CN102414848B - 半导体元件及制作半导体元件的方法 - Google Patents

半导体元件及制作半导体元件的方法 Download PDF

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Publication number
CN102414848B
CN102414848B CN201080018398.1A CN201080018398A CN102414848B CN 102414848 B CN102414848 B CN 102414848B CN 201080018398 A CN201080018398 A CN 201080018398A CN 102414848 B CN102414848 B CN 102414848B
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China
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mentioned
type semiconductor
semiconductor regions
interarea
degree
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CN201080018398.1A
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English (en)
Chinese (zh)
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CN102414848A (zh
Inventor
德山慎司
足立真宽
京野孝史
斋藤吉广
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
CN201080018398.1A 2010-01-18 2010-11-15 半导体元件及制作半导体元件的方法 Expired - Fee Related CN102414848B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010008189A JP5749888B2 (ja) 2010-01-18 2010-01-18 半導体素子及び半導体素子を作製する方法
JP2010-008189 2010-01-18
PCT/JP2010/070308 WO2011086755A1 (ja) 2010-01-18 2010-11-15 半導体素子及び半導体素子を作製する方法

Publications (2)

Publication Number Publication Date
CN102414848A CN102414848A (zh) 2012-04-11
CN102414848B true CN102414848B (zh) 2014-07-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080018398.1A Expired - Fee Related CN102414848B (zh) 2010-01-18 2010-11-15 半导体元件及制作半导体元件的方法

Country Status (7)

Country Link
US (1) US8227898B2 (https=)
EP (1) EP2528118A4 (https=)
JP (1) JP5749888B2 (https=)
KR (1) KR20110110803A (https=)
CN (1) CN102414848B (https=)
TW (1) TW201131810A (https=)
WO (1) WO2011086755A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5573856B2 (ja) * 2012-01-26 2014-08-20 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法
JP5828568B1 (ja) * 2014-08-29 2015-12-09 株式会社タムラ製作所 半導体素子及びその製造方法
KR101636625B1 (ko) * 2014-12-18 2016-07-05 고려대학교 산학협력단 p형 반도체 박막 구조물의 형성 방법 및 이를 이용한 p형 오믹 전극의 제조 방법
KR102331337B1 (ko) * 2015-02-16 2021-11-26 서울바이오시스 주식회사 발광 소자
KR102544673B1 (ko) * 2020-10-29 2023-06-20 웨이브로드 주식회사 반도체 발광소자 및 이를 제조하는 방법

Citations (3)

* Cited by examiner, † Cited by third party
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JP2007258375A (ja) * 2006-03-22 2007-10-04 Rohm Co Ltd 半導体素子の製造方法
CN101099223A (zh) * 2005-01-11 2008-01-02 美商旭明国际股份有限公司 具有导电性金属衬底的发光二极管
JP4375497B1 (ja) * 2009-03-11 2009-12-02 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法

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Publication number Priority date Publication date Assignee Title
JP2778349B2 (ja) 1992-04-10 1998-07-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体の電極
JP3620926B2 (ja) 1995-06-16 2005-02-16 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子
JP3555419B2 (ja) 1997-12-18 2004-08-18 豊田合成株式会社 窒化ガリウム系化合物半導体の電極形成方法及び素子の製造方法
JP4063050B2 (ja) 2002-10-31 2008-03-19 豊田合成株式会社 ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法
JP2006013474A (ja) * 2004-05-26 2006-01-12 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
US8049243B2 (en) 2004-05-26 2011-11-01 Showa Denko K.K. Gallium nitride-based compound semiconductor light emitting device
FI20045482A0 (fi) * 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
JP2008109021A (ja) * 2006-10-27 2008-05-08 Rohm Co Ltd 半導体発光素子
JP2009081374A (ja) * 2007-09-27 2009-04-16 Rohm Co Ltd 半導体発光素子
JP4390007B2 (ja) * 2008-04-07 2009-12-24 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子及びエピタキシャルウエハ
CN101874309B (zh) * 2008-09-11 2013-01-30 住友电气工业株式会社 氮化物类半导体光元件、用于氮化物类半导体光元件的外延晶片及制造半导体发光元件的方法
JP4475357B1 (ja) * 2009-06-17 2010-06-09 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101099223A (zh) * 2005-01-11 2008-01-02 美商旭明国际股份有限公司 具有导电性金属衬底的发光二极管
JP2007258375A (ja) * 2006-03-22 2007-10-04 Rohm Co Ltd 半導体素子の製造方法
JP4375497B1 (ja) * 2009-03-11 2009-12-02 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2007-258375A 2007.10.04

Also Published As

Publication number Publication date
JP2011146636A (ja) 2011-07-28
JP5749888B2 (ja) 2015-07-15
EP2528118A4 (en) 2015-04-22
KR20110110803A (ko) 2011-10-07
US8227898B2 (en) 2012-07-24
WO2011086755A1 (ja) 2011-07-21
CN102414848A (zh) 2012-04-11
US20110175103A1 (en) 2011-07-21
EP2528118A1 (en) 2012-11-28
TW201131810A (en) 2011-09-16

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