CN102789994A - 侧面可浸润半导体器件 - Google Patents

侧面可浸润半导体器件 Download PDF

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CN102789994A
CN102789994A CN2011101624051A CN201110162405A CN102789994A CN 102789994 A CN102789994 A CN 102789994A CN 2011101624051 A CN2011101624051 A CN 2011101624051A CN 201110162405 A CN201110162405 A CN 201110162405A CN 102789994 A CN102789994 A CN 102789994A
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lead frame
semiconductor device
pin
coating
tin
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CN102789994B (zh
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王金全
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NXP USA Inc
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Freescale Semiconductor Inc
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Abstract

从引线框架或基板面板装配侧面可浸润半导体器件：用第一切割工具至少部分地底切引线框架或基板面板，以暴露引线框架的侧面；以及在将引线框架或基板面板切单为单个半导体器件之前，向暴露侧面施加锡或锡合金的涂敷。该方法包括在施加锡或锡合金涂敷之前，电互连与相邻半导体器件关联的引线框架侧面。引线框架侧面可以在丝线键合过程中被电气互连。

Description

侧面可浸润半导体器件
技术领域
本发明涉及半导体封装并且特别地涉及一种半导体器件，其具有焊料可浸润侧壁或侧面，以便于在使用表面安装技术(SMT)工艺将半导体器件安装在基板或电路板上时检查焊点。
背景技术
由于诸如QFN(四方扁平无引脚)封装的半导体器件采用划片刀切单的方式，使得暴露的引线框架侧面的表面与模制化合物平齐，从而焊料不容易攀附或“吸附”在封装的侧面或侧壁，这意味着QFN封装不是侧面可浸润的。
图1是装配QFN器件的常规装配工艺的流程图。该常规工艺包括晶圆安装和划片步骤10，随后是管芯键合步骤11以及丝线键合步骤12，在步骤11中，管芯键合到引线框架的标志处，在丝线键合步骤12中，管芯电连接到引线框架的引脚。引线框架通常由铜形成并可以镀有其他金属，如钯(PPF)或者银(Ag)。在丝线键合步骤中，利用键合丝线将管芯键合焊盘与引线框架焊盘连接。所述键合丝线可以是金、铜、铝等等。之后将该组件在步骤13中用模制化合物进行包封，随后是激光标记或去胶带(de-tape)步骤14。如果采用了镀银引线框架，则在步骤15中进行进一步的镀锡或锡合金(Sn)。最后，单个QFN器件通过切单步骤16形成。然后视检切单后的QFN器件并封装用于装运。
图2是诸如经由上述方法利用铜引线框架组装的常规QFN器件的部分截面图。由于暴露但是与QFN器件的侧壁平齐的未处理的铜表面20，使得QFN器件在其侧面是不可浸润的。
鉴于上述，需要一种QFN器件，其在侧壁或侧面是焊料可浸润的，以便于在使用SMT工艺将封装安装到诸如印刷电路板(PCB)时检查焊点。
附图说明
结合附图将更好地理解本发明的优选实施例的以下详细描述。通过示例的形式示出本发明，并且本发明不限于附图。在附图中，相似的附图标记指代相似的元件。应该认识到附图并非按比例的，并且为了容易理解而对本发明进行了简化。
图1是用于装配QFN半导体器件的常规工艺的流程图；
图2是由图1的工艺制造的常规QFN器件的局部扩大截面图；
图3是根据本发明的装配QFN半导体器件的工艺的流程图；
图4-7示出了由图3的工艺装配的QFN器件的放大截面图；以及
图8示出了由图3的工艺装配的QFN器件的放大截面图。
发明内容
根据本发明，提供一种用于制造侧面可浸润的半导体器件的工艺，包括：提供引线框架或基板面板；使用第一切割工具部分至少部分地底切引线框架或基板面板以暴露所述引线框架的侧面；以及在将引线框架或基板面板切单为单个半导体器件之前，向所述暴露的侧面施加锡或锡合金的涂敷。
该工艺可以包括在施加锡或锡合金涂敷之前，电气互连与相邻半导体器件关联的引线框架侧面。引线框架侧面可以通过丝线键合步骤进行电气互连。
该工艺可以包括将基板面板切单为单个半导体器件，其中切单步骤包括用第二切割工具切割基板面板来将面板分离为单个半导体器件。第二切割工具优选地比第一切割工具窄。锡涂敷可以通过电镀或电沉积来执行。
本发明还提供一种由上述方法装配的划片QFN半导体器件。
具体实施方式
现在参考图3，根据本发明的装配QFN半导体器件的工艺包括晶圆安装和划片步骤30，随后是管芯键合步骤31。步骤30和31相当于参考图1描述的常规工艺的步骤10和11，并且因此是本领域公知的。
步骤31之后是丝线键合步骤32，其与常规丝线键合步骤12的不同之处在于不但将管芯键合焊盘连接到引线框架的引脚，还采用连接丝线电气互连相邻QFN器件之间的引线框架引脚。
图4示出了丝线键合步骤32，其示出了连接丝线40、41将相邻管芯42、43上的管芯键合焊盘连接到引线框架44的引脚44a和44b。图4还示出电气互连引脚44a和44b的附加连接丝线45。引脚44a和44b将在切单步骤37之后形成相邻QFN器件的引脚，将在下面描述切单步骤37，其将引线框架面板分离为单个半导体器件。附加连接丝线45的目的在于在镀锡步骤36过程中将引脚44a和44b保持在相似的电势。
丝线键合步骤32之后是包封或模制步骤33，其中和现有技术一样，利用模制化合物46覆盖引线框架和管芯组件。在模制步骤33之后，执行激光标记或去胶带(de-tape)步骤34。步骤33和34相当于参考图1描述的常规工艺中的步骤13和14。
步骤34之后是第一划片步骤35，在该步骤中，附加连接丝线45下面的引线框架的材料(例如铜)被切除。连接丝线45和模制化合物46没有被分离，从而半导体面板具有用于处理的足够的硬度。划片步骤35是使得将面板切单为单个半导体器件的两步划片工艺中的第一步。划片步骤35通过第一切割工具来执行，以部分地底切半导体面板以形成如图5所示的部分底切50。部分底切50基本上将引线框架44分离为引脚或者引脚指44a和44b，其将形成相邻QFN器件的引脚。尽管底切50将引线框架44分离以形成两个引脚44a和44b时，其并没有切断连接丝线45，这用于确保引脚44a和44b在下面描述的之后的镀锡步骤36中保持电互连。
图6示出通过电镀或电沉积工艺进行的镀锡步骤36，其间，包括通过底切50暴露的引脚44a和44b的端部或边缘的引线框架44(例如铜)被涂敷有锡(Sn)或诸如用于非绿(non-green)器件的锡/铅合金的锡合金的层60。引脚44a和44b连接到电势源，从而在电镀或电沉积工艺中将形成阴极。电镀或电沉积工艺使得锡或锡合金的层60沉积在引线框架44的暴露的表面(例如铜)上。锡/锡合金的层60赋予了诸如SMT的焊接工艺中的可焊性或焊料可浸润性，并且保护引线框架44的暴露表面不被腐蚀。引线框架44在键合表面(背面是裸铜)通常预镀有银，因为通常预镀钯并随后镀锡或者锡合金是不经济的。
在镀锡步骤36之后，在步骤37中诸如利用划片将半导体面板切单为单个半导体器件(也参见图7)。在本发明的一个实施例中，切单步骤37采用比用于形成部分底切50的第一切割工具窄的第二切割工具(如，划片刀)来执行。采用更窄的切割工具的原因在于避免干扰引脚44a和44b的锡涂层60或再次暴露材料(例如铜)。第二切割工具需要精确的对准或者定位以避免干扰在镀锡步骤36中施加的涂层60。镀锡步骤36也可以采用化学方法，但是电镀或电沉积由于目前是更经济的从而是优选的。之后对切单的QFN器件进行检查并且封装以装运。
图8示出通过本发明的工艺制造的QFN器件，其采用SMT工艺安装到印刷电路板，可以清楚地看到锡涂层60之上的焊点80，这便于检查。即，由于步骤35和36中的第一切割和镀工艺，使得在焊接过程中，焊料将容易地流到引脚44a和44b的暴露的侧面上，并且因而在SMT后，能够通过视检容易地检查焊料连接。
从前述描述清楚地看出，本发明提供了一种制造侧面可浸润半导体器件的方法。虽然已经示出并且描述了本发明的优选实施例，但应该清楚的是，本发明不只限于这些实施例。在不偏离由权利要求限定的本发明的精神和范围的情况下，本领域技术人员可以进行各种修改、改变、变化、替换和等效。

Claims (10)

1.一种装配侧面可浸润半导体器件的方法，包括：
提供引线框架或基板面板；
采用第一切割工具至少部分地底切引线框架或基板面板，以暴露所述引线框架的侧面；以及
在将引线框架或基板面板切单为单个半导体器件前，向所述暴露的侧面施加锡或锡合金的涂敷。
2.根据权利要求1所述的方法，进一步包括：
在施加所述锡或锡合金的涂敷前，电气互连与相邻半导体器件关联的引线框架侧面。
3.根据权利要求2所述的方法，其中所述引线框架侧面在丝线键合步骤中由丝线电气互连。
4.根据权利要求1所述的方法，进一步包括将所述基板面板切单为所述单个半导体器件，其中所述切单包括用第二切割工具切割所述基板面板以将所述面板分离为所述单个半导体器件。
5.根据权利要求4所述的方法，其中所述第二切割工具比所述第一切割工具窄。
6.根据权利要求1所述的方法，其中通过电镀或者电沉积执行所述锡涂敷。
7.一种根据权利要求1所述的方法装配的QFN半导体器件。
8.一种侧面可浸润QFN半导体器件，包括：
包括多个引脚的引线框架；
被多个引脚围绕的半导体管芯，其中引脚电连接到管芯的管芯键合焊盘；
模制化合物，所述模制化合物包封管芯、引脚和电连接，其中引脚的末端沿着器件的侧壁暴露；以及
位于引脚的暴露部分上的锡或者锡合金的涂敷。
9.根据权利要求8所述的侧面可浸润半导体器件，其中，在装配中，在将所述器件与相邻器件分离之前，通过电镀或者电沉积将所述涂敷施加到引脚的暴露部分。
10.根据权利要求9所述的侧面可浸润半导体器件，其中，在装配中，电连接相邻器件的相邻引脚，使得当所述涂敷被施加到引脚时。
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