CN102157362B - 使用硅化的金属栅极电极以及其形成方法 - Google Patents

使用硅化的金属栅极电极以及其形成方法 Download PDF

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Publication number
CN102157362B
CN102157362B CN2011100472901A CN201110047290A CN102157362B CN 102157362 B CN102157362 B CN 102157362B CN 2011100472901 A CN2011100472901 A CN 2011100472901A CN 201110047290 A CN201110047290 A CN 201110047290A CN 102157362 B CN102157362 B CN 102157362B
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China
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gate
polysilicon
layer
polysilicon body
dopant
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Chinese (zh)
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CN102157362A (zh
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W·P·毛萨尔拉
Z·克里沃卡皮奇
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2011100472901A 2002-04-30 2003-04-28 使用硅化的金属栅极电极以及其形成方法 Expired - Lifetime CN102157362B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/135,227 US6599831B1 (en) 2002-04-30 2002-04-30 Metal gate electrode using silicidation and method of formation thereof
US10/135,227 2002-04-30

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNA038097842A Division CN1729576A (zh) 2002-04-30 2003-04-28 使用硅化的金属栅极电极以及其形成方法

Publications (2)

Publication Number Publication Date
CN102157362A CN102157362A (zh) 2011-08-17
CN102157362B true CN102157362B (zh) 2012-05-16

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CN2011100472901A Expired - Lifetime CN102157362B (zh) 2002-04-30 2003-04-28 使用硅化的金属栅极电极以及其形成方法
CNA038097842A Pending CN1729576A (zh) 2002-04-30 2003-04-28 使用硅化的金属栅极电极以及其形成方法

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US (2) US6599831B1 (enExample)
EP (1) EP1502305A1 (enExample)
JP (1) JP2005524243A (enExample)
KR (1) KR20040102187A (enExample)
CN (2) CN102157362B (enExample)
AU (1) AU2003231119A1 (enExample)
TW (1) TWI270935B (enExample)
WO (1) WO2003094243A1 (enExample)

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JP4521597B2 (ja) * 2004-02-10 2010-08-11 ルネサスエレクトロニクス株式会社 半導体記憶装置およびその製造方法
US7056782B2 (en) * 2004-02-25 2006-06-06 International Business Machines Corporation CMOS silicide metal gate integration
JP3998665B2 (ja) * 2004-06-16 2007-10-31 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP2006013270A (ja) * 2004-06-29 2006-01-12 Renesas Technology Corp 半導体装置およびその製造方法
KR100558011B1 (ko) * 2004-07-12 2006-03-06 삼성전자주식회사 전체실리사이드 금속게이트전극을 갖는 모스 트랜지스터의제조방법
JP2006108355A (ja) * 2004-10-05 2006-04-20 Renesas Technology Corp 半導体装置およびその製造方法
KR100593452B1 (ko) * 2005-02-01 2006-06-28 삼성전자주식회사 전체실리사이드 금속게이트전극을 갖는 모스 트랜지스터의제조방법
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JP2007027727A (ja) * 2005-07-11 2007-02-01 Interuniv Micro Electronica Centrum Vzw フルシリサイド化ゲートｍｏｓｆｅｔの形成方法及び該方法により得られるデバイス
KR100646937B1 (ko) 2005-08-22 2006-11-23 삼성에스디아이 주식회사 다결정 실리콘 박막트랜지스터 및 그 제조방법
JP2007173347A (ja) * 2005-12-20 2007-07-05 Renesas Technology Corp 半導体装置及びその製造方法
JPWO2007077814A1 (ja) * 2006-01-06 2009-06-11 日本電気株式会社 半導体装置及びその製造方法
JP2007251030A (ja) * 2006-03-17 2007-09-27 Renesas Technology Corp 半導体装置の製造方法および半導体装置
US7491643B2 (en) * 2006-05-24 2009-02-17 International Business Machines Corporation Method and structure for reducing contact resistance between silicide contact and overlying metallization
US7297618B1 (en) 2006-07-28 2007-11-20 International Business Machines Corporation Fully silicided gate electrodes and method of making the same
JPWO2008035490A1 (ja) * 2006-09-20 2010-01-28 日本電気株式会社 半導体装置およびその製造方法
WO2008065908A1 (fr) * 2006-11-29 2008-06-05 Phyzchemix Corporation Procédé de formation d'un film de composé d'élément métallique du groupe iv et procédé de fabrication d'un dispositif semi-conducteur
US7727842B2 (en) * 2007-04-27 2010-06-01 Texas Instruments Incorporated Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device
US8183137B2 (en) * 2007-05-23 2012-05-22 Texas Instruments Incorporated Use of dopants to provide low defect gate full silicidation
JP2009026997A (ja) * 2007-07-20 2009-02-05 Renesas Technology Corp 半導体装置およびその製造方法
US7642153B2 (en) * 2007-10-23 2010-01-05 Texas Instruments Incorporated Methods for forming gate electrodes for integrated circuits
CN101981688B (zh) * 2008-04-02 2014-04-02 Imec公司 制造半导体器件的方法以及半导体器件
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Also Published As

Publication number Publication date
TWI270935B (en) 2007-01-11
US6599831B1 (en) 2003-07-29
KR20040102187A (ko) 2004-12-03
CN102157362A (zh) 2011-08-17
US20030203609A1 (en) 2003-10-30
US6873030B2 (en) 2005-03-29
AU2003231119A1 (en) 2003-11-17
EP1502305A1 (en) 2005-02-02
JP2005524243A (ja) 2005-08-11
CN1729576A (zh) 2006-02-01
TW200403729A (en) 2004-03-01
WO2003094243A1 (en) 2003-11-13

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