KR101601624B1 - 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치 - Google Patents

멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치 Download PDF

Info

Publication number
KR101601624B1
KR101601624B1 KR1020100015422A KR20100015422A KR101601624B1 KR 101601624 B1 KR101601624 B1 KR 101601624B1 KR 1020100015422 A KR1020100015422 A KR 1020100015422A KR 20100015422 A KR20100015422 A KR 20100015422A KR 101601624 B1 KR101601624 B1 KR 101601624B1
Authority
KR
South Korea
Prior art keywords
light emitting
delete delete
substrate
type semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020100015422A
Other languages
English (en)
Korean (ko)
Other versions
KR20110095772A (ko
Inventor
김성태
김태훈
김재윤
하해수
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020100015422A priority Critical patent/KR101601624B1/ko
Priority to TW100103014A priority patent/TWI437702B/zh
Priority to US13/029,739 priority patent/US8829540B2/en
Priority to JP2011033514A priority patent/JP5683994B2/ja
Priority to EP11155000.0A priority patent/EP2365527B1/en
Priority to CN201110048129.6A priority patent/CN102169933B/zh
Publication of KR20110095772A publication Critical patent/KR20110095772A/ko
Application granted granted Critical
Publication of KR101601624B1 publication Critical patent/KR101601624B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

Landscapes

  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
KR1020100015422A 2010-02-19 2010-02-19 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치 Active KR101601624B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020100015422A KR101601624B1 (ko) 2010-02-19 2010-02-19 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치
TW100103014A TWI437702B (zh) 2010-02-19 2011-01-27 具多單元陣列之半導體發光裝置、發光模組，及照明設備
US13/029,739 US8829540B2 (en) 2010-02-19 2011-02-17 Semiconductor light emitting device having multi-cell array, light emitting module, and illumination apparatus
JP2011033514A JP5683994B2 (ja) 2010-02-19 2011-02-18 マルチセルアレイを有する半導体発光装置、発光モジュール及び照明装置
EP11155000.0A EP2365527B1 (en) 2010-02-19 2011-02-18 Semiconductor light emitting device having multi-cell attray, light emitting module, and illumination apparatus
CN201110048129.6A CN102169933B (zh) 2010-02-19 2011-02-21 具有多单元阵列的半导体发光器件、发光模块和照明设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100015422A KR101601624B1 (ko) 2010-02-19 2010-02-19 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치

Publications (2)

Publication Number Publication Date
KR20110095772A KR20110095772A (ko) 2011-08-25
KR101601624B1 true KR101601624B1 (ko) 2016-03-09

Family

ID=44261711

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100015422A Active KR101601624B1 (ko) 2010-02-19 2010-02-19 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치

Country Status (6)

Country Link
US (1) US8829540B2 (enExample)
EP (1) EP2365527B1 (enExample)
JP (1) JP5683994B2 (enExample)
KR (1) KR101601624B1 (enExample)
CN (1) CN102169933B (enExample)
TW (1) TWI437702B (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101211733B1 (ko) * 2010-10-28 2012-12-12 엘지이노텍 주식회사 광소자 패키지용 기판
US8193015B2 (en) * 2010-11-17 2012-06-05 Pinecone Energies, Inc. Method of forming a light-emitting-diode array with polymer between light emitting devices
US9653643B2 (en) 2012-04-09 2017-05-16 Cree, Inc. Wafer level packaging of light emitting diodes (LEDs)
CN103765496B (zh) 2011-09-06 2016-10-19 皇家飞利浦有限公司 在大面积矩阵中分布和连接led的拓扑结构
KR20130035658A (ko) * 2011-09-30 2013-04-09 서울옵토디바이스주식회사 발광 다이오드 소자용 기판 제조 방법
KR101895359B1 (ko) 2011-10-14 2018-09-07 엘지이노텍 주식회사 씨오비 패키지를 이용한 조명 모듈 구현 방법 및 그 조명 모듈
CN102324460A (zh) * 2011-10-24 2012-01-18 佛山市国星光电股份有限公司 基于图形化封装基板的led封装装置
TW201318147A (zh) * 2011-10-26 2013-05-01 華夏光股份有限公司 發光二極體陣列
CN102403331A (zh) * 2011-10-26 2012-04-04 华夏光股份有限公司 发光二极管阵列
CN102497691B (zh) * 2011-11-25 2013-12-25 俞国宏 一种可直接与交流电连接的led灯泡
KR101412011B1 (ko) * 2011-12-06 2014-06-27 엘이디라이텍(주) 발광소자 어레이 및 이를 포함하는 조명장치
TWI438895B (zh) * 2012-02-09 2014-05-21 隆達電子股份有限公司 發光二極體陣列
JP5992695B2 (ja) 2012-02-29 2016-09-14 スタンレー電気株式会社 半導体発光素子アレイ及び車両用灯具
KR20130109319A (ko) 2012-03-27 2013-10-08 삼성전자주식회사 반도체 발광장치, 발광모듈 및 조명장치
TW201347223A (zh) * 2012-05-08 2013-11-16 Chi Mei Lighting Tech Corp 高壓發光二極體及其製造方法
KR20140006485A (ko) 2012-07-05 2014-01-16 삼성전자주식회사 멀티셀 어레이를 갖는 반도체 발광장치 및 그 제조 방법
CN103633232B (zh) * 2012-08-22 2016-09-07 华夏光股份有限公司 半导体发光装置
CN104813489B (zh) * 2012-11-23 2018-01-02 首尔伟傲世有限公司 发光二极管及其制造方法
US9356212B2 (en) * 2012-12-21 2016-05-31 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
DE112013006123T5 (de) 2012-12-21 2015-09-10 Seoul Viosys Co., Ltd. Leuchtdiode und Verfahren zu deren Herstellung
KR102087935B1 (ko) * 2012-12-27 2020-03-11 엘지이노텍 주식회사 발광 소자
JP6176032B2 (ja) * 2013-01-30 2017-08-09 日亜化学工業株式会社 半導体発光素子
US20160155901A1 (en) * 2013-07-18 2016-06-02 Koninklijke Philips N.V. Highly reflective flip chip led die
US9673254B2 (en) 2013-07-22 2017-06-06 Lg Innotek Co., Ltd. Light emitting device
KR102194805B1 (ko) * 2013-07-22 2020-12-28 엘지이노텍 주식회사 발광소자
KR102099436B1 (ko) * 2013-10-01 2020-04-09 엘지이노텍 주식회사 발광 소자
US9780276B2 (en) * 2014-01-23 2017-10-03 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences Wafer-level semiconductor device and manufacturing method thereof
CN113437054B (zh) * 2014-06-18 2025-01-28 艾克斯展示公司技术有限公司 微组装led显示器
KR20160031938A (ko) * 2014-09-15 2016-03-23 서울바이오시스 주식회사 발광 다이오드
CN105865668B (zh) * 2015-01-20 2019-12-10 北京纳米能源与系统研究所 压力传感成像阵列、设备及其制作方法
CN104752586A (zh) * 2015-03-27 2015-07-01 华南理工大学 一种led图形优化封装基板、led封装体及其制备方法
EP3353822B1 (en) * 2015-10-16 2023-06-07 Seoul Viosys Co. Ltd. Compact light emitting diode chip
TWI565095B (zh) * 2015-11-09 2017-01-01 錼創科技股份有限公司 發光模組
JP6354799B2 (ja) * 2015-12-25 2018-07-11 日亜化学工業株式会社 発光素子
US9929316B2 (en) 2015-12-25 2018-03-27 Nichia Corporation Light emitting element
US10373938B2 (en) 2016-01-05 2019-08-06 Lg Innotek Co., Ltd. Light emitting element
KR102263041B1 (ko) 2016-02-26 2021-06-09 삼성전자주식회사 멀티 컬러를 구현할 수 있는 발광 소자
US10153256B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-transfer printable electronic component
KR102480220B1 (ko) 2016-04-08 2022-12-26 삼성전자주식회사 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널
KR101852436B1 (ko) * 2016-06-22 2018-04-26 엘지전자 주식회사 반도체 발광 소자를 이용한 차량용 램프
KR102565147B1 (ko) * 2017-11-08 2023-08-18 서울바이오시스 주식회사 복수의 픽셀들을 포함하는 디스플레이용 발광 다이오드 유닛 및 그것을 갖는 디스플레이 장치
DE112018006755B4 (de) 2018-01-03 2025-11-27 Lg Electronics Inc. Eine Fahrzeuglampe, die eine lichtemittierende Halbleitervorrichtung verwendet
JP6822429B2 (ja) 2018-02-19 2021-01-27 日亜化学工業株式会社 発光素子
CN208014703U (zh) * 2018-03-29 2018-10-26 昆山工研院新型平板显示技术中心有限公司 驱动背板、微发光二极管显示面板及显示器
KR102556280B1 (ko) * 2018-07-05 2023-07-17 엘지전자 주식회사 반도체 발광 소자를 이용한 램프
US11282984B2 (en) 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
US11482650B2 (en) * 2018-11-07 2022-10-25 Seoul Viosys Co., Ltd. Light emitting device including light shielding layer
JP7348520B2 (ja) * 2018-12-25 2023-09-21 日亜化学工業株式会社 発光装置及び表示装置
KR102659254B1 (ko) * 2018-12-26 2024-04-22 엘지전자 주식회사 반도체 발광소자를 이용한 램프
US20200302858A1 (en) * 2019-03-21 2020-09-24 Xinchen Technology Co., Ltd. Conductive substrate of a display device
TWI801648B (zh) * 2019-03-21 2023-05-11 范文昌 顯示裝置的導電基板
TWI830759B (zh) * 2019-07-31 2024-02-01 晶元光電股份有限公司 發光二極體元件及其製造方法
TWI886736B (zh) * 2019-07-31 2025-06-11 晶元光電股份有限公司 發光二極體元件及其製造方法
CN214336198U (zh) * 2020-11-30 2021-10-01 范文正 一种发光显示装置
CN113437203A (zh) * 2021-06-28 2021-09-24 上海天马微电子有限公司 一种显示面板及显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010028062A1 (en) * 2000-03-31 2001-10-11 Toshiya Uemura Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
WO2007018390A1 (en) * 2005-08-10 2007-02-15 Seoul Opto-Device Co., Ltd. Light emitting device and method of manufacturing the same
US20100038655A1 (en) * 2008-08-18 2010-02-18 Ding-Yuan Chen Reflective Layer for Light-Emitting Diodes

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US746286A (en) * 1903-09-19 1903-12-08 Union Mfg Co Plane-iron.
JPS5012299Y1 (enExample) * 1970-12-30 1975-04-16
JPS5012299A (enExample) 1973-06-04 1975-02-07
JPS63142685A (ja) 1986-12-04 1988-06-15 Yokogawa Electric Corp Ｌｅｄアレ−
JPH02296322A (ja) 1989-05-11 1990-12-06 Nec Corp 半導体素子の電極形成方法
JPH05267718A (ja) 1992-03-19 1993-10-15 Mitsubishi Electric Corp 半導体発光素子の評価装置及び評価方法
US6410942B1 (en) 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US6547249B2 (en) 2001-03-29 2003-04-15 Lumileds Lighting U.S., Llc Monolithic series/parallel led arrays formed on highly resistive substrates
JP4309106B2 (ja) 2002-08-21 2009-08-05 士郎 酒井 ＩｎＧａＮ系化合物半導体発光装置の製造方法
ES2362407T3 (es) * 2002-08-29 2011-07-04 Seoul Semiconductor Co., Ltd. Dispositivo emisor de luz provisto de diodos emisores de luz.
EP1667241B1 (en) 2003-08-19 2016-12-07 Nichia Corporation Semiconductor light emitting diode and method of manufacturing the same
EP1658642B1 (en) * 2003-08-28 2014-02-26 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7285801B2 (en) 2004-04-02 2007-10-23 Lumination, Llc LED with series-connected monolithically integrated mesas
JP2005327979A (ja) * 2004-05-17 2005-11-24 Toshiba Corp 半導体発光素子および半導体発光装置
KR100624448B1 (ko) 2004-12-02 2006-09-18 삼성전기주식회사 반도체 발광소자 및 그 제조방법
KR100638666B1 (ko) 2005-01-03 2006-10-30 삼성전기주식회사 질화물 반도체 발광소자
US7474681B2 (en) 2005-05-13 2009-01-06 Industrial Technology Research Institute Alternating current light-emitting device
JP5012299B2 (ja) 2007-08-07 2012-08-29 トヨタ自動車株式会社 ガス拡散層の製造方法、膜電極接合体の製造方法、燃料電池の製造方法、および、ガス拡散層
TWI343133B (en) 2007-08-15 2011-06-01 Huga Optotech Inc Semiconductor light-emitting device with high light-extraction efficiency and method of fabricating the same
KR100928259B1 (ko) 2007-10-15 2009-11-24 엘지전자 주식회사 발광 장치 및 그 제조방법
KR101448153B1 (ko) 2008-06-25 2014-10-08 삼성전자주식회사 발광 다이오드용 멀티칩 패키지 및 멀티칩 패키지 방식의발광 다이오드 소자

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010028062A1 (en) * 2000-03-31 2001-10-11 Toshiya Uemura Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
WO2007018390A1 (en) * 2005-08-10 2007-02-15 Seoul Opto-Device Co., Ltd. Light emitting device and method of manufacturing the same
US20100038655A1 (en) * 2008-08-18 2010-02-18 Ding-Yuan Chen Reflective Layer for Light-Emitting Diodes

Also Published As

Publication number Publication date
US20110204387A1 (en) 2011-08-25
CN102169933A (zh) 2011-08-31
JP5683994B2 (ja) 2015-03-11
TWI437702B (zh) 2014-05-11
EP2365527B1 (en) 2016-11-02
JP2011171739A (ja) 2011-09-01
CN102169933B (zh) 2014-12-03
EP2365527A2 (en) 2011-09-14
US8829540B2 (en) 2014-09-09
EP2365527A3 (en) 2014-01-29
TW201212219A (en) 2012-03-16
KR20110095772A (ko) 2011-08-25

Similar Documents

Publication Publication Date Title
KR101601624B1 (ko) 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치
US10069048B2 (en) Wafer-level light emitting diode package and method of fabricating the same
JP7001728B2 (ja) 光電素子
US9373746B2 (en) Manufacturing method of semiconductor light emitting device having sloped wiring unit
US9318530B2 (en) Wafer level light-emitting diode array and method for manufacturing same
TWI418063B (zh) 發光二極體封裝結構及其製造方法
CN103426989B (zh) 半导体发光器件及其制造方法、发光模块和照明设备
US20110210352A1 (en) Semiconductor light emitting device having multi-cell array, light emitting module, and illumination apparatus
CN204375793U (zh) Led发光装置
WO2010146783A1 (ja) 半導体発光装置、発光モジュール、および照明装置
JP5850036B2 (ja) 発光装置
CN105789235A (zh) 晶片级发光二极管封装件及其制造方法
TWI623116B (zh) 發光元件
KR101761854B1 (ko) 발광 다이오드 모듈
CN115588725A (zh) 一种高压倒装发光二极管和发光装置
TWI599017B (zh) 晶圓等級之發光二極體陣列及其製造方法
KR102100286B1 (ko) 발광다이오드 구조
CN223246990U (zh) Led发光阵列结构及发光模组
CN101800275B (zh) 侧视型发光二极管封装结构及其制造方法与应用
KR20220003280A (ko) 반도체 발광소자
CN101866894B (zh) 电极结构及其发光元件
CN120604650A (zh) 发光装置及使用该发光装置的照明装置
KR20150136201A (ko) 웨이퍼 레벨의 발광 다이오드 어레이

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20100219

PG1501 Laying open of application
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20120628

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20150204

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20100219

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20151021

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20160222

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20160303

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20160304

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20190228

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20190228

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20200228

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20200228

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20210225

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20230222

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20240227

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20250225

Start annual number: 10

End annual number: 10