CN101958298A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN101958298A
CN101958298A CN2010102060615A CN201010206061A CN101958298A CN 101958298 A CN101958298 A CN 101958298A CN 2010102060615 A CN2010102060615 A CN 2010102060615A CN 201010206061 A CN201010206061 A CN 201010206061A CN 101958298 A CN101958298 A CN 101958298A
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China
Prior art keywords
connection
solder
semiconductor chip
semiconductor
electrodes
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CN2010102060615A
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English (en)
Chinese (zh)
Inventor
秦英惠
中村真人
木下顺弘
绀野顺平
依田智子
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of CN101958298A publication Critical patent/CN101958298A/zh
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
CN2010102060615A 2009-07-16 2010-06-13 半导体器件及其制造方法 Pending CN101958298A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009167716A JP5465942B2 (ja) 2009-07-16 2009-07-16 半導体装置およびその製造方法
JP2009-167716 2009-07-16

Related Child Applications (1)

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CN201410264924.2A Division CN104022092A (zh) 2009-07-16 2010-06-13 半导体器件的制造方法

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CN101958298A true CN101958298A (zh) 2011-01-26

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CN2010102060615A Pending CN101958298A (zh) 2009-07-16 2010-06-13 半导体器件及其制造方法

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Country Link
US (1) US8633103B2 (enExample)
JP (1) JP5465942B2 (enExample)
CN (2) CN104022092A (enExample)
TW (1) TWI414049B (enExample)

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CN104282582A (zh) * 2014-09-17 2015-01-14 中南大学 一种Ni-P基板的封装方法
CN105103287A (zh) * 2013-03-26 2015-11-25 欧司朗光电半导体有限公司 借助于等温凝固反应来连接接合配对件以形成In-Bi-Ag连接层的方法和接合配对件的相应装置
CN108172559A (zh) * 2016-12-08 2018-06-15 松下知识产权经营株式会社 安装结构体

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JP5546067B2 (ja) * 2010-10-22 2014-07-09 パナソニック株式会社 半導体接合構造体および半導体接合構造体の製造方法
US9324905B2 (en) 2011-03-15 2016-04-26 Micron Technology, Inc. Solid state optoelectronic device with preformed metal support substrate
JP5613100B2 (ja) * 2011-04-21 2014-10-22 パナソニック株式会社 半導体装置の製造方法
WO2013038594A1 (ja) 2011-09-16 2013-03-21 パナソニック株式会社 実装構造およびその製造方法
US8497579B1 (en) * 2012-02-16 2013-07-30 Chipbond Technology Corporation Semiconductor packaging method and structure thereof
CN102637747A (zh) * 2012-04-05 2012-08-15 祁门县硅鼎电子元件厂 镀涂环保材料的双铜质电极整流管芯片及镀涂工艺
JP2015122445A (ja) * 2013-12-24 2015-07-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
TWI892323B (zh) 2016-10-27 2025-08-01 美商艾德亞半導體科技有限責任公司 用於低溫接合的結構和方法
JP7783896B2 (ja) 2020-12-30 2025-12-10 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 導電特徴部を備えた構造体及びその形成方法
KR20230058949A (ko) * 2021-10-25 2023-05-03 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
CN116313834B (zh) * 2023-05-24 2023-09-12 江西兆驰半导体有限公司 晶圆级封装方法及晶圆级封装结构

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