TW201131810A - Semiconductor device and method for manufacturing semiconductor device - Google Patents
Semiconductor device and method for manufacturing semiconductor device Download PDFInfo
- Publication number
- TW201131810A TW201131810A TW099141600A TW99141600A TW201131810A TW 201131810 A TW201131810 A TW 201131810A TW 099141600 A TW099141600 A TW 099141600A TW 99141600 A TW99141600 A TW 99141600A TW 201131810 A TW201131810 A TW 201131810A
- Authority
- TW
- Taiwan
- Prior art keywords
- degrees
- semiconductor region
- nitride
- type semiconductor
- main surface
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 149
- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 41
- 239000000956 alloy Substances 0.000 claims abstract description 41
- 150000004767 nitrides Chemical class 0.000 claims abstract description 41
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 60
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 17
- 239000000470 constituent Substances 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 15
- -1 lanthanide nitride Chemical class 0.000 claims description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 229910002601 GaN Inorganic materials 0.000 description 33
- 238000011156 evaluation Methods 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 238000005275 alloying Methods 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 238000005253 cladding Methods 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910002059 quaternary alloy Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002602 lanthanoids Chemical group 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
Landscapes
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010008189A JP5749888B2 (ja) | 2010-01-18 | 2010-01-18 | 半導体素子及び半導体素子を作製する方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201131810A true TW201131810A (en) | 2011-09-16 |
Family
ID=44276930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099141600A TW201131810A (en) | 2010-01-18 | 2010-11-30 | Semiconductor device and method for manufacturing semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8227898B2 (https=) |
| EP (1) | EP2528118A4 (https=) |
| JP (1) | JP5749888B2 (https=) |
| KR (1) | KR20110110803A (https=) |
| CN (1) | CN102414848B (https=) |
| TW (1) | TW201131810A (https=) |
| WO (1) | WO2011086755A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5573856B2 (ja) * | 2012-01-26 | 2014-08-20 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法 |
| JP5828568B1 (ja) * | 2014-08-29 | 2015-12-09 | 株式会社タムラ製作所 | 半導体素子及びその製造方法 |
| KR101636625B1 (ko) * | 2014-12-18 | 2016-07-05 | 고려대학교 산학협력단 | p형 반도체 박막 구조물의 형성 방법 및 이를 이용한 p형 오믹 전극의 제조 방법 |
| KR102331337B1 (ko) * | 2015-02-16 | 2021-11-26 | 서울바이오시스 주식회사 | 발광 소자 |
| KR102544673B1 (ko) * | 2020-10-29 | 2023-06-20 | 웨이브로드 주식회사 | 반도체 발광소자 및 이를 제조하는 방법 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2778349B2 (ja) | 1992-04-10 | 1998-07-23 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の電極 |
| JP3620926B2 (ja) | 1995-06-16 | 2005-02-16 | 豊田合成株式会社 | ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子 |
| JP3555419B2 (ja) | 1997-12-18 | 2004-08-18 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の電極形成方法及び素子の製造方法 |
| JP4063050B2 (ja) | 2002-10-31 | 2008-03-19 | 豊田合成株式会社 | ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法 |
| JP2006013474A (ja) * | 2004-05-26 | 2006-01-12 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
| US8049243B2 (en) | 2004-05-26 | 2011-11-01 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light emitting device |
| FI20045482A0 (fi) * | 2004-12-14 | 2004-12-14 | Optogan Oy | Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi |
| US7432119B2 (en) * | 2005-01-11 | 2008-10-07 | Semileds Corporation | Light emitting diode with conducting metal substrate |
| JP2007258375A (ja) * | 2006-03-22 | 2007-10-04 | Rohm Co Ltd | 半導体素子の製造方法 |
| JP2008109021A (ja) * | 2006-10-27 | 2008-05-08 | Rohm Co Ltd | 半導体発光素子 |
| JP2009081374A (ja) * | 2007-09-27 | 2009-04-16 | Rohm Co Ltd | 半導体発光素子 |
| JP4390007B2 (ja) * | 2008-04-07 | 2009-12-24 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体素子及びエピタキシャルウエハ |
| CN101874309B (zh) * | 2008-09-11 | 2013-01-30 | 住友电气工业株式会社 | 氮化物类半导体光元件、用于氮化物类半导体光元件的外延晶片及制造半导体发光元件的方法 |
| JP4375497B1 (ja) * | 2009-03-11 | 2009-12-02 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法 |
| JP4475357B1 (ja) * | 2009-06-17 | 2010-06-09 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
-
2010
- 2010-01-18 JP JP2010008189A patent/JP5749888B2/ja not_active Expired - Fee Related
- 2010-07-14 US US12/836,222 patent/US8227898B2/en not_active Expired - Fee Related
- 2010-11-15 KR KR1020117018941A patent/KR20110110803A/ko not_active Ceased
- 2010-11-15 EP EP10843110.7A patent/EP2528118A4/en not_active Withdrawn
- 2010-11-15 CN CN201080018398.1A patent/CN102414848B/zh not_active Expired - Fee Related
- 2010-11-15 WO PCT/JP2010/070308 patent/WO2011086755A1/ja not_active Ceased
- 2010-11-30 TW TW099141600A patent/TW201131810A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011146636A (ja) | 2011-07-28 |
| JP5749888B2 (ja) | 2015-07-15 |
| EP2528118A4 (en) | 2015-04-22 |
| CN102414848B (zh) | 2014-07-09 |
| KR20110110803A (ko) | 2011-10-07 |
| US8227898B2 (en) | 2012-07-24 |
| WO2011086755A1 (ja) | 2011-07-21 |
| CN102414848A (zh) | 2012-04-11 |
| US20110175103A1 (en) | 2011-07-21 |
| EP2528118A1 (en) | 2012-11-28 |
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