CN102623460A - 薄膜晶体管基板及其制造方法 - Google Patents
薄膜晶体管基板及其制造方法 Download PDFInfo
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- CN102623460A CN102623460A CN2011102045751A CN201110204575A CN102623460A CN 102623460 A CN102623460 A CN 102623460A CN 2011102045751 A CN2011102045751 A CN 2011102045751A CN 201110204575 A CN201110204575 A CN 201110204575A CN 102623460 A CN102623460 A CN 102623460A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0010348 | 2011-02-01 | ||
KR1020110010348A KR101876819B1 (ko) | 2011-02-01 | 2011-02-01 | 박막트랜지스터 기판 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102623460A true CN102623460A (zh) | 2012-08-01 |
CN102623460B CN102623460B (zh) | 2016-08-31 |
Family
ID=46563278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110204575.1A Expired - Fee Related CN102623460B (zh) | 2011-02-01 | 2011-07-13 | 薄膜晶体管基板及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8716710B2 (zh) |
KR (1) | KR101876819B1 (zh) |
CN (1) | CN102623460B (zh) |
TW (1) | TWI556450B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2014131189A1 (zh) * | 2013-02-26 | 2014-09-04 | 深圳市华星光电技术有限公司 | 低温多晶硅晶体管的制作方法 |
CN104282624A (zh) * | 2014-10-31 | 2015-01-14 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示装置 |
CN105161505A (zh) * | 2015-09-28 | 2015-12-16 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101335527B1 (ko) * | 2012-02-23 | 2013-12-02 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 및 그 제조 방법 |
CN102789971A (zh) * | 2012-07-31 | 2012-11-21 | 京东方科技集团股份有限公司 | 多晶硅tft、多晶硅阵列基板及其制备方法、显示装置 |
KR102090460B1 (ko) * | 2012-12-31 | 2020-03-18 | 엘지디스플레이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
CN103258827B (zh) * | 2013-04-28 | 2016-03-23 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
KR20140137948A (ko) * | 2013-05-24 | 2014-12-03 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 박막 트랜지스터 어레이 기판의 제조 방법 |
KR102169014B1 (ko) | 2013-10-14 | 2020-10-23 | 삼성디스플레이 주식회사 | 박막트랜지스터 어레이 기판 및 그 제조방법 |
KR102211863B1 (ko) * | 2013-10-15 | 2021-02-04 | 삼성디스플레이 주식회사 | 터치 패널 및 터치 패널의 제조 방법 |
CN104103646A (zh) * | 2014-06-30 | 2014-10-15 | 京东方科技集团股份有限公司 | 一种低温多晶硅薄膜晶体管阵列基板及其制备方法、显示装置 |
CN104218041B (zh) * | 2014-08-15 | 2017-12-08 | 京东方科技集团股份有限公司 | 阵列基板及制备方法和显示装置 |
KR20160081101A (ko) * | 2014-12-30 | 2016-07-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치의 제조 방법 및 상기 제조 방법에 의해 제조된 유기 발광 표시 장치 |
KR102339284B1 (ko) * | 2014-12-30 | 2021-12-15 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치의 제조 방법 및 상기 제조 방법에 의해 제조된 유기 발광 표시 장치 |
CN104576542B (zh) * | 2015-01-26 | 2018-12-18 | 合肥鑫晟光电科技有限公司 | 阵列基板及其制作方法、显示装置 |
JP6673731B2 (ja) | 2016-03-23 | 2020-03-25 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
CN105655359A (zh) * | 2016-03-31 | 2016-06-08 | 武汉华星光电技术有限公司 | Tft基板的制作方法 |
US10475847B2 (en) | 2016-04-28 | 2019-11-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having stress-neutralized film stack and method of fabricating same |
CN106373967B (zh) * | 2016-10-27 | 2017-12-22 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示装置 |
CN106601669A (zh) * | 2016-12-20 | 2017-04-26 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管阵列基板的制造方法 |
CN106935546B (zh) * | 2017-04-12 | 2019-09-06 | 京东方科技集团股份有限公司 | 阵列基板的制备方法、阵列基板、显示面板和显示装置 |
CN107579082B (zh) * | 2017-09-28 | 2020-05-05 | 京东方科技集团股份有限公司 | 一种阵列基板的制备方法 |
US10937646B1 (en) * | 2019-09-17 | 2021-03-02 | Applied Materials, Inc. | Method for isolating gates in transistors |
CN112635496A (zh) * | 2021-01-07 | 2021-04-09 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法、显示面板 |
Citations (9)
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CN1383214A (zh) * | 2001-04-26 | 2002-12-04 | 三星电子株式会社 | 液晶显示器的多晶硅薄膜晶体管及其制造方法 |
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Also Published As
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US8716710B2 (en) | 2014-05-06 |
US20140197415A1 (en) | 2014-07-17 |
CN102623460B (zh) | 2016-08-31 |
KR20120089151A (ko) | 2012-08-09 |
TW201234602A (en) | 2012-08-16 |
KR101876819B1 (ko) | 2018-08-10 |
TWI556450B (zh) | 2016-11-01 |
US9190431B2 (en) | 2015-11-17 |
US20120193624A1 (en) | 2012-08-02 |
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