CN102915986A - 芯片封装结构 - Google Patents

芯片封装结构 Download PDF

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Publication number
CN102915986A
CN102915986A CN2012104445024A CN201210444502A CN102915986A CN 102915986 A CN102915986 A CN 102915986A CN 2012104445024 A CN2012104445024 A CN 2012104445024A CN 201210444502 A CN201210444502 A CN 201210444502A CN 102915986 A CN102915986 A CN 102915986A
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China
Prior art keywords
ball
metal
under
electrode
metal electrode
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CN2012104445024A
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CN102915986B (zh
Inventor
林仲珉
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Tongfu Microelectronics Co Ltd
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Nantong Fujitsu Microelectronics Co Ltd
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Priority to CN201210444502.4A priority Critical patent/CN102915986B/zh
Publication of CN102915986A publication Critical patent/CN102915986A/zh
Priority to US14/441,477 priority patent/US9293432B2/en
Priority to PCT/CN2013/086211 priority patent/WO2014071814A1/zh
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Publication of CN102915986B publication Critical patent/CN102915986B/zh
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Abstract

一种芯片封装结构，包括：半导体衬底；位于所述半导体衬底内的金属焊盘；位于所述半导体衬底上的绝缘层，所述绝缘层具有暴露所述金属焊盘的开口；位于所述金属焊盘上的球下金属电极；位于所述球下金属电极表面的焊球，所述焊球具有第一围裙结构，所述第一围裙结构覆盖所述球下金属电极底部周围的部分金属焊盘。本发明的芯片封装结构增大了焊球和金属焊盘之间的附着力，提升了芯片封装的可靠性。

Description

芯片封装结构
技术领域
本发明涉及半导体技术领域，尤其涉及一种芯片封装结构。
背景技术
传统技术上，IC芯片与外部电路的连接是通过金属引线键合（WireBonding）的方式实现。随着IC芯片特征尺寸的缩小和集成电路规模的扩大，引线键合技术不再适用。晶圆级芯片尺寸封装（Wafer Level Chip ScalePackaging，WLCSP）技术是对整片晶圆进行封装测试后再切割得到单个成品芯片的技术，封装后的芯片尺寸与裸片完全一致。晶圆级芯片尺寸封装技术彻底颠覆了传统封装如陶瓷无引线芯片载具（Ceramic Leadless Chip Carrier）、有机无引线芯片载具（Organic Leadless Chip Carrier）的模式，顺应了市场对微电子产品日益轻、小、短、薄化和低价化要求。经晶圆级芯片尺寸封装技术封装后的芯片尺寸达到了高度微型化，芯片成本随着芯片尺寸的减小和晶圆尺寸的增大而显著降低。晶圆级芯片尺寸封装技术是可以将IC设计、晶圆制造、封装测试、整合为一体的技术，是当前封装领域的热点和未来发展的趋势。
现有技术公开了一种晶圆级芯片尺寸封装技术，请参考图1，图1为现有技术晶圆级芯片尺寸封装结构的剖面示意图，包括：半导体衬底101；位于所述半导体衬底101内部的金属焊盘103；位于所述半导体衬底101表面的绝缘层102，所述绝缘层102具有暴露出所述金属焊盘103的开口；位于所述开口内且覆盖部分所述金属焊盘103的球下金属电极104；位于所述球下金属电极104上的焊球105，所述焊球105覆盖球下金属电极104的上表面。
现有技术中焊球105与球下金属电极104的接触面积小，焊球105与球下金属电极104之间的附着力差。另外，现有技术中焊球105直接位于球下金属电极104之上，球下金属电极104的材料通常为铜，焊球105的材料通常为锡，锡原子会扩散进入铜电极中去，而铜原子也同时会扩散进入锡球中，形成介面合金共化物（IMC：Intermetallic Compound）和空洞，介面合金共化物具有脆性，将会影响焊点的机械强度和寿命。
现有技术的芯片封装结构可靠性差。
其他有关芯片的分装方法还可以参考公开号为CN101211791的中国发明专利申请，其公开了一种晶圆级芯片封装制程与芯片封装结构。
发明内容
本发明解决的问题是现有技术焊球和球下金属电极之间附着力差，可靠性差。
为解决上述问题，本发明提供了一种芯片封装结构，包括：半导体衬底；位于所述半导体衬底内的金属焊盘；位于所述半导体衬底上的绝缘层，所述绝缘层具有暴露所述金属焊盘的开口；位于所述金属焊盘上的球下金属电极；位于所述球下金属电极表面的焊球，所述焊球具有第一围裙结构，所述第一围裙结构覆盖所述球下金属电极底部周围的金属焊盘。
可选的，所述金属焊盘的材料为金、铜、铝或者银。
可选的，所述金属焊盘为再分布式焊盘。
可选的，所述球下金属电极的材料为金、铜、银中的一种，或者所述球下金属电极的材料为含金、铜、或银的合金。
可选的，所述球下金属电极具有电极体部和电极尾部，所述电极体部位于所述球下金属电极底部且与所述金属焊盘相接，所述电极尾部位于所述球下金属电极顶部。
可选的，所述电极尾部高度为所述电极体部高度的0.005~1.5倍。
可选的，所述球下金属电极表面具有覆盖层，所述覆盖层具有第二围裙结构，所述第二围裙结构覆盖所述球下金属电极底部周围的金属焊盘，所述第二围裙结构表面被所述第一围裙结构覆盖。
可选的，所述覆盖层为防扩散层和浸润层的堆叠结构，所述防扩散层位于所述球下金属电极表面，所述浸润层位于所述防扩散层表面，所述防扩散层具有第三围裙结构，所述浸润层具有第四围裙结构。
可选的，所述防扩散层的材料为镍。
可选的，所述防扩散层的厚度为0.05μm至5μm。
可选的，所述浸润层的材料为锡、金、银中的一种，或者所述浸润层的材料为含锡、金、或银的合金。
可选的，所述浸润层的厚度为0.05μm至10μm。
可选的，所述焊球的材料为锡或者锡合金。
与现有技术相比，本发明具有以下优点：
所述焊球具有第一围裙结构，所述第一围裙结构覆盖所述球下金属电极底部周围的部分金属焊盘。所述第一围裙结构增大了焊球和金属焊盘的接触面积，增强了焊球和金属焊盘的附着力，使得焊球在受外力作用时更不容易从金属焊盘表面脱落。所述覆盖层具有第二围裙结构，覆盖层的第二围裙结构增大了覆盖层和金属焊盘的接触面积，增强了焊球、覆盖层、球下金属电极和金属焊盘的附着力。
进一步的，所述覆盖层为防扩散层和浸润层的堆叠结构，所述防扩散层位于所述球下金属电极表面，所述浸润层位于所述防扩散层表面。现有技术中，焊球直接位于球下金属电极之上，球下金属电极与焊球之间通过原子的扩散会形成介面合金共化物和空洞，介面合金共化物具有脆性，将会影响焊点的机械强度和寿命。在本发明中，在球下金属电极表面先形成防扩散层，所述防扩散层的材料为镍，与球下金属电极相比防扩散层与焊球形成介面合金共化物要慢很多，可以作为球下金属电极和焊球之间的阻隔层，防止形成介面合金共化物和空洞。而由于防扩散层容易氧化，进一步的在防扩散层表面形成浸润层防止防扩散层的氧化，另外，浸润层与后续形成的焊球的材料浸润，附着力更好。所述浸润层的材料为锡、金、银中的一种，或者所述浸润层的材料为含锡、金、或银的合金。与现有技术相比，在球下金属电极表面形成覆盖层改善了介面合金共化物问题，提升了芯片封装的可靠性。
进一步的，所述球下金属电极具有电极体部和电极尾部，所述电极体部位于所述球下金属电极底部且与所述金属焊盘相接，所述电极尾部位于所述球下金属电极顶部。所述电极尾部嵌入所述焊球内，增大了球下金属电极与焊球的接触面积，因此球下金属电极与焊球的附着力增强，使得焊球在受外力作用时，更不容易从球下金属电极表面脱落。
附图说明
图1是现有技术芯片封装结构示意图；
图2为本发明第一实施例芯片封装结构示意图；
图3为本发明第二实施例芯片封装结构示意图；
图4为本发明第三实施例芯片封装结构示意图；
图5为本发明第四实施例芯片封装结构示意图。
具体实施方式
由背景技术可知，请继续参考图1，现有技术中，焊球105位于球下金属电极104之上，焊球105与球下金属电极104的上表面接触，接触面积小，焊球105与球下金属电极104之间的附着力差。另外，球下金属电极104的材料通常为铜，焊球105的材料通常为锡，在铜球下金属电极表面形成锡球时，锡原子会扩散进入铜球下金属电极中去，而铜原子也同时会扩散进入锡球中，形成介面合金共化物（IMC：Intermetallic Compound）和空洞，介面合金共化物具有脆性，将会影响焊点的机械强度和寿命。
本发明的发明人经过创造性劳动，提出一种新的芯片封装结构，包括：半导体衬底；位于所述半导体衬底内的金属焊盘；位于所述半导体衬底上的绝缘层，所述绝缘层具有暴露所述金属焊盘的开口；位于所述金属焊盘上的球下金属电极，所述球下金属电极的下表面积小于金属焊盘面积；位于所述球下金属电极表面的焊球，所述焊球具有第一围裙结构，所述第一围裙结构覆盖所述球下金属电极底部周围的金属焊盘。
下面结合说明书附图描述本发明提供的四个具体实施例，上述的目的和本发明的优点将更加清楚。需要说明的是，提供这些附图的目的是有助于理解本发明的实施例，而不应解释为对本发明的不当的限制。为了更清楚起见，图中所示尺寸并未按比例绘制，可能会做放大、缩小或其他改变。下面的描述中阐述了很多具体细节以便充分理解本发明。但是本发明能够以很多不同于在此描述的其他方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似推广，因此本发明不受下面公开的具体实施例的限制。
第一实施例
请参考图2，图2为本发明第一实施例的芯片封装结构示意图，包括：半导体衬底201；位于所述半导体衬底201内的金属焊盘203；位于所述半导体衬底201上的绝缘层202，所述绝缘层202具有暴露所述金属焊盘203的开口；位于所述金属焊盘203上的球下金属电极204；位于所述球下金属电极204表面的焊球207，所述焊球207具有第一围裙结构207a，所述第一围裙结构207a覆盖所述球下金属电极204底部周围的金属焊盘203。
具体地，所述半导体衬底201可以为单晶硅、SOI（绝缘体上硅）、SiGe或III-V族化合物晶圆，所述半导体衬底201包括位于其内部和表面的一层或若干层介质层，所述半导体衬底201还可以包括制作于其上的半导体器件、金属互连以及其他半导体结构。
所述金属焊盘203位于所述半导体衬底201内，所述金属焊盘203为所述半导体衬底201的顶层互连金属电极，所述金属焊盘的材料为金、铜、铝或者银，所述金属焊盘203在封装结构中用于连接芯片内部电路和外部封装部件。
所述绝缘层202位于所述半导体衬底201上，所述绝缘层202具有暴露所述金属焊盘203的开口。所述绝缘层202包括钝化层和聚合物层（未示出），所述钝化层用于保护金属焊盘203、电学隔离和形成暴露所述金属焊盘203的开口，所述钝化层的材料可以为氧化硅、氮化硅或者低K材料；所述聚合物层位于所述钝化层上，所述聚合物层具有暴露所述金属焊盘203的开口，所述聚合物的材料可以为聚酰亚胺（Polyimide）、环氧树脂（Epoxy）或苯并环丁烯树脂（Benzocyclobutene）。
在一具体实施例中，所述半导体衬底201为单晶硅，所述半导体衬底201还包括了制作于其上的半导体器件、金属互联以及其他半导体结构。所述绝缘层202包括材料为氧化硅的钝化层和材料为聚酰亚胺的聚合物层，所述绝缘层202具有暴露金属焊盘203的开口，所述金属焊盘203为所述半导体衬底201的顶层互联金属电极，所述金属焊盘203的材料为铜。
具体地，位于所述金属焊盘203上的球下金属电极204，所述球下金属电极204用于连接金属焊盘203和焊球207。所述球下金属电极204的材料为金、铜、银中的一种，或者所述球下金属电极204的材料为含金、铜、或银的合金。
在一实施例中，形成所述球下金属电极204的工艺具体为：在所述半导体衬底201表面形成光刻胶层，所述光刻胶层具有暴露部分所述金属焊盘203的开口，使用电镀、物理气相沉积或者蒸发气相沉积的工艺向所述开口填充金属材料，去除光刻胶层，所述金属材料形成球下金属电极204。
在另一实施例中，形成所述球下金属电极204的工艺为引线键合，具体步骤为：金属引线通过键合头到达金属焊盘203顶部，利用氢氧焰或者电气放电系统产生电火花以熔化金属引线，在表面张力的作用下，熔融金属凝固形成球形（球直径一般是金属引线直径的1.5倍至4倍），降下键合头，在适当的压力，温度，动能和时间内将金属球压在金属焊盘203上，在此过程中，通过键合头向金属球施加压力，同时促进引线金属和金属焊盘203发生塑性形变和原子之间相互扩散，形成球下金属电极204，利用键合线夹切断金属引线。
具体地，位于所述球下金属电极204表面的焊球207，所述焊球207具有第一围裙结构207a，所述第一围裙结构207a覆盖所述球下金属电极204底部周围的部分金属焊盘203。所述第一围裙结构207a增大了焊球207和金属焊盘203的接触面积，增强了焊球207和金属焊盘203的附着力，使得焊球207在受外力作用时更不容易从金属焊盘表面脱落。
所述焊球207可以通过印刷工艺形成，所述焊球207的材料为锡或者锡合金。形成焊球207的具体工艺为：将焊料通过网板印刷于球下金属电极204上，然后进行高温回流，在表面张力作用下，使得所述焊料转变形成焊球207。由于焊料材料浸润球下金属电极材料和金属焊盘材料，形成的焊球207覆盖球下金属电极204和金属焊盘203，即焊球207具有第一围裙结构207a，所述第一围裙结构207a覆盖所述球下金属电极204底部周围的金属焊盘203。
第二实施例
请参考图3，图3为本发明第二实施例的芯片封装结构示意图，包括：半导体衬底301；位于所述半导体衬底301内的金属焊盘303；位于所述半导体衬底301上的绝缘层302，所述绝缘层302具有暴露所述金属焊盘303的开口；位于所述金属焊盘303上的球下金属电极304，所述球下金属电极304具有电极体部304a和电极尾部304b，所述电极体部304a位于所述球下金属电极304底部且与所述金属焊盘303相接，所述电极尾部304b位于所述球下金属电极304顶部；位于所述球下金属电极304表面的焊球307，所述焊球307具有第一围裙结构307a，所述第一围裙结构307a覆盖所述球下金属电极304底部周围的金属焊盘303。
本实施例与第一实施例相比，区别在于：所述球下金属电极304具有电极体部304a和电极尾部304b，所述电极体部304a位于所述球下金属电极304底部且与所述金属焊盘303相接，所述电极尾部304b位于所述球下金属电极304顶部。其中，所述电极体部304a连接金属焊盘303和焊球并支撑所述电极尾部304b，所述电极尾部304b嵌入焊球内，增大了球下金属电极304与焊球的接触面积，因此球下金属电极304与焊球的附着力增强，使得焊球在受外力作用时，更不容易从球下金属电极304表面脱落。
需要说明的是，所述球下金属电极304可以通过引线键合（Wire Bonding）的工艺来形成，下面结合一具体实施例中所述球下金属电极304的形成方法来进一步说明其特征。使用引线键合方法形成所述球下金属电极304的工艺具体为：金属引线通过键合头到达金属焊盘303顶部，利用氢氧焰或者电气放电系统产生电火花以熔化金属引线，在表面张力的作用下，熔融金属凝固形成球形（球直径一般是金属引线直径的1.5倍至4倍），降下键合头，在适当的压力，温度，动能和时间内将金属球压在金属焊盘303上，在此过程中，通过键合头向金属球施加压力，同时促进引线金属和金属焊盘303发生塑性形变和原子之间相互扩散，形成电极体部304a，然后，键合头抬起，金属引线起弧到特定高度（待形成电极尾部304b高度），利用键合线夹切断金属引线，电极体部304a上金属引线即电极尾部304b，形成球下金属电极304。需要说明的是，引线键合常用于半导体封装内部芯片和外部管脚以及芯片之间连接的工艺，而本发明的发明人通过改进引线键合工艺，将其应用于球下金属电极304的形成工艺中，能够在形成电极体部304a的同时采用键合头抬起后金属引线起弧形成电极尾部304b，工艺简单，形成效率高。
所述球下金属电极304的材料为金、铜、银中的一种，或者所述球下金属电极304的材料为含金、铜、或银的合金。所述电极尾部304b的高度为所述电极体部304a高度的0.005~1.5倍，当电极尾部304b的高度低于电极体部304a高度的0.005倍时，电极尾部304b嵌入后续形成的焊球307的长度有限，对球下金属电极304和焊球的附着力增强有限；而当电极尾部304b的高度高于电极体部304a的高度的1.5倍时，由于电极尾部304b通过引线键合后起弧形成，电极尾部304b与电极体部304a相比直径较细，且金属质地较软，制造过程中容易变形弯曲，成品率降低，且不利于倒芯片封装。
在一具体实施例中，所述球下金属电极304的材料为铜，所述电极尾部304b的高度与所述电极体部304a的高度相同。
本实施例中所述半导体衬底301、所述绝缘层302、所述金属焊盘303、所述焊球307的材料和结构与第一实施例类似，详细介绍请参考第一实施例，在此不再赘述。
第三实施例
请参考图4，图4为本发明第三实施例的芯片封装结构示意图，包括：半导体衬底401；位于所述半导体衬底401内的金属焊盘403；位于所述半导体衬底401上的绝缘层402，所述绝缘层402具有暴露所述金属焊盘403的开口；位于所述金属焊盘403上的球下金属电极404，所述球下金属电极404具有电极体部和电极尾部，所述电极体部位于所述球下金属电极404底部且与所述金属焊盘403相接，所述电极尾部位于所述球下金属电极404顶部；位于所述球下金属电极404表面的覆盖层，所述覆盖层具有第二围裙结构，所述第二围裙结构覆盖所述球下金属电极404底部周围的金属焊盘403；位于所述覆盖层表面的焊球407，所述焊球407具有第一围裙结构407a，所述第一围裙结构407a覆盖所述第二围裙结构。
本实施例与第二实施例相比，区别在于：所述球下金属电极404表面具有覆盖层，所述覆盖层具有第二围裙结构，所述第二围裙结构覆盖所述球下金属电极404底部周围的金属焊盘403。所述覆盖层为防扩散层405和浸润层406的堆叠结构，所述防扩散层405位于所述球下金属电极404表面，所述浸润层406位于所述防扩散层405表面。所述防扩散层405具有第三围裙结构405a，所述浸润层406具有第四围裙结构406a。所述第二围裙结构为第三围裙结构405a和第四围裙结构406a的堆叠结构。
所述防扩散层405具有第三围裙结构405a，所述第三围裙结构405a覆盖金属焊盘403表面，增加了防扩散层405和金属焊盘403的接触面积，增强了防扩散层405和金属焊盘403的附着力，另外，由于防扩散层405对球下金属电极404的包覆作用，球下金属电极404和金属焊盘403的附着力也得到了增强，使得球下金属电极404在受外力作用时，更不容易从金属焊盘403表面脱落。
所述防扩散层405的材料为镍，与球下金属电极404相比防扩散层405与焊球形成介面合金共化物要慢很多，可以作为球下金属电极404和焊球之间的阻隔层，防止形成介面合金共化物和空洞。介面合金共化物和空洞会影响焊点的机械强度和寿命，所以形成防扩散层405可以有效改善介面合金共化物问题，提升了芯片封装的可靠性。所述防扩散层405的厚度为0.05μm至5μm，所述防扩散层405的厚度跟芯片封装过程的工艺有关，当芯片封装过程的工艺温度越低时，所述防扩散层405的厚度可以减小。在一实施例中，所述防扩散层405为镍层，所述镍层的厚度为0.5μm至3μm。
所述防扩散层405通常为镍层，镍层容易氧化，造成界面电阻率增大，所以进一步的在镍层表面具有浸润层406以防止镍层的氧化，另外，浸润层406与后续形成的焊球的材料浸润，附着力更好。所述浸润层406的材料为锡、金、银中的一种，或者所述浸润层406的材料为含锡、金、或银的合金。所述浸润层406具有第四围裙结构406a，所述第四围裙结构406a起到增加浸润层406和防扩散层405接触面积的作用，并同第三围裙结构405a共同起到增强与金属焊盘403附着力的作用。所述第四围裙结构406a和第三围裙结构405a共同构成第二围裙结构。所述浸润层406的厚度为0.05μm至10μm，所述浸润层406的厚度也与芯片封装的工艺有关。在一实施例中，所述浸润层406为锡层，锡层在空气中不容易被氧化，且与后续形成的焊球材料浸润，附着力更好，所述锡层的厚度为0.1μm至5μm。
本实施例中所述半导体衬底401、所述绝缘层402、所述金属焊盘403、所述球下金属电极404，所述焊球407的材料和结构与第二实施例类似，详细介绍请参考第二实施例，在此不再赘述。
第四实施例
请参考图5，图5为本发明第四实施例的芯片封装结构示意图，包括：半导体衬底501；位于所述半导体衬底501内的金属电极508；位于所述半导体衬底501上的第一绝缘层509，所述第一绝缘层509覆盖部分所述金属电极508，所述第一绝缘层509具有暴露所述金属电极508的第一开口；位于所述第一绝缘层509上的过渡金属层510，所述过渡金属层510覆盖所述第一开口的侧壁和底表面，所述过渡金属层510沿所述第一开口表面形成第二开口；位于过渡金属层510上的金属焊盘503，所述金属焊盘503填充满所述第二开口；位于所述金属焊盘503上的第二绝缘层502，所述第二绝缘层具有暴露所述金属焊盘503的第三开口；位于所述金属焊盘503上的球下金属电极504，所述球下金属电极504具有电极体部和电极尾部，所述电极体部位于所述球下金属电极504底部且与所述金属焊盘503相接，所述电极尾部位于所述球下金属电极504顶部；位于所述球下金属电极504表面的覆盖层，所述覆盖层具有第二围裙结构，所述第二围裙结构覆盖所述球下金属电极504底部周围的金属焊盘503；位于所述覆盖层表面的焊球507，所述焊球507具有第一围裙结构507a，所述第一围裙结构507a覆盖所述第二围裙结构。
本实施例与第三实施例相比，区别在于：本实施例所述金属焊盘503为再分布式焊盘（RDL）。所述再分布式焊盘通过在芯片表面增加第一绝缘层509、过渡金属层510和第二绝缘层502形成，它可以根据封装工艺的设计规则将半导体衬底501内的金属电极508的位置重新排布为再分布式焊盘的位置。再分布式焊盘可以大大缩小芯片封装尺寸，达到高密度封装的需求，且提升了数据传输的速度和稳定性。所述再分布式焊盘的形成方法为本领域技术人员所熟知，在此不再赘述。
本实施例中所述半导体衬底501、所述球下金属电极504、所述防扩散层505、所述浸润层506、所述焊球507的材料和结构与第三实施例类似，详细介绍请参考第三实施例，在此不再赘述。
综上所述，与现有技术相比，本发明具有以下优点：所述焊球具有第一围裙结构，所述第一围裙结构覆盖所述球下金属电极底部周围的部分金属焊盘。所述第一围裙结构增大了焊球和金属焊盘的接触面积，增强了焊球和金属焊盘的附着力，使得焊球在受外力作用时更不容易从金属焊盘表面脱落。
在第二、第三和第四实施例中所述球下金属电极具有电极体部和电极尾部，所述电极体部位于所述球下金属电极底部且与所述金属焊盘相接，所述电极尾部位于所述球下金属电极顶部。所述电极尾部嵌入所述焊球内，增大了球下金属电极与焊球的接触面积，因此球下金属电极与焊球的附着力增强，使得焊球在受外力作用时，更不容易从球下金属电极表面脱落。
在第三、第四实施例中所述覆盖层为防扩散层和浸润层的堆叠结构，所述防扩散层位于所述球下金属电极表面，所述浸润层位于所述防扩散层表面。现有技术中，焊球直接位于球下金属电极之上，球下金属电极与焊球之间通过原子的相互扩散会形成介面合金共化物与空洞，且介面合金共化物具有脆性，将会影响焊点的机械强度和寿命。在本发明中，在球下金属电极表面先形成防扩散层，所述防扩散层的材料为镍，与球下金属电极相比防扩散层与焊球形成介面合金共化物要慢很多，可以作为球下金属电极和焊球之间的阻隔层，防止形成介面合金共化物和空洞。而由于防扩散层容易氧化，进一步的在防扩散层表面形成浸润层防止防扩散层的氧化，另外，浸润层与后续形成的焊球的材料浸润，附着力更好。所述浸润层的材料为锡、金、银中的一种，或者所述浸润层的材料为含锡、金、或银的合金。与现有技术相比，在球下金属电极表面形成覆盖层改善了介面合金共化物问题，提升了芯片封装的可靠性。另外，所述覆盖层具有第二围裙结构，覆盖层的第二围裙结构增大了覆盖层和金属焊盘的接触面积，增强了焊球、覆盖层、球下金属电极和金属焊盘的附着力。
本发明虽然已以较佳实施例公开如上，但其并不是用来限定本发明，任何本领域技术人员在不脱离本发明的精神和范围内，都可以利用上述揭示的方法和技术对本发明技术方案做出可能的变动和修改，因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化及修饰，均属于本发明技术方案的保护范围。

Claims (13)

1.一种芯片封装结构，其特征在于，包括：
半导体衬底；
位于所述半导体衬底内的金属焊盘；
位于所述半导体衬底上的绝缘层，所述绝缘层具有暴露所述金属焊盘的开口；
位于所述金属焊盘上的球下金属电极；
位于所述球下金属电极表面的焊球，所述焊球具有第一围裙结构，所述第一围裙结构覆盖所述球下金属电极底部周围的金属焊盘。
2.如权利要求1所述的芯片封装结构，其特征在于，所述金属焊盘的材料为金、铜、铝或者银。
3.如权利要求1所述的芯片封装结构，其特征在于，所述金属焊盘为再分布式焊盘。
4.如权利要求1所述的芯片封装结构，其特征在于，所述球下金属电极的材料为金、铜、银中的一种，或者所述球下金属电极的材料为含金、铜、或银的合金。
5.如权利要求1所述的芯片封装结构，其特征在于，所述球下金属电极具有电极体部和电极尾部，所述电极体部位于所述球下金属电极底部且与所述金属焊盘相接，所述电极尾部位于所述球下金属电极顶部。
6.如权利要求5所述的芯片封装结构，其特征在于，所述电极尾部高度为所述电极体部高度的0.005~1.5倍。
7.如权利要求1所述的芯片封装结构，其特征在于，所述球下金属电极表面具有覆盖层，所述覆盖层具有第二围裙结构，所述第二围裙结构覆盖所述球下金属电极底部周围的金属焊盘，所述第二围裙结构表面被所述第一围裙结构覆盖。
8.如权利要求7所述的芯片封装结构，其特征在于，所述覆盖层为防扩散层和浸润层的堆叠结构，所述防扩散层位于所述球下金属电极表面，所述浸润层位于所述防扩散层表面，所述防扩散层具有第三围裙结构，所述浸润层具有第四围裙结构。
9.如权利要求8所述的芯片封装结构，其特征在于，所述防扩散层的材料为镍。
10.如权利要求8所述的芯片封装结构，其特征在于，所述防扩散层的厚度为0.05μm至5μm。
11.如权利要求8所述的芯片封装结构，其特征在于，所述浸润层的材料为锡、金、银中的一种，或者所述浸润层的材料为含锡、金、或银的合金。
12.如权利要求8所述的芯片封装结构，其特征在于，所述浸润层的厚度为0.05μm至10μm。
13.如权利要求1所述的芯片封装结构，其特征在于，所述焊球的材料为锡或者锡合金。
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