CN102132355B - 校正过度编程非易失性存储器 - Google Patents

校正过度编程非易失性存储器 Download PDF

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Publication number
CN102132355B
CN102132355B CN200980133256.7A CN200980133256A CN102132355B CN 102132355 B CN102132355 B CN 102132355B CN 200980133256 A CN200980133256 A CN 200980133256A CN 102132355 B CN102132355 B CN 102132355B
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CN
China
Prior art keywords
nand strings
memory cell
storage elements
voltage
volatile storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980133256.7A
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English (en)
Chinese (zh)
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CN102132355A (zh
Inventor
杰弗里·W·卢茨
李艳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Technologies LLC
Original Assignee
SanDisk Corp
SanDisk Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by SanDisk Corp, SanDisk Technologies LLC filed Critical SanDisk Corp
Publication of CN102132355A publication Critical patent/CN102132355A/zh
Application granted granted Critical
Publication of CN102132355B publication Critical patent/CN102132355B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3413—Circuits or methods to recover overprogrammed nonvolatile memory cells detected during program verification, usually by means of a "soft" erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3463—Circuits or methods to detect overprogrammed nonvolatile memory cells, usually during program verification

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
CN200980133256.7A 2008-07-02 2009-06-30 校正过度编程非易失性存储器 Expired - Fee Related CN102132355B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/167,128 US7852683B2 (en) 2008-07-02 2008-07-02 Correcting for over programming non-volatile storage
US12/167,128 2008-07-02
PCT/US2009/049238 WO2010002879A1 (en) 2008-07-02 2009-06-30 Correcting for over programming non-volatile storage

Publications (2)

Publication Number Publication Date
CN102132355A CN102132355A (zh) 2011-07-20
CN102132355B true CN102132355B (zh) 2015-03-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980133256.7A Expired - Fee Related CN102132355B (zh) 2008-07-02 2009-06-30 校正过度编程非易失性存储器

Country Status (7)

Country Link
US (3) US7852683B2 (enExample)
EP (1) EP2304736B1 (enExample)
JP (1) JP5481477B2 (enExample)
KR (1) KR101576991B1 (enExample)
CN (1) CN102132355B (enExample)
TW (1) TW201015560A (enExample)
WO (1) WO2010002879A1 (enExample)

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US7965554B2 (en) * 2008-07-02 2011-06-21 Sandisk Corporation Selective erase operation for non-volatile storage
US8422305B2 (en) * 2009-06-29 2013-04-16 Hynix Semiconductor Inc. Method of programming nonvolatile memory device
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KR102110844B1 (ko) 2014-06-02 2020-05-14 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법
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KR102333743B1 (ko) 2015-01-21 2021-12-01 삼성전자주식회사 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 동작 방법
CN105989895B (zh) * 2015-02-03 2019-03-15 华邦电子股份有限公司 快闪存储器晶圆测试方法以及机台
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KR102274280B1 (ko) * 2015-06-22 2021-07-07 삼성전자주식회사 불휘발성 메모리 장치의 동작 방법
US9910730B2 (en) 2015-10-21 2018-03-06 Sandisk Technologies Llc System for handling erratic word lines for non-volatile memory
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US10026488B2 (en) 2016-08-18 2018-07-17 Sandisk Technologies Llc Non-volatile memory with read disturb detection for open blocks
KR102683413B1 (ko) 2017-02-02 2024-07-10 삼성전자주식회사 비휘발성 메모리 장치, 비휘발성 메모리 장치의 소프트 이레이즈 방법 및 프로그램 방법
US10249382B2 (en) 2017-08-22 2019-04-02 Sandisk Technologies Llc Determination of fast to program word lines in non-volatile memory
KR20190028997A (ko) 2017-09-11 2019-03-20 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
KR20190037659A (ko) * 2017-09-29 2019-04-08 에스케이하이닉스 주식회사 불휘발성 메모리 장치, 불휘발성 메모리 장치의 동작 방법 및 불휘발성 메모리 장치를 포함하는 데이터 저장 장치
US10748630B2 (en) * 2017-11-29 2020-08-18 Silicon Storage Technology, Inc. High precision and highly efficient tuning mechanisms and algorithms for analog neuromorphic memory in artificial neural networks
US10910061B2 (en) * 2018-03-14 2021-02-02 Silicon Storage Technology, Inc. Method and apparatus for programming analog neural memory in a deep learning artificial neural network
KR102643672B1 (ko) * 2018-12-19 2024-03-06 에스케이하이닉스 주식회사 반도체 장치 및 그 동작 방법
US10839928B1 (en) 2019-05-16 2020-11-17 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US11081198B2 (en) 2019-05-16 2021-08-03 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US11755899B2 (en) * 2019-11-11 2023-09-12 Silicon Storage Technology, Inc. Precise programming method and apparatus for analog neural memory in an artificial neural network
JP7180015B2 (ja) * 2019-11-13 2022-11-29 長江存儲科技有限責任公司 プログラミング動作を実行する方法および関連するメモリデバイス
KR102657140B1 (ko) * 2019-12-26 2024-04-15 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
JP2021149997A (ja) 2020-03-23 2021-09-27 キオクシア株式会社 メモリシステム
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Also Published As

Publication number Publication date
EP2304736A1 (en) 2011-04-06
CN102132355A (zh) 2011-07-20
JP5481477B2 (ja) 2014-04-23
US7978530B2 (en) 2011-07-12
JP2011527069A (ja) 2011-10-20
KR20110042300A (ko) 2011-04-26
KR101576991B1 (ko) 2015-12-11
US20110007569A1 (en) 2011-01-13
US20110228609A1 (en) 2011-09-22
US8077524B2 (en) 2011-12-13
WO2010002879A1 (en) 2010-01-07
US20100002514A1 (en) 2010-01-07
EP2304736B1 (en) 2013-08-21
TW201015560A (en) 2010-04-16
US7852683B2 (en) 2010-12-14

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