CN103077961B - 非晶氧化物半导体和使用其的薄膜晶体管 - Google Patents
非晶氧化物半导体和使用其的薄膜晶体管 Download PDFInfo
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- CN103077961B CN103077961B CN201310008995.1A CN201310008995A CN103077961B CN 103077961 B CN103077961 B CN 103077961B CN 201310008995 A CN201310008995 A CN 201310008995A CN 103077961 B CN103077961 B CN 103077961B
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- Prior art keywords
- oxide semiconductor
- amorphous oxide
- film
- channel layer
- thin film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 239000010409 thin film Substances 0.000 title claims description 68
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 62
- 239000001257 hydrogen Substances 0.000 claims abstract description 61
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 58
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000001301 oxygen Substances 0.000 claims abstract description 55
- 229910052738 indium Inorganic materials 0.000 claims abstract description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 11
- 125000004429 atom Chemical group 0.000 claims abstract description 7
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 89
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 31
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 27
- 238000004544 sputter deposition Methods 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 12
- 239000004973 liquid crystal related substance Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 125000004431 deuterium atom Chemical group 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 5
- 238000004070 electrodeposition Methods 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 50
- 150000002431 hydrogen Chemical class 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 131
- 238000005401 electroluminescence Methods 0.000 description 17
- 239000012298 atmosphere Substances 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 13
- 239000011701 zinc Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000329 molecular dynamics simulation Methods 0.000 description 6
- 125000004430 oxygen atom Chemical group O* 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 230000005355 Hall effect Effects 0.000 description 3
- 206010021143 Hypoxia Diseases 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- CMBZEFASPGWDEN-UHFFFAOYSA-N argon;hydrate Chemical compound O.[Ar] CMBZEFASPGWDEN-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6746—Amorphous silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-219888 | 2008-08-28 | ||
| JP2008219888 | 2008-08-28 | ||
| CN200910167482.9A CN101661952B (zh) | 2008-08-28 | 2009-08-25 | 非晶氧化物半导体和使用其的薄膜晶体管 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910167482.9A Division CN101661952B (zh) | 2008-08-28 | 2009-08-25 | 非晶氧化物半导体和使用其的薄膜晶体管 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103077961A CN103077961A (zh) | 2013-05-01 |
| CN103077961B true CN103077961B (zh) | 2016-04-13 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310008995.1A Active CN103077961B (zh) | 2008-08-28 | 2009-08-25 | 非晶氧化物半导体和使用其的薄膜晶体管 |
| CN200910167482.9A Expired - Fee Related CN101661952B (zh) | 2008-08-28 | 2009-08-25 | 非晶氧化物半导体和使用其的薄膜晶体管 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910167482.9A Expired - Fee Related CN101661952B (zh) | 2008-08-28 | 2009-08-25 | 非晶氧化物半导体和使用其的薄膜晶体管 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US8129718B2 (https=) |
| EP (1) | EP2159844B1 (https=) |
| JP (1) | JP5725698B2 (https=) |
| KR (1) | KR101194255B1 (https=) |
| CN (2) | CN103077961B (https=) |
| AT (1) | ATE534146T1 (https=) |
Families Citing this family (101)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7998372B2 (en) * | 2005-11-18 | 2011-08-16 | Idemitsu Kosan Co., Ltd. | Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel |
| JP5305630B2 (ja) | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
| JP5213422B2 (ja) * | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
| US8945981B2 (en) | 2008-07-31 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI770659B (zh) | 2008-07-31 | 2022-07-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| US8129718B2 (en) * | 2008-08-28 | 2012-03-06 | Canon Kabushiki Kaisha | Amorphous oxide semiconductor and thin film transistor using the same |
| JP5616012B2 (ja) * | 2008-10-24 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN103456794B (zh) | 2008-12-19 | 2016-08-10 | 株式会社半导体能源研究所 | 晶体管的制造方法 |
| KR101064402B1 (ko) * | 2009-01-12 | 2011-09-14 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 평판 표시 장치 |
| KR102068632B1 (ko) | 2009-03-12 | 2020-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| EP2256814B1 (en) | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
| KR102011616B1 (ko) | 2009-06-30 | 2019-08-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
| KR101810699B1 (ko) | 2009-06-30 | 2018-01-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
| WO2011001881A1 (en) * | 2009-06-30 | 2011-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| EP2449594B1 (en) | 2009-06-30 | 2019-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5663214B2 (ja) * | 2009-07-03 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101422362B1 (ko) * | 2009-07-10 | 2014-07-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 표시 패널 및 전자 기기 |
| WO2011004723A1 (en) | 2009-07-10 | 2011-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method the same |
| KR20210131462A (ko) * | 2009-07-10 | 2021-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 제작 방법 |
| KR101981441B1 (ko) | 2009-07-31 | 2019-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011013523A1 (en) | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR102057299B1 (ko) | 2009-07-31 | 2019-12-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
| CN102473734B (zh) | 2009-07-31 | 2015-08-12 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| WO2011013502A1 (en) | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011027701A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| KR20220127372A (ko) | 2009-09-24 | 2022-09-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| KR101809759B1 (ko) * | 2009-09-24 | 2018-01-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 소자 및 그 제조 방법 |
| WO2011046025A1 (en) * | 2009-10-16 | 2011-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit and semiconductor device |
| TWI415794B (zh) * | 2009-10-23 | 2013-11-21 | 國立清華大學 | 合成銦鎵鋅氧化物之方法及使用其形成銦鎵鋅氧化物薄膜之方法 |
| SG188112A1 (en) * | 2009-10-30 | 2013-03-28 | Semiconductor Energy Lab | Logic circuit and semiconductor device |
| KR101800852B1 (ko) * | 2009-11-20 | 2017-12-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN103151266B (zh) | 2009-11-20 | 2016-08-03 | 株式会社半导体能源研究所 | 用于制造半导体器件的方法 |
| WO2011068025A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Dc converter circuit and power supply circuit |
| KR101835300B1 (ko) | 2009-12-08 | 2018-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR101511076B1 (ko) * | 2009-12-08 | 2015-04-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011074409A1 (en) * | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8759917B2 (en) * | 2010-01-04 | 2014-06-24 | Samsung Electronics Co., Ltd. | Thin-film transistor having etch stop multi-layer and method of manufacturing the same |
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| WO2011132418A1 (ja) * | 2010-04-22 | 2011-10-27 | 出光興産株式会社 | 成膜方法 |
| CN106057907B (zh) | 2010-04-23 | 2019-10-22 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| WO2011132625A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| WO2011135987A1 (en) * | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN102870245B (zh) * | 2010-05-07 | 2015-07-29 | 独立行政法人科学技术振兴机构 | 功能设备的制造方法、场效应晶体管和薄膜晶体管 |
| US8906756B2 (en) | 2010-05-21 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2011249674A (ja) * | 2010-05-28 | 2011-12-08 | Fujifilm Corp | 薄膜トランジスタおよびその製造方法 |
| WO2011162177A1 (ja) * | 2010-06-21 | 2011-12-29 | 株式会社アルバック | 半導体装置、半導体装置を有する液晶表示装置、半導体装置の製造方法 |
| WO2012002292A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8785241B2 (en) | 2010-07-16 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2012033836A (ja) | 2010-08-03 | 2012-02-16 | Canon Inc | トップゲート型薄膜トランジスタ及びこれを備えた表示装置 |
| JP2012064201A (ja) * | 2010-08-19 | 2012-03-29 | Semiconductor Energy Lab Co Ltd | 入出力装置及び入出力装置の駆動方法 |
| JP2012049208A (ja) * | 2010-08-25 | 2012-03-08 | Fujifilm Corp | 酸化物半導体薄膜、薄膜トランジスタおよび薄膜トランジスタを備えた装置 |
| JP5679417B2 (ja) * | 2010-08-25 | 2015-03-04 | 富士フイルム株式会社 | 酸化物半導体薄膜の製造方法および該製造方法により作製された酸化物半導体薄膜、薄膜トランジスタ、並びに薄膜トランジスタを備えた装置 |
| JP5780902B2 (ja) * | 2010-10-12 | 2015-09-16 | 出光興産株式会社 | 半導体薄膜、薄膜トランジスタ及びその製造方法 |
| EP2447999A1 (en) * | 2010-10-29 | 2012-05-02 | Applied Materials, Inc. | Method for depositing a thin film electrode and thin film stack |
| US8569754B2 (en) | 2010-11-05 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5189674B2 (ja) * | 2010-12-28 | 2013-04-24 | 出光興産株式会社 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
| JP5186611B2 (ja) * | 2010-12-28 | 2013-04-17 | 出光興産株式会社 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
| TWI521612B (zh) | 2011-03-11 | 2016-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| TWI624878B (zh) * | 2011-03-11 | 2018-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| TWI545652B (zh) | 2011-03-25 | 2016-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9219159B2 (en) | 2011-03-25 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming oxide semiconductor film and method for manufacturing semiconductor device |
| US9012904B2 (en) * | 2011-03-25 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8541266B2 (en) | 2011-04-01 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US9478668B2 (en) | 2011-04-13 | 2016-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
| US8709922B2 (en) * | 2011-05-06 | 2014-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9117920B2 (en) * | 2011-05-19 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device using oxide semiconductor |
| JP5965107B2 (ja) * | 2011-06-13 | 2016-08-03 | 出光興産株式会社 | 薄膜トランジスタ |
| US8901554B2 (en) | 2011-06-17 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including channel formation region including oxide semiconductor |
| KR101259000B1 (ko) * | 2011-07-08 | 2013-04-29 | 단국대학교 산학협력단 | 박막의 물성을 변화시키는 방법 |
| US9660092B2 (en) | 2011-08-31 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor including oxygen release layer |
| US9082861B2 (en) * | 2011-11-11 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Transistor with oxide semiconductor channel having protective layer |
| JP6122275B2 (ja) | 2011-11-11 | 2017-04-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP6076038B2 (ja) | 2011-11-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| KR102932705B1 (ko) | 2012-04-13 | 2026-02-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20140071491A (ko) * | 2012-06-14 | 2014-06-11 | 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 | 박막 트랜지스터, 박막 트랜지스터의 제조방법 및 반도체 장치 |
| US8653516B1 (en) * | 2012-08-31 | 2014-02-18 | Eastman Kodak Company | High performance thin film transistor |
| KR101991338B1 (ko) * | 2012-09-24 | 2019-06-20 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이 기판 및 그 제조방법 |
| TWI613813B (zh) | 2012-11-16 | 2018-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| JPWO2014103323A1 (ja) * | 2012-12-28 | 2017-01-12 | 出光興産株式会社 | 薄膜電界効果型トランジスタ |
| TWI593025B (zh) | 2013-01-30 | 2017-07-21 | 半導體能源研究所股份有限公司 | 氧化物半導體層的處理方法 |
| US9373711B2 (en) | 2013-02-27 | 2016-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN104022044B (zh) * | 2013-03-01 | 2017-05-10 | 北京京东方光电科技有限公司 | 氧化物薄膜晶体管及其制备方法、阵列基板和显示装置 |
| KR102290247B1 (ko) * | 2013-03-14 | 2021-08-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법 |
| US9153650B2 (en) | 2013-03-19 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor |
| US9882058B2 (en) * | 2013-05-03 | 2018-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9356156B2 (en) * | 2013-05-24 | 2016-05-31 | Cbrite Inc. | Stable high mobility MOTFT and fabrication at low temperature |
| TWI652822B (zh) * | 2013-06-19 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | 氧化物半導體膜及其形成方法 |
| TWI608523B (zh) * | 2013-07-19 | 2017-12-11 | 半導體能源研究所股份有限公司 | Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device |
| KR102317297B1 (ko) | 2014-02-19 | 2021-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물, 반도체 장치, 모듈, 및 전자 장치 |
| JP2015158572A (ja) * | 2014-02-24 | 2015-09-03 | 株式会社Ｊｏｌｅｄ | 表示装置、電子機器 |
| KR20150136726A (ko) * | 2014-05-27 | 2015-12-08 | 한양대학교 산학협력단 | 산화물 반도체 박막 트랜지스터의 제조방법 |
| US20160163869A1 (en) * | 2014-12-08 | 2016-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Transistor |
| JP2016134489A (ja) * | 2015-01-19 | 2016-07-25 | 三菱電機株式会社 | 酸化物半導体薄膜およびそれを用いた薄膜トランジスタ素子、表示素子 |
| CN105514286B (zh) * | 2016-01-08 | 2019-01-04 | 中国计量学院 | 一种基于氟化锂缓冲层的光敏有机场效应管薄膜封装技术 |
| WO2017150115A1 (ja) * | 2016-02-29 | 2017-09-08 | 住友金属鉱山株式会社 | 酸化物半導体薄膜、酸化物半導体薄膜の製造方法及びそれを用いた薄膜トランジスタ |
| CN106206745B (zh) * | 2016-08-31 | 2019-12-31 | 深圳市华星光电技术有限公司 | 一种高迁移率金属氧化物tft的制作方法 |
| WO2018087787A1 (en) * | 2016-11-14 | 2018-05-17 | Alma Mater Studiorum - Universita' Di Bologna | Sensitive field effect device and manufacturing method thereof |
| US11211461B2 (en) * | 2018-12-28 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| CN111628017A (zh) * | 2020-06-16 | 2020-09-04 | 深圳先进技术研究院 | 掺杂氢的铟镓锌氧化物膜层、其制备方法及其应用、晶体管及其制备方法 |
| US11984508B2 (en) * | 2021-02-24 | 2024-05-14 | Taiwan Semiconductor Manufacturing Company Limited | Thin film transistor including a compositionally-modulated active region and methods for forming the same |
| CN114141708B (zh) * | 2021-11-19 | 2026-03-13 | 惠州华星光电显示有限公司 | 晶体管及其制作方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661952B (zh) * | 2008-08-28 | 2013-02-06 | 佳能株式会社 | 非晶氧化物半导体和使用其的薄膜晶体管 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3352118B2 (ja) | 1992-08-25 | 2002-12-03 | キヤノン株式会社 | 半導体装置及びその製造方法 |
| US6058945A (en) | 1996-05-28 | 2000-05-09 | Canon Kabushiki Kaisha | Cleaning methods of porous surface and semiconductor surface |
| JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| JP3445187B2 (ja) | 1999-08-03 | 2003-09-08 | キヤノン株式会社 | 半導体素子の欠陥補償方法 |
| JP2002206168A (ja) | 2000-10-24 | 2002-07-26 | Canon Inc | シリコン系薄膜の形成方法、シリコン系半導体層の形成方法及び光起電力素子 |
| US6858308B2 (en) | 2001-03-12 | 2005-02-22 | Canon Kabushiki Kaisha | Semiconductor element, and method of forming silicon-based film |
| JP2003007629A (ja) | 2001-04-03 | 2003-01-10 | Canon Inc | シリコン系膜の形成方法、シリコン系膜および半導体素子 |
| JP2004289034A (ja) | 2003-03-25 | 2004-10-14 | Canon Inc | 酸化亜鉛膜の処理方法、それを用いた光起電力素子の製造方法 |
| CN1806322A (zh) * | 2003-06-20 | 2006-07-19 | 夏普株式会社 | 半导体装置及其制造方法以及电子设备 |
| KR20070116888A (ko) | 2004-03-12 | 2007-12-11 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 아몰퍼스 산화물 및 박막 트랜지스터 |
| JP5126730B2 (ja) * | 2004-11-10 | 2013-01-23 | キヤノン株式会社 | 電界効果型トランジスタの製造方法 |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| JP4767616B2 (ja) * | 2005-07-29 | 2011-09-07 | 富士フイルム株式会社 | 半導体デバイスの製造方法及び半導体デバイス |
| JP4560502B2 (ja) | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
| JP4981282B2 (ja) | 2005-09-06 | 2012-07-18 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
| JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| JP5099740B2 (ja) | 2005-12-19 | 2012-12-19 | 財団法人高知県産業振興センター | 薄膜トランジスタ |
| JP5110803B2 (ja) * | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
| US20070215945A1 (en) | 2006-03-20 | 2007-09-20 | Canon Kabushiki Kaisha | Light control device and display |
| US20080023703A1 (en) | 2006-07-31 | 2008-01-31 | Randy Hoffman | System and method for manufacturing a thin-film device |
| JP5127183B2 (ja) | 2006-08-23 | 2013-01-23 | キヤノン株式会社 | アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法 |
| JP4332545B2 (ja) * | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
| JP5105842B2 (ja) | 2006-12-05 | 2012-12-26 | キヤノン株式会社 | 酸化物半導体を用いた表示装置及びその製造方法 |
| JP5305630B2 (ja) | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
| US8143115B2 (en) | 2006-12-05 | 2012-03-27 | Canon Kabushiki Kaisha | Method for manufacturing thin film transistor using oxide semiconductor and display apparatus |
| TWI478347B (zh) * | 2007-02-09 | 2015-03-21 | 出光興產股份有限公司 | A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device |
| JP5354862B2 (ja) | 2007-02-19 | 2013-11-27 | キヤノン株式会社 | アモルファス絶縁体膜及び薄膜トランジスタ |
| US9082857B2 (en) * | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| CN103456794B (zh) * | 2008-12-19 | 2016-08-10 | 株式会社半导体能源研究所 | 晶体管的制造方法 |
-
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- 2009-08-04 AT AT09010057T patent/ATE534146T1/de active
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-
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- 2013-03-15 US US13/843,675 patent/US20130207106A1/en not_active Abandoned
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661952B (zh) * | 2008-08-28 | 2013-02-06 | 佳能株式会社 | 非晶氧化物半导体和使用其的薄膜晶体管 |
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| US8129718B2 (en) | 2012-03-06 |
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| JP5725698B2 (ja) | 2015-05-27 |
| CN103077961A (zh) | 2013-05-01 |
| KR20100026990A (ko) | 2010-03-10 |
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