CN101800229B - 显示装置 - Google Patents
显示装置 Download PDFInfo
- Publication number
- CN101800229B CN101800229B CN2010101257503A CN201010125750A CN101800229B CN 101800229 B CN101800229 B CN 101800229B CN 2010101257503 A CN2010101257503 A CN 2010101257503A CN 201010125750 A CN201010125750 A CN 201010125750A CN 101800229 B CN101800229 B CN 101800229B
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- 239000010408 film Substances 0.000 claims abstract description 213
- 239000010409 thin film Substances 0.000 claims abstract description 168
- 239000011229 interlayer Substances 0.000 claims abstract description 117
- 239000000758 substrate Substances 0.000 claims abstract description 54
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- 229910004444 SUB1 Inorganic materials 0.000 description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 238000001259 photo etching Methods 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
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- OSDXSOSJRPQCHJ-XVNBXDOJSA-N methyl 3-(3,4-dihydroxyphenyl)-3-[(E)-3-(3,4-dihydroxyphenyl)prop-2-enoyl]oxypropanoate Chemical compound C=1C=C(O)C(O)=CC=1C(CC(=O)OC)OC(=O)\C=C\C1=CC=C(O)C(O)=C1 OSDXSOSJRPQCHJ-XVNBXDOJSA-N 0.000 description 2
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
Abstract
Description
Claims (16)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-027189 | 2009-02-09 | ||
JP2009027189 | 2009-02-09 | ||
JP2009107252A JP2010206154A (ja) | 2009-02-09 | 2009-04-27 | 表示装置 |
JP2009-107252 | 2009-04-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101800229A CN101800229A (zh) | 2010-08-11 |
CN101800229B true CN101800229B (zh) | 2012-05-30 |
Family
ID=42154337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101257503A Active CN101800229B (zh) | 2009-02-09 | 2010-02-09 | 显示装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8309960B2 (zh) |
EP (1) | EP2216816B1 (zh) |
JP (1) | JP2010206154A (zh) |
KR (1) | KR101138624B1 (zh) |
CN (1) | CN101800229B (zh) |
TW (1) | TWI418038B (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011033911A1 (en) * | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9799773B2 (en) * | 2011-02-02 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and semiconductor device |
KR101333404B1 (ko) | 2011-03-11 | 2013-11-28 | 샤프 가부시키가이샤 | 박막 트랜지스터 및 그 제조 방법, 및 표시 장치 |
CN102651316B (zh) * | 2011-05-09 | 2014-08-13 | 京东方科技集团股份有限公司 | 过孔的刻蚀方法、阵列基板、液晶面板及显示设备 |
KR101925540B1 (ko) * | 2011-08-04 | 2019-02-28 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법 |
WO2013095651A1 (en) | 2011-12-23 | 2013-06-27 | Intel Corporation | Non-planar gate all-around device and method of fabrication thereof |
WO2013111725A1 (ja) * | 2012-01-26 | 2013-08-01 | シャープ株式会社 | 半導体装置およびその製造方法 |
KR101942489B1 (ko) * | 2012-10-17 | 2019-01-28 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 포함하는 유기 발광 표시 장치 |
KR102086422B1 (ko) * | 2013-03-28 | 2020-03-10 | 삼성디스플레이 주식회사 | 표시패널 및 이의 제조방법 |
CN104765893A (zh) * | 2014-01-06 | 2015-07-08 | 北京华大九天软件有限公司 | 一种生成截面图的方法 |
CN103824866A (zh) * | 2014-03-03 | 2014-05-28 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制备方法、液晶显示面板 |
TWI560857B (en) * | 2015-02-17 | 2016-12-01 | Innolux Corp | Thin film transistor substrate and display panel comprising the same |
CN105990332B (zh) * | 2015-02-17 | 2019-11-05 | 群创光电股份有限公司 | 薄膜晶体管基板及其显示面板 |
EP3321393A4 (en) * | 2015-08-28 | 2019-01-16 | Nippon Steel & Sumitomo Metal Corporation | SURFACE TREATED STEEL PLATE FOR FUEL TANK |
JP2017102333A (ja) * | 2015-12-03 | 2017-06-08 | 凸版印刷株式会社 | 表示装置および表示装置の製造方法 |
US11024656B2 (en) * | 2016-06-28 | 2021-06-01 | Sharp Kabushiki Kaisha | Active matrix substrate, optical shutter substrate, display device, and method for manufacturing active matrix substrate |
WO2019012630A1 (ja) * | 2017-07-12 | 2019-01-17 | 堺ディスプレイプロダクト株式会社 | 半導体装置およびその製造方法 |
JP2019102674A (ja) * | 2017-12-05 | 2019-06-24 | 株式会社ジャパンディスプレイ | 半導体素子、半導体装置、およびこれらの作製方法 |
CN113937091A (zh) * | 2018-02-28 | 2022-01-14 | 京瓷株式会社 | 显示装置、玻璃基板及玻璃基板的制造方法 |
CN110931426B (zh) * | 2019-11-27 | 2022-03-08 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板的制作方法 |
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US4736229A (en) * | 1983-05-11 | 1988-04-05 | Alphasil Incorporated | Method of manufacturing flat panel backplanes, display transistors and displays made thereby |
JP2653092B2 (ja) * | 1988-03-25 | 1997-09-10 | セイコーエプソン株式会社 | 相補型薄膜トランジスタ及びその製造方法 |
JPH01300567A (ja) * | 1988-05-30 | 1989-12-05 | Seikosha Co Ltd | 非晶質シリコン薄膜トランジスタおよびその製造方法 |
JPH0251128A (ja) * | 1988-08-12 | 1990-02-21 | Seikosha Co Ltd | シリコン薄膜トランジスタアレイの保持容量 |
US5474941A (en) * | 1990-12-28 | 1995-12-12 | Sharp Kabushiki Kaisha | Method for producing an active matrix substrate |
JPH0513439A (ja) * | 1991-07-03 | 1993-01-22 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
JP3173058B2 (ja) * | 1991-08-30 | 2001-06-04 | ソニー株式会社 | 半導体薄膜の形成方法 |
JP2953201B2 (ja) * | 1992-07-02 | 1999-09-27 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
JPH0637283A (ja) * | 1992-07-17 | 1994-02-10 | Sony Corp | 半導体記憶装置 |
US6265249B1 (en) * | 1994-03-01 | 2001-07-24 | Industrial Technology Research Institute | Method of manufacturing thin film transistors |
JP3221251B2 (ja) * | 1994-09-09 | 2001-10-22 | ソニー株式会社 | 非晶質シリコンの結晶化方法および薄膜トランジスタの製造方法 |
KR0145900B1 (ko) * | 1995-02-11 | 1998-09-15 | 김광호 | 박막 트랜지스터 액정디스플레이 소자 및 그 제조방법 |
JPH08236775A (ja) * | 1995-03-01 | 1996-09-13 | Toshiba Corp | 薄膜トランジスタおよびその製造方法 |
JP3931359B2 (ja) * | 1996-07-17 | 2007-06-13 | ソニー株式会社 | 半導体装置の製造方法 |
US5721164A (en) * | 1996-11-12 | 1998-02-24 | Industrial Technology Research Institute | Method of manufacturing thin film transistors |
JPH11186558A (ja) * | 1997-12-24 | 1999-07-09 | Sharp Corp | 薄膜トランジスタおよびその製造方法 |
US6444505B1 (en) * | 2000-10-04 | 2002-09-03 | Industrial Technology Research Institute | Thin film transistor (TFT) structure with planarized gate electrode |
JP4369109B2 (ja) * | 2001-11-14 | 2009-11-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2004165621A (ja) * | 2002-09-20 | 2004-06-10 | Seiko Epson Corp | 半導体装置、電気光学装置、電子機器、半導体装置の製造方法 |
JP4984369B2 (ja) * | 2002-12-10 | 2012-07-25 | 株式会社ジャパンディスプレイイースト | 画像表示装置及びその製造方法 |
KR101216688B1 (ko) * | 2005-05-02 | 2012-12-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치 |
KR20070071412A (ko) * | 2005-12-30 | 2007-07-04 | 삼성전자주식회사 | 스위칭 소자의 제조 방법 및 표시 기판 |
EP1981086A4 (en) * | 2006-01-30 | 2011-06-29 | Sharp Kk | THIN FILM TRANSISTOR AND ACTIVE MATRIX SUBSTRATE AND DISPLAY ARRANGEMENT WITH SUCH A THIN FILM TRANSISTOR |
JP4584332B2 (ja) * | 2006-02-24 | 2010-11-17 | シャープ株式会社 | アクティブマトリクス基板、表示装置、テレビジョン受像機 |
-
2009
- 2009-04-27 JP JP2009107252A patent/JP2010206154A/ja active Pending
-
2010
- 2010-02-05 EP EP10152785.1A patent/EP2216816B1/en active Active
- 2010-02-08 KR KR1020100011484A patent/KR101138624B1/ko active IP Right Grant
- 2010-02-08 TW TW099103716A patent/TWI418038B/zh active
- 2010-02-09 US US12/702,900 patent/US8309960B2/en active Active
- 2010-02-09 CN CN2010101257503A patent/CN101800229B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20100200858A1 (en) | 2010-08-12 |
TW201044594A (en) | 2010-12-16 |
KR101138624B1 (ko) | 2012-05-16 |
TWI418038B (zh) | 2013-12-01 |
EP2216816B1 (en) | 2017-12-27 |
CN101800229A (zh) | 2010-08-11 |
EP2216816A2 (en) | 2010-08-11 |
US8309960B2 (en) | 2012-11-13 |
EP2216816A3 (en) | 2011-09-28 |
JP2010206154A (ja) | 2010-09-16 |
KR20100091123A (ko) | 2010-08-18 |
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