CN207781575U - 经封装的电子装置 - Google Patents
经封装的电子装置 Download PDFInfo
- Publication number
- CN207781575U CN207781575U CN201721632423.0U CN201721632423U CN207781575U CN 207781575 U CN207781575 U CN 207781575U CN 201721632423 U CN201721632423 U CN 201721632423U CN 207781575 U CN207781575 U CN 207781575U
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- electronic device
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- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/161—Disposition
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Abstract
本实用新型涉及一种经封装的电子装置。经封装的电子装置包括具有引线的基板。引线包括具有第一高度的面向外侧表面和具有小于第一高度的第二高度的面向内侧表面。电子装置电连接到引线。封装体囊封电子装置和引线的一部分。面向外侧表面经由封装体的侧表面露出,且面向内侧表面被封装体囊封。传导层设置在面向外侧表面上以提供具有增进可湿侧翼的经封装的电子装置。在一个实施例中,电子装置电连接到具有面向外侧表面之厚端子部分。在另一个实施例中,电子装置电连接到具有面向内侧表面的薄端子部分。本实用新型所要解决的技术问题是增进经封装半导体装置结构的电性能和可靠性。本实用新型所要达到的技术效果是提供改善的经封装半导体装置的结构。
Description
技术领域
本实用新型总体上涉及一种电子装置,并且更具体地涉及一种半导体封装、其结构以及形成所述半导体封装的方法。
背景技术
过去,诸如塑料四方平面封装无引脚(Plastic Quad Flat Pack No-lead, PQFN)或四方平面封装无引脚暴露衬垫(Quad Flat Pack No-Lead Exposed Pad,QFN-EP)封装的半导体封装尚未易于焊接视觉上暴露的端子,因为上述的封装设计在所述半导体封装的下侧具有用于焊料接点的端子。在单一化分割的后所暴露的这种半导体封装的边缘上的端子是由暴露的铜构成。由于铜的氧化,暴露的铜不易焊料湿润。因此,所述半导体封装已经有效地焊接至下一级组装件(例如印刷电路板)的视觉判断不能通过光学观察来执行。电气测试是确定焊接端子电连接的唯一方法。有一些应用程序对所有端子进行全面的电气测试是困难的或不完整的。因此,在诸如汽车应用的高可靠性应用中,希望目测检查端子焊料接点的完整性。正是为了这些目的,已经开发了为半导体封装的电镀焊料端子的可湿侧翼(wettable flank)以作为用于确定焊接操作有效性的视觉辅助。
可湿侧翼电镀是额外的制程步骤,其在半导体封装下侧端子上和暴露的边缘端子或侧翼上沉积具有正常传导材料厚度的可焊接传导材料(例如锡)。可湿侧翼电镀保护铜并且允许在端子的这个外部侧翼区域上发生焊接,使得可以进行光学检查来验证良好的焊料带接点(solder fillet joint),并且因此具有良好的电连接。尽管在可湿侧翼制程中已经有了些进展,但是仍需要改进传导基板结构以及形成这种结构的方法来进一步增进可湿侧翼。
因此,期望提供一种提供经封装的半导体装置,其具有改进的可湿表面以覆盖传导基板的侧表面或侧翼表面。所述结构和方法也可以容易地并入到制造流程中,适应多个晶粒互连方案,并且成本效益高。
实用新型内容
本实用新型所要解决的技术问题是增进经封装半导体装置结构的电性能和可靠性。
根据本实用新型的一个态样,一种经封装的电子装置包括具有引线的基板。所述引线包括具有第一高度的面向外侧表面和具有小于第一高度的第二高度的面向内侧表面。电子装置电连接到所述引线。所述封装体囊封所述电子装置和部分的所述引线。所述面向外侧表面经由所述封装体的侧表面暴露,并且所述面向内侧表面被所述封装体囊封。传导层设置在面向外侧表面上,以提供具有增进可湿侧翼的所述经封装的电子装置。在一个实施例中,所述电子装置电连接到具有面向外侧表面的厚端子部分。在另一个实施例中,所述电子装置电连接到具有面向内侧表面的薄端子部分。在另一个实施例中,所述引线具有厚度大于或等于约250微米的第一端子部分。
在一个实施例中,所述基板进一步包括衬垫;所述电子装置耦接到所述衬垫;引线下表面被暴露于所述封装体的外部;衬垫下表面被暴露于所述封装体的外部;以及所述传导层设置在经暴露的所述引线下表面和经暴露的所述衬垫下表面上。
在一个实施例中,所述引线进一步包括第一端子部分,其具有所述面向外侧表面;和第二端子部分,其具有所述面向内侧表面;所述第一端子部分比所述第二端子部分厚;以及所述第一端子部分具有大于225微米的厚度。
在一个实施例中,所述电子装置电耦接到所述第一端子部分的顶表面。
在一个实施例中,所述面向外侧表面包括面向外凹陷侧表面;所述面向内侧表面包括面向内凹陷侧表面;所述传导层设置在所述面向外凹陷侧表面的垂直部分上且设置在所述面向外凹陷侧表面的水平部分上;所述面向外侧表面的一部分设置为不存在所述传导层;所述基板进一步包括囊封所述引线的部分的模制层;所述电子装置以传导凸块覆晶地附接至所述引线;以及所述封装体提供用于所述电子装置的底部填充结构。
根据本实用新型的另一态样,一种经封装的电子装置包括基板。所述基板包括引线,所述引线包括具有第一厚度和面向外侧表面的第一端子部分,以及具有小于所述第一厚度的第二厚度和面向内侧表面的第二端子部分。所述基板进一步包括衬垫。所述第二端子部分接近所述衬垫,并且所述第一端子部分远离所述衬垫。所述电子装置电连接到所述引线。所述封装体囊封所述电子装置以及所述引线和所述衬垫的一部分,使得所述面向外侧表面经由所述封装体的侧表面暴露,并且所述面向内侧表面藉由所述封装体囊封。所述传导层设置在所述面向外侧表面上。
在一个实施例中,所述电子装置电耦接到所述第二端子部分的顶表面。
在一个实施例中,所述电子装置电耦接到所述第一端子部分的顶表面。
在一个实施例中,所述面向外侧表面包括面向外凹陷侧表面;所述面向内侧表面包括面向内凹陷侧表面;所述传导层设置在所述面向外凹陷侧表面的垂直部分上且设置在所述面向外凹陷侧表面的水平部分上;所述第一厚度是大于 225微米;并且所述面向外侧表面的一部分设置为不存在所述传导层。
在一个实施例中,所述电子装置以传导凸块覆晶地附接至所述引线。
本实用新型所要达到的技术效果是提供改善的经封装半导体装置的结构。
附图说明
图1示出了根据本案说明书的一实施例的经封装的电子装置的横截面视图;
图2示出了根据本案说明书附接到下一级组装件的图1的经封装的电子装置的横截面视图;
图3示出了根据本案说明书的一实施例的经封装的电子装置的横截面视图;
图4示出了根据本案说明书的一实施例的经封装的电子装置的局部截面视图;
图5是根据本案说明书的一实施例的制造经封装的电子装置的方法的流程图;
图6至28示出了根据本案说明书在各个制造阶段的经封装的电子装置的横截面视图;以及
图29示出了根据本案说明书的基板的可选实施例的局部截面视图。
为了图示的简单和清楚,附图中的元件不一定按比例绘制,并且不同附图中的相同元件符号表示相同的元件。此外,为了简化描述,省略了公知步骤和元件的描述和细节。如本文所使用的,术语“及/或”包括相关所列项目中的一个或多个的任何和所有组合。另外,这里使用的术语仅用于描述特定实施例的目的,而不意图限制本实用新型的揭露。如本文所使用的,除非上下文另有明确指示,否则单数形式也意图包括复数形式。将进一步理解的是,当在本案说明书中使用时,术语“包括”、“包括有”、“包含”及/或“含有”指定所述特征、数量、步骤、操作、元件及/或组件的存在,但不排除一个或多个其他特征、数量、步骤、操作、元件、组件及/或其组合的存在或添加。应该理解的是,尽管这里可以使用术语“第一”、“第二”等来描述各种构件、元件、区域、层及/或部分,但是这些构件、元件、区域、层及/或部分不应该受到这些术语限制。这些术语仅用于区分一个构件、元件、区域、层及/或部分。因此,例如,下面讨论的第一构件、第一元件、第一区域、第一层及/或第一部分可以被称为第二构件、第二元件、第二区域、第二层及/或第二部分而不偏离本案揭露的教导。对于“一个实施例”或“实施例”的引用意味着结合所述实施例描述的特定特征、结构或特性被包括在本实用新型的至少一个实施例中。因此,在整个说明书中出现的用语“在一个实施例中”或“在一实施例中”并不一定都指相同的实施例,而是在某些情况下可能是指相同的实施例。此外,在一个或多个实施例中,可以以任何适当的方式组合特定的特征、结构或特性,这对于本领域中具有通常技术人士是显而易见的。另外,术语“同时”意味着至少在起始动作的持续时间的某个部分内发生某个动作。用语“大约”、“近似”或“基本上”的使用意味着元件的数值预期接近一状态值或位置。然而,正如本领域所熟知的那样,总是存在一些小的变化,从而不能准确地说明数值或位置。除非另外指明,否则如本文所用,用语“上方”或“上”包括指定元件可以直接或间接物理接触的方位、位置或关系。应该进一步理解的是,在下文中适当地示出和描述的实施例可以具有多个实施例及/或可以在缺少本文未具体揭露的任何元件的情况下实施。
具体实施方式
以下配合图式及本实用新型的较佳实施例,进一步阐述本实用新型为达成预定实用新型目的所采取的技术手段。
除了其他特征之外,本说明书还包括了一种经封装的电子装置结构,其包含引线结构,相较于相关的装置,所述引线结构具有经曝露的侧表面或具有增加高度的侧翼表面。所述经曝露的侧表面提供增进可湿侧翼表面,当所述经封装电子装置附接到下一级组件(例如印刷电路板)时,所述的增进可湿侧翼表面改善接合的完整性。此外,增加的高度增强了对经封装的电子装置与下一级组装件之间形成的焊料接点的光学检测。与先前的方法相比,所述结构和方法通过促进更强的焊料接点提供改进的可靠性。所述结构和方法适用于经封装的半导体装置和其他电子装置,所述经封装的半导体装置和其他电子装置(包括但不限于功率半导体装置)具有配置用于随后沉积可焊材料的暴露的侧翼或侧表面。所述引线结构可以被设置为例如引线框基板、积层(build-up)基板或模制基板中的一部分。
图1示出了根据第一实施例的经封装的电子装置10(例如经封装的半导体装置10)的横截面视图。根据本实施例,经封装的半导体装置10包括衬垫11、标志11、晶粒附接衬垫11、晶粒衬垫11或支撑衬垫11以及靠近但与衬垫11 分离设置的引线12或端子12。在一个实施例中,使用附接材料17将电子装置 16、电子组件16或电子晶粒16(例如半导体装置16或半导体晶粒16)连接到或附接到衬垫11。在一些实施例中,半导体装置16是集成电路装置、功率半导体装置、光学装置、感测器装置或本领域技术人士已知的其它装置。举例来说,附接材料17可以是焊料膏、传导环氧树脂、传导粘着剂、传导膜、非传导环氧树脂、非传导粘着剂、非传导膜或本领域技术人士已知的其他合适的附接材料。在一些实施例中,非传导是指电绝缘,并且应理解的是这样的材料仍然可以是导热的。本领域技术人士将会理解,电子装置16以简化形式示出,并且还可以包括多个扩散区域、多个传导层和多个介电层。
根据本实施例,与相关装置相比,引线12包括独特的形状。如图1所示,一个或多个引线12包括厚端子部分120或厚引线部分120以及薄端子部分121 或薄引线部分121。换言之,与薄端子部分121相比,厚端子部分120在横截面仕途上具有更大的厚度或高度以提供搁架部分122或阶梯部分122。根据本实施例,厚端子部分120设置为远离衬垫11,并且薄端子部分121设置为接近衬垫 11。在一个实施例中,厚端子部分120横向地邻接薄端子部分121,而薄端子部分121插入在厚端子部分120和衬垫11之间。在本实施例中,厚端子部分120包括面向外侧表面126、传导侧表面126、面向外侧翼表面126或被构造成用于接纳传导层26的侧翼表面126。在一些实施例中,侧翼表面126通常如图1所示般向内侧向地凹陷,并且可以被描述为面向外凹陷侧表面126。在该实施例中,传导层26包括垂直部分260和水平部分261。水平部分261可以是至少部分弧形的,而不是直线或线性的,例如在使用蚀刻代替锯切以形成面向外侧翼表面 126。在多数实施例中,传导层26进一步设置成邻近引线12的面向底表面125 或下表面125。根据本实施例,厚端子部分120包括不包含传导层26的部分1200或面向外部分1200。根据本实施例,部分1200缺乏传导材料26,因为在传导层26形成之后,部分1200才被暴露或形成。
在一些实施例中,薄端子部分121包括在横截面视图中与面向外侧表面126 横向地相对的面向内侧表面128。在一些实施例中,面向内侧表面128通常如图 1所示般向内侧向地凹陷,并且可以被描述为面向内凹陷侧表面128。举例来说,面向内侧表面128和面向外侧表面126可以侧向地凹陷达约60微米。在其他实施例中,面向内侧表面128不凹陷。
根据本实施例,面向内侧表面128具有小于面向外侧表面126的高度131 或厚度131的高度129或厚度129。在一些实施例中,高度131大于约140微米和高度129小于约130微米。举例来说,高度131在约140微米至约200微米的范围内或更多。在相同或其他实施例中,高度131可以比高度129大至少大约10%或更多,例如比高度129大约50%。根据本实施例,厚端子部分120的总高度133或厚度133可以高达约250微米或更多,这与先前具有小于200微米的标准全厚度的引线的装置不同。与具有小于130微米高度的侧翼表面的现有装置相比,这种差异提供了具有更高的表面或更大的表面积的侧翼表面126。根据本实施例,较高的侧翼表面126提供用于将经封装的电子装置10附接到下一级组装件的更可焊接的表面区域,这改善了接合的完整性和可靠性。此外,这增进了对接合表面进行任何必要的视觉检查的能力。
经封装的电子装置10还包括附接到半导体装置16的主表面且进一步连接到一个或多个引线12的传导连接结构19。在一些实施例中,传导连接结构19 中的一个或多个或全部附接到薄端子部分121的顶表面123。在其他实施例中,传导连接结构19中的一个或多个或全部附接到厚端子部分120的顶表面124。在一些实施例中,优选的是将传导连接结构19附接到顶表面124,因为顶表面 124不是蚀刻表面,这可以为附接传导连接结构19提供更可靠的表面。在其它实施例中,优选的是将传导连接结构19附接到薄端子部分121的顶表面123以支撑更薄封装体。举例来说,传导连接结构19包括金或铜线或本领域技术人士已知的其他材料。可以理解的是,也可以使用其他传导连接结构(例如夹子、带状接合或本领域技术人士已知的其他结构)来代替导线,或除了导线之外也可以使用所述其他传导连接结构。另外,可以使用直接晶片附接方法,这将例如以图3来说明。
经封装的电子装置10还包括封装体36,所述封装体36覆盖或囊封传导连接结构19、半导体晶粒16、引线12的至少一部分以及衬垫11的至少一部分,然而在一些实施例中,会保持引线12的下或底表面125、引线12的侧翼表面 126以及暴露于经封装的电子装置10的外部的衬垫11的下表面110不被封装体 36覆盖或囊封,如图1中大致所示。在一些实施例中,封装体36可以是基于聚合物的复合材料,例如具有填料的环氧树脂、具有填料的环氧丙烯酸酯或具有适当填料的聚合物。封装体36包括非传导且环保的材料,其保护电子装置16免受外部元件和污染物的侵害。可以使用膏剂印刷(paste printing)、压缩成型、转移成型、包覆成型(over-molding)、液体囊封成型、真空层压、其他合适的涂布器或本领域技术人士已知的其它制程来形成封装体36。在一些实施例中,封装体36是环氧模塑化合物(expoxy mold compound,EMC),并且可以使用转移或注入成型技术。
根据本实施例,传导侧表面126或面向外侧翼表面126通过封装体36的侧表面360暴露,并进一步被传导层26覆盖,传导层26可以是可焊层26。举例来说,传导层26包含锡(Sn)并且可以使用电镀技术形成。在一些实施例中,传导层26进一步设置在引线12的下表面125上和衬垫11的下表面110上,如图1中大致所示。在其他实施例中,下表面110可以不被暴露于经封装的电子装置10的外部。
图2示出了附接到下一级组装件200的经封装的电子装置10的一部分的局部截面视图,例如具有靠近第一表面203设置的传导迹线201和202的印刷电路板200。根据本实施例,与相关装置相比,引线12的面向外侧翼表面126具有约55%以上的表面积用于传导层26,这提供了用于焊料附接材料24的可湿侧翼表面积大约55%的增加。根据本实施例,与相关装置相比,这提高了经组装组件的焊料接点强度和可靠性。此外,这增进了对接合表面进行任何必要的视觉检查的能力。
图3示出了根据另一个实施例的经封装的电子装置30(例如经封装的半导体装置30)的横截面视图。经封装的电子装置30与经封装的电子装置10相似,下文仅描述不同之处。在经封装的电子装置30中,电子装置16(例如半导体装置16)以覆晶配置直接附接到引线12和衬垫11。在一些实施例中,传导凸块 31被使用以将电子装置16附接到引线12和衬垫11。在一些实施例中,传导凸块31包括温度回焊焊料凸块及/或柱状凸块(例如,能具有对应的焊料尖端的铜柱状凸块)、热超声波或热压缩接合凸块(例如,金凸块)、粘着地接合凸块或本领域技术人士已知的其他凸块材料。在一些实施例中,首先将传导凸块施加到电子装置16上的接合衬垫32,尽管为晶圆形式。在一个实施例中,电子装置 16直接附接到薄端子部分121的顶表面123。在其它实施例中,电子装置16可直接附接到厚端子部分120的顶表面124。在一些实施例中,封装体36提供用于电子装置16的底部填充结构。在附加实施例中,可以在形成封装体36之前使用和形成个别(separate)的底部填充材料。
图4示出了根据另一实施例的经封装的电子装置40(例如经封装的半导体装置40)的局部截面视图。经封装的电子装置40与经封装的电子装置10相似,下文仅描述不同之处。在经封装的电子装置40中,提供了引线12的不同配置。在经封装的电子装置40中,引线12不具有薄端子部分121,而是仅由厚端子部分120组成。在所述构造中,引线12仍然包括面向外侧翼表面126和面向内凹陷侧表面128,所述面向内凹陷侧表面128在横截面视图中侧向地相对于面向外侧翼表面126。根据本实施例,如以经封装的电子装置10的描述,面向外侧翼表面126的高度131大于面向内凹陷侧表面128的高度129。在本实施例中,传导连接结构19附接到厚端子部分120的顶表面124,如图4中大致所示。
图5是根据一个实施例的制造经封装的电子装置(例如经封装的电子装置 10)的方法的流程图。所述方法包括提供具有厚和薄端子特征的传导基板的步骤510。举例来说,这可以包括图1中所示的厚端子部分120和薄端子部分121。换句话说,步骤510可以包括提供具有面向外凹陷侧表面和相对的面向内凹陷侧表面的传导基板,其中所述面向内凹陷侧表面的高度比所述面向外凹陷侧表面的高度小,如在图4所示的实施例中。所述方法包括将电子组件电连接到传导基板的步骤520。在一些实施例中,电子组件可以包括一个或多个电子装置 16,诸如半导体装置16。所述方法包括形成封装体以囊封所述电子组件和部分的传导基板从而提供经囊封的子组件的步骤530。在一些实施例中,所述封装体可以包括封装体36。
所述方法包括暴露含有厚端子特征的侧部的部分厚端子特征的步骤540。举例来说,所述侧部可以包括面向外侧表面126。步骤550包括在包含厚端子特征的暴露部分的部分的传导基板上形成可焊材料。在一些实施例中,所述可焊材料可以是传导层26,并且所述传导基板的暴露部分包括面向外侧表面126,并且还可以包括引线12的下表面125和衬垫11的下表面110中的一个或多个。步骤560包括单一化分割经囊封的子组件以提供具有增进可湿侧翼的厚端子特征的封装电子装置。根据本实施例,所述可湿侧翼包括面向外侧表面126,其中所述面向外侧表面126具有设置在其上的传导层26,与相关装置相比,这具有增加的高度并且因此具有增加的用于接合的表面积。
现在参考图6至13,其示出了在各个制造阶段的经封装的电子装置的横截面视图,图5的方法将根据第一实施例进一步描述。在本实施例中,图5的步骤510被示出在图6-9中。在图6中,提供了诸如传导基板61的基板61。在一些实施例中,基板61包括铜、铜合金、镍-铁-钴合金、铁-镍合金(例如合金42)、镀覆材料或本领域技术人士已知的其它材料的普通平板。根据本实施例,基板 61的厚度611大于用于相关装置的基板的厚度,从而为增进可湿侧翼表面提供具有增大的高度的面向外侧表面126。根据本实施例,与基板厚度小于200微米的相关装置相比,厚度611可以是225微米或更多,例如大约250微米。在一个实施例中,在基板61的主表面63上提供遮罩层62,并且在基板61的主表面 66上提供遮罩层64。遮罩层62包括开口67,其针对附加处理暴露部分的主表面63。在一些实施例中,遮罩层64没有开口。遮罩层62和64可以包括光敏材料,例如光阻材料、聚合物材料、介电材料或本领域技术人士已知的其他遮罩材料。
图7示出了在附加处理之后的基板61。在一个实施例中,基板61的部分被从主表面63经由开口67向内延伸地移除以提供凹陷表面630。在一些实施例中,使用加热喷雾蚀刻设备来形成凹陷表面630。在一些实施例中,遮罩层62和64 被移除,并且基板61被洗涤且干燥以用于进一步处理。
图8示出了遮罩层82和84设置在基板61的主表面63、630和66上之后的基板61。遮罩层82和84可以是光阻层,其被图案化以提供分别暴露主表面 66和凹陷表面630的部分的开口87和88,如图8中大致所示。根据本实施例,开口87比开口88宽。在随后的步骤中,然后去除基板61的暴露部分以提供引线12和衬垫11,如图9中大致所示。根据本实施例,引线12设置有厚端子部分120和薄端子部分121。此外,这步骤提供具有面向内凹陷表面128的薄端子部分121。
在一些实施例中,使用蚀刻制程来移除开口87和88中的基板61的暴露部分。然后可以移除遮罩层82和84,并且可以洗涤和干燥基板62以进行附加的处理。本领域技术人士将会理解,基板61的蚀刻特征的边缘可以不是直线,而是可以在横截面视图中为圆形或扇形。在其他实施例中,可以使用冲压技术、化学冲压技术、雷射切割技术、研磨技术或本领域技术人士已知的其他技术(包括与化学蚀刻的组合)来形成基板61的特征。尽管未示出,但是基板61的元件通常使用系杆和围绕框架结构而保持在一起以进行附加处理。根据本实施例,基板61被配置为传导引线框基板。
图10示出了在根据图5的步骤520将电子装置16(例如半导体器件16) 电连接到部分的基板61之后的基板61。在一个实施例中,电子装置16使用之前描述的附接材料17附接到衬垫11。然后可将传导连接结构19附接到电子装置16和引线12。如前所述,传导连接结构19可附接到厚端子部分120的顶表面124或附接到薄端子部分121的顶表面123,或者其组合可以被使用。可以理解的是,可以使用其他类型的传导连接结构19,例如以包括与导线接合的组合的任何组合的夹子及/或带状接合。另外,在步骤520中,电子装置16可以覆晶配置附接到衬垫11和引线12,如图3所示。
图11示出了在根据图5的步骤530形成封装体36之后的基板61。在一个实施例中,提供封装体36以囊封电子装置16、传导连接结构19、引线12的部分以及晶粒衬垫11的部分,以提供经囊封的子组件531。在本实施例中,晶粒衬垫11的下表面110和引线12的下表面125暴露于封装体36的外部。如前所述,封装体36可以是基于聚合物的复合材料,例如具有填料的环氧树脂、具有填料的环氧丙烯酸酯或具有适当填料的聚合物。封装体36包括非传导且环保的材料,其保护电子装置16免受外部元件和污染物的侵害。可以使用膏剂印刷、压缩成型、转移成型、包覆成型、液体囊封成型、真空层压、其他合适的涂布器或本领域技术人士已知的其它制程来形成封装体36。在一些实施例中,封装体36是EMC,并且可以使用转移成型或注入成型技术来形成。
图12示出了在根据图5的步骤540暴露包括面向外侧表面126的引线12 的厚端子部分120的一部分之后的经囊封的子组件531。在一个实施例中,使用部分锯切制程来从下表面125向内延伸以移除引线12的厚端子部分120的一部分。在一个实施例中,所述锯切制程并不全延伸穿过厚端子部分120,所以相邻单元中邻近的厚端子部分120保持物理连接,如图12所示藉由元件1201连接。这种物理连接有利于电镀制程的电通信,以在面向外侧表面126上形成传导层 26。在其他实施例中,使用其他移除技术来代替锯切制程或与锯切制程的组合。举例来说,可以使用蚀刻、研磨及/或雷射移除制程以及本领域技术人士已知的其他移除制程。
接下来,在一些实施例中,经囊封的子组件531可以附接到电镀设备的带指(beltfinger)部分,其将所述子组件悬挂在电镀溶液内以根据图5的步骤550 在基板61的暴露部分上形成传导层26,基板61的暴露部分包括厚端子部分120 的面向外侧表面126、引线12的下表面125和衬垫11的下表面110。根据本实施例,传导层26包括厚端子部分120上的垂直部分260和水平部分261。传导层26可以是可焊材料,例如锡、镉、金、银、钯、铑、铜、铜合金、其组合或本领域技术人士已知的类似材料。在一些实施例中,在电镀可焊材料之前可以使用镍阻挡层。在一些实施例中,传导层26可具有约2微米至约20微米的厚度。
图13示出了在根据图5的步骤560将所述子组件分离成各个经封装的电子装置10的单一化分割步骤之后的经囊封的子组件531。在一些实施例中,可以使用锯切制程以沿着单一化分割线561单一化分割各个装置,这形成了封装体 36的侧表面360和不存在传导层26的引线12的部分1200。这步骤提供各个经封装的电子装置10,每个经封装的电子装置具有面向外侧表面126,所述面向外侧表面126为凹陷并且设置有传导层126,传导层126被构造成提供增加的表面积或增进的可湿侧翼以用于将经封装的电子装置10附接到下一级的组装件,诸如图2所示的印刷电路板200。
现在参照图14-20,其示出了在各个制造阶段的经封装的电子装置的横截面视图,图5的方法将根据另一个实施例进一步描述。在本实施例中,图5中提供传导基板的步骤510被说明于图14-15。在图14中,传导图案411形成在载体400的第一表面418上。载体400还包括与第一表面418相对的第二表面419。在一个实施例中,载体400具有从大约3微米至300微米范围内的厚度。在一些实施例中,载体400可以由金属、硅、玻璃、环氧树脂或本领域技术人士已知的其它材料中的一种或多种形成。至少制备且清洁第一表面418以接收第一传导图案411。
在一个实施例中,传导图案411可以由包括铜(Cu)、金(Au)、银(Ag)、铝(Al)或本领域技术人士已知的其他材料的传导材料制成。另外,可以通过物理气相沉积(PVD)、化学气相沉积(CVD)、金属溅镀、金属蒸镀、电解或无电电镀或本领域技术人士已知的其他形成技术来形成传导图案411。在一些实施例中,传导图案411具有从约3微米到50微米范围内的厚度。在沉积之后,可以通过物理蚀刻或化学蚀刻或本领域技术人士已知的其他技术来图案化传导材料。在其他实施例中,遮罩层(未示出)可以首先沉积在第一主表面418上,并且随后沉积传导材料。取决于应用,可以在形成传导图案之后去除或不去除遮罩层。根据本实施例,传导图案411形成用于基板611的引线12和衬垫11 的一部分。在一些实施例中,传导图案411的部分可以被称为传导迹线411或迹线411。
接下来,参考图15,传导柱412设置在将作为基板611的引线12使用的传导图案411的部分上。传导柱412形成为从传导图案411向外或离开传导图案 411延伸且离开载体400的第一表面418延伸。在一个在实施例中,传导柱412 优选由具有良好电传导性、热传导性的材料如铜(Cu)、铜合金或本领域技术人士已知的类似材料形成。在一些实施例中,传导柱412具有从大约30微米到300 微米范围内的厚度。另外,可以使用PVD、CVD、金属溅镀、金属蒸镀、电解或无电电镀或本领域技术人士已知的其他形成技术来形成第一传导柱120。光遮罩和蚀刻技术可用于形成所需形状(例如长方体形状)的传导柱412。在一个实施例中,电解或无电电镀技术与设置在第一主表面418上的遮罩层一起使用,并且具有用于在传导图案411上的期望位置形成第一传导柱412的预选图案。根据本实施例,传导柱412具有比形成有传导柱412的传导图案411更窄的宽度。根据本实施例,传导柱412(以及设置在传导柱412下方的传导图案411的那些部分)被配置为提供引线12的厚端子部分120,以及传导图案411的邻近传导柱412(但不被传导柱412覆盖)的那些部分被配置成提供引线12的薄端子部分121。传导图案411的未设置有传导柱的那些部分被配置为提供衬垫11。根据本实施例,基板611被配置为积层基板。从此点开始的图16-20的描述中,引线12和衬垫11标号将与基板611一起使用。
图16示出了在根据图5的步骤520将电子装置16电连接到部分的基板611 之后的基板611。在一个实施例中,电子装置16使用之前描述的附接材料17附接到衬垫11。然后可将传导连接结构19附接到电子装置16和引线12。如前所述,传导连接结构19可附接到厚端子部分120的顶表面124或连接到薄端子部分121的顶表面123,或其组合可以被使用。应该理解的是,可以使用其他类型的传导连接结构19,例如包含与导线组合的任何组合的夹子及/或带状接合。另外,在步骤520中,电子装置16可以以覆晶配置附接到衬垫11和引线12,如图3所示。
图17示出了在根据图5的步骤530形成封装体36之后的基板611。在一个实施例中,提供封装体36以囊封电子装置1、传导连接结构19、引线12的一部分以及晶粒衬垫11的一部分,以提供经囊封的子组件531。在本实施例中,晶粒衬垫11的下表面110和引线12的下表面125暴露于与载体400的主表面 418邻接的封装体36的外部。封装体36可以是相同的材料并且可以使用与前述相同的制程形成,并且在此不再重复描述。然后可移除载体400以提供如图18 所示的经囊封的子组件631。
图19示出了在根据图5的步骤540暴露引线12的包含面向外侧表面126 的厚端子部分120的一部分之后的经囊封的子组件631。在一个实施例中,使用部分锯切制程来从下表面125向内延伸以移除引线12的厚端子部分120的一部分。在一个实施例中,所述锯切制程并不全延伸穿过厚端子部分120,使得相邻单元中的邻近的厚端子部分120保持物理连接,如图19所示藉由元件1201连接。这种物理连接有利于电镀制程的电连通,以在面向外侧表面126上形成传导层26。在其他实施例中,其他的移除技术可以使用以代替锯切制程或与锯切制程的组合。举例来说,可以使用蚀刻、研磨及/或雷射移除制程以及本领域技术人士已知的其他移除制程。
接下来,在一些实施例中,经囊封的子组件631可以附接到电镀设备的带指(beltfinger)部分,其将所述子组件悬挂在电镀溶液内以根据图5的步骤550 在基板61的暴露部分上形成传导层26,其中基板61的暴露部分包括厚端子部分120的面向外侧表面126、引线12的下表面125和衬垫11的下表面110。根据本实施例,传导层26包括在厚端子部分120上的垂直部分260和水平部分261。传导层26可以是与前述相同的材料,并且在此不再重复描述。
图20示出了在根据图5的步骤560将子组件分离成各个经封装的电子装置 101的单一化分割步骤之后的经囊封的子组件631。在一些实施例中,可以使用锯切制程以沿着单一化分割线661单一化分割各个装置,这形成封装体36的侧表面360和不存在传导层26的引线12的部分1200。所述步骤提供各个经封装的电子装置101,每个经封装的电子装置101具有面向外侧表面126,所述面向外侧表面126是凹陷的并且设置有传导层126,所述传导层126被配置成提供增加的表面积或增进的可湿侧翼,以用于将经封装的电子装置101附接到下一级组装件,例如图2所示的印刷电路板200。
现在参考图21-28,其示出了在各个制造阶段的经封装的电子装置的横截面视图,图5的方法将根据又一实施例来进一步描述。在本实施例中,图5中步骤510的提供传导基板被示出于图21-25。在图21中,在载体700的第一表面 718上形成传导图案711。载体700还包括与第一表面718相对的第二表面719。在一个实施例中,载体700具有从大约3微米至300微米范围内的厚度。在一些实施例中,载体700可以由金属、硅、玻璃、环氧树脂或本领域技术人士已知的其它材料中的一种或多种形成。至少制备且清洁第一表面718以接收第一传导图案711。
在一个实施例中,传导图案711可以由包括铜(Cu)、金(Au)、银(Ag)、铝(Al)或本领域技术人士已知的其他材料的传导材料制成。另外,传导图案 711可以通过PVD、CVD、金属溅镀、金属蒸镀、电解或无电电镀或本领域技术人士已知的其他形成技术来形成。在一些实施例中,传导图案711具有从约3 微米到50微米范围内的厚度。在沉积之后,可以通过物理蚀刻或化学蚀刻或本领域技术人士已知的其他技术来图案化传导材料。在其他实施例中,遮罩层(未示出)可以首先沉积在第一主表面718上,随后沉积传导材料。取决于应用,可以在形成传导图案之后去除或不去除遮罩层。根据本实施例,传导图案711 形成用于基板612的引线12和迹线714的部分。
接下来,参照图22,传导柱712设置在将用于基板612的引线12的传导图案711的一部分上。传导柱712形成为从传导图案711向外或离开传导图案711 延伸且离开载体700的第一表面718延伸。在一个实施例中,传导柱712优选由具有良好电传导性、热传导性的材料如铜(Cu)、铜合金或本领域技术人士已知的类似材料形成。在一个实施例中,传导柱712具有从大约30微米到300微米范围内的厚度。另外,可以使用PVD、CVD、金属溅镀、金属蒸镀、电解或无电电镀或本领域技术人士已知的其他形成技术来形成第一传导柱120。可使用光遮罩和蚀刻技术来以期望的形状(例如立方体形状)形成传导柱712。在一个实施例中,电解或无电电镀技术与设置在第一主表面718上方且具有预选图案的遮罩层一起使用,以用于在传导图案711上的期望位置形成第一传导柱712。根据本实施例,传导柱712具有比形成有传导柱712的传导图案711更窄的宽度。根据本实施例,传导柱712(以及设置在传导柱712下方的传导图案711的那部分)被配置为提供引线12的厚端子部分120,以及传导图案711的与传导柱712相邻但未被传导柱712覆盖的部分被配置为提供引线12的薄端子部分 121。根据本实施例,基板612被配置为模制基板。从这点开始的图23-28的描述中,引线12和迹线714标号将与基板612一起使用。
图23示出了附加处理之后的基板612。在一个实施例中,基板612用覆盖或囊封引线12、迹线714和载体700的暴露部分的模制层736囊封。模制层736 可以是基于聚合物的复合材料,例如具有填料的环氧树脂、具有填料的环氧丙烯酸酯或具有合适填料的聚合物。模制层736可以使用膏剂印刷、压缩成型、转移成型、包覆成型、液体囊封成型、真空层压、其它合适的涂布器或本领域技术人士已知的其它制程形成。在一些实施例中,模制层736是EMC,并且可以使用转移或注入成型技术来形成。在一个实施例中,模制层736被设置为在引线12的厚端子部分120的顶部上延伸。在随后的步骤中,模制层736的一部分可以被移除以暴露引线12的厚端子部分120的外表面1240,如图24所示。在一些实施例中,模制层736的部分可以使用研磨技术、蚀刻技术、其组合或本领域技术人士已知的其他移除技术来移除。在其他实施例中,模制层736可形成为具有在成型制程期间通过将上模板放置成邻近厚端子部分120而暴露的厚端子部分120的顶表面。另外,可以使用膜辅助成型。
图25说明在移除载体700以将迹线714和引线12暴露于外部以供进一步处理之后的基板612。根据本实施例,基板612被配置为模制基板并且已经从图 24翻转或旋转180度。
图26示出了在根据图5的步骤520将电子装置16电连接到基板612的部分之后的基板612。在一个实施例中,电子装置16使用传导凸块31以覆晶配置附接到迹线714和引线12。在一些实施例中,传导凸块31是温度回焊焊料凸块、热超声或热压缩接合凸块(例如金凸块)、黏着地接合凸块或本领域技术人士已知的其他凸块材料。在一些实施例中,首先将传导凸块施加到电子装置16上的接合衬垫(未示出),尽管为晶圆形式。在一个实施例中,电子装置16附接到引线12,使得电子晶粒16的外围边缘160延伸成仅与薄端子部分121重叠。在其他实施例中,电子装置16附接到引线12,使得电子晶粒16的外围边缘160 延伸以重叠厚端子部分120的至少一部分。在一些实施例中,封装体36提供用于电子装置16的底部填充结构。在另外的实施例中,可以使用个别的底部填充材料并且可以在形成封装体36之前形成。
图26进一步示出了在根据图5的步骤530形成封装体36之后的基板612。在一个实施例中,提供封装体36以囊封电子装置16、引线12的一部分和迹线 714的一部分,以提供经囊封的子组件731。封装体36可以是与先前描述的相同材料并且可以使用与先前描述的相同制程形成且在此不再重复描述。
图27示出了在根据图5的步骤540暴露引线12的包括面向外侧表面126 的厚端子部分120的一部分之后的经囊封的子组件731。在一个实施例中,使用部分锯切制程来从厚端子部分120的外表面1240向内延伸以移除引线12的一部分厚端子部分120。在一个实施例中,锯切制程没有完全延伸穿过厚端子部分 120,使得相邻单元中邻近的厚端子部分120保持物理连接,如图27所示藉由元件1201连接。这物理连接有利于电镀制程的电通信,以在面向外侧表面126 上形成传导层26。在另一个实施例中,移除制程完全分离了导线12的传导柱 712部分,但移除制程在接近下面传导图案711终止,使得传导图案711保持完整(即,传导图案711提供元件1201)以促进用于电镀制程的电通信以形成传导层26。在其他实施例中,使用其他移除技术来代替锯切制程或与锯切制程的组合。举例来说,可以使用蚀刻、研磨及/或雷射移除制程以及本领域技术人士已知的其他移除制程。
接下来,在一些实施例中,经囊封的子组件731可以附接到电镀设备的带指部分,其将所述子组件悬挂在电镀溶液内以根据图5的步骤550在厚端子部分120的暴露部分上形成传导层26。根据本实施例,传导层26包括在厚端子部分120上的垂直部分260和水平部分261。传导层26可以是与前述相同的材料,并且在此不再重复描述。
图28示出了在根据图5的步骤560将子组件分离成各个经封装的电子装置 102的单一化分割步骤之后的经囊封的子组件731。在一些实施例中,可以使用锯切制程沿着单一化分割线761单一化分割各个装置,这形成了封装体36的侧表面360和不存在传导层26的引线12的部分1200。所述步骤提供各个经封装的电子装置102,每个经封装的电子装置102都具有面向外侧表面126,所述面向外侧表面126是凹陷的并且设置有传导层126,所述传导层126被配置成提供增大的表面积或可湿侧翼,以用于将经封装的电子装置102附接到下一级组装件,例如图2所示的印刷电路板200。
图29示出了根据替代实施例的基板612的局部截面视图。在本实施例中,传导图案711在模制层736的主表面737下方凹陷。可以使用例如遮罩和蚀刻技术来形成这凹陷表面。将传导图案711设置为凹陷的一个优点是可以便于电子装置16与基板612对准。
鉴于以上全部内容,显而易见的是,已经公开了一种新颖结构和提供所述结构的方法,所述结构和方法包括引线结构,所述引线结构具有用于提供可湿侧翼的增进表面积的面向外侧表面。更特别地,与相关装置相比,面向外侧表面具有增加的用于接收可焊层的高度。在一些实施例中,引线结构包括具有面向外侧表面的厚端子部分和具有不存在可焊层的面向内侧表面的薄端子部分。电子装置可以电连接到厚端子部分或薄端子部分。引线结构可以被设置为例如引线框结构、积层基板结构或模制基板结构的一部分。暴露的侧表面提供增进的可湿侧翼表面,其在经封装的电子装置附接到下一层组装件(例如印刷电路板)时改善接合完整性。此外,增加的高度增强了对经封装的电子装置与下一级组装件之间形成的焊料接点的光学检测。与先前的方法相比,所述结构和方法通过促进更强的焊料接点提供改进的可靠性。
尽管以特定的优选实施例和示例实施例描述了本实用新型的主题,但是前述附图及其描述仅描绘了本主题的典型实施例,并且因此不被认为是对其范围的限制。显然地,许多替代方案和变化对于本领域技术人士将是显而易见的。举例来说,多个电子装置可以以并排配置、堆叠配置、其组合或本领域技术人士已知的其它配置附接到基板。另外,经封装的电子装置可以在少于封装体的所有侧上有引线。
如下面的申请专利范围所反映的,进步性态样可以少于单个前述公开实施例的所有特征。因此,在下文中表达的申请专利范围明确地并入本说明书的实施方案乙节中,每个权利要求本身作为本实用新型的个别实施例。此外,尽管本文描述的一些实施例包括其他实施例中的一些特征而不包括其他特征,但是如本领域技术人士会理解的是,不同实施例的特征的组合意味是落在本实用新型的范围内并且意味着形成不同的实施例。
Claims (10)
1.一种经封装的电子装置,其特征在于,包括:
基板,其具有引线,所述引线包括:
具有第一高度的面向外侧表面;和
具有第二高度的面向内侧表面,所述第二高度小于所述第一高度;
电子装置,其电耦接到所述引线;
封装体,其封装所述电子装置和部分的所述引线,其中:
所述面向外侧表面通过所述封装体的侧表面暴露;和
所述面向内侧表面被所述封装体囊封;以及
传导层,其设置在所述面向外侧表面上。
2.如权利要求1所述的经封装的电子装置,其特征在于,
所述基板进一步包括衬垫;
所述电子装置耦接至所述衬垫;
引线下表面被暴露于所述封装体的外部;
衬垫下表面被暴露于所述封装体的外部;以及
所述传导层设置在经暴露的所述引线下表面和经暴露的所述衬垫下表面上。
3.如权利要求1所述的经封装的电子装置,其特征在于,
所述引线进一步包括:
第一端子部分,其具有所述面向外侧表面;和
第二端子部分,其具有所述面向内侧表面;
所述第一端子部分比所述第二端子部分厚;以及
所述第一端子部分具有大于225微米的厚度。
4.如权利要求3所述的经封装的电子装置,其特征在于,
所述电子装置电耦接到所述第一端子部分的顶表面。
5.如权利要求1所述的经封装的电子装置,其特征在于,
所述面向外侧表面包括面向外凹陷侧表面;
所述面向内侧表面包括面向内凹陷侧表面;
所述传导层设置在所述面向外凹陷侧表面的垂直部分上且设置在所述面向外凹陷侧表面的水平部分上;
所述面向外侧表面的一部分设置为不存在所述传导层;
所述基板进一步包括囊封所述引线的部分的模制层;
所述电子装置以传导凸块覆晶地附接至所述引线;以及
所述封装体提供用于所述电子装置的底部填充结构。
6.如权利要求1所述的经封装的电子装置,其特征在于,
所述电子装置以传导凸块覆晶地附接至所述引线。
7.一种经封装的电子装置,包括:
基板,包括:
引线包括:
第一端子部分,其具有第一厚度和面向外侧表面;和
第二端子部分,其具有面向内侧表面且具有小于所述第一厚度的第二厚度;和
衬垫,其中所述第二端子部分接近所述衬垫,并且所述第一端子部分远离所述衬垫;
电子装置,其电耦接到所述引线;
封装体,其囊封所述电子装置以及部分的所述引线和所述衬垫,其中:
所述面向外侧表面通过所述封装体的侧表面暴露;和
所述面向内侧表面被所述封装体囊封;以及
传导层,其设置在所述面向外侧表面上。
8.如权利要求7所述的经封装的电子装置,其中:
所述电子装置是电耦接到所述第二端子部分的顶表面。
9.如权利要求7所述的经封装的电子装置,其中:
所述电子装置是电耦接到所述第一端子部分的顶表面。
10.如权利要求7所述的经封装的电子装置,其中:
所述面向外侧表面包括面向外凹陷侧表面;
所述面向内侧表面包括面向内凹陷侧表面;
所述传导层设置在所述面向外凹陷侧表面的垂直部分上且设置在所述面向外凹陷侧表面的水平部分上;
所述第一厚度大于225微米;以及
所述面向外侧表面的一部分设置为不存在所述传导层。
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