KR20110110803A - 반도체 소자 및 반도체 소자의 제조 방법 - Google Patents

반도체 소자 및 반도체 소자의 제조 방법 Download PDF

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Publication number
KR20110110803A
KR20110110803A KR1020117018941A KR20117018941A KR20110110803A KR 20110110803 A KR20110110803 A KR 20110110803A KR 1020117018941 A KR1020117018941 A KR 1020117018941A KR 20117018941 A KR20117018941 A KR 20117018941A KR 20110110803 A KR20110110803 A KR 20110110803A
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KR
South Korea
Prior art keywords
degrees
semiconductor region
main surface
type semiconductor
group iii
Prior art date
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Ceased
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KR1020117018941A
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English (en)
Korean (ko)
Inventor
신지 도쿠야마
마사히로 아다치
다카시 교노
요시히로 사이토
Original Assignee
스미토모덴키고교가부시키가이샤
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Application filed by 스미토모덴키고교가부시키가이샤 filed Critical 스미토모덴키고교가부시키가이샤
Publication of KR20110110803A publication Critical patent/KR20110110803A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
KR1020117018941A 2010-01-18 2010-11-15 반도체 소자 및 반도체 소자의 제조 방법 Ceased KR20110110803A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010008189A JP5749888B2 (ja) 2010-01-18 2010-01-18 半導体素子及び半導体素子を作製する方法
JPJP-P-2010-008189 2010-01-18

Publications (1)

Publication Number Publication Date
KR20110110803A true KR20110110803A (ko) 2011-10-07

Family

ID=44276930

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117018941A Ceased KR20110110803A (ko) 2010-01-18 2010-11-15 반도체 소자 및 반도체 소자의 제조 방법

Country Status (7)

Country Link
US (1) US8227898B2 (https=)
EP (1) EP2528118A4 (https=)
JP (1) JP5749888B2 (https=)
KR (1) KR20110110803A (https=)
CN (1) CN102414848B (https=)
TW (1) TW201131810A (https=)
WO (1) WO2011086755A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016098978A1 (ko) * 2014-12-18 2016-06-23 고려대학교 산학협력단 P형 반도체 박막 구조물의 형성 방법 및 이를 이용한 p형 오믹 전극의 제조 방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5573856B2 (ja) * 2012-01-26 2014-08-20 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法
JP5828568B1 (ja) * 2014-08-29 2015-12-09 株式会社タムラ製作所 半導体素子及びその製造方法
KR102331337B1 (ko) * 2015-02-16 2021-11-26 서울바이오시스 주식회사 발광 소자
KR102544673B1 (ko) * 2020-10-29 2023-06-20 웨이브로드 주식회사 반도체 발광소자 및 이를 제조하는 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2778349B2 (ja) 1992-04-10 1998-07-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体の電極
JP3620926B2 (ja) 1995-06-16 2005-02-16 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子
JP3555419B2 (ja) 1997-12-18 2004-08-18 豊田合成株式会社 窒化ガリウム系化合物半導体の電極形成方法及び素子の製造方法
JP4063050B2 (ja) 2002-10-31 2008-03-19 豊田合成株式会社 ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法
JP2006013474A (ja) * 2004-05-26 2006-01-12 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
US8049243B2 (en) 2004-05-26 2011-11-01 Showa Denko K.K. Gallium nitride-based compound semiconductor light emitting device
FI20045482A0 (fi) * 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
US7432119B2 (en) * 2005-01-11 2008-10-07 Semileds Corporation Light emitting diode with conducting metal substrate
JP2007258375A (ja) * 2006-03-22 2007-10-04 Rohm Co Ltd 半導体素子の製造方法
JP2008109021A (ja) * 2006-10-27 2008-05-08 Rohm Co Ltd 半導体発光素子
JP2009081374A (ja) * 2007-09-27 2009-04-16 Rohm Co Ltd 半導体発光素子
JP4390007B2 (ja) * 2008-04-07 2009-12-24 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子及びエピタキシャルウエハ
CN101874309B (zh) * 2008-09-11 2013-01-30 住友电气工业株式会社 氮化物类半导体光元件、用于氮化物类半导体光元件的外延晶片及制造半导体发光元件的方法
JP4375497B1 (ja) * 2009-03-11 2009-12-02 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
JP4475357B1 (ja) * 2009-06-17 2010-06-09 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016098978A1 (ko) * 2014-12-18 2016-06-23 고려대학교 산학협력단 P형 반도체 박막 구조물의 형성 방법 및 이를 이용한 p형 오믹 전극의 제조 방법

Also Published As

Publication number Publication date
JP2011146636A (ja) 2011-07-28
JP5749888B2 (ja) 2015-07-15
EP2528118A4 (en) 2015-04-22
CN102414848B (zh) 2014-07-09
US8227898B2 (en) 2012-07-24
WO2011086755A1 (ja) 2011-07-21
CN102414848A (zh) 2012-04-11
US20110175103A1 (en) 2011-07-21
EP2528118A1 (en) 2012-11-28
TW201131810A (en) 2011-09-16

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