CN102585765B - Cmp研磨剂以及衬底的研磨方法 - Google Patents

Cmp研磨剂以及衬底的研磨方法 Download PDF

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Publication number
CN102585765B
CN102585765B CN201110430594.6A CN201110430594A CN102585765B CN 102585765 B CN102585765 B CN 102585765B CN 201110430594 A CN201110430594 A CN 201110430594A CN 102585765 B CN102585765 B CN 102585765B
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China
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water
azobis
weight
salt
acid
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Expired - Lifetime
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CN201110430594.6A
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English (en)
Chinese (zh)
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CN102585765A (zh
Inventor
深泽正人
小山直之
仓田靖
芳贺浩二
阿久津利明
大槻裕人
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Resonac Corp
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Hitachi Chemical Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201110430594.6A 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法 Expired - Lifetime CN102585765B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004216039 2004-07-23
JP2004-216039 2004-07-23

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800235561A Division CN1985361A (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法

Publications (2)

Publication Number Publication Date
CN102585765A CN102585765A (zh) 2012-07-18
CN102585765B true CN102585765B (zh) 2015-01-21

Family

ID=35785268

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201110430594.6A Expired - Lifetime CN102585765B (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法
CNA2008101292389A Pending CN101311205A (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法
CNA2005800235561A Pending CN1985361A (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法

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CNA2008101292389A Pending CN101311205A (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法
CNA2005800235561A Pending CN1985361A (zh) 2004-07-23 2005-07-20 Cmp研磨剂以及衬底的研磨方法

Country Status (7)

Country Link
US (1) US9293344B2 (enExample)
EP (1) EP1796152B1 (enExample)
JP (3) JPWO2006009160A1 (enExample)
KR (1) KR100856171B1 (enExample)
CN (3) CN102585765B (enExample)
TW (1) TWI287040B (enExample)
WO (1) WO2006009160A1 (enExample)

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TW201231580A (en) * 2006-01-31 2012-08-01 Hitachi Chemical Co Ltd CMP abrasive for polishing insulating film, polishing method and semiconductor electronic parts polished by the polishing method
MD3809C2 (ro) * 2008-06-26 2009-08-31 Акционерное Общество "Azurit" Procedeu de prelucrare de finisare a plăcilor pentru acoperire din calcar hemogen
JP5632378B2 (ja) * 2008-09-26 2014-11-26 ロディア オペレーションズRhodia Operations 化学機械研磨用研磨剤組成物及びその使用法
DE112012004431B4 (de) * 2011-10-24 2025-12-31 Fujimi Incorporated Zusammensetzung zu Polierzwecken, Polierverfahren unter Verwendung derselben und Verfahren zur Herstellung eines Substrates
US8703004B2 (en) * 2011-11-14 2014-04-22 Kabushiki Kaisha Toshiba Method for chemical planarization and chemical planarization apparatus
SG11201405708VA (en) * 2012-03-14 2014-11-27 Hitachi Chemical Co Ltd Polishing method
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
JP2016175948A (ja) * 2013-08-09 2016-10-06 コニカミノルタ株式会社 Cmp用研磨液
JP5920840B2 (ja) * 2013-09-30 2016-05-18 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
KR102239131B1 (ko) * 2013-09-30 2021-04-12 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 그 제조 방법
CN104356950B (zh) * 2014-10-21 2017-01-18 李金平 一种蓝宝石晶片抛光液
JP6206388B2 (ja) * 2014-12-15 2017-10-04 信越半導体株式会社 シリコンウェーハの研磨方法
CN104987839A (zh) * 2015-06-30 2015-10-21 安徽德诺化工有限公司 Led用蓝宝石衬底研磨液
CN110998800B (zh) * 2017-08-14 2023-09-22 株式会社力森诺科 研磨液、研磨液套剂及研磨方法
CN111149193B (zh) 2017-09-29 2023-09-08 株式会社力森诺科 研磨液、研磨液套剂及研磨方法
JP6837958B2 (ja) 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
US11718767B2 (en) 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
JP7216880B2 (ja) 2019-02-19 2023-02-02 株式会社レゾナック 研磨液及び研磨方法
CN111014695A (zh) * 2019-11-21 2020-04-17 苏州新锐合金工具股份有限公司 硬质合金混合料的制备方法
JP7635875B1 (ja) 2023-09-29 2025-02-26 株式会社レゾナック 研磨液セット、研磨液の製造方法、研磨液、及び、研磨方法

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CN1453328A (zh) * 2002-04-22 2003-11-05 Jsr株式会社 化学机械研磨用的水分散体
CN1457506A (zh) * 2001-02-20 2003-11-19 日立化成工业株式会社 抛光剂及基片的抛光方法
JP2003347247A (ja) * 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用cmp研磨剤及び基板の研磨方法

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EP0661302B1 (en) * 1993-12-23 1999-09-01 Nitto Denko Corporation Process for producing aqueous Dispersion-Type Acrylic Polymer, the acrylic polymer obtained thereby, and pressure-sensitive adhesive comprising the acrylic polymer
JP2000315667A (ja) * 1999-04-28 2000-11-14 Kao Corp 研磨液組成物
JP2000323444A (ja) * 1999-05-10 2000-11-24 Kao Corp 研磨液組成物
CN1457506A (zh) * 2001-02-20 2003-11-19 日立化成工业株式会社 抛光剂及基片的抛光方法
JP2003303792A (ja) * 2002-04-10 2003-10-24 Nippon Shokubai Co Ltd 化学機械研磨用水系分散体と研磨方法
JP2003303791A (ja) * 2002-04-10 2003-10-24 Nippon Shokubai Co Ltd 化学機械研磨用水系分散体
CN1453328A (zh) * 2002-04-22 2003-11-05 Jsr株式会社 化学机械研磨用的水分散体
JP2003347247A (ja) * 2002-05-28 2003-12-05 Hitachi Chem Co Ltd 半導体絶縁膜用cmp研磨剤及び基板の研磨方法

Also Published As

Publication number Publication date
WO2006009160A1 (ja) 2006-01-26
US20080003925A1 (en) 2008-01-03
CN101311205A (zh) 2008-11-26
JP2011103498A (ja) 2011-05-26
TW200609337A (en) 2006-03-16
CN1985361A (zh) 2007-06-20
US9293344B2 (en) 2016-03-22
JP2013149992A (ja) 2013-08-01
TWI287040B (en) 2007-09-21
JP5509114B2 (ja) 2014-06-04
EP1796152B1 (en) 2019-02-27
KR100856171B1 (ko) 2008-09-03
JPWO2006009160A1 (ja) 2008-05-01
EP1796152A1 (en) 2007-06-13
EP1796152A4 (en) 2008-12-03
KR20070026843A (ko) 2007-03-08
JP5655879B2 (ja) 2015-01-21
CN102585765A (zh) 2012-07-18

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