CN104409402A - 用于led外延晶圆制程的石墨承载盘 - Google Patents

用于led外延晶圆制程的石墨承载盘 Download PDF

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CN104409402A
CN104409402A CN201410838373.6A CN201410838373A CN104409402A CN 104409402 A CN104409402 A CN 104409402A CN 201410838373 A CN201410838373 A CN 201410838373A CN 104409402 A CN104409402 A CN 104409402A
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carrier
graphite
led epitaxial
wafer
manufacture process
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CN104409402B (zh
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郑锦坚
寻飞林
邓和清
李志明
杜伟华
伍明跃
周启伦
林峰
李水清
康俊勇
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Quanzhou Sanan Semiconductor Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735Closed carriers
    • H01L21/67386Closed carriers characterised by the construction of the closed carrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere

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Abstract

本发明公开了一种用于LED外延晶圆制程的石墨承载盘,包括若干个设置在承载盘上方的晶圆凹槽,用于置放外延晶圆衬底,其特征在于:所述承载盘的中心区域上设置有凸部结构,能够减小外延生长过程中的承载盘中心区域的涡流面积,改善内圈的外延晶圆朝向承载盘轴中心的局部区域发光强度偏低的问题,从而改善内圈的亮度均匀性,提升内外圈外延片的亮度整体均匀性。

Description

用于LED外延晶圆制程的石墨承载盘
技术领域
本发明属于半导体技术领域,尤其涉及一种LED外延晶圆制程中使用的石墨承载盘。
背景技术
 发光二极管(英文为Light Emitting Diode,简称LED)是一种固态半导体二极管发光器件,被广泛用于指示灯、显示屏等照明领域。
目前,LED外延晶圆(或称外延片)一般是通过金属有机化合物化学气相沉淀(英文为Metal-organic Chemical Vapor Deposition,简称MOCVD)获得,其制程一般为:将外延晶圆衬底(如蓝宝石衬底)放入石墨承载盘(英文为Wafer carrier)的凹槽上,连同石墨承载盘一起被传入MOCVD反应室内,衬底连同石墨承载盘被一起加热到高温1000℃左右,反应室内通入有机金属化合物和III-V族气体,高温裂解后在晶圆衬底上重新聚合形成LED外延层。
如图1所示的传统的LED外延制程用石墨承载盘俯视图,其上分布为若干个设置在石墨承载盘上方的内圈晶圆凹槽100和外圈晶圆凹槽101,用于置放外延晶圆衬底。采用传统的MOCVD反应室生长LED外延片,如图2所示,由于从顶盖往下喷的高速旋转气流在石墨承载盘的中心位置会产生一定的热浮力对流,形成局部区域的涡流102,引起内圈的外延片(以衬底平边朝向承载盘中心为例)在靠平边约0~20mm区域的微小Pits的位错密度变多、XRD(002)面和XRD(102)面的半高宽较外延片中心区域偏大,引起该局部区域的非辐射复合发光变大,发光强度偏低(下降约40~60%),导致内圈的外延片产生亮度不均匀的问题。
发明内容
为解决以上现有技术不足,本发明提供一种LED外延晶圆制程的石墨承载盘,其用于外延生长的LED晶圆,改善外延生长过程中的气场均匀性,提高内圈与外圈之间的外延片的亮度均匀性。
本发明的技术方案为:用于LED外延晶圆制程的石墨承载盘,包括若干个设置在承载盘上方的晶圆凹槽,用于置放外延晶圆衬底,其特征在于:所述承载盘的中心区域上设置有凸部结构,其中心高边缘低,作为导流层,用于改善中心位置的涡流。
根据不同工艺参数的需要,可设置不同数量及不同尺寸的晶圆凹槽,晶圆凹槽的内外圈数量不局限为2圈,可为3圈或3圈以上。
进一步地,根据本发明,优选的是:所述凸部结构沿承载盘中心呈轴对称。
进一步地,根据本发明,优选的是:所述凸部结构的形状为半球状或曲面状或三角锥状。
进一步地,根据本发明,优选的是:所述凸部结构与所述承载盘在制作过程中为一体成型。
进一步地,根据本发明,优选的是:所述凸部结构通过键合或粘合形成于所述承载盘的中心区域上。
进一步地,根据本发明,优选的是:所述凸部结构的材料为石墨或碳化硅或钛金属或钨金属或前述任意组合。
进一步地,根据本发明,优选的是:所述凸部结构的宽度为10~60mm,高度为10~50mm。
本发明公开的石墨承载盘,通过在承载盘的中心区域上设置有凸部结构,能够减小外延生长过程中的承载盘中心区域的涡流面积,改善内圈的外延晶圆朝向承载盘轴中心的局部区域发光强度偏低的问题,从而改善内圈的亮度均匀性,提升内外圈外延片的亮度整体均匀性。
用于LED外延晶圆制程中的石墨承载盘,适用于LED外延制程的MOCVD方法。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1是传统的LED外延用石墨承载盘俯视图。
图2是传统的LED外延用石墨承载盘剖视图。
图3是本发明实施例1的LED外延用石墨承载盘俯视图。
图4是本发明实施例1的LED外延用石墨承载盘剖视图。
图5是传统的石墨承载盘外延生长的内圈晶圆XRD(002)的半高宽Mapping图。
图6是传统的石墨承载盘外延生长的内圈晶圆XRD(102)的半高宽Mapping图。
图7是实施例1的石墨承载盘外延生长的内圈晶圆XRD(002)的半高宽Mapping图。
图8是实施例1的石墨承载盘外延生长的内圈晶圆XRD(102)的半高宽Mapping图。
图9是采用实施例1与常规的石墨承载盘外延生长蓝光LED晶圆的发光强度对比图。
图10是本发明实施例2的LED外延用石墨承载盘剖视图。
图11是本发明实施例3的LED外延用石墨承载盘剖视图。
图中符号说明
100:内圈晶圆凹槽;101:外圈晶圆凹槽;102:涡流;103:半球状凸部结构;104:曲面状凸部结构;105:三角锥状凸部结构。
具体实施方式
以下结合附图和具体实施例对本发明作进一步的详细描述,有关本发明的相关技术内容,特点与功效,将可清楚呈现。
下面结合实施例和附图对本发明的具体实施做进一步的说明。
实施例1
参照图3~图4所示,一种LED外延晶圆制程的石墨承载盘,包括:14个设置在承载盘上方的4寸晶圆凹槽,内圈分布有4个晶圆凹槽100,外圈分布有10个晶圆凹槽101,用于置放外延晶圆衬底(图中未示出),其中在所述承载盘的中心设置有凸部结构103,其中心高边缘低,作为导流层,用于改善中心位置的涡流102。
为便于充分均匀地改善中心位置的涡流102,优选凸部结构为沿承载盘中心呈轴对称,在本实施例优选凸部结构的形状为半球状。
凸部结构的材料可选石墨或碳化硅或钛金属或钨金属或前述任意组合,在本实施例优选凸部结构的材料为石墨,即与石墨承载盘材料保持一致,便于在制作过程中与晶圆凹槽一体成型,其加工参数宽度为10~60mm,高度为10~50mm,在本实施例优选凸部结构的宽度为40mm,高度(球径)为20mm。
由于常规的石墨承载盘置于MOCVD反应腔体中,顶盖往下喷的高速旋转气流会在石墨承载盘的中心位置会产生一定的热浮力对流,形成局部区域的涡流,引起内圈的外延片(以衬底平边朝向承载盘中心为例)在靠平边约0~20mm区域的微小Pits的位错密度变多、XRD(002)面和XRD(102)面的半高宽较外延片中心区域偏大(如图5和6所示)。本实施例采用在承载盘的中心设置半球状凸部结构103,可改变中心设置的气体流速和方向,降低热浮力对流即涡流102的产生机率和面积,改善内圈的外延晶圆朝向承载盘轴中心的局部区域发光强度偏低的问题,从而改善内圈的亮度均匀性,提升内外圈外延片的亮度整体均匀性。如图7和8所示,本实施例的石墨承载盘可以有效地缓解中心区域的热浮力对流产生的涡流的强度和面积,采用该石墨承载盘所生长的内圈晶圆在靠平边约0~20mm区域的XRD(002)面和XRD(102)面的半高宽较图5和6相比,得到明显改善。
上述实施例提出的石墨承载盘,适用于LED外延制程的MOCVD方法。如图9所示,经测定,藉由本发明的石墨承载盘,在外延生长过程中,在承载盘的中心设置半球状凸部结构,通过改善外延生长过程的气场均匀性,能够有效解决内圈外延片的局部区域(朝向轴中心)的亮度偏低的问题,改善内圈晶圆的发光强度(亮度)均匀性,从而提高内圈与外圈之间的外延片的亮度均匀性。
实施例2
参照图10所示,与实施例1不同的是,本实施例的凸起结构为曲面状,且凸起结构材料选用碳化硅,其通过键合形成于所述承载盘的中心区域上,从而改变中心设置的气体流速和方向,降低热浮力对流即涡流的产生机率和面积,改善内圈的外延晶圆朝向承载盘轴中心的局部区域发光强度偏低的问题,从而改善内圈的发光强度均匀性,提升内外圈外延片的亮度整体均匀性。
实施例3
参照图11所示,与实施例1不同的是,本实施例的凸起结构为三角锥状,作为导流层,从而改变中心设置的气体流速和方向,降低热浮力对流即涡流的产生机率和面积,改善内圈的外延晶圆朝向承载盘轴中心的局部区域发光强度偏低的问题,从而改善内圈的发光强度均匀性,提升内外圈外延片的亮度整体均匀性。
应当理解的是,上述具体实施方案为本发明的优选实施例,本发明的范围不限于该实施例,凡依本发明所做的任何变更,皆属本发明的保护范围之内。

Claims (10)

1.用于LED外延晶圆制程的石墨承载盘,包括若干个设置在承载盘上方的晶圆凹槽,用于置放外延晶圆衬底,其特征在于:所述承载盘的中心区域上设置有凸部结构,其中心高边缘低,作为导流层,用于改善中心位置的涡流。
2.根据权利要求1所述的用于LED外延制程的石墨承载盘,其特征在于:所述凸部结构沿承载盘中心呈轴对称。
3.根据权利要求1所述的用于LED外延制程的石墨承载盘,其特征在于:所述凸部结构的形状为半球状或曲面状或三角锥状。
4.根据权利要求1所述的用于LED外延制程的石墨承载盘,其特征在于:所述凸部结构与所述承载盘在制作过程中为一体成型。
5.根据权利要求1所述的用于LED外延制程的石墨承载盘,其特征在于:所述凸部结构通过键合或粘合形成于所述承载盘的中心区域上。
6.根据权利要求1所述的用于LED外延制程的石墨承载盘,其特征在于:所述凸部结构的材料为石墨或碳化硅或钛金属或钨金属或前述任意组合。
7.根据权利要求1所述的用于LED外延制程的石墨承载盘,其特征在于:所述凸部结构的宽度为10~60mm。
8.根据权利要求1所述的用于LED外延制程的石墨承载盘,其特征在于:所述凸部结构的高度为10~50mm。
9.根据权利要求1所述的用于LED外延制程的石墨承载盘,其特征在于:所述晶圆凹槽的内外圈数量为2圈或2圈以上。
10.一种LED外延制程的MOCVD方法,其特征在于:使用权利要求1~9所述的任一项石墨承载盘,以减小外延生长过程中的承载盘中心区域的涡流面积,改善中心区域外延晶圆发光强度偏低的问题,从而改善内圈的亮度均匀性,提升内外圈外延片的亮度整体均匀性。
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