JP2009152530A - 窒化物半導体発光素子及びその製造方法 - Google Patents
窒化物半導体発光素子及びその製造方法 Download PDFInfo
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- JP2009152530A JP2009152530A JP2008179568A JP2008179568A JP2009152530A JP 2009152530 A JP2009152530 A JP 2009152530A JP 2008179568 A JP2008179568 A JP 2008179568A JP 2008179568 A JP2008179568 A JP 2008179568A JP 2009152530 A JP2009152530 A JP 2009152530A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 110
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 104
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910000846 In alloy Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 17
- 230000008859 change Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000002834 transmittance Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】本発明の一側面は、n型及びp型窒化物半導体層とこれらの間に形成された活性層を備える発光構造物と、上記n型及びp型窒化物半導体層とそれぞれ電気的に連結されたn型及びp型電極及び上記n型窒化物半導体層と上記n型電極の間に形成され、Inを含む物質からなる第1層及び上記第1層上に形成され透明伝導性酸化物からなる第2層を備えるn型オーミックコンタクト層を含む窒化物半導体発光素子を提供する。これにより、高い投光性を有しながらも電気的特性に優れたn型電極を備える窒化物半導体発光素子を提供することが出来る。さらに、上記のような優れた光学的・電気的特性を表すための最適化した窒化物半導体発光素子の製造方法を提供することが出来る。
【選択図】 図2
Description
22 活性層
23 p型窒化物半導体層
24 導電性基板
25 n型オーミックコンタクト層
26 n型電極
47 GaN基板
54 サファイア基板
Claims (12)
- n型窒化物半導体層及びp型窒化物半導体層とこれらの間に形成された活性層を備える発光構造物と、
前記n型窒化物半導体層及びp型窒化物半導体層にそれぞれ電気的に連結されたn型電極及びp型電極と、
前記n型窒化物半導体層と前記n型電極との間に形成され、Inを含む物質からなる第1層と前記第1層上に形成され透明伝導性酸化物からなる第2層とを備えるn型オーミックコンタクト層と、
を含むことを特徴する窒化物半導体発光素子。 - 前記第1層は、In合金からなることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記In合金に含まれる元素は、Ti、Al、Cr、Ni、Pd、Pt、Mo、Co及びMgで構成されたグループから選択された少なくとも一つの元素であることを特徴とする請求項2に記載の窒化物半導体発光素子。
- 前記第2層は、In、Sn、Al、Zn及びGaで構成されたグループから選択された少なくとも一つの物質を含むことを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記第2層は、ITO、CIO、AZO、ZnO、NiO及びIn2O3で構成されたグループから選択された物質からなることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記第1層の厚さは、10〜300Åであることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記第2層の厚さは、500〜5000Åであることを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記n型オーミックコンタクト層が形成される前記n型窒化物半導体層の面は、Ga−極性面またはN−極性面であることを特徴とする請求項1に記載の窒化物半導体発光素子。
- n型窒化物半導体層、活性層及びp型窒化物半導体層を順次積層して発光構造物を形成する段階と、
前記n型窒化物半導体層の一面にInを含む物質からなる第1層を形成し、前記第1層上に透明伝導性酸化物からなる第2層を形成してn型オーミックコンタクト層を形成する段階と、
前記n型オーミックコンタクト層上にn型電極を形成する段階と、
前記p型窒化物半導体層に電気的に連結されるようp型電極を形成する段階と、
を含むことを特徴とする窒化物半導体発光素子の製造方法。 - 前記n型オーミックコンタクト層を形成する段階の後、前記n型オーミックコンタクト層を熱処理する段階をさらに含むことを特徴とする請求項9に記載の窒化物半導体発光素子の製造方法。
- 前記n型オーミックコンタクト層を熱処理する段階は、300〜500℃の温度条件で行われることを特徴とする請求項10に記載の窒化物半導体発光素子の製造方法。
- 前記第1層を形成する段階は、スパッタリングにより行われることを特徴とする請求項9に記載の窒化物半導体発光素子の製造方法。
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KR1020070134903A KR101025948B1 (ko) | 2007-12-21 | 2007-12-21 | 질화물 반도체 발광소자 및 그 제조방법 |
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US (1) | US7928467B2 (ja) |
JP (1) | JP2009152530A (ja) |
KR (1) | KR101025948B1 (ja) |
Families Citing this family (4)
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US8581229B2 (en) | 2009-11-23 | 2013-11-12 | Koninklijke Philips N.V. | III-V light emitting device with thin n-type region |
KR100986327B1 (ko) | 2009-12-08 | 2010-10-08 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
CN101872801B (zh) * | 2010-05-20 | 2012-04-25 | 厦门大学 | 一种掺铝氧化锌重掺杂n型硅欧姆接触的制备方法 |
KR20120092326A (ko) * | 2011-02-11 | 2012-08-21 | 서울옵토디바이스주식회사 | 광 결정 구조를 갖는 비극성 발광 다이오드 및 그것을 제조하는 방법 |
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JPH09293934A (ja) * | 1996-04-26 | 1997-11-11 | Sony Corp | 半導体発光素子 |
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- 2008-07-08 US US12/216,568 patent/US7928467B2/en not_active Expired - Fee Related
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US20090159920A1 (en) | 2009-06-25 |
KR20090067305A (ko) | 2009-06-25 |
US7928467B2 (en) | 2011-04-19 |
KR101025948B1 (ko) | 2011-03-30 |
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