JP5749888B2 - 半導体素子及び半導体素子を作製する方法 - Google Patents

半導体素子及び半導体素子を作製する方法 Download PDF

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Publication number
JP5749888B2
JP5749888B2 JP2010008189A JP2010008189A JP5749888B2 JP 5749888 B2 JP5749888 B2 JP 5749888B2 JP 2010008189 A JP2010008189 A JP 2010008189A JP 2010008189 A JP2010008189 A JP 2010008189A JP 5749888 B2 JP5749888 B2 JP 5749888B2
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Japan
Prior art keywords
degrees
semiconductor region
type semiconductor
main surface
group iii
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Expired - Fee Related
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JP2010008189A
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English (en)
Japanese (ja)
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JP2011146636A (ja
JP2011146636A5 (https=
Inventor
慎司 徳山
慎司 徳山
真寛 足立
真寛 足立
孝史 京野
孝史 京野
吉広 斎藤
吉広 斎藤
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2010008189A priority Critical patent/JP5749888B2/ja
Priority to US12/836,222 priority patent/US8227898B2/en
Priority to PCT/JP2010/070308 priority patent/WO2011086755A1/ja
Priority to EP10843110.7A priority patent/EP2528118A4/en
Priority to CN201080018398.1A priority patent/CN102414848B/zh
Priority to KR1020117018941A priority patent/KR20110110803A/ko
Priority to TW099141600A priority patent/TW201131810A/zh
Publication of JP2011146636A publication Critical patent/JP2011146636A/ja
Publication of JP2011146636A5 publication Critical patent/JP2011146636A5/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
JP2010008189A 2010-01-18 2010-01-18 半導体素子及び半導体素子を作製する方法 Expired - Fee Related JP5749888B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2010008189A JP5749888B2 (ja) 2010-01-18 2010-01-18 半導体素子及び半導体素子を作製する方法
US12/836,222 US8227898B2 (en) 2010-01-18 2010-07-14 Ohmic contact on a p-type principal surface tilting with respect to the c-plane
EP10843110.7A EP2528118A4 (en) 2010-01-18 2010-11-15 SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SEMICONDUCTOR ELEMENT
CN201080018398.1A CN102414848B (zh) 2010-01-18 2010-11-15 半导体元件及制作半导体元件的方法
PCT/JP2010/070308 WO2011086755A1 (ja) 2010-01-18 2010-11-15 半導体素子及び半導体素子を作製する方法
KR1020117018941A KR20110110803A (ko) 2010-01-18 2010-11-15 반도체 소자 및 반도체 소자의 제조 방법
TW099141600A TW201131810A (en) 2010-01-18 2010-11-30 Semiconductor device and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010008189A JP5749888B2 (ja) 2010-01-18 2010-01-18 半導体素子及び半導体素子を作製する方法

Publications (3)

Publication Number Publication Date
JP2011146636A JP2011146636A (ja) 2011-07-28
JP2011146636A5 JP2011146636A5 (https=) 2012-02-09
JP5749888B2 true JP5749888B2 (ja) 2015-07-15

Family

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Family Applications (1)

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JP2010008189A Expired - Fee Related JP5749888B2 (ja) 2010-01-18 2010-01-18 半導体素子及び半導体素子を作製する方法

Country Status (7)

Country Link
US (1) US8227898B2 (https=)
EP (1) EP2528118A4 (https=)
JP (1) JP5749888B2 (https=)
KR (1) KR20110110803A (https=)
CN (1) CN102414848B (https=)
TW (1) TW201131810A (https=)
WO (1) WO2011086755A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5573856B2 (ja) * 2012-01-26 2014-08-20 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ、及びｉｉｉ族窒化物半導体レーザを作製する方法
JP5828568B1 (ja) * 2014-08-29 2015-12-09 株式会社タムラ製作所 半導体素子及びその製造方法
KR101636625B1 (ko) * 2014-12-18 2016-07-05 고려대학교 산학협력단 p형 반도체 박막 구조물의 형성 방법 및 이를 이용한 p형 오믹 전극의 제조 방법
KR102331337B1 (ko) * 2015-02-16 2021-11-26 서울바이오시스 주식회사 발광 소자
KR102544673B1 (ko) * 2020-10-29 2023-06-20 웨이브로드 주식회사 반도체 발광소자 및 이를 제조하는 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2778349B2 (ja) 1992-04-10 1998-07-23 日亜化学工業株式会社 窒化ガリウム系化合物半導体の電極
JP3620926B2 (ja) 1995-06-16 2005-02-16 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子
JP3555419B2 (ja) 1997-12-18 2004-08-18 豊田合成株式会社 窒化ガリウム系化合物半導体の電極形成方法及び素子の製造方法
JP4063050B2 (ja) 2002-10-31 2008-03-19 豊田合成株式会社 ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法
JP2006013474A (ja) * 2004-05-26 2006-01-12 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
US8049243B2 (en) 2004-05-26 2011-11-01 Showa Denko K.K. Gallium nitride-based compound semiconductor light emitting device
FI20045482A0 (fi) * 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
US7432119B2 (en) * 2005-01-11 2008-10-07 Semileds Corporation Light emitting diode with conducting metal substrate
JP2007258375A (ja) * 2006-03-22 2007-10-04 Rohm Co Ltd 半導体素子の製造方法
JP2008109021A (ja) * 2006-10-27 2008-05-08 Rohm Co Ltd 半導体発光素子
JP2009081374A (ja) * 2007-09-27 2009-04-16 Rohm Co Ltd 半導体発光素子
JP4390007B2 (ja) * 2008-04-07 2009-12-24 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子及びエピタキシャルウエハ
CN101874309B (zh) * 2008-09-11 2013-01-30 住友电气工业株式会社 氮化物类半导体光元件、用于氮化物类半导体光元件的外延晶片及制造半导体发光元件的方法
JP4375497B1 (ja) * 2009-03-11 2009-12-02 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
JP4475357B1 (ja) * 2009-06-17 2010-06-09 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Also Published As

Publication number Publication date
JP2011146636A (ja) 2011-07-28
EP2528118A4 (en) 2015-04-22
CN102414848B (zh) 2014-07-09
KR20110110803A (ko) 2011-10-07
US8227898B2 (en) 2012-07-24
WO2011086755A1 (ja) 2011-07-21
CN102414848A (zh) 2012-04-11
US20110175103A1 (en) 2011-07-21
EP2528118A1 (en) 2012-11-28
TW201131810A (en) 2011-09-16

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