TW201015560A - Correcting for over programming non-volatile storage - Google Patents
Correcting for over programming non-volatile storage Download PDFInfo
- Publication number
- TW201015560A TW201015560A TW098122457A TW98122457A TW201015560A TW 201015560 A TW201015560 A TW 201015560A TW 098122457 A TW098122457 A TW 098122457A TW 98122457 A TW98122457 A TW 98122457A TW 201015560 A TW201015560 A TW 201015560A
- Authority
- TW
- Taiwan
- Prior art keywords
- volatile storage
- voltage
- applying
- subset
- programmed
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 104
- 238000012795 verification Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims 1
- 239000003039 volatile agent Substances 0.000 claims 1
- 230000015654 memory Effects 0.000 abstract description 373
- 238000009826 distribution Methods 0.000 description 55
- 238000007667 floating Methods 0.000 description 36
- 238000010586 diagram Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 18
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 238000007726 management method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
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- 241000579895 Chlorostilbon Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000013500 data storage Methods 0.000 description 1
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- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
- G11C11/5635—Erasing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
- G11C16/3413—Circuits or methods to recover overprogrammed nonvolatile memory cells detected during program verification, usually by means of a "soft" erasing step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3463—Circuits or methods to detect overprogrammed nonvolatile memory cells, usually during program verification
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/167,128 US7852683B2 (en) | 2008-07-02 | 2008-07-02 | Correcting for over programming non-volatile storage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201015560A true TW201015560A (en) | 2010-04-16 |
Family
ID=40941150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098122457A TW201015560A (en) | 2008-07-02 | 2009-07-02 | Correcting for over programming non-volatile storage |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US7852683B2 (enExample) |
| EP (1) | EP2304736B1 (enExample) |
| JP (1) | JP5481477B2 (enExample) |
| KR (1) | KR101576991B1 (enExample) |
| CN (1) | CN102132355B (enExample) |
| TW (1) | TW201015560A (enExample) |
| WO (1) | WO2010002879A1 (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8014209B2 (en) | 2008-07-02 | 2011-09-06 | Sandisk Technologies Inc. | Programming and selectively erasing non-volatile storage |
| US7852683B2 (en) * | 2008-07-02 | 2010-12-14 | Sandisk Corporation | Correcting for over programming non-volatile storage |
| US7965554B2 (en) * | 2008-07-02 | 2011-06-21 | Sandisk Corporation | Selective erase operation for non-volatile storage |
| US8422305B2 (en) * | 2009-06-29 | 2013-04-16 | Hynix Semiconductor Inc. | Method of programming nonvolatile memory device |
| US8289773B2 (en) * | 2010-11-09 | 2012-10-16 | Freescale Semiconductor, Inc. | Non-volatile memory (NVM) erase operation with brownout recovery technique |
| JP2012133833A (ja) * | 2010-12-20 | 2012-07-12 | Samsung Yokohama Research Institute Co Ltd | 不揮発性半導体記憶装置 |
| US8503242B2 (en) * | 2011-04-14 | 2013-08-06 | Micron Technology, Inc. | Methods and devices for determining sensing voltages |
| KR101193059B1 (ko) * | 2011-04-21 | 2012-10-22 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 동작 방법 |
| KR20120119779A (ko) * | 2011-04-22 | 2012-10-31 | 삼성전자주식회사 | 불휘발성 메모리 장치 |
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| US8842476B2 (en) * | 2011-11-09 | 2014-09-23 | Sandisk Technologies Inc. | Erratic program detection for non-volatile storage |
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| DE102014215798A1 (de) * | 2014-08-08 | 2016-02-11 | Robert Bosch Gmbh | Bremsverfahren für ein Kraftfahrzeug und Steuervorrichtung für ein Bremsverfahren |
| KR102333743B1 (ko) | 2015-01-21 | 2021-12-01 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 동작 방법 |
| CN105989895B (zh) * | 2015-02-03 | 2019-03-15 | 华邦电子股份有限公司 | 快闪存储器晶圆测试方法以及机台 |
| US9548130B2 (en) | 2015-04-08 | 2017-01-17 | Sandisk Technologies Llc | Non-volatile memory with prior state sensing |
| KR102274280B1 (ko) * | 2015-06-22 | 2021-07-07 | 삼성전자주식회사 | 불휘발성 메모리 장치의 동작 방법 |
| US9910730B2 (en) | 2015-10-21 | 2018-03-06 | Sandisk Technologies Llc | System for handling erratic word lines for non-volatile memory |
| US11017838B2 (en) | 2016-08-04 | 2021-05-25 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices |
| US10026488B2 (en) | 2016-08-18 | 2018-07-17 | Sandisk Technologies Llc | Non-volatile memory with read disturb detection for open blocks |
| KR102683413B1 (ko) | 2017-02-02 | 2024-07-10 | 삼성전자주식회사 | 비휘발성 메모리 장치, 비휘발성 메모리 장치의 소프트 이레이즈 방법 및 프로그램 방법 |
| US10249382B2 (en) | 2017-08-22 | 2019-04-02 | Sandisk Technologies Llc | Determination of fast to program word lines in non-volatile memory |
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| KR20190037659A (ko) * | 2017-09-29 | 2019-04-08 | 에스케이하이닉스 주식회사 | 불휘발성 메모리 장치, 불휘발성 메모리 장치의 동작 방법 및 불휘발성 메모리 장치를 포함하는 데이터 저장 장치 |
| US10748630B2 (en) * | 2017-11-29 | 2020-08-18 | Silicon Storage Technology, Inc. | High precision and highly efficient tuning mechanisms and algorithms for analog neuromorphic memory in artificial neural networks |
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| KR102643672B1 (ko) * | 2018-12-19 | 2024-03-06 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 동작 방법 |
| US10839928B1 (en) | 2019-05-16 | 2020-11-17 | Sandisk Technologies Llc | Non-volatile memory with countermeasure for over programming |
| US11081198B2 (en) | 2019-05-16 | 2021-08-03 | Sandisk Technologies Llc | Non-volatile memory with countermeasure for over programming |
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| KR102657140B1 (ko) * | 2019-12-26 | 2024-04-15 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 이의 동작 방법 |
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| US11335411B1 (en) | 2021-03-03 | 2022-05-17 | Sandisk Technologies Llc | Erase operation for memory device with staircase word line voltage during erase pulse |
| US20240296891A1 (en) * | 2023-03-03 | 2024-09-05 | Western Digital Technologies, Inc. | Post-program erase in 3d nand |
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| US7852683B2 (en) * | 2008-07-02 | 2010-12-14 | Sandisk Corporation | Correcting for over programming non-volatile storage |
| US8014209B2 (en) | 2008-07-02 | 2011-09-06 | Sandisk Technologies Inc. | Programming and selectively erasing non-volatile storage |
-
2008
- 2008-07-02 US US12/167,128 patent/US7852683B2/en active Active
-
2009
- 2009-06-30 KR KR1020117002770A patent/KR101576991B1/ko not_active Expired - Fee Related
- 2009-06-30 CN CN200980133256.7A patent/CN102132355B/zh not_active Expired - Fee Related
- 2009-06-30 JP JP2011516811A patent/JP5481477B2/ja active Active
- 2009-06-30 EP EP09774330.6A patent/EP2304736B1/en not_active Not-in-force
- 2009-06-30 WO PCT/US2009/049238 patent/WO2010002879A1/en not_active Ceased
- 2009-07-02 TW TW098122457A patent/TW201015560A/zh unknown
-
2010
- 2010-09-08 US US12/877,383 patent/US7978530B2/en active Active
-
2011
- 2011-06-02 US US13/152,252 patent/US8077524B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP2304736A1 (en) | 2011-04-06 |
| CN102132355A (zh) | 2011-07-20 |
| CN102132355B (zh) | 2015-03-18 |
| JP5481477B2 (ja) | 2014-04-23 |
| US7978530B2 (en) | 2011-07-12 |
| JP2011527069A (ja) | 2011-10-20 |
| KR20110042300A (ko) | 2011-04-26 |
| KR101576991B1 (ko) | 2015-12-11 |
| US20110007569A1 (en) | 2011-01-13 |
| US20110228609A1 (en) | 2011-09-22 |
| US8077524B2 (en) | 2011-12-13 |
| WO2010002879A1 (en) | 2010-01-07 |
| US20100002514A1 (en) | 2010-01-07 |
| EP2304736B1 (en) | 2013-08-21 |
| US7852683B2 (en) | 2010-12-14 |
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