CN103189987B - 混合型有源-场间隙延伸漏极mos晶体管 - Google Patents

混合型有源-场间隙延伸漏极mos晶体管 Download PDF

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Publication number
CN103189987B
CN103189987B CN201180051651.8A CN201180051651A CN103189987B CN 103189987 B CN103189987 B CN 103189987B CN 201180051651 A CN201180051651 A CN 201180051651A CN 103189987 B CN103189987 B CN 103189987B
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drain
region
oxide element
drift region
field oxide
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Chinese (zh)
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CN103189987A (zh
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S·P·彭哈卡
J·林
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/158—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P58/00—Singulating wafers or substrates into multiple chips, i.e. dicing

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201180051651.8A 2010-10-26 2011-10-26 混合型有源-场间隙延伸漏极mos晶体管 Active CN103189987B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610377205.0A CN106057797B (zh) 2010-10-26 2011-10-26 混合型有源-场间隙延伸漏极mos晶体管

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40664010P 2010-10-26 2010-10-26
US61/406,640 2010-10-26
US13/281,260 US8754469B2 (en) 2010-10-26 2011-10-25 Hybrid active-field gap extended drain MOS transistor
US13/281,260 2011-10-25
PCT/US2011/057843 WO2012058281A2 (en) 2010-10-26 2011-10-26 Hybrid active-field gap extended drain mos transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201610377205.0A Division CN106057797B (zh) 2010-10-26 2011-10-26 混合型有源-场间隙延伸漏极mos晶体管

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CN103189987A CN103189987A (zh) 2013-07-03
CN103189987B true CN103189987B (zh) 2016-07-06

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CN201610377205.0A Active CN106057797B (zh) 2010-10-26 2011-10-26 混合型有源-场间隙延伸漏极mos晶体管

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US (4) US8754469B2 (enExample)
JP (2) JP5936616B2 (enExample)
CN (2) CN103189987B (enExample)
WO (1) WO2012058281A2 (enExample)

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JP5586546B2 (ja) * 2011-03-23 2014-09-10 株式会社東芝 半導体装置
JP5973824B2 (ja) * 2012-07-25 2016-08-23 旭化成エレクトロニクス株式会社 電界効果トランジスタ及び半導体装置
JP2014154595A (ja) * 2013-02-05 2014-08-25 Seiko Instruments Inc 半導体装置
US9224861B2 (en) * 2013-05-09 2015-12-29 Freescale Semiconductor, Inc. Semiconductor device with notched gate
US9306059B2 (en) * 2014-03-20 2016-04-05 Kinetic Technologies Power semiconductor transistor with improved gate charge
JP6284421B2 (ja) * 2014-05-09 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
CN106463532B (zh) * 2014-06-18 2020-12-15 英特尔公司 用于高电压场效应晶体管的扩展漏极结构
US10217821B2 (en) * 2014-09-01 2019-02-26 Sk Hynix System Ic Inc. Power integrated devices, electronic devices and electronic systems including the same
KR102228655B1 (ko) * 2014-11-07 2021-03-18 에스케이하이닉스 주식회사 고전압 집적소자 및 그 제조방법
KR102122365B1 (ko) * 2014-12-12 2020-06-12 삼성전자주식회사 반도체 소자
JP6345126B2 (ja) * 2015-01-21 2018-06-20 三菱電機株式会社 ショットキーバリアダイオード
TWI557919B (zh) * 2015-03-09 2016-11-11 世界先進積體電路股份有限公司 半導體裝置及其製造方法
US9818861B2 (en) 2015-04-24 2017-11-14 Vanguard International Semiconductor Corporation Semiconductor device and method for forming the same
CN105742365A (zh) * 2016-04-14 2016-07-06 东莞电子科技大学电子信息工程研究院 射频ldmos晶体管及其制作方法
EP3428971B1 (en) * 2017-07-12 2020-09-09 Nxp B.V. A semiconductor switch device and method
CN107845675B (zh) * 2017-10-30 2020-02-18 济南大学 一种横向双扩散金属氧化物半导体场效应管
US11145743B2 (en) 2019-04-29 2021-10-12 International Business Machines Corporation Transistor device having a comb-shaped channel region to increase the effective gate width
JP7175864B2 (ja) 2019-09-17 2022-11-21 株式会社東芝 半導体装置
CN113707715A (zh) * 2020-05-21 2021-11-26 无锡华润上华科技有限公司 半导体器件
US11581215B2 (en) * 2020-07-14 2023-02-14 Newport Fab, Llc Body-source-tied semiconductor-on-insulator (SOI) transistor
US10978559B1 (en) 2020-08-03 2021-04-13 Texas Instruments Incorporated MOS transistor with folded channel and folded drift region
US11658214B2 (en) 2021-01-12 2023-05-23 Semiconductor Components Industries, Llc MOSFET device with undulating channel
US11610978B2 (en) 2021-03-11 2023-03-21 Nxp B.V. LDMOS with an improved breakdown performance
US11791392B2 (en) * 2021-06-08 2023-10-17 Globalfoundries Singapore Pte. Ltd. Extended-drain metal-oxide-semiconductor devices with a notched gate electrode
US12336220B2 (en) * 2022-02-24 2025-06-17 Globalfoundries Singapore Pte. Ltd. Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells
US12557332B2 (en) 2022-04-28 2026-02-17 Texas Instruments Incorporated Three-dimensional transistor device having conformal layer
US12550410B2 (en) 2022-09-13 2026-02-10 Globalfoundries U.S. Inc. High electron mobility transistors
WO2024203661A1 (ja) * 2023-03-30 2024-10-03 ローム株式会社 半導体装置
WO2025109809A1 (ja) * 2023-11-24 2025-05-30 株式会社村田製作所 半導体装置
CN120417472B (zh) * 2025-07-04 2025-09-09 浙江创芯集成电路有限公司 半导体结构及其形成方法、半导体器件和电子设备

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Publication number Publication date
US11482613B2 (en) 2022-10-25
US10205001B2 (en) 2019-02-12
US9608088B2 (en) 2017-03-28
WO2012058281A3 (en) 2012-07-12
JP6106310B2 (ja) 2017-03-29
CN106057797A (zh) 2016-10-26
JP2013545304A (ja) 2013-12-19
CN103189987A (zh) 2013-07-03
US20140256108A1 (en) 2014-09-11
US8754469B2 (en) 2014-06-17
US20190172930A1 (en) 2019-06-06
WO2012058281A2 (en) 2012-05-03
US20120098062A1 (en) 2012-04-26
US20160343852A1 (en) 2016-11-24
JP5936616B2 (ja) 2016-06-22
JP2016178323A (ja) 2016-10-06
CN106057797B (zh) 2019-09-27

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