KR101576991B1 - 비휘발성 저장 소자의 오버 프로그래밍 정정 - Google Patents

비휘발성 저장 소자의 오버 프로그래밍 정정 Download PDF

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Publication number
KR101576991B1
KR101576991B1 KR1020117002770A KR20117002770A KR101576991B1 KR 101576991 B1 KR101576991 B1 KR 101576991B1 KR 1020117002770 A KR1020117002770 A KR 1020117002770A KR 20117002770 A KR20117002770 A KR 20117002770A KR 101576991 B1 KR101576991 B1 KR 101576991B1
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South Korea
Prior art keywords
volatile storage
nand strings
storage elements
memory cells
boosting
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Expired - Fee Related
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KR1020117002770A
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Korean (ko)
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KR20110042300A (ko
Inventor
제프리 더블유. 루츠
얀 리
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샌디스크 테크놀로지스, 인코포레이티드
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Publication of KR20110042300A publication Critical patent/KR20110042300A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3413—Circuits or methods to recover overprogrammed nonvolatile memory cells detected during program verification, usually by means of a "soft" erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3463—Circuits or methods to detect overprogrammed nonvolatile memory cells, usually during program verification

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
KR1020117002770A 2008-07-02 2009-06-30 비휘발성 저장 소자의 오버 프로그래밍 정정 Expired - Fee Related KR101576991B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/167,128 2008-07-02
US12/167,128 US7852683B2 (en) 2008-07-02 2008-07-02 Correcting for over programming non-volatile storage

Publications (2)

Publication Number Publication Date
KR20110042300A KR20110042300A (ko) 2011-04-26
KR101576991B1 true KR101576991B1 (ko) 2015-12-11

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Country Status (7)

Country Link
US (3) US7852683B2 (enExample)
EP (1) EP2304736B1 (enExample)
JP (1) JP5481477B2 (enExample)
KR (1) KR101576991B1 (enExample)
CN (1) CN102132355B (enExample)
TW (1) TW201015560A (enExample)
WO (1) WO2010002879A1 (enExample)

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US10304548B2 (en) 2017-09-11 2019-05-28 SK Hynix Inc. Semiconductor memory device and method of operating the same

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US7965554B2 (en) * 2008-07-02 2011-06-21 Sandisk Corporation Selective erase operation for non-volatile storage
US8422305B2 (en) * 2009-06-29 2013-04-16 Hynix Semiconductor Inc. Method of programming nonvolatile memory device
US8289773B2 (en) * 2010-11-09 2012-10-16 Freescale Semiconductor, Inc. Non-volatile memory (NVM) erase operation with brownout recovery technique
JP2012133833A (ja) * 2010-12-20 2012-07-12 Samsung Yokohama Research Institute Co Ltd 不揮発性半導体記憶装置
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KR101193059B1 (ko) * 2011-04-21 2012-10-22 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 동작 방법
KR20120119779A (ko) * 2011-04-22 2012-10-31 삼성전자주식회사 불휘발성 메모리 장치
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KR102090589B1 (ko) 2013-01-14 2020-03-18 삼성전자주식회사 비휘발성 메모리 장치의 데이터 저장 방법 및 비휘발성 메모리 장치의 테스트 방법
US9053810B2 (en) * 2013-03-08 2015-06-09 Sandisk Technologies Inc. Defect or program disturb detection with full data recovery capability
US8929141B1 (en) * 2013-10-02 2015-01-06 Sandisk Technologies Inc. Three-dimensional NAND memory with adaptive erase
KR20150130849A (ko) * 2014-05-14 2015-11-24 에스케이하이닉스 주식회사 반도체 장치의 동작 방법
KR102110844B1 (ko) 2014-06-02 2020-05-14 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법
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KR102333743B1 (ko) 2015-01-21 2021-12-01 삼성전자주식회사 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 동작 방법
CN105989895B (zh) * 2015-02-03 2019-03-15 华邦电子股份有限公司 快闪存储器晶圆测试方法以及机台
US9548130B2 (en) 2015-04-08 2017-01-17 Sandisk Technologies Llc Non-volatile memory with prior state sensing
KR102274280B1 (ko) * 2015-06-22 2021-07-07 삼성전자주식회사 불휘발성 메모리 장치의 동작 방법
US9910730B2 (en) 2015-10-21 2018-03-06 Sandisk Technologies Llc System for handling erratic word lines for non-volatile memory
US11017838B2 (en) 2016-08-04 2021-05-25 Samsung Electronics Co., Ltd. Nonvolatile memory devices
US10026488B2 (en) 2016-08-18 2018-07-17 Sandisk Technologies Llc Non-volatile memory with read disturb detection for open blocks
KR102683413B1 (ko) 2017-02-02 2024-07-10 삼성전자주식회사 비휘발성 메모리 장치, 비휘발성 메모리 장치의 소프트 이레이즈 방법 및 프로그램 방법
US10249382B2 (en) 2017-08-22 2019-04-02 Sandisk Technologies Llc Determination of fast to program word lines in non-volatile memory
KR20190037659A (ko) * 2017-09-29 2019-04-08 에스케이하이닉스 주식회사 불휘발성 메모리 장치, 불휘발성 메모리 장치의 동작 방법 및 불휘발성 메모리 장치를 포함하는 데이터 저장 장치
US10748630B2 (en) * 2017-11-29 2020-08-18 Silicon Storage Technology, Inc. High precision and highly efficient tuning mechanisms and algorithms for analog neuromorphic memory in artificial neural networks
US10910061B2 (en) 2018-03-14 2021-02-02 Silicon Storage Technology, Inc. Method and apparatus for programming analog neural memory in a deep learning artificial neural network
KR102643672B1 (ko) * 2018-12-19 2024-03-06 에스케이하이닉스 주식회사 반도체 장치 및 그 동작 방법
US11081198B2 (en) 2019-05-16 2021-08-03 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US10839928B1 (en) 2019-05-16 2020-11-17 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US11755899B2 (en) * 2019-11-11 2023-09-12 Silicon Storage Technology, Inc. Precise programming method and apparatus for analog neural memory in an artificial neural network
JP7180015B2 (ja) * 2019-11-13 2022-11-29 長江存儲科技有限責任公司 プログラミング動作を実行する方法および関連するメモリデバイス
KR102657140B1 (ko) * 2019-12-26 2024-04-15 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
JP2021149997A (ja) 2020-03-23 2021-09-27 キオクシア株式会社 メモリシステム
KR20240136462A (ko) 2020-04-28 2024-09-13 양쯔 메모리 테크놀로지스 씨오., 엘티디. 메모리 디바이스와 그 소거 및 검증 방법
JP6887044B1 (ja) * 2020-05-22 2021-06-16 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置および読出し方法
US11335411B1 (en) 2021-03-03 2022-05-17 Sandisk Technologies Llc Erase operation for memory device with staircase word line voltage during erase pulse
US20240296891A1 (en) * 2023-03-03 2024-09-05 Western Digital Technologies, Inc. Post-program erase in 3d nand

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US10304548B2 (en) 2017-09-11 2019-05-28 SK Hynix Inc. Semiconductor memory device and method of operating the same
US10580503B2 (en) 2017-09-11 2020-03-03 SK Hynix Inc. Semiconductor memory device and method of operating the same

Also Published As

Publication number Publication date
KR20110042300A (ko) 2011-04-26
US8077524B2 (en) 2011-12-13
US7852683B2 (en) 2010-12-14
US20110228609A1 (en) 2011-09-22
US20100002514A1 (en) 2010-01-07
WO2010002879A1 (en) 2010-01-07
US20110007569A1 (en) 2011-01-13
TW201015560A (en) 2010-04-16
US7978530B2 (en) 2011-07-12
CN102132355A (zh) 2011-07-20
CN102132355B (zh) 2015-03-18
EP2304736B1 (en) 2013-08-21
JP5481477B2 (ja) 2014-04-23
JP2011527069A (ja) 2011-10-20
EP2304736A1 (en) 2011-04-06

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Not in force date: 20181208

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000