JP5481477B2 - 不揮発性記憶装置のオーバープログラムの訂正 - Google Patents

不揮発性記憶装置のオーバープログラムの訂正 Download PDF

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JP5481477B2
JP5481477B2 JP2011516811A JP2011516811A JP5481477B2 JP 5481477 B2 JP5481477 B2 JP 5481477B2 JP 2011516811 A JP2011516811 A JP 2011516811A JP 2011516811 A JP2011516811 A JP 2011516811A JP 5481477 B2 JP5481477 B2 JP 5481477B2
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applying
voltage
nand strings
storage elements
volatile storage
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JP2011527069A (ja
JP2011527069A5 (enExample
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ジェフリー ダブリュー． ルッツェ
ヤン リ
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SanDisk Technologies LLC
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SanDisk Technologies LLC
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3413—Circuits or methods to recover overprogrammed nonvolatile memory cells detected during program verification, usually by means of a "soft" erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3463—Circuits or methods to detect overprogrammed nonvolatile memory cells, usually during program verification

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
JP2011516811A 2008-07-02 2009-06-30 不揮発性記憶装置のオーバープログラムの訂正 Active JP5481477B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/167,128 2008-07-02
US12/167,128 US7852683B2 (en) 2008-07-02 2008-07-02 Correcting for over programming non-volatile storage
PCT/US2009/049238 WO2010002879A1 (en) 2008-07-02 2009-06-30 Correcting for over programming non-volatile storage

Publications (3)

Publication Number Publication Date
JP2011527069A JP2011527069A (ja) 2011-10-20
JP2011527069A5 JP2011527069A5 (enExample) 2012-05-31
JP5481477B2 true JP5481477B2 (ja) 2014-04-23

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JP2011516811A Active JP5481477B2 (ja) 2008-07-02 2009-06-30 不揮発性記憶装置のオーバープログラムの訂正

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US (3) US7852683B2 (enExample)
EP (1) EP2304736B1 (enExample)
JP (1) JP5481477B2 (enExample)
KR (1) KR101576991B1 (enExample)
CN (1) CN102132355B (enExample)
TW (1) TW201015560A (enExample)
WO (1) WO2010002879A1 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8014209B2 (en) 2008-07-02 2011-09-06 Sandisk Technologies Inc. Programming and selectively erasing non-volatile storage
US7852683B2 (en) * 2008-07-02 2010-12-14 Sandisk Corporation Correcting for over programming non-volatile storage
US7965554B2 (en) * 2008-07-02 2011-06-21 Sandisk Corporation Selective erase operation for non-volatile storage
US8422305B2 (en) * 2009-06-29 2013-04-16 Hynix Semiconductor Inc. Method of programming nonvolatile memory device
US8289773B2 (en) * 2010-11-09 2012-10-16 Freescale Semiconductor, Inc. Non-volatile memory (NVM) erase operation with brownout recovery technique
JP2012133833A (ja) * 2010-12-20 2012-07-12 Samsung Yokohama Research Institute Co Ltd 不揮発性半導体記憶装置
US8503242B2 (en) * 2011-04-14 2013-08-06 Micron Technology, Inc. Methods and devices for determining sensing voltages
KR101193059B1 (ko) * 2011-04-21 2012-10-22 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 동작 방법
KR20120119779A (ko) * 2011-04-22 2012-10-31 삼성전자주식회사 불휘발성 메모리 장치
US8842476B2 (en) * 2011-11-09 2014-09-23 Sandisk Technologies Inc. Erratic program detection for non-volatile storage
US8630118B2 (en) 2011-11-09 2014-01-14 Sandisk Technologies Inc. Defective word line detection
KR102090589B1 (ko) 2013-01-14 2020-03-18 삼성전자주식회사 비휘발성 메모리 장치의 데이터 저장 방법 및 비휘발성 메모리 장치의 테스트 방법
US9053810B2 (en) * 2013-03-08 2015-06-09 Sandisk Technologies Inc. Defect or program disturb detection with full data recovery capability
US8929141B1 (en) * 2013-10-02 2015-01-06 Sandisk Technologies Inc. Three-dimensional NAND memory with adaptive erase
KR20150130849A (ko) * 2014-05-14 2015-11-24 에스케이하이닉스 주식회사 반도체 장치의 동작 방법
KR102110844B1 (ko) 2014-06-02 2020-05-14 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법
DE102014215798A1 (de) * 2014-08-08 2016-02-11 Robert Bosch Gmbh Bremsverfahren für ein Kraftfahrzeug und Steuervorrichtung für ein Bremsverfahren
KR102333743B1 (ko) 2015-01-21 2021-12-01 삼성전자주식회사 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 동작 방법
CN105989895B (zh) * 2015-02-03 2019-03-15 华邦电子股份有限公司 快闪存储器晶圆测试方法以及机台
US9548130B2 (en) 2015-04-08 2017-01-17 Sandisk Technologies Llc Non-volatile memory with prior state sensing
KR102274280B1 (ko) * 2015-06-22 2021-07-07 삼성전자주식회사 불휘발성 메모리 장치의 동작 방법
US9910730B2 (en) 2015-10-21 2018-03-06 Sandisk Technologies Llc System for handling erratic word lines for non-volatile memory
US11017838B2 (en) 2016-08-04 2021-05-25 Samsung Electronics Co., Ltd. Nonvolatile memory devices
US10026488B2 (en) 2016-08-18 2018-07-17 Sandisk Technologies Llc Non-volatile memory with read disturb detection for open blocks
KR102683413B1 (ko) 2017-02-02 2024-07-10 삼성전자주식회사 비휘발성 메모리 장치, 비휘발성 메모리 장치의 소프트 이레이즈 방법 및 프로그램 방법
US10249382B2 (en) 2017-08-22 2019-04-02 Sandisk Technologies Llc Determination of fast to program word lines in non-volatile memory
KR20190028997A (ko) 2017-09-11 2019-03-20 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
KR20190037659A (ko) * 2017-09-29 2019-04-08 에스케이하이닉스 주식회사 불휘발성 메모리 장치, 불휘발성 메모리 장치의 동작 방법 및 불휘발성 메모리 장치를 포함하는 데이터 저장 장치
US10748630B2 (en) * 2017-11-29 2020-08-18 Silicon Storage Technology, Inc. High precision and highly efficient tuning mechanisms and algorithms for analog neuromorphic memory in artificial neural networks
US10910061B2 (en) 2018-03-14 2021-02-02 Silicon Storage Technology, Inc. Method and apparatus for programming analog neural memory in a deep learning artificial neural network
KR102643672B1 (ko) * 2018-12-19 2024-03-06 에스케이하이닉스 주식회사 반도체 장치 및 그 동작 방법
US11081198B2 (en) 2019-05-16 2021-08-03 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US10839928B1 (en) 2019-05-16 2020-11-17 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US11755899B2 (en) * 2019-11-11 2023-09-12 Silicon Storage Technology, Inc. Precise programming method and apparatus for analog neural memory in an artificial neural network
JP7180015B2 (ja) * 2019-11-13 2022-11-29 長江存儲科技有限責任公司 プログラミング動作を実行する方法および関連するメモリデバイス
KR102657140B1 (ko) * 2019-12-26 2024-04-15 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
JP2021149997A (ja) 2020-03-23 2021-09-27 キオクシア株式会社 メモリシステム
KR20240136462A (ko) 2020-04-28 2024-09-13 양쯔 메모리 테크놀로지스 씨오., 엘티디. 메모리 디바이스와 그 소거 및 검증 방법
JP6887044B1 (ja) * 2020-05-22 2021-06-16 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置および読出し方法
US11335411B1 (en) 2021-03-03 2022-05-17 Sandisk Technologies Llc Erase operation for memory device with staircase word line voltage during erase pulse
US20240296891A1 (en) * 2023-03-03 2024-09-05 Western Digital Technologies, Inc. Post-program erase in 3d nand

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
JPH07320487A (ja) * 1994-05-20 1995-12-08 Sony Corp 半導体不揮発性記憶装置
KR0169412B1 (ko) * 1995-10-16 1999-02-01 김광호 불휘발성 반도체 메모리 장치
KR100272037B1 (ko) 1997-02-27 2000-12-01 니시무로 타이죠 불휘발성 반도체 기억 장치
JPH11176177A (ja) * 1997-12-12 1999-07-02 Toshiba Corp 不揮発性半導体記憶装置
US6212103B1 (en) * 1999-07-28 2001-04-03 Xilinx, Inc. Method for operating flash memory
JP3863330B2 (ja) 1999-09-28 2006-12-27 株式会社東芝 不揮発性半導体メモリ
KR100357693B1 (ko) * 1999-12-06 2002-10-25 삼성전자 주식회사 향상된 소거 알고리즘이 내장된 불휘발성 반도체 메모리장치
JP3730508B2 (ja) 2000-11-13 2006-01-05 株式会社東芝 半導体記憶装置およびその動作方法
KR100676722B1 (ko) * 2000-12-21 2007-02-01 후지쯔 가부시끼가이샤 비휘발성 반도체 기억 장치 및 데이터 소거 방법
US6370061B1 (en) * 2001-06-19 2002-04-09 Advanced Micro Devices, Inc. Ceiling test mode to characterize the threshold voltage distribution of over programmed memory cells
US6907497B2 (en) * 2001-12-20 2005-06-14 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
JP2003257187A (ja) 2002-02-28 2003-09-12 Hitachi Ltd 不揮発性メモリ、ｉｃカード及びデータ処理装置
US7203874B2 (en) * 2003-05-08 2007-04-10 Micron Technology, Inc. Error detection, documentation, and correction in a flash memory device
JP4220319B2 (ja) * 2003-07-04 2009-02-04 株式会社東芝 不揮発性半導体記憶装置およびそのサブブロック消去方法
JP2005038504A (ja) 2003-07-14 2005-02-10 Sony Corp データ消去方法及び同方法を用いたデータ消去回路を有するメモリ装置
US7088623B2 (en) 2003-10-16 2006-08-08 United Microelectronics Corp. Non-volatile memory technology suitable for flash and byte operation application
KR100648254B1 (ko) 2004-12-01 2006-11-24 삼성전자주식회사 소거시간을 줄일 수 있는 불휘발성 메모리 장치 및 그것의소거방법
JP2006190820A (ja) * 2005-01-06 2006-07-20 Sony Corp 不揮発性メモリデバイスの電荷注入方法
US7400537B2 (en) 2005-03-31 2008-07-15 Sandisk Corporation Systems for erasing non-volatile memory using individual verification and additional erasing of subsets of memory cells
US7391654B2 (en) 2005-05-11 2008-06-24 Micron Technology, Inc. Memory block erasing in a flash memory device
KR100749736B1 (ko) * 2005-06-13 2007-08-16 삼성전자주식회사 플래시 메모리 장치 및 그것의 소거 방법
KR100672172B1 (ko) * 2005-06-30 2007-01-19 주식회사 하이닉스반도체 프로그램 속도를 향상시키는 ｉｓｐｐ 방식을 이용한플래시 메모리 장치의 프로그램 방법
US20070047327A1 (en) 2005-08-31 2007-03-01 Micron Technology, Inc. Erase method for flash memory
US7355889B2 (en) 2005-12-19 2008-04-08 Sandisk Corporation Method for programming non-volatile memory with reduced program disturb using modified pass voltages
US7561469B2 (en) 2006-03-28 2009-07-14 Micron Technology, Inc. Programming method to reduce word line to word line breakdown for NAND flash
US7551492B2 (en) 2006-03-29 2009-06-23 Mosaid Technologies, Inc. Non-volatile semiconductor memory with page erase
JP2008135100A (ja) * 2006-11-28 2008-06-12 Toshiba Corp 半導体記憶装置及びそのデータ消去方法
JP2008140488A (ja) * 2006-12-04 2008-06-19 Toshiba Corp 半導体記憶装置
US7548458B2 (en) * 2007-04-27 2009-06-16 Macronix International Co., Ltd. Methods of biasing a multi-level-cell memory
US7492636B2 (en) 2007-04-27 2009-02-17 Macronix International Co., Ltd. Methods for conducting double-side-biasing operations of NAND memory arrays
US7719902B2 (en) * 2008-05-23 2010-05-18 Sandisk Corporation Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage
US7965554B2 (en) 2008-07-02 2011-06-21 Sandisk Corporation Selective erase operation for non-volatile storage
US7852683B2 (en) * 2008-07-02 2010-12-14 Sandisk Corporation Correcting for over programming non-volatile storage
US8014209B2 (en) 2008-07-02 2011-09-06 Sandisk Technologies Inc. Programming and selectively erasing non-volatile storage

Also Published As

Publication number Publication date
KR101576991B1 (ko) 2015-12-11
KR20110042300A (ko) 2011-04-26
US8077524B2 (en) 2011-12-13
US7852683B2 (en) 2010-12-14
US20110228609A1 (en) 2011-09-22
US20100002514A1 (en) 2010-01-07
WO2010002879A1 (en) 2010-01-07
US20110007569A1 (en) 2011-01-13
TW201015560A (en) 2010-04-16
US7978530B2 (en) 2011-07-12
CN102132355A (zh) 2011-07-20
CN102132355B (zh) 2015-03-18
EP2304736B1 (en) 2013-08-21
JP2011527069A (ja) 2011-10-20
EP2304736A1 (en) 2011-04-06

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