CN104576542B - 阵列基板及其制作方法、显示装置 - Google Patents
阵列基板及其制作方法、显示装置 Download PDFInfo
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- CN104576542B CN104576542B CN201510038372.8A CN201510038372A CN104576542B CN 104576542 B CN104576542 B CN 104576542B CN 201510038372 A CN201510038372 A CN 201510038372A CN 104576542 B CN104576542 B CN 104576542B
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Abstract
本发明提供一种阵列基板及其制作方法、显示装置。本发明在覆盖导电图形或半导体图形的绝缘层上涂布光刻胶;曝光,至少形成光刻胶部分保留区域、光刻胶完全去除区域;刻蚀,至少部分地去除所述光刻胶完全去除区域对应的所述绝缘层,形成中间孔;再次刻蚀,形成所述第一过孔,并在所述中间孔处形成所述第二过孔,露出所述第一过孔和第二孔处的所述导电图形或所述半导体图形,其中所述第一过孔的深度小于所述第二过孔的深度。本发明能够在不增加阵列基板构图工艺次数的前提下,有效避免浅孔和深孔同时进行刻蚀时因为长时间刻蚀而导致浅孔处氧化物半导体层和栅绝缘层被刻穿使得信号线和栅线短路的情况。
Description
技术领域
本发明涉及显示技术领域,特别是指一种阵列基板及其制作方法、显示装置。
背景技术
Oxide TFT(氧化物薄膜晶体管)区别于传统的非晶硅半导体技术,使用金属氧化物(如IGZO)做为半导体层。Oxide TFT具有全透明、对光不敏感、增加开口率、提高亮度、降低功耗、电子迁移率高等优点,已经成为显示领域的新宠。
但金属氧化物半导体层对环境要求比较高,空气中的氧和水都会影响其特性,因此需要在金属氧化物半导体层上设置ESL(Etch Stop Layer)-刻蚀阻挡层。如图1所示,现有技术中,制作氧化物薄膜晶体管阵列基板时,首先在衬底基板1上形成栅电极2和公共电极线3;之后形成栅绝缘层4;在栅绝缘层4上形成氧化物半导体层6;在形成有氧化物半导体层6的衬底基板1上形成刻蚀阻挡层5;之后需要形成贯穿刻蚀阻挡层5的源电极过孔8和漏电极过孔9,贯穿刻蚀阻挡层5和栅绝缘层4的公共电极过孔10,以便源电极通过源电极过孔8与氧化物半导体层6连接,漏电极通过漏电极过孔9与氧化物半导体层6连接,公共电极通过公共电极过孔10与公共电极线3连接。现有技术中源电极过孔8、漏电极过孔9和公共电极过孔10为采用同一次刻蚀工艺形成,由于公共电极过孔10为深孔,需要贯穿刻蚀阻挡层5和栅绝缘层4,因此需要较长的刻蚀时间,而源电极过孔8、漏电极过孔9为浅孔,仅需要贯穿刻蚀阻挡层5,如图1所示,较长的刻蚀时间有可能导致源电极过孔8和漏电极过孔9处的氧化物半导体层6被刻穿,进而继续将源电极过孔8和漏电极过孔9处的栅绝缘层4刻掉导致源电极或漏电极与栅电极连接在一起,导致DGS(data line and gate line short,数据线和栅线短路)。
为了解决上述问题,现有技术一般是增加一次栅绝缘层的构图工艺,即先对栅绝缘层进行构图,在对应公共电极过孔10的位置形成贯穿栅绝缘层的过孔,之后再通过同一次刻蚀工艺形成贯穿刻蚀阻挡层的源电极过孔8、漏电极过孔9和公共电极过孔10。但这样就增加了阵列基板的构图工艺次数,提高了阵列基板的生产成本。
发明内容
本发明要解决的技术问题是提供一种阵列基板及其制作方法、显示装置,在不增加阵列基板构图工艺次数的前提下,有效避免浅孔和深孔同时进行刻蚀时,因为长时间刻蚀而导致浅孔处氧化物半导体层和栅绝缘层被刻穿,使得信号线和栅线短路的问题。
为解决上述技术问题,本发明的实施例提供技术方案如下:
一方面,提供一种阵列基板的制作方法,包括以下步骤:
在覆盖导电图形或半导体图形的绝缘层上涂布光刻胶;
曝光,至少形成光刻胶部分保留区域、光刻胶完全去除区域,其中所述光刻胶部分保留区域对应于形成第一过孔的区域,所述光刻胶完全去除区域对应于形成第二过孔的区域;
刻蚀,至少部分地去除所述光刻胶完全去除区域对应的所述绝缘层,形成中间孔;
再次刻蚀,以形成所述第一过孔,并在所述中间孔处形成所述第二过孔,露出所述第一过孔和第二孔处的所述导电图形或所述半导体图形,其中所述第一过孔的深度小于所述第二过孔的深度。
进一步地,在形成所述第一过孔和所述第二过孔之后,所述方法还包括:
去除所述绝缘层上覆盖的剩余的光刻胶。
进一步地,再次刻蚀之前还包括:
去除所述光刻胶部分保留区域的光刻胶。
进一步地,所述绝缘层包括栅绝缘层和刻蚀阻挡层,所述第一过孔贯穿所述刻蚀阻挡层,所述第二过孔贯穿所述刻蚀阻挡层和所述栅绝缘层。
进一步地,刻蚀形成所述中间孔包括:
去除所述光刻胶完全去除区域对应的全部所述刻蚀阻挡层和部分所述栅绝缘层以形成所述中间孔;
再次刻蚀,形成所述第一过孔,并在所述中间孔处形成所述第二过孔包括:
去除所述光刻胶部分保留区域所对应的全部的所述刻蚀阻挡层以形成所述第一过孔,和去除所述中间孔处对应的剩余的所述栅绝缘层以形成所述第二过孔。
进一步地,所述剩余的栅绝缘层的厚度与所述刻蚀阻挡层的厚度相等。
进一步地,在绝缘层上涂布光刻胶之前还包括:
提供一衬底基板;
在所述衬底基板上形成栅电极和公共电极线;
在形成有所述栅电极和公共电极线的衬底基板上形成所述栅绝缘层;
在所述栅绝缘层上形成氧化物半导体层;
在所述氧化物半导体层上形成所述刻蚀阻挡层。
进一步地,所去除所述绝缘层上覆盖的剩余的光刻胶之后还包括:
在所述衬底基板上形成源电极、漏电极和公共电极,所述导电图形为所述公共电极线,所述半导体图形为所述氧化物半导体层,所述源电极和漏电极分别通过各自对应的所述第一过孔与所述氧化物半导体层连接,所述公共电极通过所述第二过孔与所述公共电极线连接;
形成钝化层;
在所述钝化层上形成像素电极。
进一步地,所述曝光采用半色调掩膜板。
进一步地,所述半色调掩膜板包括对应于形成阵列基板上第一过孔的半透光区域和对应于形成阵列基板上第二过孔的完全透光区域,其中,半透光区域的曝光量小于完全透光区域的曝光量,所述曝光,至少形成光刻胶部分保留区域、光刻胶完全去除区域包括:
利用所述半色调掩膜板对绝缘层上涂布的光刻胶进行曝光,对应于所述完全透光区域形成所述光刻胶完全去除区域,对应于所述半透光区域形成所述光刻胶部分保留区域。
本发明实施例还提供了一种阵列基板,为采用上述的阵列基板的制作方法制作得到。
本发明实施例还提供了一种显示装置,包括上述的阵列基板。
本发明具有以下有益的技术效果:
上述方案中,在同一次构图工艺中,通过一次曝光,两次刻蚀来形成深孔和浅孔,从而能够在不增加阵列基板构图工艺次数的前提下,有效避免浅孔和深孔同时进行刻蚀时因为长时间刻蚀而导致浅孔处过刻的情况,对于氧化物薄膜晶体管阵列基板来说,能够避免浅孔处氧化物半导体层和栅绝缘层被刻穿导致信号线和栅线短路的问题。
附图说明
图1为现有技术进行干法刻蚀形成过孔的示意图;
图2为本发明实施例利用半色调掩膜板对刻蚀阻挡层上的光刻胶进行曝光的示意图;
图3为本发明实施例对光刻胶进行显影后的示意图;
图4为本发明实施例对刻蚀阻挡层进行刻蚀后的示意图;
图5为本发明实施例灰化掉光刻胶部分保留区域的光刻胶的示意图;
图6为本发明实施例对刻蚀阻挡层再次进行刻蚀后的示意图;
图7为本发明实施例去除刻蚀阻挡层上的光刻胶后的示意图;
图8为本发明实施例在衬底基板上形成源电极、漏电极、公共电极和钝化层后的示意图。
附图标记
1 衬底基板 2 栅电极 3 公共电极线 4 栅绝缘层
5 刻蚀阻挡层 6 氧化物半导体层 7 光刻胶 8 源电极过孔
9 漏电极过孔 10 公共电极过孔 11 掩膜板 12 源电极
13 漏电极 14 公共电极 15 钝化层
具体实施方式
本发明的实施例提供一种阵列基板及其制作方法、显示装置,能够在不增加阵列基板构图工艺次数的前提下,有效避免浅孔和深孔同时进行刻蚀时因为长时间刻蚀而导致浅孔处氧化物半导体层和栅绝缘层被刻穿使得信号线和栅线短路的情况。
实施例一
本实施例提供了一种阵列基板的制作方法,包括以下步骤:
在覆盖导电图形或半导体图形的绝缘层上涂布光刻胶;
曝光,至少形成光刻胶部分保留区域、光刻胶完全去除区域,其中光刻胶部分保留区域对应于形成第一过孔的区域,光刻胶完全去除区域对应于形成第二过孔的区域,具体地来说,光刻胶部分保留区域的光刻胶的厚度小于光刻胶完全保留区域的光刻胶的厚度,光刻胶部分保留区域的光刻胶的厚度大于光刻胶完全去除区域的光刻胶的厚度;
刻蚀,至少部分地去除光刻胶完全去除区域对应的绝缘层,形成中间孔;
再次刻蚀,形成所述第一过孔,并在所述中间孔处形成所述第二过孔,露出所述第一过孔和第二孔处的所述导电图形或所述半导体图形,其中所述第一过孔的深度小于所述第二过孔的深度。
至少部分地去除光刻胶完全去除区域对应的绝缘层,可以是去除全部的绝缘层,直接使得所形成的中间孔就是第二过孔,并露出导电图形或半导体图形;也可以是先去除部分绝缘层,形成中间孔,在再次刻蚀时,在形成第一过孔的过程中,也会对中间孔处的剩余绝缘层继续刻蚀,形成第二过孔,并露出第一过孔和第二过孔处的导电图形或半导体图形。通过这样的蚀刻过程,能够有效避免出现同时刻蚀深度不同的两个孔时,浅孔被过刻的问题。
进一步的,在形成所述第一过孔和所述第二过孔之后,所述方法还包括:去除所述绝缘层上覆盖的剩余的光刻胶。
进一步地,再次刻蚀之前还包括:
去除所述光刻胶部分保留区域的光刻胶。
具体地,可以采用灰化工艺去除光刻胶部分保留区域的光刻胶,灰化可以是使用的是氧气加六氟化硫的混合气体,其中氧气和六氟化硫的比例是30:1。
如果通过同一次刻蚀来同时形成深孔和浅孔,由于深孔较深,刻蚀时间长,势必会导致在浅孔处出现过刻的情况,而本实施例通过同一次构图工艺中的两次刻蚀来形成深孔(即第二过孔)和浅孔(即第一过孔),特别地,可以在第一次刻蚀时形成深孔的一部分,在第二次刻蚀时形成浅孔和深孔的剩余部分。通过本发明所提供的制造方法,能够在不增加阵列基板构图工艺次数的前提下,有效避免浅孔和深孔同时进行刻蚀时因为长时间刻蚀而导致浅孔处过刻的情况。本实施例中的阵列基板形成方法,适用于制造氧化物薄膜晶体管阵列基板来说,这样,在氧化物薄膜晶体管阵列基板的制造过程中,能够避免浅孔处氧化物半导体层和栅绝缘层被刻穿导致信号线和栅线短路的问题。
进一步地,所述绝缘层包括栅绝缘层和刻蚀阻挡层,所述第一过孔贯穿刻蚀阻挡层,用于连接源电极和氧化物半导体层、漏电极和氧化物半导体层,所述第二过孔贯穿刻蚀阻挡层和栅绝缘层,用于连接公共电极和公共电极线。一个具体的实施例中,在氧化物薄膜晶体管阵列基板的制造过程中,蚀刻形成第一过孔,裸露出的是所述氧化物半导体层,蚀刻形成第二过孔,裸露出的是所述公共电极线。
进一步地,刻蚀形成所述中间孔包括:
去除所述光刻胶完全去除区域对应的全部所述刻蚀阻挡层和部分所述栅绝缘层以形成所述中间孔;
再次刻蚀,以形成所述第一过孔,并在所述中间孔处形成所述第二过孔包括:
去除所述光刻胶部分保留区域所对应的全部的所述刻蚀阻挡层以形成所述第一过孔,和去除所述中间孔处对应的剩余的所述栅绝缘层以形成所述第二过孔。
优选地,所述剩余栅绝缘层的厚度与所述刻蚀阻挡层的厚度相等,一般来说,栅绝缘层与刻蚀阻挡层可以采用相同的材料,剩余栅绝缘层的厚度与刻蚀阻挡层的厚度相等,这样在再次进行刻蚀时,可以保证在刻蚀掉剩余栅绝缘层的同时刻蚀阻挡层也刚好能够被完全刻蚀掉,不会出现刻蚀不完全或者过刻的情况。
进一步地,在绝缘层上涂布光刻胶之前还包括:
提供一衬底基板;
在所述衬底基板上形成栅电极和公共电极线;
在形成有所述栅电极和公共电极线的衬底基板上形成所述栅绝缘层;
在所述栅绝缘层上形成氧化物半导体层;
在所述氧化物半导体层上形成所述刻蚀阻挡层。
进一步地,所述去除所述绝缘层上覆盖的剩余的光刻胶之后还包括:
在所述衬底基板上形成源电极、漏电极和公共电极,其中,所述导电图形为所述公共电极线,所述半导体图形为所述氧化物半导体层,所述源电极和漏电极分别通过各自对应的所述第一过孔与所述氧化物半导体层连接,所述公共电极通过所述第二过孔与所述公共电极线连接;
形成钝化层;
在所述钝化层上形成像素电极。
具体地,所述曝光采用半色调掩膜板。
所述半色调掩膜板包括对应于形成阵列基板上第一过孔的半透光区域和对应于形成阵列基板上第二过孔的完全透光区域,其中,半透光区域的曝光量小于完全透光区域的曝光量,所述曝光,至少形成光刻胶部分保留区域、光刻胶完全去除区域包括:
利用所述半色调掩膜板对绝缘层上涂布的光刻胶进行曝光,对应于所述完全透光区域形成所述光刻胶完全去除区域,对应于所述半透光区域形成所述光刻胶部分保留区域。
实施例二
下面以阵列基板为氧化物薄膜晶体管阵列基板为例,结合附图对本实施例的阵列基板的制作方法进行详细介绍。显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
需要说明的是:本发明实施例的“上”“下”“内”“外”只是参考附图对本发明实施例进行说明,不作为限定用语。
本实施例的制造方法包括以下步骤:
步骤e、如图2所示,在形成有栅绝缘层4和刻蚀阻挡层5的衬底基板1上涂布光刻胶7,利用掩膜板11对光刻胶进行曝光,掩膜板11包括对应阵列基板上源电极过孔和漏电极过孔的半透光区域和对应阵列基板上公共电极过孔的完全透光区域,其中,源电极过孔、漏电极过孔与公共电极过孔为采用同一次构图工艺形成且源电极过孔、漏电极过孔的深度小于公共电极过孔的深度;
掩膜板11为半色调掩膜板,半色调掩膜板包括对应于形成阵列基板上第一过孔的半透光区域和对应于形成阵列基板上第二过孔的完全透光区域,其中,半透光区域的曝光量小于完全透光区域的曝光量。
步骤f、如图3所示,显影后形成对应源电极过孔、漏电极过孔的光刻胶部分保留区域、对应公共电极过孔的光刻胶未保留区域(亦即光刻胶完全去除区域)和对应其他区域的光刻胶保留区域;
步骤g、如图4所示,进行刻蚀,去除对应于公共电极过孔的光刻胶未保留区域处的全部刻蚀阻挡层5和部分的栅绝缘层4形成一中间孔。本步骤中进行的刻蚀为干法刻蚀,进一步地,本步骤中,也可以去除全部的刻蚀阻挡层和全部的栅绝缘层4,裸露出公共电极线3;
步骤h、如图5所示,灰化掉对应于源电极过孔和漏电极过孔处的光刻胶部分保留区域的光刻胶;
具体地,灰化可以是使用的是氧气加六氟化硫的混合气体,其中氧气和六氟化硫的比例是30:1。
步骤i、如图6所示,再次进行刻蚀,去除对应于源电极过孔和漏电极过孔的,灰化后的光刻胶部分保留区域所对应的全部刻蚀阻挡层5,和对应于公共电极过孔的区域(亦即中间孔处)的剩余栅绝缘层4,裸露出源电极过孔和漏电极过孔处的氧化物半导体层6和公共电极过孔处的公共电极线3,形成源电极过孔8、漏电极过孔9和公共电极过孔10。其中,本步骤中进行的刻蚀可以是干法刻蚀。如果步骤g中的刻蚀已经去除对应于公共电极过孔的区域的全部栅绝缘层,那么本步骤中的刻蚀不必再去除对应于公共电极过孔的区域的剩余的栅绝缘层,所形成的中间孔就是公共电极过孔10。由于本步骤采取的是干法刻蚀,因此并不会对由栅金属层构成的公共电极线3造成影响。
其中,栅绝缘层与刻蚀阻挡层可以采用相同的材料,优选地,剩余栅绝缘层的厚度与刻蚀阻挡层的厚度相等,这样在再次进行刻蚀时,可以保证在刻蚀掉剩余栅绝缘层的同时刻蚀阻挡层也刚好能够被完全刻蚀掉,不会出现刻蚀不完全或者过刻的情况。
步骤j、如图7所示,去除剩余的光刻胶。
进一步地,步骤e之前还包括:
步骤a、提供一衬底基板1,在衬底基板1上形成栅电极2和公共电极线3的图形;
其中,衬底基板1可为玻璃基板或石英基板。具体地,可以采用溅射或热蒸发的方法在衬底基板1上沉积厚度约为的栅金属层,栅金属层可以是Cu,Al,Ag,Mo,Cr,Nd,Ni,Mn,Ti,Ta,W等金属以及这些金属的合金,栅金属层可以为单层结构或者多层结构,多层结构比如Cu\Mo,Ti\Cu\Ti,Mo\Al\Mo等。在栅金属层上涂覆一层光刻胶,采用掩膜板对光刻胶进行曝光,使光刻胶形成光刻胶未保留区域和光刻胶保留区域,其中,光刻胶保留区域对应于栅电极2和公共电极线3的图形所在区域,光刻胶未保留区域对应于上述图形以外的区域;进行显影处理,光刻胶未保留区域的光刻胶被完全去除,光刻胶保留区域的光刻胶厚度保持不变;通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的栅金属薄膜,剥离剩余的光刻胶,形成栅电极2和公共电极线3的图形。
步骤b、在完成步骤a的衬底基板1上形成栅绝缘层4;
具体地,可以采用等离子体增强化学气相沉积(PECVD)方法在完成步骤a的基板上沉积厚度为的栅绝缘层4,栅绝缘层4可以选用氧化物、氮化物或者氧氮化合物,对应的反应气体是SiH4、NH3、N2或SiH2Cl2、NH3、N2。
步骤c、在完成步骤b的衬底基板1上形成氧化物半导体层6的图形;
具体地,在经过步骤b的衬底基板1上沉积氧化物半导体层6,氧化物半导体层可以采用IGZO、ITZO、或ZnON,氧化物半导体层的厚度为 在氧化物半导体层6上涂覆一层光刻胶,采用掩膜板对光刻胶进行曝光,使光刻胶形成光刻胶未保留区域和光刻胶保留区域,其中,光刻胶保留区域对应于氧化物半导体层6的图形所在区域,光刻胶未保留区域对应于上述图形以外的区域;进行显影处理,光刻胶未保留区域的光刻胶被完全去除,光刻胶保留区域的光刻胶厚度保持不变;通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的栅金属薄膜,剥离剩余的光刻胶,形成氧化物半导体层6的图形。
步骤d、在完成步骤c的衬底基板1上形成刻蚀阻挡层5。
具体地,可以采用等离子体增强化学气相沉积(PECVD)方法在完成步骤c的基板上沉积厚度为的刻蚀阻挡层5,刻蚀阻挡层5可以选用氧化物、氮化物或者氧氮化合物,对应的反应气体是SiH4、NH3、N2或SiH2Cl2、NH3、N2。
进一步地,步骤j之后还包括:
步骤k、在完成步骤j的衬底基板1上形成源电极12、漏电极13和公共电极14;
具体地,可以采用磁控溅射、热蒸发或其它成膜方法沉积一层厚度约为的源漏金属层,源漏金属层可以是Cu,Al,Ag,Mo,Cr,Nd,Ni,Mn,Ti,Ta,W等金属以及这些金属的合金。源漏金属层可以是单层结构或者多层结构,多层结构比如Cu\Mo,Ti\Cu\Ti,Mo\Al\Mo等。在源漏金属层上涂覆一层光刻胶,采用掩膜板对光刻胶进行曝光,使光刻胶形成光刻胶未保留区域和光刻胶保留区域,其中,光刻胶保留区域对应于源电极12、漏电极13和公共电极14的图形所在区域,光刻胶未保留区域对应于上述图形以外的区域;进行显影处理,光刻胶未保留区域的光刻胶被完全去除,光刻胶保留区域的光刻胶厚度保持不变;通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的源漏金属层,剥离剩余的光刻胶,形成源电极12、漏电极13和公共电极14,源电极12通过源电极过孔8与氧化物半导体层6连接,漏电极13通过漏电极过孔9与氧化物半导体层6连接,公共电极14通过公共电极过孔10与公共电极线3连接。
步骤l,如图8所示,在完成步骤k的衬底基板1上形成包括有钝化层过孔的钝化层15;
具体地,可以在完成步骤k的衬底基板1上采用磁控溅射、热蒸发、PECVD或其它成膜方法沉积厚度为的钝化层15,钝化层15可以选用氧化物、氮化物或者氧氮化合物,具体地,钝化层材料可以是SiNx,SiOx或Si(ON)x,钝化层15还可以使用Al2O3。钝化层可以是单层结构,也可以是采用氮化硅和氧化硅构成的两层结构。其中,硅的氧化物对应的反应气体可以为SiH4,N2O;氮化物或者氧氮化合物对应气体可以是SiH4,NH3,N2或SiH2Cl2,NH3,N2。通过一次构图工艺形成包括有钝化层过孔的钝化层15的图形,具体地,可以在钝化层15上涂覆一层厚度约为的有机树脂,有机树脂可以是苯并环丁烯(BCB),也可以是其他的有机感光材料,曝光显影后,通过一次刻蚀工艺形成有钝化层过孔的钝化层15的图形。
步骤m、在完成步骤l的衬底基板1上形成像素电极的图形。
具体地,在完成步骤l的衬底基板1上通过溅射或热蒸发的方法沉积厚度约为的透明导电层,透明导电层可以是ITO、IZO或者其他的透明金属氧化物,在透明导电层上涂覆一层光刻胶,采用掩膜板对光刻胶进行曝光,使光刻胶形成光刻胶未保留区域和光刻胶保留区域,其中,光刻胶保留区域对应于像素电极的图形所在区域,光刻胶未保留区域对应于上述图形以外的区域;进行显影处理,光刻胶未保留区域的光刻胶被完全去除,光刻胶保留区域的光刻胶厚度保持不变;通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的透明导电层薄膜,剥离剩余的光刻胶,形成像素电极的图形,像素电极通过钝化层过孔与漏电极连接。
本实施例通过同一次构图工艺中的两次刻蚀来形成深孔(即公共电极过孔)和浅孔(即源电极过孔和漏电极过孔),从而能够在不增加阵列基板构图工艺次数的前提下,有效避免浅孔和深孔同时进行刻蚀时因为长时间刻蚀而导致浅孔处过刻的情况,对于氧化物薄膜晶体管阵列基板来说,能够避免浅孔处氧化物半导体层和栅绝缘层被刻穿导致信号线和栅线短路的问题。
实施例三
本实施例还提供了一种阵列基板,为采用上述的阵列基板的制作方法制作得到。
实施例四
本实施例还提供了一种显示装置,包括上述的阵列基板。所述显示装置可以为:液晶面板、液晶电视、液晶显示器、数码相框、手机、平板电脑、导航仪、电子纸等任何具有显示功能的产品或部件。
以上所述是本发明的优选实施方式,应当指明,优选实施方式不是限定的,本领域技术人员所知的明显变形或者等同替代方式都在本发明的保护范围内。
Claims (10)
1.一种阵列基板的制作方法,其特征在于,包括以下步骤:
在覆盖导电图形或半导体图形的绝缘层上涂布光刻胶;
曝光,至少形成光刻胶部分保留区域、光刻胶完全去除区域,其中所述光刻胶部分保留区域对应于形成第一过孔的区域,所述光刻胶完全去除区域对应于形成第二过孔的区域;
刻蚀,至少部分地去除所述光刻胶完全去除区域对应的所述绝缘层,形成中间孔;
再次刻蚀,形成所述第一过孔,并在所述中间孔处形成所述第二过孔,露出所述第一过孔和第二孔处的所述导电图形或所述半导体图形,其中所述第一过孔的深度小于所述第二过孔的深度;
所述绝缘层包括栅绝缘层和刻蚀阻挡层,所述第一过孔贯穿所述刻蚀阻挡层,所述第二过孔贯穿所述刻蚀阻挡层和所述栅绝缘层,刻蚀形成所述中间孔包括:
去除所述光刻胶完全去除区域对应的全部所述刻蚀阻挡层和部分所述栅绝缘层以形成所述中间孔;
再次刻蚀,形成所述第一过孔,并在所述中间孔处形成所述第二过孔包括:
去除所述光刻胶部分保留区域所对应的全部的所述刻蚀阻挡层以形成所述第一过孔,和去除所述中间孔处对应的剩余的所述栅绝缘层以形成所述第二过孔。
2.根据权利要求1所述的阵列基板的制作方法,其特征在于,在形成所述第一过孔和所述第二过孔之后,所述方法还包括:
去除所述绝缘层上覆盖的剩余的光刻胶。
3.根据权利要求1所述的阵列基板的制作方法,其特征在于,再次刻蚀之前还包括:
去除所述光刻胶部分保留区域的光刻胶。
4.根据权利要求1所述的阵列基板的制作方法,其特征在于,所述剩余的栅绝缘层的厚度与所述刻蚀阻挡层的厚度相等。
5.根据权利要求1所述的阵列基板的制作方法,其特征在于,在所述绝缘层上涂布光刻胶之前还包括:
提供一衬底基板;
在所述衬底基板上形成栅电极和公共电极线;
在形成有所述栅电极和公共电极线的衬底基板上形成所述栅绝缘层;
在所述栅绝缘层上形成氧化物半导体层;
在所述氧化物半导体层上形成所述刻蚀阻挡层。
6.根据权利要求5所述的阵列基板的制作方法,其特征在于,所述去除所述绝缘层上覆盖的剩余的光刻胶之后还包括:
在所述衬底基板上形成源电极、漏电极和公共电极,所述导电图形为所述公共电极线,所述半导体图形为所述氧化物半导体层,所述源电极和漏电极分别通过各自对应的所述第一过孔与所述氧化物半导体层连接,所述公共电极通过所述第二过孔与所述公共电极线连接;
形成钝化层;
在所述钝化层上形成像素电极。
7.根据权利要求1所述的阵列基板的制作方法,其特征在于,所述曝光采用半色调掩膜板。
8.根据权利要求7所述的阵列基板的制作方法,其特征在于,所述半色调掩膜板包括对应于形成所述阵列基板上所述第一过孔的半透光区域和对应于形成所述阵列基板上所述第二过孔的完全透光区域,其中,半透光区域的曝光量小于完全透光区域的曝光量;
所述曝光,至少形成光刻胶部分保留区域、光刻胶完全去除区域包括:
利用所述半色调掩膜板对绝缘层上涂布的光刻胶进行曝光,对应于所述完全透光区域形成所述光刻胶完全去除区域,对应于所述半透光区域形成所述光刻胶部分保留区域。
9.一种阵列基板,其特征在于,为采用如权利要求1-8中任一项所述的阵列基板的制作方法制作得到。
10.一种显示装置,其特征在于,包括如权利要求9所述的阵列基板。
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