JP5286677B2 - P型4H−SiC基板上のオーミック電極の形成方法 - Google Patents
P型4H−SiC基板上のオーミック電極の形成方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
熱処理前の電極(SiC/SiO2/Al/Ti/Al)を熱処理すると、Alが溶融し以下の2界面反応(1)(2)が進行する。
(1) SiO2+Al(liq.)=Al(Si,O)(liq.)
(2) Ti+3Al(liq.)=Al3Ti
こうして、電極はSiC/Al3Ti/Al(liq.)となる。
(3) 2SiC+3Al3Ti=Ti3SiC2+Si+9Al
反応(3)により、SiCに接してTi3SiC2が形成される。Ti3SiC2の成長面はTi3SiC2/Al3Ti界面側であり、従ってTi3SiC2中をSi、Cが拡散してTi3SiC2の成長面に供給されるとともに、反応(3)により生じるAlとSiはAl3Ti中を拡散してAl融液に排出される。Al3Tiはかなりの量のSiを固溶することができるので、AlとSiがAl3Ti中を通ってAl融液に達する拡散経路は安定的に確立することができる。
SiC/Ti3SiC2/(Al,Si)3Ti/Al(Si)(liq.)
の積層構造を有する電極が形成される。
以上より、本発明によって作製された電極は、オーミック特性が得られるものと推定される。
P型4H−SiCウェハ(比抵抗:200〜500Ωcm、直径:50mm)をアセトンにより洗浄して表面を清浄化した。
(2) Ti層 :厚さ80nm(原料純度:99.9%以上)
(3) 第2Al層:厚さ380nm(原料純度:99.99%以上)
真空蒸着機としては電子ビーム蒸着機を用いた。しかし、これに限定する必要はなく、スパッタ蒸着機、抵抗加熱蒸着機など、清浄な雰囲気(真空中、不活性ガス中)にて成膜可能なものであれば用いることができる。また、(1)〜(3)の各層は本実施例のように連続して蒸着することが望ましい。途中で大気開放すると、酸素、窒素、CHなどの混入により良好なオーミック特性の電極を得ることが妨げられる虞がある。
実施例1と同様の手順および条件にてSiCウェハ上に電極を形成した。
実施例1と同様の手順および条件によりP型4H−SiCウェハ上に電極を形成した。ただし、第1Al層の厚さは表1のように種々に変化させた。得られた各サンプルについて実施例1と同様にして電流電圧測定を行なった。これらのサンプルについて、下記の指標を用いてオーミック性の比較を行なった。
指標=(I/V)10/(I/V)1
ここで、(I/V)10:印加電圧10Vにおける電流値I/電圧値Vとの比
(I/V)1 :印加電圧10Vにおける電流値I/電圧値Vとの比
理想的なオーミック特性が得られたときは、指標=1となる。
図4に、本発明のオーミック電極を4H−SiCバイポーラトランジスタのP型層用電極(ベース電極)に適用した構造例を示す。
図5に、本発明のオーミック電極を4H−SiCMOSFETのP型層用電極に適用した構造例を示す。
102 N型4H−SiCウェハ102
104 N型4H−SiCエピタキシャル層(コレクタ層)104
106 N型用コレクタ電極
108 P型4H−SiCエピタキシャル層(ベース層)
110 N型4H−SiCエピタキシャル層(エミッタ層)
112 N型用エミッタ電極
120 第1Al層
122 Ti層
124 第2Al層
126 本発明のオーミック電極を適用したベース電極
200 本発明のオーミック電極を適用した4H−SiCMOSFET
202 N+型4H−SiCウェハ
204 裏面ドレイン電極
206 N型4H−SiCエピタキシャル層
208 P型4H−SiCエピタキシャル層
210 N+4H−SiCエピタキシャル層
212 ゲート絶縁膜
214 ゲート電極
216 層間絶縁膜
218 N型層用ソース電極
220 第1Al層
222 Ti層
224 第2Al層
226 本発明のオーミック電極を適用したP型用電極
Claims (3)
- P型4H−SiC基板上に、厚さ1〜60nmの第1Al層と、Ti層と、第2Al層とを順次堆積する堆積工程、および
非酸化性雰囲気中での熱処理により、上記第1Al層を媒介として上記SiC基板と上記Ti層との合金層を形成する合金化工程
を含むことを特徴とするP型4H−SiC基板上のオーミック電極の形成方法。 - 請求項1において、上記堆積工程の前に、上記SiC基板の表面を弗酸水溶液により洗浄処理する工程を更に含むことを特徴とする方法。
- 請求項1または2により形成されたことを特徴とする、P型4H−SiC基板上のオーミック電極。
Priority Applications (3)
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JP2007063814A JP5286677B2 (ja) | 2007-03-13 | 2007-03-13 | P型4H−SiC基板上のオーミック電極の形成方法 |
PCT/JP2008/055158 WO2008114838A1 (ja) | 2007-03-13 | 2008-03-13 | P型4H-SiC基板上のオーミック電極の形成方法 |
US12/530,901 US8008180B2 (en) | 2007-03-13 | 2008-03-13 | Method of forming an OHMIC contact on a P-type 4H-SIC substrate |
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JP2007063814A JP5286677B2 (ja) | 2007-03-13 | 2007-03-13 | P型4H−SiC基板上のオーミック電極の形成方法 |
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JP2008227174A JP2008227174A (ja) | 2008-09-25 |
JP5286677B2 true JP5286677B2 (ja) | 2013-09-11 |
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US (1) | US8008180B2 (ja) |
JP (1) | JP5286677B2 (ja) |
WO (1) | WO2008114838A1 (ja) |
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US9828597B2 (en) | 2006-11-22 | 2017-11-28 | Toyota Motor Engineering & Manufacturing North America, Inc. | Biofunctional materials |
JP5477286B2 (ja) | 2008-04-15 | 2014-04-23 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP5449786B2 (ja) * | 2009-01-15 | 2014-03-19 | 昭和電工株式会社 | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
JP2010177581A (ja) | 2009-01-30 | 2010-08-12 | Toyota Motor Corp | オーミック電極およびその形成方法 |
JP2010238738A (ja) | 2009-03-30 | 2010-10-21 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
JP4858791B2 (ja) * | 2009-05-22 | 2012-01-18 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP5544778B2 (ja) | 2009-08-05 | 2014-07-09 | トヨタ自動車株式会社 | オーミック電極およびその製造方法 |
JP5581642B2 (ja) * | 2009-10-05 | 2014-09-03 | 住友電気工業株式会社 | 半導体装置の製造方法 |
US8796009B2 (en) | 2010-06-21 | 2014-08-05 | Toyota Motor Engineering & Manufacturing North America, Inc. | Clearcoat containing thermolysin-like protease from Bacillus stearothermophilus for cleaning of insect body stains |
US11015149B2 (en) | 2010-06-21 | 2021-05-25 | Toyota Motor Corporation | Methods of facilitating removal of a fingerprint |
US9121016B2 (en) | 2011-09-09 | 2015-09-01 | Toyota Motor Engineering & Manufacturing North America, Inc. | Coatings containing polymer modified enzyme for stable self-cleaning of organic stains |
JP5728954B2 (ja) * | 2011-01-13 | 2015-06-03 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP5704003B2 (ja) * | 2011-07-15 | 2015-04-22 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP6042658B2 (ja) * | 2011-09-07 | 2016-12-14 | トヨタ自動車株式会社 | SiC半導体素子の製造方法 |
JP6065303B2 (ja) * | 2012-06-15 | 2017-01-25 | ローム株式会社 | スイッチングデバイス |
CN102931054B (zh) * | 2012-08-21 | 2014-12-17 | 中国科学院微电子研究所 | 一种实现P型SiC材料低温欧姆合金退火的方法 |
JP6069059B2 (ja) * | 2013-03-22 | 2017-01-25 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
CN106981509A (zh) * | 2017-04-06 | 2017-07-25 | 北京世纪金光半导体有限公司 | 一种碳化硅功率器件的多层金属电极结构 |
CN115376899A (zh) * | 2022-04-22 | 2022-11-22 | 重庆平创半导体研究院有限责任公司 | 通过晶背优化降低导通电阻的方法 |
CN117558750B (zh) * | 2023-09-27 | 2024-06-25 | 浙江大学 | 一种p型4H-SiC的SiC/Al/Ti欧姆接触电极、其制备方法及包含该电极的半导体器件 |
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JPS6271271A (ja) * | 1985-09-24 | 1987-04-01 | Sharp Corp | 炭化珪素半導体の電極構造 |
JP2509713B2 (ja) * | 1989-10-18 | 1996-06-26 | シャープ株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2940699B2 (ja) * | 1990-07-30 | 1999-08-25 | 三洋電機株式会社 | p型SiCの電極形成方法 |
JP2000101064A (ja) | 1998-09-25 | 2000-04-07 | Sanyo Electric Co Ltd | 電極、SiCの電極及びSiCデバイス |
JP4036075B2 (ja) * | 2002-10-29 | 2008-01-23 | 豊田合成株式会社 | p型SiC用電極の製造方法 |
US6747291B1 (en) * | 2003-01-10 | 2004-06-08 | The United States Of America As Represented By The Secretary Of The Air Force | Ohmic contacts on p-type silicon carbide using carbon films |
JP4501488B2 (ja) | 2004-03-26 | 2010-07-14 | 豊田合成株式会社 | 炭化珪素半導体のオーミック電極及びその製造方法 |
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