CN103255381B - 溅射靶及通过旋转轴向锻造形成该溅射靶的方法 - Google Patents
溅射靶及通过旋转轴向锻造形成该溅射靶的方法 Download PDFInfo
- Publication number
- CN103255381B CN103255381B CN201310169232.5A CN201310169232A CN103255381B CN 103255381 B CN103255381 B CN 103255381B CN 201310169232 A CN201310169232 A CN 201310169232A CN 103255381 B CN103255381 B CN 103255381B
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- Prior art keywords
- metallic plate
- sputtering target
- target
- gradient
- whole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 114
- 238000005242 forging Methods 0.000 title abstract description 84
- 238000000034 method Methods 0.000 title abstract description 71
- 239000013078 crystal Substances 0.000 claims abstract description 33
- 229910052715 tantalum Inorganic materials 0.000 claims description 27
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 230000008859 change Effects 0.000 claims description 22
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical group [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 230000000930 thermomechanical effect Effects 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005266 casting Methods 0.000 description 56
- 239000000463 material Substances 0.000 description 17
- 238000012545 processing Methods 0.000 description 13
- 235000013339 cereals Nutrition 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000000137 annealing Methods 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000005096 rolling process Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 241000209094 Oryza Species 0.000 description 4
- 235000007164 Oryza sativa Nutrition 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005555 metalworking Methods 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 235000009566 rice Nutrition 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000001887 electron backscatter diffraction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 241001504664 Crossocheilus latius Species 0.000 description 1
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C14/00—Alloys based on titanium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C16/00—Alloys based on zirconium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Forging (AREA)
- Heat Treatment Of Articles (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56859204P | 2004-05-06 | 2004-05-06 | |
| US60/568,592 | 2004-05-06 | ||
| CN2005800229541A CN1981067B (zh) | 2004-05-06 | 2005-05-06 | 溅射靶及通过旋转轴向锻造形成该溅射靶的方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800229541A Division CN1981067B (zh) | 2004-05-06 | 2005-05-06 | 溅射靶及通过旋转轴向锻造形成该溅射靶的方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103255381A CN103255381A (zh) | 2013-08-21 |
| CN103255381B true CN103255381B (zh) | 2016-08-10 |
Family
ID=34971580
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310169232.5A Expired - Fee Related CN103255381B (zh) | 2004-05-06 | 2005-05-06 | 溅射靶及通过旋转轴向锻造形成该溅射靶的方法 |
| CN2005800229541A Expired - Fee Related CN1981067B (zh) | 2004-05-06 | 2005-05-06 | 溅射靶及通过旋转轴向锻造形成该溅射靶的方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800229541A Expired - Fee Related CN1981067B (zh) | 2004-05-06 | 2005-05-06 | 溅射靶及通过旋转轴向锻造形成该溅射靶的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8252126B2 (enExample) |
| EP (1) | EP1751324B1 (enExample) |
| JP (3) | JP2007536431A (enExample) |
| KR (2) | KR101368057B1 (enExample) |
| CN (2) | CN103255381B (enExample) |
| TW (1) | TWI484054B (enExample) |
| WO (1) | WO2005108639A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111886179A (zh) * | 2018-03-29 | 2020-11-03 | 本田技研工业株式会社 | 跨骑型电动车辆 |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4970034B2 (ja) * | 2003-08-11 | 2012-07-04 | ハネウェル・インターナショナル・インコーポレーテッド | ターゲット／バッキングプレート構造物、及びターゲット／バッキングプレート構造物の形成法 |
| EP1876258A4 (en) * | 2005-04-28 | 2008-08-13 | Nippon Mining Co | sputtering Target |
| US7837929B2 (en) | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
| US8250895B2 (en) * | 2007-08-06 | 2012-08-28 | H.C. Starck Inc. | Methods and apparatus for controlling texture of plates and sheets by tilt rolling |
| KR101201577B1 (ko) | 2007-08-06 | 2012-11-14 | 에이치. 씨. 스타아크 아이앤씨 | 향상된 조직 균일성을 가진 내화 금속판 |
| KR101626286B1 (ko) * | 2008-11-03 | 2016-06-01 | 토소우 에스엠디, 인크 | 스퍼터 타겟 제조 방법 및 이에 의해 제조된 스퍼터 타겟 |
| CN102091733B (zh) * | 2009-12-09 | 2013-02-13 | 宁波江丰电子材料有限公司 | 高纯度铜靶材的制作方法 |
| JP5718896B2 (ja) * | 2010-03-11 | 2015-05-13 | 株式会社東芝 | スパッタリングターゲットとその製造方法、および半導体素子の製造方法 |
| US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
| US8449818B2 (en) | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
| US8968537B2 (en) * | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
| KR20170016024A (ko) | 2011-05-10 | 2017-02-10 | 에이치. 씨. 스타아크 아이앤씨 | 멀티-블록 스퍼터링 타겟 및 이에 관한 제조방법 및 물품 |
| CN103827348B (zh) * | 2011-11-30 | 2015-11-25 | 吉坤日矿日石金属株式会社 | 钽溅射靶及其制造方法 |
| CN102513789B (zh) * | 2011-12-21 | 2014-04-09 | 宁波江丰电子材料有限公司 | 钨靶材的制作方法 |
| US9890452B2 (en) * | 2012-03-21 | 2018-02-13 | Jx Nippon Mining & Metals Corporation | Tantalum sputtering target, method for manufacturing same, and barrier film for semiconductor wiring formed by using target |
| US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
| CN103028898A (zh) | 2012-08-16 | 2013-04-10 | 宁夏东方钽业股份有限公司 | 一种高性能钽靶材的制备方法 |
| CN103692151B (zh) * | 2012-09-28 | 2016-02-24 | 宁波江丰电子材料股份有限公司 | 钛聚焦环的制造方法 |
| CN102989856B (zh) * | 2012-12-03 | 2014-12-10 | 西安超晶新能源材料有限公司 | 一种大型变壁厚纯钼坩埚的成型方法 |
| US9994951B2 (en) * | 2013-03-15 | 2018-06-12 | The United States Of America, As Represented By The Secretary Of The Navy | Photovoltaic sputtering targets fabricated from reclaimed materials |
| SG11201503724RA (en) | 2013-03-22 | 2015-06-29 | Jx Nippon Mining & Metals Corp | Tungsten sintered compact sputtering target and method for producing same |
| AT14157U1 (de) * | 2013-12-20 | 2015-05-15 | Plansee Se | W-Ni-Sputtertarget |
| CN103738099B (zh) * | 2013-12-26 | 2016-04-06 | 乌鲁木齐哈玛铜制工艺品有限公司 | 一种铜质工艺品的制作方法 |
| WO2015146516A1 (ja) * | 2014-03-27 | 2015-10-01 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
| CN103898459B (zh) * | 2014-04-16 | 2016-05-04 | 昆山海普电子材料有限公司 | 一种高纯钴靶材的制备方法 |
| CA2952404C (en) * | 2014-06-16 | 2019-09-24 | Shinohara Press Service Co., Ltd. | Method of manufacturing pure niobium plate end-group components for superconducting high-frequency accelerator cavity |
| KR20170134365A (ko) | 2015-04-10 | 2017-12-06 | 토소우 에스엠디, 인크 | 탄탈 스퍼터 타겟의 제조 방법 및 그에 의해 제조된 스퍼터 타겟 |
| EP3211118B1 (en) * | 2015-05-22 | 2020-09-09 | JX Nippon Mining & Metals Corporation | Tantalum sputtering target, and production method therefor |
| JP6293928B2 (ja) | 2015-05-22 | 2018-03-14 | Ｊｘ金属株式会社 | タンタルスパッタリングターゲット及びその製造方法 |
| US11359273B2 (en) | 2015-08-03 | 2022-06-14 | Honeywell International Inc. | Frictionless forged aluminum alloy sputtering target with improved properties |
| KR20190015346A (ko) | 2016-06-02 | 2019-02-13 | 다나카 기킨조쿠 고교 가부시키가이샤 | 금 스퍼터링 타깃 |
| US10900102B2 (en) | 2016-09-30 | 2021-01-26 | Honeywell International Inc. | High strength aluminum alloy backing plate and methods of making |
| CN106893990B (zh) * | 2017-02-17 | 2019-02-01 | 南京东锐铂业有限公司 | 银溅射靶材组件的生产工艺 |
| JP6553813B2 (ja) | 2017-03-30 | 2019-07-31 | Ｊｘ金属株式会社 | タンタルスパッタリングターゲット |
| US10760156B2 (en) | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
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- 2005-05-06 KR KR1020127023065A patent/KR101368057B1/ko not_active Expired - Fee Related
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Also Published As
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| KR101368057B1 (ko) | 2014-02-26 |
| KR20070011568A (ko) | 2007-01-24 |
| US8252126B2 (en) | 2012-08-28 |
| TW200607873A (en) | 2006-03-01 |
| JP2007536431A (ja) | 2007-12-13 |
| JP2013151751A (ja) | 2013-08-08 |
| US8500928B2 (en) | 2013-08-06 |
| EP1751324A1 (en) | 2007-02-14 |
| KR101196528B1 (ko) | 2012-11-01 |
| WO2005108639A1 (en) | 2005-11-17 |
| JP2012180599A (ja) | 2012-09-20 |
| US20050247386A1 (en) | 2005-11-10 |
| TWI484054B (zh) | 2015-05-11 |
| US20120297855A1 (en) | 2012-11-29 |
| CN1981067B (zh) | 2013-05-08 |
| KR20120107019A (ko) | 2012-09-27 |
| JP6023605B2 (ja) | 2016-11-09 |
| CN103255381A (zh) | 2013-08-21 |
| CN1981067A (zh) | 2007-06-13 |
| EP1751324B1 (en) | 2015-09-23 |
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