CN102169933B - 具有多单元阵列的半导体发光器件、发光模块和照明设备 - Google Patents
具有多单元阵列的半导体发光器件、发光模块和照明设备 Download PDFInfo
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- CN102169933B CN102169933B CN201110048129.6A CN201110048129A CN102169933B CN 102169933 B CN102169933 B CN 102169933B CN 201110048129 A CN201110048129 A CN 201110048129A CN 102169933 B CN102169933 B CN 102169933B
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- light emitting
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Landscapes
- Led Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0015422 | 2010-02-19 | ||
| KR1020100015422A KR101601624B1 (ko) | 2010-02-19 | 2010-02-19 | 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102169933A CN102169933A (zh) | 2011-08-31 |
| CN102169933B true CN102169933B (zh) | 2014-12-03 |
Family
ID=44261711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110048129.6A Active CN102169933B (zh) | 2010-02-19 | 2011-02-21 | 具有多单元阵列的半导体发光器件、发光模块和照明设备 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8829540B2 (enExample) |
| EP (1) | EP2365527B1 (enExample) |
| JP (1) | JP5683994B2 (enExample) |
| KR (1) | KR101601624B1 (enExample) |
| CN (1) | CN102169933B (enExample) |
| TW (1) | TWI437702B (enExample) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101211733B1 (ko) * | 2010-10-28 | 2012-12-12 | 엘지이노텍 주식회사 | 광소자 패키지용 기판 |
| US8193015B2 (en) * | 2010-11-17 | 2012-06-05 | Pinecone Energies, Inc. | Method of forming a light-emitting-diode array with polymer between light emitting devices |
| US9653643B2 (en) * | 2012-04-09 | 2017-05-16 | Cree, Inc. | Wafer level packaging of light emitting diodes (LEDs) |
| RU2014113263A (ru) * | 2011-09-06 | 2015-10-20 | Конинклейке Филипс Н.В. | Топология распределения и соединения led в матрице большой площади |
| KR20130035658A (ko) | 2011-09-30 | 2013-04-09 | 서울옵토디바이스주식회사 | 발광 다이오드 소자용 기판 제조 방법 |
| KR101895359B1 (ko) | 2011-10-14 | 2018-09-07 | 엘지이노텍 주식회사 | 씨오비 패키지를 이용한 조명 모듈 구현 방법 및 그 조명 모듈 |
| CN102324460A (zh) * | 2011-10-24 | 2012-01-18 | 佛山市国星光电股份有限公司 | 基于图形化封装基板的led封装装置 |
| TW201318147A (zh) * | 2011-10-26 | 2013-05-01 | 華夏光股份有限公司 | 發光二極體陣列 |
| CN102403331A (zh) * | 2011-10-26 | 2012-04-04 | 华夏光股份有限公司 | 发光二极管阵列 |
| CN102497691B (zh) * | 2011-11-25 | 2013-12-25 | 俞国宏 | 一种可直接与交流电连接的led灯泡 |
| KR101412011B1 (ko) * | 2011-12-06 | 2014-06-27 | 엘이디라이텍(주) | 발광소자 어레이 및 이를 포함하는 조명장치 |
| TWI438895B (zh) * | 2012-02-09 | 2014-05-21 | 隆達電子股份有限公司 | 發光二極體陣列 |
| JP5992695B2 (ja) * | 2012-02-29 | 2016-09-14 | スタンレー電気株式会社 | 半導体発光素子アレイ及び車両用灯具 |
| KR20130109319A (ko) | 2012-03-27 | 2013-10-08 | 삼성전자주식회사 | 반도체 발광장치, 발광모듈 및 조명장치 |
| TW201347223A (zh) * | 2012-05-08 | 2013-11-16 | Chi Mei Lighting Tech Corp | 高壓發光二極體及其製造方法 |
| KR20140006485A (ko) | 2012-07-05 | 2014-01-16 | 삼성전자주식회사 | 멀티셀 어레이를 갖는 반도체 발광장치 및 그 제조 방법 |
| CN103633232B (zh) * | 2012-08-22 | 2016-09-07 | 华夏光股份有限公司 | 半导体发光装置 |
| CN104813489B (zh) * | 2012-11-23 | 2018-01-02 | 首尔伟傲世有限公司 | 发光二极管及其制造方法 |
| CN107768399B (zh) | 2012-12-21 | 2022-02-18 | 首尔伟傲世有限公司 | 发光二极管 |
| US9356212B2 (en) * | 2012-12-21 | 2016-05-31 | Seoul Viosys Co., Ltd. | Light emitting diode and method of fabricating the same |
| KR102087935B1 (ko) * | 2012-12-27 | 2020-03-11 | 엘지이노텍 주식회사 | 발광 소자 |
| JP6176032B2 (ja) * | 2013-01-30 | 2017-08-09 | 日亜化学工業株式会社 | 半導体発光素子 |
| KR102222861B1 (ko) * | 2013-07-18 | 2021-03-04 | 루미리즈 홀딩 비.브이. | 고반사성 플립칩 led 다이 |
| EP2830094B1 (en) * | 2013-07-22 | 2020-02-26 | LG Innotek Co., Ltd. | Light emitting device |
| KR102194805B1 (ko) * | 2013-07-22 | 2020-12-28 | 엘지이노텍 주식회사 | 발광소자 |
| KR102099436B1 (ko) * | 2013-10-01 | 2020-04-09 | 엘지이노텍 주식회사 | 발광 소자 |
| US9780276B2 (en) * | 2014-01-23 | 2017-10-03 | Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences | Wafer-level semiconductor device and manufacturing method thereof |
| TWI769941B (zh) * | 2014-06-18 | 2022-07-01 | 愛爾蘭商艾克斯展示公司技術有限公司 | 微組裝發光二極體顯示器及照明元件 |
| KR20160031938A (ko) * | 2014-09-15 | 2016-03-23 | 서울바이오시스 주식회사 | 발광 다이오드 |
| CN105865668B (zh) * | 2015-01-20 | 2019-12-10 | 北京纳米能源与系统研究所 | 压力传感成像阵列、设备及其制作方法 |
| CN104752586A (zh) * | 2015-03-27 | 2015-07-01 | 华南理工大学 | 一种led图形优化封装基板、led封装体及其制备方法 |
| TWI641166B (zh) * | 2015-10-16 | 2018-11-11 | 南韓商首爾偉傲世有限公司 | 小型發光二極體晶片 |
| TWI565095B (zh) * | 2015-11-09 | 2017-01-01 | 錼創科技股份有限公司 | 發光模組 |
| EP3185293B1 (en) * | 2015-12-25 | 2020-03-25 | Nichia Corporation | Light emitting element |
| JP6354799B2 (ja) * | 2015-12-25 | 2018-07-11 | 日亜化学工業株式会社 | 発光素子 |
| WO2017119730A1 (ko) * | 2016-01-05 | 2017-07-13 | 엘지이노텍(주) | 발광 소자 |
| KR102263041B1 (ko) | 2016-02-26 | 2021-06-09 | 삼성전자주식회사 | 멀티 컬러를 구현할 수 있는 발광 소자 |
| US10153256B2 (en) | 2016-03-03 | 2018-12-11 | X-Celeprint Limited | Micro-transfer printable electronic component |
| KR102480220B1 (ko) | 2016-04-08 | 2022-12-26 | 삼성전자주식회사 | 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널 |
| KR101852436B1 (ko) * | 2016-06-22 | 2018-04-26 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 차량용 램프 |
| BR112020009088B1 (pt) | 2017-11-08 | 2023-12-12 | Seoul Viosys Co., Ltd | Unidade de led para exibição e aparelho de exibição utilizando a mesma |
| DE112018006755B4 (de) | 2018-01-03 | 2025-11-27 | Lg Electronics Inc. | Eine Fahrzeuglampe, die eine lichtemittierende Halbleitervorrichtung verwendet |
| JP6822429B2 (ja) * | 2018-02-19 | 2021-01-27 | 日亜化学工業株式会社 | 発光素子 |
| CN208014703U (zh) * | 2018-03-29 | 2018-10-26 | 昆山工研院新型平板显示技术中心有限公司 | 驱动背板、微发光二极管显示面板及显示器 |
| KR102556280B1 (ko) * | 2018-07-05 | 2023-07-17 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 램프 |
| US11282984B2 (en) * | 2018-10-05 | 2022-03-22 | Seoul Viosys Co., Ltd. | Light emitting device |
| US11482650B2 (en) * | 2018-11-07 | 2022-10-25 | Seoul Viosys Co., Ltd. | Light emitting device including light shielding layer |
| JP7348520B2 (ja) * | 2018-12-25 | 2023-09-21 | 日亜化学工業株式会社 | 発光装置及び表示装置 |
| KR102659254B1 (ko) * | 2018-12-26 | 2024-04-22 | 엘지전자 주식회사 | 반도체 발광소자를 이용한 램프 |
| TWI801648B (zh) * | 2019-03-21 | 2023-05-11 | 范文昌 | 顯示裝置的導電基板 |
| US20200302858A1 (en) * | 2019-03-21 | 2020-09-24 | Xinchen Technology Co., Ltd. | Conductive substrate of a display device |
| TWI886736B (zh) * | 2019-07-31 | 2025-06-11 | 晶元光電股份有限公司 | 發光二極體元件及其製造方法 |
| TWI830759B (zh) * | 2019-07-31 | 2024-02-01 | 晶元光電股份有限公司 | 發光二極體元件及其製造方法 |
| TWM614583U (zh) * | 2020-11-30 | 2021-07-21 | 范文正 | 發光顯示裝置 |
| CN113437203A (zh) * | 2021-06-28 | 2021-09-24 | 上海天马微电子有限公司 | 一种显示面板及显示装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1402880A (zh) * | 1999-12-03 | 2003-03-12 | 美商克立光学公司 | 加强光放出的微发光二极管数组 |
| CN1812117A (zh) * | 2004-12-02 | 2006-08-02 | 三星电机株式会社 | 半导体发光器件及其制造方法 |
| US7462869B2 (en) * | 2004-05-17 | 2008-12-09 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and semiconductor light emitting apparatus |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US746286A (en) * | 1903-09-19 | 1903-12-08 | Union Mfg Co | Plane-iron. |
| JPS5012299Y1 (enExample) * | 1970-12-30 | 1975-04-16 | ||
| JPS5012299A (enExample) | 1973-06-04 | 1975-02-07 | ||
| JPS63142685A (ja) | 1986-12-04 | 1988-06-15 | Yokogawa Electric Corp | Ledアレ− |
| JPH02296322A (ja) | 1989-05-11 | 1990-12-06 | Nec Corp | 半導体素子の電極形成方法 |
| JPH05267718A (ja) | 1992-03-19 | 1993-10-15 | Mitsubishi Electric Corp | 半導体発光素子の評価装置及び評価方法 |
| JP3795298B2 (ja) * | 2000-03-31 | 2006-07-12 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
| US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
| JP4309106B2 (ja) | 2002-08-21 | 2009-08-05 | 士郎 酒井 | InGaN系化合物半導体発光装置の製造方法 |
| EP2154721B1 (en) * | 2002-08-29 | 2019-08-07 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting diodes |
| WO2005018008A1 (ja) | 2003-08-19 | 2005-02-24 | Nichia Corporation | 半導体素子 |
| EP1658642B1 (en) | 2003-08-28 | 2014-02-26 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
| US7285801B2 (en) * | 2004-04-02 | 2007-10-23 | Lumination, Llc | LED with series-connected monolithically integrated mesas |
| KR100638666B1 (ko) | 2005-01-03 | 2006-10-30 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
| US7474681B2 (en) * | 2005-05-13 | 2009-01-06 | Industrial Technology Research Institute | Alternating current light-emitting device |
| KR100634307B1 (ko) * | 2005-08-10 | 2006-10-16 | 서울옵토디바이스주식회사 | 발광 소자 및 이의 제조 방법 |
| JP5012299B2 (ja) | 2007-08-07 | 2012-08-29 | トヨタ自動車株式会社 | ガス拡散層の製造方法、膜電極接合体の製造方法、燃料電池の製造方法、および、ガス拡散層 |
| TWI343133B (en) * | 2007-08-15 | 2011-06-01 | Huga Optotech Inc | Semiconductor light-emitting device with high light-extraction efficiency and method of fabricating the same |
| KR100928259B1 (ko) | 2007-10-15 | 2009-11-24 | 엘지전자 주식회사 | 발광 장치 및 그 제조방법 |
| KR101448153B1 (ko) * | 2008-06-25 | 2014-10-08 | 삼성전자주식회사 | 발광 다이오드용 멀티칩 패키지 및 멀티칩 패키지 방식의발광 다이오드 소자 |
| US8716723B2 (en) * | 2008-08-18 | 2014-05-06 | Tsmc Solid State Lighting Ltd. | Reflective layer between light-emitting diodes |
-
2010
- 2010-02-19 KR KR1020100015422A patent/KR101601624B1/ko active Active
-
2011
- 2011-01-27 TW TW100103014A patent/TWI437702B/zh active
- 2011-02-17 US US13/029,739 patent/US8829540B2/en active Active
- 2011-02-18 JP JP2011033514A patent/JP5683994B2/ja active Active
- 2011-02-18 EP EP11155000.0A patent/EP2365527B1/en active Active
- 2011-02-21 CN CN201110048129.6A patent/CN102169933B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1402880A (zh) * | 1999-12-03 | 2003-03-12 | 美商克立光学公司 | 加强光放出的微发光二极管数组 |
| US7462869B2 (en) * | 2004-05-17 | 2008-12-09 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and semiconductor light emitting apparatus |
| CN1812117A (zh) * | 2004-12-02 | 2006-08-02 | 三星电机株式会社 | 半导体发光器件及其制造方法 |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2001-284642A 2001.10.12 * |
| JP特开2004-79867A 2004.03.11 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI437702B (zh) | 2014-05-11 |
| US8829540B2 (en) | 2014-09-09 |
| US20110204387A1 (en) | 2011-08-25 |
| KR101601624B1 (ko) | 2016-03-09 |
| CN102169933A (zh) | 2011-08-31 |
| JP2011171739A (ja) | 2011-09-01 |
| TW201212219A (en) | 2012-03-16 |
| EP2365527B1 (en) | 2016-11-02 |
| EP2365527A2 (en) | 2011-09-14 |
| EP2365527A3 (en) | 2014-01-29 |
| KR20110095772A (ko) | 2011-08-25 |
| JP5683994B2 (ja) | 2015-03-11 |
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