CN102354529B - 半导体存储器件 - Google Patents

半导体存储器件 Download PDF

Info

Publication number
CN102354529B
CN102354529B CN201110219399.9A CN201110219399A CN102354529B CN 102354529 B CN102354529 B CN 102354529B CN 201110219399 A CN201110219399 A CN 201110219399A CN 102354529 B CN102354529 B CN 102354529B
Authority
CN
China
Prior art keywords
data
mentioned
memory element
potential
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110219399.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN102354529A (zh
Inventor
白滨政则
县泰宏
山本安卫
菊川博仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN102354529A publication Critical patent/CN102354529A/zh
Application granted granted Critical
Publication of CN102354529B publication Critical patent/CN102354529B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/148—Details of power up or power down circuits, standby circuits or recovery circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2227—Standby or low power modes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
CN201110219399.9A 2006-03-01 2007-03-01 半导体存储器件 Active CN102354529B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006055110A JP2007234133A (ja) 2006-03-01 2006-03-01 半導体記憶装置及び半導体集積回路システム
JP055110/2006 2006-03-01

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2007100861195A Division CN101030448B (zh) 2006-03-01 2007-03-01 半导体存储器件及半导体集成电路系统

Publications (2)

Publication Number Publication Date
CN102354529A CN102354529A (zh) 2012-02-15
CN102354529B true CN102354529B (zh) 2014-03-26

Family

ID=38471291

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110219399.9A Active CN102354529B (zh) 2006-03-01 2007-03-01 半导体存储器件
CN2007100861195A Active CN101030448B (zh) 2006-03-01 2007-03-01 半导体存储器件及半导体集成电路系统

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2007100861195A Active CN101030448B (zh) 2006-03-01 2007-03-01 半导体存储器件及半导体集成电路系统

Country Status (3)

Country Link
US (1) US7518903B2 (enExample)
JP (1) JP2007234133A (enExample)
CN (2) CN102354529B (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234133A (ja) * 2006-03-01 2007-09-13 Matsushita Electric Ind Co Ltd 半導体記憶装置及び半導体集積回路システム
JP5159224B2 (ja) * 2007-09-21 2013-03-06 株式会社東芝 抵抗変化メモリ装置
KR100895387B1 (ko) * 2007-10-16 2009-04-30 주식회사 하이닉스반도체 상 변화 메모리 장치
WO2009084514A1 (ja) * 2007-12-27 2009-07-09 Nec Corporation 記憶素子、半導体記憶装置、および情報読み出し方法
EP2107571B1 (en) 2008-04-03 2012-04-25 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
KR101453969B1 (ko) * 2008-07-31 2014-10-22 삼성전자주식회사 저항성 메모리 장치 및 그것의 쓰기 방법
WO2010038565A1 (ja) * 2008-09-30 2010-04-08 日本電気株式会社 磁気ランダムアクセスメモリ及び磁気ランダムアクセスメモリの動作方法
JP5287197B2 (ja) * 2008-12-09 2013-09-11 ソニー株式会社 半導体装置
JP2010157567A (ja) * 2008-12-26 2010-07-15 Funai Electric Advanced Applied Technology Research Institute Inc メモリセルアレイ
JP5549105B2 (ja) * 2009-04-15 2014-07-16 ソニー株式会社 抵抗変化型メモリデバイスおよびその動作方法
KR101057724B1 (ko) * 2009-05-13 2011-08-18 주식회사 하이닉스반도체 반도체 메모리 장치와 그의 구동 방법
CN102117644B (zh) * 2009-12-30 2013-09-11 中国科学院微电子研究所 一种存储器读出电路
JP5521850B2 (ja) * 2010-07-21 2014-06-18 ソニー株式会社 抵抗変化型メモリデバイスおよびその駆動方法
KR101736383B1 (ko) 2010-08-03 2017-05-30 삼성전자주식회사 메모리 장치, 이의 프리차지 제어 방법, 및 이를 포함하는 장치들
CN101916590B (zh) * 2010-08-19 2013-01-09 中国科学院上海微系统与信息技术研究所 相变存储器的数据读出方法及读出电路
CN101976578B (zh) * 2010-10-09 2013-10-02 中国科学院上海微系统与信息技术研究所 相变存储单元的数据读出电路及读出方法
CN102479546B (zh) * 2010-11-30 2014-05-14 中国科学院微电子研究所 一种对电阻存储器进行编程的电路
JP5998059B2 (ja) * 2011-02-01 2016-09-28 パナソニック株式会社 不揮発性半導体記憶装置
KR20120097998A (ko) * 2011-02-28 2012-09-05 에스케이하이닉스 주식회사 집적 회로
WO2013028377A1 (en) 2011-08-24 2013-02-28 Rambus Inc. System and method for performing memory operations on rram cells
JP5642649B2 (ja) 2011-10-07 2014-12-17 シャープ株式会社 半導体記憶装置及び半導体装置
KR101813182B1 (ko) * 2011-11-16 2017-12-29 삼성전자주식회사 비휘발성 메모리 소자를 포함하는 다치 논리 장치
JPWO2013179593A1 (ja) * 2012-05-29 2016-01-18 株式会社ソシオネクスト 半導体記憶装置および半導体記憶装置を搭載した半導体装置
JP2014017042A (ja) * 2012-07-11 2014-01-30 Toppan Printing Co Ltd 不揮発性メモリセル、不揮発性メモリセルアレイおよび不揮発性メモリ
US9183929B2 (en) * 2012-08-29 2015-11-10 Micron Technology, Inc. Systems, methods and devices for programming a multilevel resistive memory cell
US8902636B2 (en) * 2013-03-22 2014-12-02 Akira Katayama Resistance change memory
JP2014229758A (ja) * 2013-05-22 2014-12-08 ソニー株式会社 半導体装置およびその製造方法
WO2016068912A1 (en) 2014-10-29 2016-05-06 Hewlett-Packard Development Company, L.P. Printhead with a number of memristors and inverters
CN105702290B (zh) * 2014-11-25 2019-08-30 亿而得微电子股份有限公司 低成本电子抹除式可复写只读存储器数组的操作方法
CN106033679B (zh) * 2015-03-12 2019-03-08 华邦电子股份有限公司 电阻式存储器及量测该电阻式存储器的量测系统
US9728253B2 (en) * 2015-11-30 2017-08-08 Windbond Electronics Corp. Sense circuit for RRAM
KR102514045B1 (ko) * 2016-04-21 2023-03-24 삼성전자주식회사 저항성 메모리 장치 및 이를 포함하는 메모리 시스템
US9882566B1 (en) * 2017-01-10 2018-01-30 Ememory Technology Inc. Driving circuit for non-volatile memory
KR102570472B1 (ko) * 2017-01-10 2023-08-25 에스케이하이닉스 주식회사 반도체 장치
US10998044B2 (en) 2017-01-20 2021-05-04 Hefei Reliance Memory Limited RRAM write using a ramp control circuit
US10236053B1 (en) * 2017-10-17 2019-03-19 R&D 3 Llc Method and circuit device incorporating time-to-transition signal node sensing
US10762960B2 (en) * 2017-11-30 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Resistive random access memory device
JP2019164875A (ja) 2018-03-16 2019-09-26 東芝メモリ株式会社 半導体記憶装置
US10818327B2 (en) * 2018-06-29 2020-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuit and method of operating same
JP2020077445A (ja) * 2018-11-07 2020-05-21 ソニーセミコンダクタソリューションズ株式会社 記憶制御装置、記憶装置、および、情報処理システム
CN110223725B (zh) * 2019-05-22 2022-03-22 北京航空航天大学 一种非易失性随机存储器数据读取电路、存储器及方法
KR102667819B1 (ko) * 2019-07-11 2024-05-21 삼성전자주식회사 전원 전압과 관계없이 동작하는 스위치 회로를 포함하는 메모리 장치
US11223360B2 (en) 2019-07-23 2022-01-11 Cirrus Logic, Inc. Control of semiconductor devices
US11651819B2 (en) * 2020-07-24 2023-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Memory circuit and method of operating the same
US11423973B2 (en) * 2020-08-26 2022-08-23 Micron Technology, Inc. Contemporaneous sense amplifier timings for operations at internal and edge memory array mats
US12087359B2 (en) * 2022-06-13 2024-09-10 Applied Materials, Inc. Memory cell selector for high-voltage set and reset operations
CN115240733B (zh) * 2022-09-23 2023-01-03 浙江力积存储科技有限公司 减小读出放大器面积的方法、电路及dram存储装置
CN119091944B (zh) * 2024-08-21 2026-08-04 北方集成电路技术创新中心(北京)有限公司 一种存储器的读取方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101030448A (zh) * 2006-03-01 2007-09-05 松下电器产业株式会社 半导体存储器件及半导体集成电路系统

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001035164A (ja) * 1999-07-19 2001-02-09 Fujitsu Ltd 半導体記憶装置
US7116593B2 (en) * 2002-02-01 2006-10-03 Hitachi, Ltd. Storage device
JP4167458B2 (ja) * 2002-07-24 2008-10-15 松下電器産業株式会社 半導体メモリ装置及び半導体集積回路
JP2004079033A (ja) 2002-08-12 2004-03-11 Renesas Technology Corp 不揮発性半導体記憶装置
JP2004158119A (ja) * 2002-11-06 2004-06-03 Sharp Corp 不揮発性半導体記憶装置
JP4249992B2 (ja) * 2002-12-04 2009-04-08 シャープ株式会社 半導体記憶装置及びメモリセルの書き込み並びに消去方法
JP4205938B2 (ja) * 2002-12-05 2009-01-07 シャープ株式会社 不揮発性メモリ装置
DE60327551D1 (de) * 2002-12-05 2009-06-18 Nxp Bv Programmierbare nichtflüchtige halbleiterspeicheranordnung
JP4113493B2 (ja) * 2003-06-12 2008-07-09 シャープ株式会社 不揮発性半導体記憶装置及びその制御方法
EP1511042B1 (en) * 2003-08-27 2012-12-05 STMicroelectronics Srl Phase-change memory device with biasing of deselected bit lines
JP4192060B2 (ja) * 2003-09-12 2008-12-03 シャープ株式会社 不揮発性半導体記憶装置
JP4063239B2 (ja) 2004-04-16 2008-03-19 ソニー株式会社 データ読出し回路及びこの回路を有する半導体装置
JP2006134398A (ja) * 2004-11-04 2006-05-25 Sony Corp 記憶装置及び半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101030448A (zh) * 2006-03-01 2007-09-05 松下电器产业株式会社 半导体存储器件及半导体集成电路系统

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2004-158119A 2004.06.03

Also Published As

Publication number Publication date
US7518903B2 (en) 2009-04-14
US20070206403A1 (en) 2007-09-06
CN102354529A (zh) 2012-02-15
CN101030448B (zh) 2011-09-07
JP2007234133A (ja) 2007-09-13
CN101030448A (zh) 2007-09-05

Similar Documents

Publication Publication Date Title
US7518903B2 (en) Semiconductor memory device and semiconductor integrated circuit system
JP2007234133A5 (enExample)
US8174922B2 (en) Anti-fuse memory cell and semiconductor memory device
JP4606869B2 (ja) 半導体装置
CN101221807B (zh) 半导体存储器、读出放大器电路和存储器单元读取方法
US7590003B2 (en) Self-reference sense amplifier circuit and sensing method
US20090237988A1 (en) Magnetic memory device
JP2004355689A (ja) 半導体装置
TWI533298B (zh) 可變電阻式記憶體及其寫入方法
US10957403B2 (en) Semiconductor device including a voltage generation circuit configured with first and second current circuits for increasing voltages of first, second, and third output nodes
JP2010165397A (ja) 不揮発性半導体記憶装置
CN105976854A (zh) 半导体存储装置及其驱动方法
US20160133320A1 (en) Sense amplifier including a single-transistor amplifier and level shifter and methods therefor
JP5368266B2 (ja) 半導体不揮発記憶回路
WO2011101947A1 (ja) 半導体装置
CN113345492A (zh) 电压发生电路和使用该电压发生电路的非易失性存储装置
US9443585B2 (en) Resistance change memory
KR100781980B1 (ko) 불휘발성 메모리 장치에서의 디코더 및 그에 의한 디코딩방법
JP2011204358A (ja) 半導体記憶装置
JP2012185870A (ja) 半導体記憶装置
US8514644B2 (en) Bit line sense amplifier control circuit and semiconductor memory apparatus having the same
US10586587B2 (en) Semiconductor memory device
JP2004253135A (ja) 不揮発性半導体記憶装置
US9368165B2 (en) Current generation circuit and semiconductor device having the same
JP2009116993A (ja) 不揮発性半導体記憶装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200525

Address after: 617-8520, shizushao, Nagaoka, Kyoto, Japan

Patentee after: Panasonic semiconductor solutions Co., Ltd

Address before: Osaka Japan

Patentee before: Panasonic Corp.