CN2011800598382A 2011-01-13 2011-12-01 制造碳化硅半导体器件的方法 Pending CN103262218A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011004576A JP5728954B2 (ja) 2011-01-13 2011-01-13 炭化珪素半導体装置の製造方法
JP2011-004576 2011-01-13
PCT/JP2011/077799 WO2012096070A1 (ja) 2011-01-13 2011-12-01 炭化珪素半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN103262218A true CN103262218A (zh) 2013-08-21

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CN2011800598382A Pending CN103262218A (zh) 2011-01-13 2011-12-01 制造碳化硅半导体器件的方法

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Country Link
US (1) US8415241B2 (cg-RX-API-DMAC10.html)
EP (1) EP2667403A4 (cg-RX-API-DMAC10.html)
JP (1) JP5728954B2 (cg-RX-API-DMAC10.html)
KR (1) KR20130109168A (cg-RX-API-DMAC10.html)
CN (1) CN103262218A (cg-RX-API-DMAC10.html)
TW (1) TW201246283A (cg-RX-API-DMAC10.html)
WO (1) WO2012096070A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024597A (zh) * 2016-05-30 2016-10-12 北京世纪金光半导体有限公司 一种碳化硅欧姆接触形成方法

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JP2014038899A (ja) * 2012-08-13 2014-02-27 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
JP5949305B2 (ja) * 2012-08-13 2016-07-06 住友電気工業株式会社 炭化珪素半導体装置の製造方法
CN104718604B (zh) * 2012-10-23 2017-06-30 富士电机株式会社 半导体装置的制造方法
JP5961563B2 (ja) * 2013-01-25 2016-08-02 株式会社豊田中央研究所 半導体装置の製造方法
JP6075185B2 (ja) * 2013-04-26 2017-02-08 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2015015352A (ja) 2013-07-04 2015-01-22 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2015032614A (ja) 2013-07-31 2015-02-16 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2015032615A (ja) 2013-07-31 2015-02-16 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9214572B2 (en) * 2013-09-20 2015-12-15 Monolith Semiconductor Inc. High voltage MOSFET devices and methods of making the devices
JP6183200B2 (ja) * 2013-12-16 2017-08-23 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP7860371B2 (ja) * 2022-05-19 2026-05-18 ミツミ電機株式会社 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置
CN116759464B (zh) * 2023-08-15 2023-11-28 苏州华太电子技术股份有限公司 一种横向SiC-JFET器件及其制备方法

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WO2009128382A1 (ja) * 2008-04-15 2009-10-22 住友電気工業株式会社 半導体装置およびその製造方法
JP2009272530A (ja) * 2008-05-09 2009-11-19 Sharp Corp 半導体装置とその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024597A (zh) * 2016-05-30 2016-10-12 北京世纪金光半导体有限公司 一种碳化硅欧姆接触形成方法

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EP2667403A4 (en) 2014-06-25
US20120184094A1 (en) 2012-07-19
KR20130109168A (ko) 2013-10-07
EP2667403A1 (en) 2013-11-27
JP2012146838A (ja) 2012-08-02
TW201246283A (en) 2012-11-16
US8415241B2 (en) 2013-04-09
JP5728954B2 (ja) 2015-06-03
WO2012096070A1 (ja) 2012-07-19

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Application publication date: 20130821