CN102983093A - 一种用于led外延晶圆制程的石墨承载盘 - Google Patents

一种用于led外延晶圆制程的石墨承载盘 Download PDF

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CN102983093A
CN102983093A CN2012105063718A CN201210506371A CN102983093A CN 102983093 A CN102983093 A CN 102983093A CN 2012105063718 A CN2012105063718 A CN 2012105063718A CN 201210506371 A CN201210506371 A CN 201210506371A CN 102983093 A CN102983093 A CN 102983093A
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wafer
led
groove
graphite
processing procedure
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CN102983093B (zh
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谢祥彬
南琦
潘磊
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Anhui three Gas Co. Ltd.
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Anhui Sanan Optoelectronics Co Ltd
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Abstract

本发明旨在提供一种用于LED外延晶圆制程的石墨承载盘，该石墨承载盘包括若干个设置在承载盘上方的晶圆凹槽，用于置放外延晶圆衬底，所述晶圆凹槽的内边缘为下凹台阶，且具有复数个向内延伸的支撑部；还包括石墨承载盘的边缘以及设置在石墨承载盘中心的轴孔。根据不同工艺参数的需要，可设置不同数量及不同尺寸的凹槽。所述结构能够降低反应室气流干扰、提高晶圆的边缘良率。

Description

一种用于LED外延晶圆制程的石墨承载盘
技术领域
本发明涉及一种LED发光二极管外延（Epitaxy）晶圆制程中使用的石墨承载盘（Wafer carrier）。
背景技术
发光二极管（英文为Light Emitting Diode，简称LED）是一种固态半导体二极管发光器件，被广泛用于指示灯、显示屏等照明领域。
目前，LED 外延晶圆很多通过金属有机化合物化学气相沉淀（英文为Metal-organic Chemical Vapor Deposition ，简称MOCVD）获取，其制程简述如下：将外延晶圆衬底（如蓝宝石衬底）放入石墨承载盘（Wafer carrier）的凹槽上，连同石墨承载盘一起被传入MOCVD 反应室内，衬底连同石墨承载盘被一起加热到高温1000℃左右，反应室内通入有机金属化合物和五族气体，高温裂解后在晶圆衬底上重新聚合形成LED外延层。
LED发光二极管外延（Epitaxy）晶圆制程中，晶圆衬底直接承载在石墨承载盘上，因此石墨承载盘的结构对外延的良率起到重要的影响，其成为业界研究的重点。
发明内容
本发明旨在提供一种用于LED外延晶圆制程的石墨承载盘，其用于生长的LED外延片整体良率高，波长均匀性好。
本发明的技术方案为一种用于LED外延晶圆制程的石墨承载盘，包括若干个设置在承载盘上方的晶圆凹槽，用于置放外延晶圆衬底，所述晶圆凹槽的内边缘为下凹台阶，且具有复数个向内延伸的支撑部；还包括石墨承载盘的边缘以及设置在石墨承载盘中心的轴孔。根据不同工艺参数的需要，可设置不同数量及不同尺寸的凹槽。
进一步地，根据本发明，在外延生长过程中，所述晶圆凹槽的内边缘结构能够降低气流干扰、提高晶圆的边缘良率。
进一步地，根据本发明，优选的是：所述晶圆衬底的直径D1与台阶内径D2的关系为：0≤D1-D2＜0.06mm。
进一步地，根据本发明，优选的是：所述晶圆凹槽内边缘的台阶宽度为0.2mm～1.5mm，高度为0.03mm～0.5mm。
进一步地，根据本发明，优选的是：所述晶圆凹槽内边缘的台阶宽度为0.2mm~0.5mm，高度为0.03mm～0.5mm。
进一步地，根据本发明，优选的是：所述晶圆凹槽内边缘的支撑部为周期性分布的突起。
进一步地，根据本发明，优选的是：所述突起宽度为0.2mm～0.5mm，高度为0.03mm～0.5mm。
进一步地，根据本发明，优选的是：所述晶圆凹槽边缘的台阶高度与突起高度一致。
进一步地，根据本发明，优选的是：所述晶圆凹槽底部为平面、凸面或者凹面。
本发明公开的石墨承载盘，具有台阶状和向内延伸的支撑部的边缘的晶圆凹槽，可以将外延晶圆衬底直接托起，使外延晶圆衬底和石墨承载盘由直接接触变为非直接接触，故而外延片受热方式由原有的接触式受热变为热辐射式受热，有效减少因石墨承载盘本身质量及表面状况等因素造成外延片受热不均匀，波长均匀性及整体良率差的状况发生；同时还有效地避免因晶圆底部被托起后造成中空，反应室内气流可能灌入晶圆衬底底部造成扰流导致外延晶圆衬底翘曲变大等不利因素的发生。 
用于LED外延晶圆制程中的石墨承载盘，适用于LED外延制程的MOCVD方法。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描述概要，不是按比例绘制。
图1 是典型的LED 外延用石墨承载盘截面图。
图2是石墨承载盘平盘的晶圆凹槽的截面图。
图3是石墨承载盘平盘的晶圆凹槽的剖面图。
图4是石墨承载盘台阶状边缘盘的晶圆凹槽的截面图。
图5是石墨承载盘台阶状边缘盘的晶圆凹槽的剖面图。
图6是石墨承载盘突起状边缘盘的晶圆凹槽的截面图。
图7是石墨承载盘突起状边缘盘的晶圆凹槽的剖面图。
图8是本发明实施例1具有齿圈状台阶式边缘石墨盘承载盘的晶圆凹槽的截面图。
图9是本发明实施例1具有齿圈状台阶式边缘石墨盘承载盘的晶圆凹槽的立体图。
图10是本发明实施例1具有齿圈状台阶式边缘石墨盘承载盘的晶圆凹槽的剖面图。
图11是本发明实施例2具有齿圈状台阶式边缘石墨盘承载盘的晶圆凹槽的剖面图。
图12是本发明实施例3具有齿圈状台阶式边缘石墨盘承载盘的晶圆凹槽的剖面图。
符号说明
1：石墨承载盘上的晶圆凹槽；
2：石墨承载盘的边缘；
3：石墨承载盘中心的轴孔；
4：平盘晶圆凹槽的内边缘；
5：平盘晶圆凹槽的底面；
6：台阶状边缘盘晶圆凹槽的内边缘； 
7：台阶状边缘盘台阶状边缘；
8：台阶状边缘盘晶圆凹槽底部； 
9：突起状边缘盘晶圆凹槽的内边缘； 
10：突起状边缘盘突起状边缘； 
11：突起状边缘盘晶圆凹槽底部； 
12：具有台阶状和突起状边缘的晶圆凹槽的内边缘；
13：具有台阶状和突起状边缘的晶圆凹槽的台阶；
14：具有台阶状和突起状边缘的晶圆凹槽的突起；
15：具有台阶状和突起状边缘的晶圆凹槽的下凹型底部；
16：外延晶圆衬底；
17：反应室内流经晶圆衬底和晶圆凹槽上方的气流；
18：晶圆衬底与晶圆凹槽之间的空隙；
19：具有台阶状和突起状边缘的晶圆凹槽的平面型底部；
20：具有台阶状和突起状边缘的晶圆凹槽的上凸型底部。
具体实施方式
以下结合附图和具体实施例对本发明作进一步的详细描述,有关本发明的相关技术内容，特点与功效，将可清楚呈现。
图1展示了典型的LED 外延用石墨承载盘截面图，其上分布为若干个设置在承载盘上方的晶圆凹槽1（英文可称之为Pocket Profile），用于置放外延晶圆衬底。目前LED石墨盘的晶圆凹槽1设计主要有三种：平盘（Flat盘），台阶状边缘盘（Rim盘）和突起状边缘盘（Tab盘）。
请参考图2~3，平盘的晶圆凹槽边缘为平整光滑的圆筒形表面，当外延晶圆衬底承载于其上时，衬底与石墨承载盘底部为直接接触，当在反应室室中加热时，热能从石墨承载盘传导到衬底的方式为接触式，石墨承载盘与衬底的接触面的特性直接决定衬底受热是否均匀。由于平盘的单片晶圆凹槽设计使得外延晶圆衬底和石墨承载盘直接接触，受热方式为接触式传热，外延晶圆衬底的受热均匀程度以及外延良率很大程度上受制于石墨承载盘本身质量以及表面等状况的影响。
请参考图4~5，台阶状边缘盘的晶圆凹槽边缘设计有一圈台阶用于将晶圆衬底直接托起，避免了晶圆衬底和石墨承载盘晶圆凹槽底部直接接触，使晶圆衬底的受热方式变为接触式传热，有效地改善晶圆衬底的受热均匀程度，但是由于受台阶状边缘盘中台阶的影响，衬底与台阶接触的部分会由于直接接触石墨盘导致温度过高报废，会牺牲掉相当部分的芯粒，进而影响了芯粒良率。
请参考图6~7，突起状边缘盘的晶圆凹槽边缘用突起状边缘盘代替台阶状边缘盘，但由于衬底边缘大部分则被暴露于反应室的气流干扰之下，气流会流入衬底与石墨盘晶圆凹槽之间的空隙，导致在晶圆衬底底部形成严重的扰流，使外延片翘曲严重，导致整体外延波长良率偏低。
现有的三种类型的石墨承载盘，在量产中均未能很好解决LED外延片外延波长及标准差（STD）良率问题，因此如何提升外延良率及减小石墨承载盘对外延制程的影响成为人们研究的重点。
针对上述石墨承载盘的不足，下面各实施例提出一种兼具台阶状和突起状凹槽边缘设计的用于LED外延晶圆制程的石墨承载盘，由该石墨承载盘所生长的LED外延片整体良率高，波长均匀性好，克服了传统石墨承载盘的整体外延片良率不高及受热不均匀造成的外延片波长均匀性分布不稳定的缺点。
下面各实施例公开了一种石墨承载盘，包括若干个设置在承载盘上方的晶圆凹槽，用于置放外延晶圆衬底，晶圆凹槽的内边缘为下凹台阶，且具有复数个向内延伸的支撑部。石墨承载盘还包括石墨承载盘的边缘以及设置在石墨承载盘中心的轴孔。根据不同工艺参数的需要，可设置不同数量及不同尺寸的凹槽。
下面结合实施例和附图对本发明的具体实施做进一步的说明。
实施例1
参照图1及图8~图10所示，一种LED外延晶圆制程的石墨承载盘，包括：12个晶圆凹槽1、石墨承载盘的边缘2以及设置在石墨承载盘中心的轴孔3，其中，晶圆凹槽1设置在承载盘上方，用于置放外延晶圆衬底16。晶圆凹槽1的内边缘12具有台阶13和突起14，晶圆凹槽1的底部15为凹面型，下凹深度H2为5μm～30μm，突起14呈周期性分布。晶圆凹槽的台阶宽度W为0.2mm，高度H1为0.03mm。晶圆凹槽的突起宽度L为0.2mm，高度H1为0.03mm。晶圆衬底的直径D1与台阶内径D2相同，使得晶圆衬底16正好置于突起状边缘之上，即由12个周期性分布的向内延伸的支撑部14支撑，不仅避免晶圆衬底与台阶接触的外围部分会由于直接接触石墨承载盘导致温度过高报废，还可以避免气流流入衬底与石墨盘晶圆凹槽之间的空隙，导致在晶圆衬底底部形成严重的扰流，使外延片翘曲严重。
实施例2
参照图11，与实施例1不同的是：本实施例的晶圆凹槽底部19为平面型。其中，晶圆凹槽的台阶13宽度W为1.0mm，高度H1为0.15mm。晶圆凹槽的突起14宽度W为0.4mm，高度H1为0.15mm。晶圆衬底的直径D1比台阶内径D2大0.04mm，呈周期性分布突起数量为6个，使得晶圆衬底大部分置于突起状边缘之上，晶圆衬底的少部分外围置于台阶状边缘之上。为了既保证晶圆凹槽的内边缘下凹台阶和向内延伸的支撑部能够有效支撑住晶圆衬底，又尽量减少晶圆衬底与石墨承载盘的接触面积，因而与实施例1相比，晶圆凹槽的突起数量减少至6个，即可实现不仅尽可能减少晶圆衬底的外围部分与台阶接触会由于直接接触石墨承载盘导致温度过高报废，还可以避免气流流入衬底与石墨盘晶圆凹槽之间的空隙，导致在晶圆衬底底部形成严重的扰流，使外延片翘曲严重。
实施例3
参照图12，与实施例2不同的是：本实施例的晶圆凹槽底部20为凸面型，其上凸高度H3为5μm～30μm。其中，晶圆凹槽的台阶13宽度W为1.5mm，高度H1为0.5mm。晶圆凹槽的突起14宽度W为0.5mm，高度H1为0.5mm。晶圆衬底的直径D1比台阶内径D2大0.05mm，呈周期性分布突起数量为4个。与实施例2相比，由于晶圆衬底架在晶圆凹槽的内边缘下凹台阶上的部分稍多，所以还可以进一步减少突起数量的设置，即减少至4个周期性分布，亦可实现不仅尽可能减少晶圆衬底的外围部分与台阶接触会由于直接接触石墨承载盘导致温度过高报废，还可以避免气流流入衬底与石墨盘晶圆凹槽之间的空隙，导致在晶圆衬底底部形成严重的扰流，使外延片翘曲严重。
上述兼具台阶状和突起状边缘的设置，一方面边缘的晶圆凹槽的突起14可以将外延晶圆衬底边缘直接托起，使外延晶圆衬底除了与晶圆凹槽的突起14接触的大部分（部分实施例还包括晶圆衬底外围的小部分），其余均悬空置于石墨承载盘凹槽上，在外延生长时，外延晶圆衬底由原来的热传导方式受热变为热辐射式受热，大大改善外延晶圆衬底在高温受热时在单位面积上受热效率的一致性，从而可以大大提升外延片波长均匀性及波长良率；另一方面，晶圆凹槽的台阶13在外延晶圆衬底边缘可以有效阻止反应室气流17流入晶圆衬底与晶圆凹槽之间的空隙18中造成扰流，进而有效改善外延波长均匀性及波长良率。
上述各实施例提出的石墨承载盘，适用于LED外延制程的MOCVD方法。经测定，藉由本发明的石墨承载盘，在外延生长过程中，晶圆凹槽的内边缘结构能够降低气流干扰、提高晶圆的边缘良率。具体来说，其外延波长均匀性及波长良率，相较传统石墨承载盘的成长的外延波长均匀性及波长良率平均可以提升10%以上，大大提升了外延产品良率，对于减少LED单片产出成本，提升外延质量均匀性有显著功效。
应当理解的是，上述具体实施方案为本发明的优选实施例，本发明的范围不限于该实施例，凡依本发明所做的任何变更，皆属本发明的保护范围之内。

Claims (10)

1.一种用于LED发光二极管外延制程中的石墨承载盘，其特征在于：包括若干个设置在承载盘上方的晶圆凹槽，用于置放外延晶圆衬底，所述晶圆凹槽的内边缘为下凹台阶，且具有复数个向内延伸的支撑部。
2.根据权利要求1所述的用于LED发光二极管外延制程中的石墨承载盘，其特征在于：在外延生长过程中，所述晶圆凹槽的内边缘结构能够降低气流干扰、提高晶圆的边缘良率。
3.根据权利要求1所述的用于LED发光二极管外延制程中的石墨承载盘，其特征在于：所述晶圆衬底的直径D1与台阶内径D2的关系为：0≤D1-D2＜0.06mm。
4.根据权利要求1所述的用于LED发光二极管外延制程中的石墨承载盘，其特征在于：所述晶圆凹槽内边缘的台阶宽度为0.2mm～1.5mm。
5.根据权利要求4所述的用于LED发光二极管外延制程中的石墨承载盘，其特征在于：所述晶圆凹槽内边缘的台阶宽度为0.2mm~0.5mm。
6.根据权利要求1所述的用于LED发光二极管外延制程中的石墨承载盘，其特征在于：所述晶圆凹槽内边缘的支撑部为周期性分布的突起。
7.根据权利要求5所述的用于LED发光二极管外延制程中的石墨承载盘，其特征在于：所述突起宽度为0.2mm～0.5mm。
8.根据权利要求5或6所述的用于LED发光二极管外延制程中的石墨承载盘，其特征在于：所述晶圆凹槽边缘的台阶高度与突起高度一致。
9.根据权利要求1所述的用于LED发光二极管外延制程中的石墨承载盘，其特征在于：所述晶圆凹槽底部为平面、凸面或者凹面。
10.一种LED外延制程的MOCVD方法，其特征在于：使用权利要求1所述的用于LED发光二极管外延制程中的石墨承载盘，以所述晶圆凹槽的内边缘结构能够降低气流干扰、提高晶圆的边缘良率。
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